公开(公告)号：US07065867B2

公开(公告)日：2006-06-27

申请号：US10293933

申请日：2002-11-14

申请人： Woon-bae Kim ,  Hyung-jae Shin ,  Chang-ho Cho ,  Seung-goo Kang

发明人： Woon-bae Kim ,  Hyung-jae Shin ,  Chang-ho Cho ,  Seung-goo Kang

IPC分类号： H05K3/30

CPC分类号： B81C1/00269 ,  H01L21/50 ,  H01L23/10 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15312 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/163 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49146 ,  Y10T29/49789 ,  Y10T29/49794 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A hermetic sealing method, which is capable of preventing oxidation of a micro-electromechanical system (MEMS) and sealing the MEMS at a low temperature. A low temperature hermetic sealing method having a passivation layer includes depositing a junction layer, a wetting layer, and a solder layer on a prepared lid frame, depositing a first protection layer for preventing oxidation on the solder layer and forming a lid, preparing a package base on which a device is disposed, and in which a metal layer and a second protection layer are formed around the device, and assembling the lid and the package base, heating, and sealing them. The protection layer is laminated on the solder layer that is formed by the lid, thereby preventing oxidation without using a flux. The low temperature hermetic sealing method having a passivation layer is suitable for sealing a device, such as the MEMS, which is sensitive to heat, water and other by-products.

公开(公告)号：US06906845B2

公开(公告)日：2005-06-14

申请号：US10690537

申请日：2003-10-23

申请人： Chang-ho Cho ,  Hyung-jae Shin ,  Woon-bae Kim

发明人： Chang-ho Cho ,  Hyung-jae Shin ,  Woon-bae Kim

IPC分类号： B81B3/00 ,  B81C1/00 ,  G02B26/08 ,  G02B26/00

CPC分类号： G02B26/0841 ,  B81B3/0005 ,  B81B2201/042 ,  B81C1/0096 ,  B81C2201/112

摘要： The micro-mechanical structure includes an anti-stiction layer formed by plasma enhanced chemical vapor deposition and plasma etching. The anti-stiction layer is selectively formed on only the area of a substrate other than the top of a movable structure and a part of an electrode that is subsequently bonded to a wire.

摘要翻译： 微机械结构包括通过等离子体增强化学气相沉积和等离子体蚀刻形成的抗静电层。 抗静电层仅选择性地形成在除了可移动结构的顶部之外的基底的区域和随后结合到线的电极的一部分上。

公开(公告)号：US20050161757A1

公开(公告)日：2005-07-28

申请号：US11087552

申请日：2005-03-24

申请人： Chang-ho Cho ,  Hyung-Jae Shin ,  Woon-bae Kim

发明人： Chang-ho Cho ,  Hyung-Jae Shin ,  Woon-bae Kim

IPC分类号： H01L23/14 ,  B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/00 ,  H01L23/04 ,  H01L23/10 ,  H01L21/44

CPC分类号： H01L23/10 ,  B81B7/0077 ,  B81C1/00269 ,  B81C1/00357 ,  B81C2201/019 ,  H01L21/50 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/16235 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A device that is hermetically sealed at a wafer level or a method of hermetically sealing a device, which is sensitive to high temperatures or affected by heating cycles. Semiconductor devices are formed on a wafer. A lid wafer is formed. Adhesives are formed in a predetermined position over the wafer and/or the lid wafer. The wafer and the lid wafer are sealed by the adhesives at the wafer level. The sealing may be performed at a low temperature using a solder to protect the devices sensitive to heat. The sealed devices are diced into individual chips. In the wafer level hermetic sealing method, a sawing operation is performed after the devices are sealed. Therefore, the overall processing time is reduced, devices are protected from the effects of moisture or particles, and devices having a moving structure, such as MEMS devices, are more easily handled.

公开(公告)号：US06969639B2

公开(公告)日：2005-11-29

申请号：US09984734

申请日：2001-10-31

申请人： Chang-ho Cho ,  Hyung-jae Shin ,  Woon-bae Kim

发明人： Chang-ho Cho ,  Hyung-jae Shin ,  Woon-bae Kim

IPC分类号： H01L23/14 ,  B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/00 ,  H01L23/04 ,  H01L23/10 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L23/10 ,  B81B7/0077 ,  B81C1/00269 ,  B81C1/00357 ,  B81C2201/019 ,  H01L21/50 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48227 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/16235 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A device that is hermetically sealed at a wafer level or a method of hermetically sealing a device, which is sensitive to high temperatures or affected by heating cycles. Semiconductor devices are formed on a wafer. A lid wafer is formed. Adhesives are formed in a predetermined position over the wafer and/or the lid wafer. The wafer and the lid wafer are sealed by the adhesives at the wafer level. The sealing may be performed at a low temperature using a solder to protect the devices sensitive to heat. The sealed devices are diced into individual chips. In the wafer level hermetic sealing method, a sawing operation is performed after the devices are sealed. Therefore, the overall processing time is reduced, devices are protected from the effects of moisture or particles, and devices having a moving structure, such as MEMS devices, are more easily handled.

摘要翻译： 在晶片级气密密封的装置或密封装置的方法，其对高温敏感或受加热循环影响。 半导体器件形成在晶片上。 形成盖子晶片。 粘合剂形成在晶片和/或盖晶片上的预定位置。 晶片和盖晶片在晶片级被粘合剂密封。 可以使用焊料在低温下进行密封以保护对热敏感的装置。 将密封的装置切成单独的芯片。 在晶片级密封方法中，在密封装置之后进行锯切操作。 因此，总体处理时间减少，防止装置受潮湿或微粒的影响，并且具有诸如MEMS装置的移动结构的装置更容易处理。

公开(公告)号：US07794799B1

公开(公告)日：2010-09-14

申请号：US10438334

申请日：2003-05-15

申请人： Woon-bae Kim ,  Chang-ho Cho ,  Kae-dong Back ,  Hwan-young Choi

发明人： Woon-bae Kim ,  Chang-ho Cho ,  Kae-dong Back ,  Hwan-young Choi

IPC分类号： B05D3/00

CPC分类号： B82Y30/00 ,  B01J19/0046 ,  B01J2219/00274 ,  B01J2219/00432 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/0061 ,  B01J2219/00612 ,  B01J2219/00619 ,  B01J2219/00626 ,  B01J2219/00637 ,  B01J2219/00659 ,  B01J2219/00722 ,  B01J2219/00725 ,  B01J2219/00731 ,  B01L3/5088 ,  B01L2200/12 ,  C07B2200/11 ,  C40B40/06 ,  C40B40/10 ,  C40B40/12 ,  C40B60/14

摘要： A method for manufacturing an array plate for biomolecules includes coating a surface of a substrate with a hydrophobic material to form a hydrophobic layer having initial hydrophobic properties, etching the hydrophobic layer through an etch mask placed thereon to form a hydrophilic binding site, removing the etch mask, and processing the remaining region of the hydrophobic layer to recover the initial hydrophobic properties. A method for manufacturing a biochip using this array plate, includes processing the surface of the hydrophilic binding site of the array plate to increase an affinity of biomolecules to the hydrophilic binding site, and applying a solution containing biomolecules to the surface of the hydrophilic binding site.

摘要翻译： 用于制造生物分子阵列板的方法包括用疏水材料涂覆基材的表面以形成具有初始疏水性质的疏水层，通过其上放置的蚀刻掩模蚀刻疏水层以形成亲水性结合位点，除去蚀刻 掩模，并处理疏水层的剩余区域以恢复初始疏水性质。 使用该阵列板制造生物芯片的方法包括加工阵列板的亲水性结合位点的表面以增加生物分子对亲水结合位点的亲和力，并将含有生物分子的溶液施加到亲水结合位点的表面 。

公开(公告)号：US07367656B2

公开(公告)日：2008-05-06

申请号：US10773289

申请日：2004-02-09

申请人： Chang-ho Cho ,  Yong-soo Oh ,  Keon Kuk ,  Jong-woo Shin

发明人： Chang-ho Cho ,  Yong-soo Oh ,  Keon Kuk ,  Jong-woo Shin

IPC分类号： B41J2/05

CPC分类号： B41J2/1601 ,  B41J2/1404 ,  B41J2/14137 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1643 ,  B41J2002/1437

摘要： In an ink-jet printhead and a method for manufacturing the same, the ink-jet printhead includes a substrate, an ink chamber to be filled with ink to be ejected formed on an upper surface of the substrate, a restrictor, which is a path through which ink is supplied from an ink reservoir to the ink chamber, perforating a bottom surface of the substrate and a bottom surface of the ink chamber, a nozzle plate, which is stacked on the upper surface of the substrate and forms an upper wall of the ink chamber, a nozzle perforating the nozzle plate at a position corresponding to a center of the ink chamber, a heater formed in the nozzle plate to surround the nozzle, and a conductor for applying a current to the heater.

摘要翻译： 在喷墨打印头及其制造方法中，喷墨打印头包括基板，在基板的上表面上填充要喷射的墨水的墨室，作为路径的限制器 通过该墨水从墨水储存器供应到墨水室，穿透基板的底表面和墨水室的底表面，喷嘴板，其堆叠在基板的上表面上并形成 墨水室，在对应于墨水腔的中心的位置处对喷嘴板进行穿孔的喷嘴，形成在喷嘴板中以围绕喷嘴的加热器，以及用于向加热器施加电流的导体。