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公开(公告)号：US06730454B2
公开(公告)日：2004-05-04
申请号：US10124087
申请日：2002-04-16
申请人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F700
CPC分类号： H01L21/0276 , G03F7/0045 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
摘要翻译： 存在具有发色团部分和透明部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射硬掩模组合物。 这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。 本发明的组合物有利地用于较短波长的光刻工艺和/或具有最小的残留酸含量。
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2.发明授权公开(公告)号：US06641971B2
公开(公告)日：2003-11-04
申请号：US09882234
申请日：2001-06-15
申请人： Wu-Song Huang , David R. Medeiros
发明人： Wu-Song Huang , David R. Medeiros
IPC分类号： G03F7023
CPC分类号： G03F7/0758 , G03F7/0045 , Y10S430/106
摘要： A chemically amplified resist composition comprises an aqueous base soluble polymer or copolymer having one or more polar functional groups, wherein at least one of the functional groups is protected with a cycloaliphatic silyl ketal group but may also include other protecting groups as well as unprotected acidic functionalities. A ratio of protected to unprotected acidic functionalities is preferably selected to most effectively modulate a solubility of the resist composition in an aqueous base or other developer. The resist composition further comprises an acid generator, preferably a photoacid generator (PAG), and a casting solvent, and may also include other components, such as, a base additive and/or surfactant.
摘要翻译： 化学放大抗蚀剂组合物包含具有一个或多个极性官能团的碱性水溶性聚合物或共聚物，其中至少一个官能团用脂环族甲硅烷基缩酮基团保护，但也可包括其它保护基团以及未保护的酸性官能团 。 优选选择被保护的与未保护的酸性官能度的比例以最有效地调节抗蚀剂组合物在碱性水溶液或其它显影剂中的溶解度。 抗蚀剂组合物还包含酸产生剂，优选光酸产生剂（PAG）和浇铸溶剂，并且还可以包括其它组分，例如碱添加剂和/或表面活性剂。
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公开(公告)号：US06689540B2
公开(公告)日：2004-02-10
申请号：US10040446
申请日：2002-01-09
IPC分类号： G03F740
CPC分类号： G03F7/0758 , C08F8/42 , C08F257/02 , C08L51/003 , C08L51/08 , G03F7/038 , G03F7/039 , Y10S430/143 , Y10S430/168 , C08L2666/02
摘要： Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含具有硅，锗和/或锡的聚合物的组合物; 并且接枝到聚合物主链上的保护基可用作抗蚀剂并且对成像照射敏感，同时显示出增强的抗反应离子蚀刻的抗性。
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公开(公告)号：US06346362B1
公开(公告)日：2002-02-12
申请号：US09593704
申请日：2000-06-15
IPC分类号： G03F7039
CPC分类号： G03F7/0758 , C08F8/42 , C08F257/02 , C08L51/003 , C08L51/08 , G03F7/038 , G03F7/039 , Y10S430/143 , Y10S430/168 , C08L2666/02
摘要： Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含具有硅，锗和/或锡的聚合物的组合物; 并且接枝到聚合物主链上的保护基可用作抗蚀剂并且对成像照射敏感，同时显示出增强的抗反应离子蚀刻的抗性。
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5.发明申请Use of Mixed Bases to Enhance Patterned Resist Profiles on Chrome or Sensitive Substrates 有权使用混合基材来增强铬或敏感基材上的图案化抗蚀剂型材公开(公告)号：US20080227030A1
公开(公告)日：2008-09-18
申请号：US10597904
申请日：2004-02-11
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译： 通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。 该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。
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公开(公告)号：US07314700B2
公开(公告)日：2008-01-01
申请号：US10537259
申请日：2002-12-05
申请人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
发明人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
摘要翻译： 具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂 由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也可用于其它平版印刷工艺。
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7.发明授权Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging 失效用化学放大抗蚀剂成像形成50nm或更小半间距特征的方法公开(公告)号：US07090963B2
公开(公告)日：2006-08-15
申请号：US10604082
申请日：2003-06-25
IPC分类号： G03C5/00
摘要： Lithographic imaging of 50 nm (or less) half-pitch features in chemically amplified resists (commonly used in the manufacture of integrated circuits) is enabled by the use of reduced temperature post-exposure processing and low activation energy chemically amplified resists. The post-exposure processing preferably involves ambient to moderately elevated temperature and the presence of a deprotection reaction-dependent co-reactant (e.g., water).
摘要翻译： 通过使用降低温度的曝光后处理和低活化能的化学放大抗蚀剂，能够实现化学放大抗蚀剂中50nm（或更少）半间距特征的平版印刷成像（通常用于集成电路的制造）。 曝光后处理优选包括环境温度至适度升高的温度和脱保护反应依赖性共反应物（例如水）的存在。
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8.发明授权Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates 有权使用混合的底物来增强镀铬或敏感衬底上的抗蚀剂图案公开(公告)号：US07960095B2
公开(公告)日：2011-06-14
申请号：US10597904
申请日：2004-02-11
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译： 通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。 该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。
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9.发明授权Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer 失效超薄聚合物光酸发生剂层和通过使用所述层制造器件和掩模中的至少一个的方法公开(公告)号：US07638266B2
公开(公告)日：2009-12-29
申请号：US10916755
申请日：2004-08-12
申请人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Neal Lang , Wenjie Li , David R. Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo
发明人： Marie Angelopoulos , Gregory Breyta , Wu-Song Huang , Robert Neal Lang , Wenjie Li , David R. Medeiros , Wayne Martin Moreau , Karen Elizabeth Petrillo
IPC分类号： G03F1/00
CPC分类号： C08F220/14 , C08F220/38 , G03F7/0045 , G03F7/095
摘要： A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.
摘要翻译： 用于制造器件和掩模中的至少一个的阻挡层包括形成在衬底和抗蚀剂层之间的聚合物光酸发生器。 阻挡层可以用于例如形成抗蚀剂图像，并且在衬底上形成图案化材料特征。
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10.发明授权Etch improved resist systems containing acrylate (or methacrylate) silane monomers 有权蚀刻改进的含有丙烯酸酯（或甲基丙烯酸酯）硅烷单体的抗蚀剂体系公开(公告)号：US06586156B2
公开(公告)日：2003-07-01
申请号：US09907392
申请日：2001-07-17
申请人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
发明人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/106
摘要： A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.
摘要翻译： 一种化学放大（CA）光刻胶体系，其中提供含有缩酮/酚/硅基侧链的三元共聚物。 除其他外，三元共聚物可提供改进的烘烤技术。 在另一方面，提供了通过缩酮/酚/硅基组合物对基材进行光刻处理的方法和用于制备物体，特别是电子部件的相应方法。
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