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1.发明授权Methods and means for maintaining electrical isolation of dissimilar metals when cutting or drilling is required 失效需要在切割或钻孔时维持异种金属的电绝缘的方法和方法
公开(公告)号：US4487794A
公开(公告)日：1984-12-11
申请号：US597026
申请日：1984-04-05
申请人： William D. Brown , Ross E. Veta
发明人： William D. Brown , Ross E. Veta
CPC分类号： E04B1/86 , B32B15/14 , E04B2001/8461 , E04B2001/848 , Y10T156/1057 , Y10T428/24149 , Y10T428/24322 , Y10T428/24331
摘要： In acoustic panels employing a layer of perforate metal adhesively bonded to a layer of porous fibrous metal of a different type with the perforations of the perforated layer and the pores of the porous fibrous layers open to communication therethrough and the layers being isolated therebetween. The isolation between the layers is maintained by applying a coating of liquid epoxy resin material to selected locations, curing the epoxy coating, cutting or drilling the layers as required, and recoating the cut or drilled areas with a second coating of liquid epoxy resin.
摘要翻译： 在使用一层穿孔金属的声学面板中，该层穿孔粘合到不同类型的多孔纤维金属层上，穿孔层的穿孔和多孔纤维层的孔开放通过其连通，并且两层之间被隔离。 通过将液体环氧树脂材料涂层施加到所选择的位置，固化环氧树脂涂层，根据需要切割或钻孔来维持层之间的隔离，并用第二液体环氧树脂涂层重新涂覆切割或钻孔区域。
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2.发明授权Method and means for maintaining electrical isolation of dissimilar metals when cutting or drilling is required 失效需要在切割或钻孔时保持不同金属的电绝缘的方法和装置
公开(公告)号：US4470863A
公开(公告)日：1984-09-11
申请号：US525469
申请日：1983-08-22
申请人： William D. Brown , Ross E. Veta
发明人： William D. Brown , Ross E. Veta
CPC分类号： E04B1/86 , B32B15/14 , E04B2001/8461 , E04B2001/848 , Y10T156/1052 , Y10T156/1056 , Y10T156/1057 , Y10T428/24273
摘要： In acoustic panels employing a layer of perforate metal adhesively bonded to a layer of porous fibrous metal of a different type with the perforations of the perforated layer and the pores of the porous fibrous layer open to communication therethrough and the layers being isolated therebetween. The isolation between the layers is maintained by applying a coating of liquid epoxy resin material to selected locations, curing the epoxy coating, cutting or drilling the layers as required, and recoating the cut or drilled areas with a second coating of liquid epoxy resin.
摘要翻译： 在使用一层穿孔金属的声学面板中，该层穿孔结合到不同类型的多孔纤维金属层上，穿孔层的穿孔和多孔纤维层的孔开放通过，并且两层之间被隔离。 通过将液体环氧树脂材料涂层施加到所选择的位置，固化环氧树脂涂层，根据需要切割或钻孔来维持层之间的隔离，并用第二液体环氧树脂涂层重新涂覆切割或钻孔区域。
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3.发明授权Methods of making and using cubic boron nitride composition, coating and articles made therefrom 有权制造和使用立方氮化硼组合物的方法，由其制成的涂层和制品公开(公告)号：US06607782B1
公开(公告)日：2003-08-19
申请号：US09607021
申请日：2000-06-29
IPC分类号： B05D310
CPC分类号： C04B35/5831 , C04B35/5626 , C04B35/58014 , C04B2235/3839 , C04B2235/3843 , C04B2235/386 , C04B2235/3886 , C04B2235/404 , C04B2235/405 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C23C12/02 , C23C16/045 , C23C30/005 , Y10S427/10
摘要： Methods for coating a substrate and methods of shaping a workpiece comprise formation and use, respectively, of a surface or substrate comprising a first phase selected from nitrides, carbides. carbonitrides, borides, sulphides, chalcogenides, oxides, and silicides, and a second phase selected from nitrides, carbides, carbonitrides, borides, sulphides, chalcogenides, oxides, and silicides, wherein said second phase comprises a multiplicity of discrete portions positioned into the first phase, with these multiplicity of portions comprising a continuous second phase, and made thereof, coating and articles, especially machining, cutting and shaping tools, wearparts, and methods of making and using the composition, coating and articles.
摘要翻译： 涂覆基材的方法和成形工件的方法包括分别形成和使用包括选自氮化物，碳化物的第一相的表面或基材。 碳氮化物，硼化物，硫化物，硫族化物，氧化物和硅化物，以及选自氮化物，碳化物，碳氮化物，硼化物，硫化物，硫族化物，氧化物和硅化物的第二相，其中所述第二相包括多个分立的部分， 这些多个部分包括连续的第二相，并且由其制成，涂层和制品，特别是机械加工，切割和成型工具，耐磨件以及制造和使用组合物，涂层和制品的方法。
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4.发明授权Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells 失效掺杂硅，金属掺杂硅，制造太阳能电池的方法和太阳能电池的方法公开(公告)号：US06339013B1
公开(公告)日：2002-01-15
申请号：US08855229
申请日：1997-05-13
IPC分类号： H01L2136
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L31/0288 , H01L31/1864 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×1020 dopant atoms per cm3 of silicon.
摘要翻译： 用于形成金属掺杂硅层的低温工艺，其中在低温下将硅层沉积到衬底上，然后将金属掺杂层沉积在硅层上。 然后将该结构在低温下退火以形成每cm 3硅具有大于约1×10 20个掺杂剂原子的金属掺杂半导体。
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公开(公告)号：US5264724A
公开(公告)日：1993-11-23
申请号：US529477
申请日：1990-05-29
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/3105 , H01L29/518 , Y10S438/91
摘要： A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.
摘要翻译： 通过等离子体增强技术在硅衬底上沉积氮化硅薄膜层，化学气相沉积技术通过在约600℃至约700℃的温度范围内的沉积后快速热退火并且有时从约3 秒至约30秒。
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6.发明授权Nanoparticle compositions, coatings and articles made therefrom, methods of making and using said compositions, coatings and articles 有权纳米颗粒组合物，由其制成的涂料和制品，制备和使用所述组合物，涂料和制品的方法公开(公告)号：US07510760B2
公开(公告)日：2009-03-31
申请号：US11074597
申请日：2005-03-07
申请人： Ajay P. Malshe , Wenping Jiang , William D. Brown
发明人： Ajay P. Malshe , Wenping Jiang , William D. Brown
IPC分类号： B32B9/00
CPC分类号： C23C16/045 , B22F7/06 , B22F2005/002 , B26B21/60 , C23C16/34 , C23C24/00 , C23C28/00 , C23C30/005 , Y10T428/24942 , Y10T428/30 , Y10T428/31
摘要： Compositions comprising nanoparticles, microparticles, and combinations thereof, the particles may be overcoated particles. Composite coatings and coated articles made therefrom, the coatings comprising mono or multi layers having a textured outer surface morphology, the layers may be continuous and/or discontinuous and may comprise different particle phases. Methods of making and using said compositions, coatings and coated articles.
摘要翻译： 包含纳米颗粒，微粒及其组合的组合物可以是外涂层颗粒。 由其制成的复合涂层和涂覆制品，所述涂层包括单层或多层具有织构化的外表面形态，所述层可以是连续的和/或不连续的并且可以包含不同的颗粒相。 制造和使用所述组合物，涂层和涂覆制品的方法。
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7.发明授权公开(公告)号：US06613653B2
公开(公告)日：2003-09-02
申请号：US10029859
申请日：2001-12-31
IPC分类号： H01L2120
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L31/0288 , H01L31/1864 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1×1020 dopant atoms per cm3 of silicon.
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公开(公告)号：US5873992A
公开(公告)日：1999-02-23
申请号：US824077
申请日：1997-03-24
摘要： Disclosed is an electroplating method and products made therefrom, which in one embodiment includes using a current density J.sub.O, to form a conductive metal layer having a surface roughness no greater than the surface roughness of the underlying member. In another embodiment of electroplating a substrate surface having peaks and valleys, the method includes electroplating a conductive metal onto the peaks to cover the peaks with the conductive metal, and into the valleys to substantially fill the valleys with the conductive metal.
摘要翻译： 公开了一种电镀方法和由其制成的产品，其在一个实施例中包括使用电流密度JO，以形成具有不大于下层构件的表面粗糙度的表面粗糙度的导电金属层。 在电镀具有峰谷的衬底表面的另一个实施例中，该方法包括将导电金属电镀到峰上以用导电金属覆盖峰，并且进入谷以基本上用导电金属填充谷。
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9.发明授权Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices 失效用于稳定PECVD氮化硅的退火工艺用于MOS器件中的栅极电介质
公开(公告)号：US4962065A
公开(公告)日：1990-10-09
申请号：US478028
申请日：1990-02-09
IPC分类号： H01L21/28 , H01L21/3105 , H01L29/51
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/3105 , H01L29/518 , Y10S148/114 , Y10S438/91
摘要： A process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.
摘要翻译： 通过等离子体增强化学气相沉积技术在硅衬底上沉积氮化硅薄膜的方法通过在约600℃至约700℃的温度范围内的后沉积快速热退火而稳定，并且有时范围从 约3秒至约30秒。
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公开(公告)号：US06168744A
公开(公告)日：2001-01-02
申请号：US08946712
申请日：1997-10-08
申请人： Ajay P. Malshe , Arzu M. Ozkan , William D. Brown
发明人： Ajay P. Malshe , Arzu M. Ozkan , William D. Brown
IPC分类号： B29C3508
CPC分类号： B23K26/60 , B23K26/3576 , B23K26/361 , B23K26/364
摘要： A method of processing a substrate by first processing the substrate surface with a laser operating at a first wavelength to both evaporate a portion of the substrate and structurally weaken the substrate surface, and then by processing the substrate surface with a laser operating at a second wavelength to remove the structurally weakened surface.
摘要翻译： 一种处理基板的方法，该方法是用以第一波长工作的激光器首先处理该基板表面，以使基板的一部分蒸发并使结构上弱化该基板表面，然后通过以第二波长工作的激光来处理该基板表面 以去除结构弱化的表面。
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