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95 条记录 (耗时 0.043 秒)

    Retina implant assembly and methods for manufacturing the same
    2.
    发明授权
    Retina implant assembly and methods for manufacturing the same 有权
    视网膜植入组件及其制造方法

    公开(公告)号：US06847847B2

    公开(公告)日：2005-01-25

    申请号：US10011641

    申请日：2001-11-07

    申请人： Wilfried Nisch ,  Alfred Stett ,  Markus Schubert ,  Michael Graf ,  Heinz Gerhard Graf ,  Hugo Hämmerle ,  Eberhart Zrenner ,  Martin Stelzle ,  Helmut Sachs

    发明人： Wilfried Nisch ,  Alfred Stett ,  Markus Schubert ,  Michael Graf ,  Heinz Gerhard Graf ,  Hugo Hämmerle ,  Eberhart Zrenner ,  Martin Stelzle ,  Helmut Sachs

    IPC分类号： A61F2/14 ,  A61F9/08 ,  A61N1/36

    CPC分类号： A61N1/0543 ,  A61F2/14 ,  A61F9/08 ,  A61N1/3787

    摘要： A retina implant including a chip adapted to be implanted into the interior of eye in subretinal contact with the retina. The chip has a plurality of pixel elements on a side thereof facing the lens for receiving an image projected into the retina and a plurality of electrodes for stimulating retina cells. The implants further includes a receiver coil for inductively coupling thereinto electromagnetic energy. The receiver coil coupled to a means for converting an alternating voltage induced into the receiver coil in a direct voltage suited for supplying the chip. The receiver coil is configured as a component separate from the chip, and for being positioned on the eye ball outside the sclera. The chip is connected to the receiver coil via a connecting lead which, in the implanted condition interconnects the interior and the exterior of the eye ball.

    摘要翻译： 一种视网膜植入物，包括适于植入眼睛内部的芯片，视网膜视网膜与视网膜接触。 该芯片在面向透镜的一侧具有多个像素元件，用于接收投影到视网膜中的图像，以及多个用于刺激视网膜细胞的电极。 植入物还包括用于感应地耦合到其中的电磁能的接收器线圈。 接收器线圈耦合到用于将感应到接收器线圈的交流电压以适于供应芯片的直流电压的装置。 接收器线圈被配置为与芯片分离的部件，并且用于定位在巩膜外的眼球上。 芯片通过连接引线连接到接收器线圈，该连接引线在植入条件下将眼球的内部和外部互连。

    Method and system for growing a thin film using a gas cluster ion beam
    5.
    发明授权
    Method and system for growing a thin film using a gas cluster ion beam 有权
    使用气体簇离子束生长薄膜的方法和系统

    公开(公告)号：US09103031B2

    公开(公告)日：2015-08-11

    申请号：US12144968

    申请日：2008-06-24

    申请人： John J. Hautala ,  Michael Graf ,  Yan Shao ,  Brian S. Freer

    发明人： John J. Hautala ,  Michael Graf ,  Yan Shao ,  Brian S. Freer

    IPC分类号： C23C14/00 ,  C23C14/48 ,  H01J27/02 ,  C23C14/10 ,  C23C14/22 ,  H01J27/00

    CPC分类号： C23C14/48 ,  C23C14/10 ,  C23C14/221 ,  H01J27/026 ,  H01J2237/0812

    摘要： A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.

    摘要翻译： 描述了在基板上形成薄膜的方法。 该方法包括在减压环境中提供衬底，以及在减压环境中从加压气体混合物产生气体簇离子束（GCIB）。 设置光束加速电位和光束剂量以实现高达约300埃的薄膜厚度，并且实现薄膜上表面的表面粗糙度小于约20埃。 GCIB根据光束加速电位被加速，并且根据光束剂量将加速的GCIB照射到基底的至少一部分上。 通过这样做，薄膜在衬底的至少一部分上生长以获得厚度和表面粗糙度。

    Multiple nozzle gas cluster ion beam system
    6.
    发明授权
    Multiple nozzle gas cluster ion beam system 有权
    多喷嘴气体簇离子束系统

    公开(公告)号：US08981322B2

    公开(公告)日：2015-03-17

    申请号：US12428945

    申请日：2009-04-23

    申请人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

    发明人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

    IPC分类号： G21K5/04 ,  H01J37/08 ,  H01J37/317

    CPC分类号： H01J37/08 ,  H01J37/317 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0825 ,  H01J2237/0827

    摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.

    摘要翻译： 公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层 底物。 多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组 的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。

    Ion source with adjustable aperture
    8.
    发明授权
    Ion source with adjustable aperture 有权
    离子源可调光圈

    公开(公告)号：US08089052B2

    公开(公告)日：2012-01-03

    申请号：US12423066

    申请日：2009-04-14

    申请人： Daniel Tieger ,  William DiVergilio ,  Edward Eisner ,  Michael Graf

    发明人： Daniel Tieger ,  William DiVergilio ,  Edward Eisner ,  Michael Graf

    IPC分类号： H01J49/10 ,  H01J37/317

    CPC分类号： H01J37/08 ,  H01J27/024 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/061 ,  H01J2237/0835

    摘要： An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.

    摘要翻译： 一种离子注入机系统，包括用于产生离子流或离子束的离子源。 离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。 具有所需特性的离子提取孔覆盖室的电离区域。 在一个实施例中，可动离子提取孔板相对于壳体移动以改变离子束轮廓。 一个实施例包括具有至少细长孔的孔板，并在限定不同离子束轮廓的至少第一和第二位置之间移动。 耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。 一个替代实施例具有两个限定可调节孔的移动板部分。

    Method And Manufacturing Low Leakage Mosfets And FinFets
    9.
    发明申请
    Method And Manufacturing Low Leakage Mosfets And FinFets 有权
    方法和制造低漏磁和FinFets

    公开(公告)号：US20110260250A1

    公开(公告)日：2011-10-27

    申请号：US13174398

    申请日：2011-06-30

    申请人： Gayle W. Miller ,  Volker Dudek ,  Michael Graf

    发明人： Gayle W. Miller ,  Volker Dudek ,  Michael Graf

    IPC分类号： H01L29/78

    CPC分类号： H01L27/1203 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/045 ,  H01L29/66795 ,  H01L29/785

    摘要： By aligning the primary flat of a wafer with a (100) plane rather than a (110) plane, devices can be formed with primary currents flowing along the (100) plane. In this case, the device will intersect the (111) plane at approximately 54.7 degrees. This intersect angle significantly reduces stress propagation/relief along the (111) direction and consequently reduces defects as well as leakage and parasitic currents. The leakage current reduction is a direct consequence of the change in the dislocation length required to short the source-drain junction. By using this technique the leakage current is reduced by up to two orders of magnitude for an N-channel CMOS device.

    摘要翻译： 通过将晶片的主平面与（100）平面而不是（110）平面对准，可以沿着（100）平面流动的初级电流形成器件。 在这种情况下，设备将以大约54.7度与（111）平面相交。 这个相交角度可以显着地减少沿（111）方向的应力传播/释放，从而减少缺陷以及泄漏和寄生电流。 泄漏电流降低是短路源极 - 漏极结所需的位错长度变化的直接后果。 通过使用这种技术，对于N沟道CMOS器件，泄漏电流降低高达两个数量级。

    MULTIPLE NOZZLE GAS CLUSTER ION BEAM SYSTEM
    10.
    发明申请
    MULTIPLE NOZZLE GAS CLUSTER ION BEAM SYSTEM 有权
    多喷嘴气体离子束系统

    公开(公告)号：US20100193701A1

    公开(公告)日：2010-08-05

    申请号：US12428945

    申请日：2009-04-23

    申请人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

    发明人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

    IPC分类号： H01J27/00 ,  G21K1/00

    CPC分类号： H01J37/08 ,  H01J37/317 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0825 ,  H01J2237/0827

    摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.

    摘要翻译： 公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层 底物。 多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组 的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。