摘要:
A system for determining the precision of a numerically controlled machineool involves setting the machine tool control to define a circular path. A circular standard is then aligned with the machine tool to sense the desired circular path. A continuous or pointwise sensing, as a function of whether a path-controlled or a point-by-point-controlled machine is being measured, of the aligned standard is performed. A faulty machine tool does not accurately cover the defined circular path. Variations from the desired circle can be plotted and used for evaluation.
摘要:
A semiconductor module includes first and second sub-units, each including at least one semiconductor chip, a first contact element having a first contact side, and a second or third contact element having a second or third contact side, respectively. The semiconductor chip has opposing first and second main electrode sides. The first main electrode side of the chip is thermally connected to the first contact side, and the second main electrode side is thermally connected to the second or third contact side. In the first sub-unit, a first fixation means connects the first and second contact elements and the chip together. In the second sub-unit, a second fixation means connects the first and third contact elements and the chip together. A flexible element, which is arranged between the first contact element and the first contact element, is electrically and thermally connected to the first contact elements.
摘要:
A first electronic component, e.g., a semiconductor die and a second electronic component, e.g., a substrate, each with a main surface, are bonded to each other by applying at least one metal layer comprising an indium layer on each of the main surfaces. Then the semiconductor die and the substrate are aligned against each other with their main surfaces facing each other. The die and substrate with the metal layers in between form an arrangement, which is introduced into a compression means. Afterwards the arrangement is compressed in the compression means at a pressure in a range of 10 to 35 MPa, and heat in a range of 230 to 275° C. is applied to the arrangement, by which temperature and pressure the electronic components are bonded to each other. The compression process is performable in oxygeneous gas atmosphere inside the compression means.
摘要:
A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method includes steps of bonding an insulating substrate onto a bottom plate; disposing a first conductive layer on a portion of said insulating substrate, so that at least one peripheral top region of said insulating substrate remains uncovered by the first conductive layer; bonding a semiconductor chip onto said first conductive layer; disposing a precursor of a first insulating material in a first corner formed by the first conductive layer and the peripheral region of the insulating substrate; polymerizing the precursor of the first insulating material to form the first insulating material; and covering the semiconductor chip, said substrate, the first conductive layer, and the first insulating material at least partially with a second insulating material. The precursor of the first insulating material can be a low viscosity monomer or oligomer, preferably a polyimide. Also disclosed is a semiconductor module with reduced partial discharge behavior.
摘要:
A power semiconductor module is disclosed with a housing that includes a hardenable plastic casting compound and a base plate, wherein electric power semiconductor components are arranged on a section of the surface of the base plate that faces the housing via an insulating layer. At least the section of the surface of the base plate that faces the housing and contains the electric power semiconductor components is encapsulated in the housing wherein the hardenable plastic casting compound has a hardness between 30 and 95 ShoreA.
摘要:
The semiconductor module comprises a base element (1), an insulating element (2), which is metallized on both sides and rests on the base element by one of the two metallizations, and at least one semiconductor element (6) arranged on the other of the two metallizations. An electrically insulating layer (51) is arranged in the edge region of the insulating element (2), the surface of this insulating layer forming a common planar surface with the surface of the second metallization. The blunting of the edges and corners of the metallization by level embedding of the entire metallized insulating element improves the insulating property of semiconductor module in the area of the critical electrical field region. Moreover, the arrangement in one plane permits simple and low-cost production.
摘要:
The disclosure relates to a connection device, in particular a heavy-duty plug-type connection, with a first connector and a second connector, which each have a contact-making element in order to produce an electrical connection in the connected state of the connectors; the connectors bearing against one another at a connection region in the connected state; at least one of the connectors comprising a coolant line with one or more access points for the supply and discharge, respectively, of a coolant; the coolant line being provided at the contact-making element in order to dissipate heat from a contact point between the contact-making elements; all of the access points of the coolant line being arranged outside of the connection region.
摘要:
A method for assembling a power semiconductor module with reduced partial discharge behavior is described. The method comprises the steps of bonding an insulating substrate (2) onto a bottom plate (11); disposing a first conductive layer (4) on a portion of said insulating substrate (2), so that at least one peripheral top region of said insulating substrate (2) remains uncovered by the first conductive layer (4); bonding a semiconductor chip (6) onto said first conductive layer (4); disposing a precursor (51) of a first insulating material (5) in a first corner (24) formed by said first conductive layer (4) and said peripheral region of said insulating substrate (2); polymerizing the precursor (51) of the first insulating material (5) to form the first insulating material (5): and covering said semiconductor chip (6), said substrate (2), said first conductive layer (4), and said first insulating material (5) at least partially with a second insulating material. According to the invention, the precursor (51) of the first insulating material is a low viscosity monomer or oligomer, which forms a polyimide when polymerizing. Also disclosed is a semiconductor module with reduced partial discharge behavior.
摘要:
A power semiconductor module (1) with a housing (2) and at least one semiconductor chip (3, 3′) located in it is devised. At least one semiconductor chip (3, 3′) has a first main electrode side (31) and a second main electrode side (32) opposite the first main electrode side, the first main electrode side (31) making thermal and electrical contact with the first base plate (4, 4′). The first cooling device (6) makes thermal and electrical contact with the side of the first base plate (41) facing away from the first main electrode side. The second main electrode side (32) makes thermal and electrical contact with a second base plate (5, 5′). A second cooling device (7) makes thermal contact with the side of the second base plate (51) facing away from the second main electrode side. The heat sink (65) of the first cooling device is supported against the housing (2).
摘要:
In the method for mounting electronic components on substrates by means of pressure sintering, a paste which is composed of a metal powder and a solvent is applied between the component and the substrate. Once the paste has dried completely, the component is placed on the substrate. A number of such arrangements (4) together with a substrate and component are then compressed at the sintering temperature in an isostatic press (6). A large number of complex and/or fragile parts can be connected at the same time, and with very high precision.