公开(公告)号：US07033916B1

公开(公告)日：2006-04-25

申请号：US10770990

申请日：2004-02-02

申请人： Mario M. Pelella ,  William George En ,  Eric Paton ,  Witold P. Maszara

发明人： Mario M. Pelella ,  William George En ,  Eric Paton ,  Witold P. Maszara

IPC分类号： H01L21/22 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/44

CPC分类号： H01L29/665 ,  H01L21/26506 ,  H01L21/28518 ,  H01L21/823814 ,  H01L29/6656 ,  H01L29/6659

摘要： A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A super-saturated doped source silicide metallic layer is formed on the semiconductor substrate adjacent the gate and the gate dielectric. The silicide metallic layer incorporates a substantially uniformly distributed dopant therein in a substantially uniform super-saturated concentration. The silicide metallic layer is reacted with the semiconductor substrate therebeneath to form a salicide layer and outdiffuse the dopant from the salicide layer into the semiconductor substrate therebeneath. The outdiffused dopant in the semiconductor substrate is then activated to form a shallow source/drain junction beneath the salicide layer. An interlayer dielectric is then deposited above the semiconductor substrate, and contacts are formed in the interlayer dielectric to the salicide layer.

摘要翻译： 提供一种形成具有半导体衬底的集成电路的方法。 在半导体衬底上形成栅极电介质，在栅极电介质上形成栅极。 在与栅极和栅极电介质相邻的半导体衬底上形成超饱和掺杂源极化硅金属层。 硅化金属层以基本均匀的超饱和浓度掺入其中基本上均匀分布的掺杂剂。 硅化物金属层与其下面的半导体衬底反应以形成自对准硅化物层，并将掺杂剂从硅化物层扩散到其内的半导体衬底中。 然后激活半导体衬底中的向外扩散的掺杂​​剂以在自对准硅化物层下面形成浅的源极/漏极结。 然后在半导体衬底上沉积层间电介质，并且在层间电介质中形成接触到硅化物层。

公开(公告)号：US06812550B1

公开(公告)日：2004-11-02

申请号：US10700733

申请日：2003-11-03

申请人： William George En ,  Eric Paton ,  Mario M. Pelella ,  Witold P. Maszara

发明人： William George En ,  Eric Paton ,  Mario M. Pelella ,  Witold P. Maszara

IPC分类号： H01L2358

CPC分类号： H01L23/585 ,  H01L22/14 ,  H01L23/34 ,  H01L2924/0002 ,  H01L2924/3511 ,  H01L2924/00

摘要： A method for manufacturing an integrated circuit on a semiconductor wafer is provided. The semiconductor wafer has complete die and partial die areas thereon. Functional circuit patterns are formed in a plurality of the complete die areas. The thermal absorption properties of the semiconductor wafer are tuned by forming differing patterns in a plurality of the partial die areas.

摘要翻译： 提供了一种在半导体晶片上制造集成电路的方法。 半导体晶片在其上具有完整的模具和部分模具区域。 功能电路图案形成在多个完整的模具区域中。 通过在多个部分管芯区域中形成不同的图案来调整半导体晶片的热吸收性能。

公开(公告)号：US07298012B2

公开(公告)日：2007-11-20

申请号：US11307537

申请日：2006-02-11

申请人： Mario M. Pelella ,  William George En ,  Eric Paton ,  Witold P. Maszara

发明人： Mario M. Pelella ,  William George En ,  Eric Paton ,  Witold P. Maszara

IPC分类号： H01L29/76

CPC分类号： H01L29/665 ,  H01L21/26506 ,  H01L21/28518 ,  H01L21/823814 ,  H01L29/6656 ,  H01L29/6659

摘要： An integrated circuit with a semiconductor substrate is provided. A gate dielectric is on the semiconductor substrate, and a gate is on the gate dielectric. A silicide layer is on the semiconductor substrate adjacent the gate and the gate dielectric. The silicide layer incorporates a substantially uniformly distributed and concentrated dopant therein. A shallow source/drain junction is beneath the salicide layer. An interlayer dielectric is above the semiconductor substrate, and contacts are in the interlayer dielectric to the salicide layer.

摘要翻译： 提供了具有半导体衬底的集成电路。 栅极电介质位于半导体衬底上，栅极位于栅极电介质上。 硅化物层位于与栅极和栅极电介质相邻的半导体衬底上。 硅化物层在其中包含基本均匀分布和浓缩的掺杂剂。 浅层源极/漏极结在自对准层下面。 层间电介质位于半导体衬底之上，并且触点位于硅化物层的层间电介质中。

公开(公告)号：US07863175B2

公开(公告)日：2011-01-04

申请号：US11614801

申请日：2006-12-21

申请人： Robert Bertram Ogle ,  Joong Jeon ,  Eric Paton ,  Austin Frenkel

发明人： Robert Bertram Ogle ,  Joong Jeon ,  Eric Paton ,  Austin Frenkel

IPC分类号： H01L21/8247 ,  H01L29/788

CPC分类号： H01L21/28273 ,  H01L21/02068 ,  H01L27/11526 ,  H01L27/11531

摘要： A system and method are disclosed for processing a zero angstrom oxide interface dual poly gate structure for a flash memory device. An exemplary method can include removing an oxide on a surface of a first poly layer and forming a second poly layer on the first poly layer in a same processing chamber. A transfer of the structure is not needed from an oxide removal tool to, for example, a poly layer formation tool, an implant tool, and the like. As a result, impurities containing a silicon oxide caused by exposure of the first poly layer to an oxygen-containing atmosphere do not form at the interface of the first and second poly layers.

摘要翻译： 公开了一种用于处理闪存器件的零氧化物界面双重多晶硅结构的系统和方法。 示例性的方法可以包括去除第一多晶硅层的表面上的氧化物并在同一处理室中在第一多晶硅层上形成第二多晶硅层。 不需要从氧化物去除工具到例如多层形成工具，植入工具等的结构的转移。 结果，在第一和第二多层的界面处不形成含有由第一多晶硅层暴露于含氧气氛的氧化硅的杂质。

公开(公告)号：US20060180873A1

公开(公告)日：2006-08-17

申请号：US11307537

申请日：2006-02-11

申请人： Mario Pelella ,  William En ,  Eric Paton ,  Witold Maszara

发明人： Mario Pelella ,  William En ,  Eric Paton ,  Witold Maszara

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/665 ,  H01L21/26506 ,  H01L21/28518 ,  H01L21/823814 ,  H01L29/6656 ,  H01L29/6659

摘要： An integrated circuit with a semiconductor substrate is provided. A gate dielectric is on the semiconductor substrate, and a gate is on the gate dielectric. A suicide layer is on the semiconductor substrate adjacent the gate and the gate dielectric. The silicide layer incorporates a substantially uniformly distributed and concentrated dopant therein. A shallow source/drain junction is beneath the salicide layer. An interlayer dielectric is above the semiconductor substrate, and contacts are in the interlayer dielectric to the salicide layer.

摘要翻译： 提供了具有半导体衬底的集成电路。 栅极电介质位于半导体衬底上，栅极位于栅极电介质上。 硅化物层位于邻近栅极和栅极电介质的半导体衬底上。 硅化物层在其中包含基本均匀分布和浓缩的掺杂剂。 浅层源极/漏极结在自对准层下面。 层间电介质位于半导体衬底之上，并且触点位于硅化物层的层间电介质中。

公开(公告)号：US06878559B2

公开(公告)日：2005-04-12

申请号：US10253121

申请日：2002-09-23

申请人： Peter G. Borden ,  G. Jonathan Kluth ,  Eric Paton

发明人： Peter G. Borden ,  G. Jonathan Kluth ,  Eric Paton

IPC分类号： G01N21/21 ,  G01N21/84 ,  G01N21/95 ,  G01N21/956 ,  G01R31/311 ,  H01L23/544 ,  H01L21/66

CPC分类号： H01L22/34 ,  G01N21/21 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8416 ,  G01N2201/0691 ,  G01R31/311 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： Any semiconductor wafer fabrication process may be changed to monitor lateral abruptness of doped layers as an additional step in the wafer fabrication process. In one embodiment, a test structure including one or more doped regions is formed in a production wafer (e.g. simultaneously with one or more transistors) and one or more dimension(s) of the test structure are measured, and used as an estimate of lateral abruptness in other doped regions in the wafer, e.g. in the simultaneously formed transistors. Doped regions in test structures can be located at regularly spaced intervals relative to one another, or alternatively may be located with varying spacings between adjacent doped regions. Alternatively or in addition, multiple test structures may be formed in a single wafer, with doped regions at regular spatial intervals in each test structure, while different test structures have different spatial intervals.

公开(公告)号：US06638861B1

公开(公告)日：2003-10-28

申请号：US09986263

申请日：2001-11-08

申请人： Minh Van Ngo ,  Eric Paton

发明人： Minh Van Ngo ,  Eric Paton

IPC分类号： H01L2144

CPC分类号： C25D5/50 ,  H01L21/76882

摘要： Reliable contacts/vias are formed by filling an opening in a dielectric layer with W and laser thermal annealing to eliminate or significantly reduce voids. Embodiments include depositing W to fill a contact/via opening in an interlayer dielectric, laser thermal annealing in N2 to elevate the temperature of the W filling the contact/via opening and reflow the W thereby eliminating voids. Embodiments include conducting CMP either before or subsequent to laser thermal annealing.

摘要翻译： 通过用W和激光热退火填充介电层中的开口来形成可靠的触点/通孔，以消除或显着减少空隙。 实施例包括沉积W以填充层间电介质中的接触/通孔开口，在N2中进行激光热退火以升高填充接触/通孔开口的W的温度并回流W，从而消除空隙。 实施例包括在激光热退火之前或之后进行CMP。

公开(公告)号：US06727176B2

公开(公告)日：2004-04-27

申请号：US09986267

申请日：2001-11-08

申请人： Minh Van Ngo ,  Arvind Halliyal ,  Eric Paton

发明人： Minh Van Ngo ,  Arvind Halliyal ,  Eric Paton

IPC分类号： H01L2144

CPC分类号： H01L21/76882

摘要： Reliable Cu interconnects are formed by filling an opening in a dielectric layer with Cu and then laser thermal annealing in NH3 to reduce copper oxide and to reflow the deposited Cu, thereby eliminating voids and reducing contact resistance. Embodiments include laser thermal annealing employing an NH3 flow rate of about 200 to about 2,000 sccn.

摘要翻译： 通过用Cu填充电介质层中的开口，然后在NH 3中激光热退火以形成可靠的Cu互连，以减少氧化铜和回流沉积的Cu，从而消除空隙并降低接触电阻。 实施例包括使用约200至约2,000sccn的NH 3流速的激光热退火。

公开(公告)号：US06399467B1

公开(公告)日：2002-06-04

申请号：US09733779

申请日：2000-12-08

申请人： Jeff Erhardt ,  Eric Paton

发明人： Jeff Erhardt ,  Eric Paton

IPC分类号： H01L213205

CPC分类号： H01L29/66507 ,  H01L21/28052 ,  H01L21/28518

摘要： A method of forming a self-aligned silicide (salicide) with a screening oxide. The method improves transistor speed by lowering the leakage current in the source and drain areas and lowering the polysilicon sheet resistance of the gate. As a result of one embodiment of the present method, a silicide is formed over the gate area which is advantageously about two to three times thicker than silicide formations over the source and drain areas.

摘要翻译： 用筛选氧化物形成自对准硅化物（自对准硅化物）的方法。 该方法通过降低源极和漏极区域中的漏电流并降低栅极的多晶硅片电阻来提高晶体管的速度。 作为本方法的一个实施例的结果，在栅极区域上形成硅化物，其优选在源极和漏极区域上比硅化物层厚约2至3倍。

公开(公告)号：US06387786B1

公开(公告)日：2002-05-14

申请号：US09733778

申请日：2000-12-08

申请人： Jeff Erhardt ,  Eric Paton

发明人： Jeff Erhardt ,  Eric Paton

IPC分类号： H01L21285

CPC分类号： H01L29/66507 ,  H01L29/4933

摘要： The present invention relates to a method of forming a self-aligned silicide (salicide) by siliciding a gate area prior to siliciding a source and drain area and/or spacer formation. The method improves transistor speed by lowering the leakage current in the source and drain areas and lowering the polysilicon sheet resistance of the gate. As a result of one embodiment of the present method, a silicide is formed over the gate area that is advantageously thicker than silicide formations over the source and drain areas.

摘要翻译： 本发明涉及通过在将源极和漏极区域和/或间隔物形成硅化之前将栅极区域硅化来形成自对准硅化物（自对准硅化物）的方法。 该方法通过降低源极和漏极区域中的漏电流并降低栅极的多晶硅片电阻来提高晶体管的速度。 作为本方法的一个实施例的结果，在栅极区域上形成硅化物，其优选在源极和漏极区域上比硅化物层更厚。