摘要:
The present invention relates to aluminium oxide pastes and to a process for the use of the aluminium oxide pastes for the formation of Al2O3 coatings or mixed Al2O3 hybrid layers.
摘要翻译:本发明涉及氧化铝浆料以及使用氧化铝浆料形成Al 2 O 3涂层或混合的Al 2 O 3混合层的方法。
摘要:
The present invention relates to aluminium oxide pastes and to a process for the use of the aluminium oxide pastes for the formation of Al2O3 coatings or mixed Al2O3 hybrid layers.
摘要翻译:本发明涉及氧化铝浆料以及使用氧化铝浆料形成Al 2 O 3涂层或混合的Al 2 O 3混合层的方法。
摘要:
The present invention relates to the use of printable inks for the formation of Al2O3 coatings or mixed Al2O3 hybrid layers, and to a corresponding process for the formation thereof.
摘要翻译:本发明涉及可印刷油墨用于形成Al 2 O 3涂层或混合Al 2 O 3混合层的用途,以及用于其形成的相应方法。
摘要:
The present invention relates to compositions which are particularly suitable for the etching and structuring of transparent, conductive antireflection coatings and of corresponding stacked layers, which are preferably present in touch-sensitive display screens or display elements. The latter are generally also known as touch-sensitive displays, touch panels or touch screens. In particular, these are compositions by means of which fine structures can be etched selectively into conductive transparent oxidic layers and into corresponding layer stacks.
摘要:
The present invention relates to a process for the production of solar cells comprising a selective emitter using an improved etching-paste composition which has significantly improved selectivity for silicon layers.
摘要:
The present invention relates to aluminium oxide-based passivation layers which simultaneously act as diffusion barrier for underlying wafer layers against aluminium and other metals. Furthermore, a process and suitable compositions for the production of these layers are described.
摘要:
The present invention relates to a process for the production of solar cells comprising a selective emitter using an improved etching-paste composition which has significantly improved selectivity for silicon layers
摘要:
The present invention relates to compositions, which are useful for the generation of patterned or structured SiO2-layers or of SiO2-lines during the manufacturing process of semiconductor devices, and which are suitable for the application in inkjet operations. The present invention also relates to a modified process of manufacturing semiconductor devices taking advantage of these new compositions.
摘要:
The present invention refers to a method for selectively structuring of a polymer matrix comprising CNT (carbon nano tubes) on a flexible plastic substructure. The method also includes a suitable etching composition, which allows to proceed the method in a mass production.
摘要:
The present invention relates to a method for selectively etching and patterning with high resolution of flexible polymer matrices, which may comprise Ag nano tubes.