公开(公告)号：US20030114017A1

公开(公告)日：2003-06-19

申请号：US10017599

申请日：2001-12-18

Applicant: Xerox Corporation

Inventor： William S. Wong ,  David K. Biegelsen ,  Michael A. Kneissl

IPC: H01L021/31

CPC classification number: H01L21/6835 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L2221/68363 ,  H01S5/0213 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/04 ,  H01S2304/12

Abstract: Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substrate and a laser pulse directed through the transparent sapphire detaches the gallium nitride layers from the sapphire substrate. The gallium nitride layers are then detached from the support substrate forming freestanding gallium nitride substrates.

公开(公告)号：US20030122141A1

公开(公告)日：2003-07-03

申请号：US10320823

申请日：2002-12-16

Applicant: Xerox Corporation

Inventor： William S. Wong ,  Michael A. Kneissl

IPC: H01L033/00

CPC classification number: H01L21/2007 ,  H01L33/0079 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2224/83894 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01S5/0213 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/32341 ,  Y10S438/977 ,  H01L2924/00

Abstract: A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.

公开(公告)号：US20020154187A1

公开(公告)日：2002-10-24

申请号：US09838685

申请日：2001-04-19

Applicant: Xerox Corporation

Inventor： William S. Wong ,  Robert A. Street ,  Stephen D. White ,  Robert Matusiak ,  Raj B. Apte

IPC: B41J029/38 ,  B41J002/135

CPC classification number: B41J2/14008 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337

Abstract: A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.

Abstract translation: 描述用于掩蔽待蚀刻表面的方法和系统。 液滴源喷射掩模材料的液滴以沉积在待蚀刻的薄膜或其它衬底表面上。 控制薄膜或基板表面的温度，使得液滴在与薄膜或基板表面接触时快速冷冻。 然后蚀刻薄膜或衬底。 蚀刻后，去除掩模材料。

公开(公告)号：US20040101987A1

公开(公告)日：2004-05-27

申请号：US10303551

申请日：2002-11-22

Applicant: Xerox Corporation.

Inventor： Michael L. Chabinyc ,  William S. Wong ,  Robert A. Street ,  Kateri E. Paul

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L27/283 ,  H01L51/0003 ,  H01L51/0014 ,  H01L51/0021 ,  H01L51/0512

Abstract: A structure and method of using microfluidic channels to form an array of semiconductor devices is described. The microfluidic channels have been found to be particularly useful when formed in a self aligned process and used to interconnect a series of thin film transistor (TFT) devices.

Abstract translation: 描述了使用微流体通道形成半导体器件阵列的结构和方法。 已经发现微流体通道在自对准工艺中形成并用于互连一系列薄膜晶体管（TFT）器件时特别有用。

公开(公告)号：US20040099911A1

公开(公告)日：2004-05-27

申请号：US10303524

申请日：2002-11-22

Applicant: Xerox Corporation.

Inventor： Michael L. Chabinyc ,  William S. Wong ,  Kateri E. Paul ,  Robert A. Street

IPC: H01L035/24 ,  H01L051/00 ,  H01L023/62

CPC classification number: H01L27/28 ,  H01L25/0655 ,  H01L33/62 ,  H01L51/0512 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and method of using microfluidic channels to form an array of semiconductor devices is described. The microfluidic channels have been found to be particularly useful when formed in a self aligned process and used to interconnect a series of thin film transistor (TFT) devices.

Abstract translation: 描述了使用微流体通道形成半导体器件阵列的结构和方法。 已经发现微流体通道在自对准工艺中形成并用于互连一系列薄膜晶体管（TFT）器件时特别有用。

公开(公告)号：US20040002225A1

公开(公告)日：2004-01-01

申请号：US10186092

申请日：2002-06-27

Applicant: Xerox Corporation

Inventor： William S. Wong ,  Steven E. Ready ,  Stephen D. White ,  Alberto Salleo ,  Michael L. Chabinyc

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L51/0004 ,  B82Y30/00 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L29/66765 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0541

Abstract: A method and system for masking a surface to be etched is described. The method includes the operation of heating a phase-change masking material and using a droplet source to eject droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze after upon contact with the thin-film or substrate surface. The thin-film or substrate is then treated to alter the surface characteristics, typically by depositing a self assembled monolayer on the surface. After deposition, the masking material is removed. A material of interest is then deposited over the substrate such that the material adheres only to regions not originally covered by the mask such that the mask acts as a negative resist. Using such techniques, feature sizes of devices smaller than the smallest droplet printed may be fabricated.

Abstract translation: 描述用于掩蔽待蚀刻表面的方法和系统。 该方法包括加热相变掩模材料和使用液滴源来喷射掩模材料的液滴以沉积在待蚀刻的薄膜或其它基底表面上的操作。 控制薄膜或基板表面的温度，使得在与薄膜或基板表面接触之后液滴快速冷冻。 然后通常通过在表面上沉积自组装的单层来处理薄膜或基底以改变表面特性。 沉积后，去除掩模材料。 然后将感兴趣的材料沉积在衬底上，使得材料仅粘附到最初不被掩模覆盖的区域，使得掩模用作负抗蚀剂。 使用这样的技术，可以制造小于最小液滴印刷的装置的特征尺寸。

公开(公告)号：US20030027082A1

公开(公告)日：2003-02-06

申请号：US09838684

申请日：2001-04-19

Applicant: Xerox Corporation

Inventor： William S. Wong ,  Robert A. Street ,  Stephen D. White ,  Robert Matusiak ,  Raj B. Apte

IPC: G03F009/00 ,  B44C001/22 ,  C23F001/00 ,  C03C025/68 ,  G03C005/00 ,  C03C015/00

CPC classification number: G03F7/2018 ,  B41C1/025 ,  B41M3/006 ,  B41M5/0011 ,  G02F1/1303 ,  H01L27/1292

Abstract: A method and system for masking a surface to be etched is described. A droplet source ejects droplets of a masking material for deposit on a thin-film or other substrate surface to be etched. The temperature of the thin-film or substrate surface is controlled such that the droplets rapidly freeze upon contact with the thin-film or substrate surface. The thin-film or substrate is then etched. After etching the masking material is removed.

Abstract translation: 描述用于掩蔽待蚀刻表面的方法和系统。 液滴源喷射掩模材料的液滴以沉积在待蚀刻的薄膜或其它衬底表面上。 控制薄膜或基板表面的温度，使得液滴在与薄膜或基板表面接触时快速冷冻。 然后蚀刻薄膜或衬底。 蚀刻后，去除掩模材料。