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    Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same
    1.
    发明申请
    Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same 审中-公开
    形成材料膜的方法，形成电容器的方法以及使用其形成半导体存储器件的方法

    公开(公告)号：US20060068507A1

    公开(公告)日：2006-03-30

    申请号：US11233363

    申请日：2005-09-23

    申请人： Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Jang-Yeon Kwon ,  Huaxiang Yin

    发明人： Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Jang-Yeon Kwon ,  Huaxiang Yin

    IPC分类号： H01L21/00 ,  H01L21/8242

    CPC分类号： H01L21/02356 ,  H01L21/02197 ,  H01L21/31691 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

    摘要： A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550°C.

    摘要翻译： 提供了形成材料（例如铁电体）膜的方法，制造电容器的方法，以及使用形成（例如铁电体）膜的方法形成半导体存储器件的方法。 根据本发明的示例性实施例，形成铁电体膜的方法包括制备基板，在基板上沉积非晶铁电体膜，并通过用激光束照射非晶强电介质膜使其结晶。 根据本发明的另一示例性实施例，形成铁电体膜的方法可以减少对其它元件的热损伤，因为铁电体膜可以在低于约500℃至约550℃的温度下形成。

    Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same
    3.
    发明申请
    Methods of forming a material film, methods of forming a capacitor, and methods of forming a semiconductor memory device using the same 审中-公开
    形成材料膜的方法，形成电容器的方法以及使用其形成半导体存储器件的方法

    公开(公告)号：US20080261333A1

    公开(公告)日：2008-10-23

    申请号：US12213424

    申请日：2008-06-19

    申请人： Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Jang-Yeon Kwon ,  Huaxiang Yin

    发明人： Wenxu Xianyu ,  Takashi Noguchi ,  Hans S. Cho ,  Jang-Yeon Kwon ,  Huaxiang Yin

    IPC分类号： H01L21/28

    CPC分类号： H01L21/02356 ,  H01L21/02197 ,  H01L21/31691 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

    摘要： A method of forming a material (e.g., ferroelectric) film, a method of manufacturing a capacitor, and a method of forming a semiconductor memory device using the method of forming the (e.g., ferroelectric) film are provided. Pursuant to an example embodiment of the present invention, a method of forming a ferroelectric film includes preparing a substrate, depositing an amorphous ferroelectric film on the substrate, and crystallizing the amorphous ferroelectric film by irradiating it with a laser beam. According to still another example embodiment of the present invention, a method of forming a ferroelectric film may reduce the thermal damage to other elements because the ferroelectric film may be formed at a temperature lower than about 500° C. to about 550° C.

    摘要翻译： 提供了形成材料（例如铁电体）膜的方法，制造电容器的方法，以及使用形成（例如铁电体）膜的方法形成半导体存储器件的方法。 根据本发明的示例性实施例，形成铁电体膜的方法包括制备基板，在基板上沉积非晶铁电体膜，并通过用激光束照射非晶强电介质膜使其结晶。 根据本发明的另一示例性实施例，形成铁电体膜的方法可以减少对其它元件的热损伤，因为铁电体膜可以形成在低于约500℃至约550℃的温度。

    Thin film transistor with capping layer and method of manufacturing the same
    4.
    发明申请
    Thin film transistor with capping layer and method of manufacturing the same 审中-公开
    具有封盖层的薄膜晶体管及其制造方法

    公开(公告)号：US20060220034A1

    公开(公告)日：2006-10-05

    申请号：US11369947

    申请日：2006-03-08

    申请人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-young Kim ,  Ji-sim Jung ,  Jang-yeon Kwon

    发明人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-young Kim ,  Ji-sim Jung ,  Jang-yeon Kwon

    IPC分类号： H01L33/00

    CPC分类号： H01L29/66757 ,  H01L29/4908

    摘要： A thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor may include a substrate, a buffer layer, a polysilicon layer, a gate insulating layer and/or a gate electrode, and a capping layer. The buffer layer may be formed on the substrate. The polysilicon layer may be formed on the buffer layer, and may include a first doped region, a second doped region, and a channel region. The gate insulating layer and a gate electrode may be sequentially stacked on the channel region of the polysilicon layer. The capping layer may be stacked on the gate electrode.

    摘要翻译： 一种薄膜晶体管及其制造方法。 薄膜晶体管可以包括衬底，缓冲层，多晶硅层，栅极绝缘层和/或栅电极以及覆盖层。 缓冲层可以形成在衬底上。 多晶硅层可以形成在缓冲层上，并且可以包括第一掺杂区域，第二掺杂区域和沟道区域。 栅极绝缘层和栅电极可以顺序堆叠在多晶硅层的沟道区上。 覆盖层可以堆叠在栅电极上。

    Semiconductor devices including transistors and methods of fabricating the same
    9.
    发明申请
    Semiconductor devices including transistors and methods of fabricating the same 有权
    包括晶体管的半导体器件及其制造方法

    公开(公告)号：US20070111605A1

    公开(公告)日：2007-05-17

    申请号：US11600741

    申请日：2006-11-17

    申请人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Huaxiang Yin

    发明人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Huaxiang Yin

    IPC分类号： H01R24/00

    CPC分类号： H01L21/823412 ,  H01L21/823456 ,  H01L21/823807 ,  H01L21/82385

    摘要： A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.

    摘要翻译： 半导体器件包括晶体管。 晶体管包括具有倾斜表面的基板，从倾斜表面的下部延伸的第一上表面和从倾斜表面的上端延伸的第二上表面。 栅极堆叠结构形成在倾斜表面上并且包括栅电极。 形成在第一和第二上表面中的一个上的第一杂质区域接触栅极堆叠结构。 形成在第二上表面上的第二杂质区域接触栅堆叠结构。 第一和第二杂质区之间的通道在结晶方向上沿着倾斜表面形成。

    Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same
    10.
    发明申请
    Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same 有权

    公开(公告)号：US20060267017A1

    公开(公告)日：2006-11-30

    申请号：US11397866

    申请日：2006-04-05

    申请人： Takashi Noguchi ,  Hans Cho ,  Wenxu Xianyu ,  Huaxiang Yin ,  Xiaoxin Zhang

    发明人： Takashi Noguchi ,  Hans Cho ,  Wenxu Xianyu ,  Huaxiang Yin ,  Xiaoxin Zhang

    IPC分类号： H01L29/76

    CPC分类号： H01L29/78687 ,  H01L29/66742 ,  H01L29/78603

    摘要： Semiconductor-on-insulator (SOI) structures, semiconductor devices using the same and methods of manufacturing the same, and more particularly, to a structure with a single-crystalline (for example, germanium (x-Ge)) layer on an insulating layer, semiconductor devices using the same, and methods of manufacturing the same. The SOI structure may include a single-crystalline substrate formed of a first semiconductor material, a first insulating layer formed on the substrate and having at least one window exposing a portion of the substrate, a first epitaxial growth region formed on a surface of the substrate exposed by the window and formed of at least one of the first semiconductor material and a second semiconductor material, and a first single-crystalline layer formed on the first insulating layer and the first epitaxial growth region and formed of the second semiconductor material, and crystallized using a surface of the first epitaxial growth region as a seed layer for crystallization.