公开(公告)号：US06331380B1

公开(公告)日：2001-12-18

申请号：US09549262

申请日：2000-04-14

申请人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

发明人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

IPC分类号： G03C558

CPC分类号： H01L21/31138 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/0274 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32136 ,  H01L21/32139

摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

摘要翻译： 本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。 使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。 无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。 高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。 这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。 本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。 该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。 蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

公开(公告)号：US6143476A

公开(公告)日：2000-11-07

申请号：US991219

申请日：1997-12-12

申请人： Yan Ye ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma

发明人： Yan Ye ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3213 ,  G03C5/58

CPC分类号： H01L21/0274 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/31116 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32136

摘要： The present disclosure pertains to a method of patterning a semiconductor device feature which provides for the easy removal of any residual masking layer which remains after completion of a pattern etching process. The method provides for a multi-layered masking structure which includes a layer of high-temperature organic-based masking material overlaid by either a layer of a high-temperature inorganic masking material which can be patterned to provide an inorganic hard mask, or by a layer of high-temperature imageable organic masking material which can be patterned to provide an organic hard mask. The hard masking material is used to transfer a pattern to the high-temperature organic-based masking material, and then the hard masking material is removed. The high-temperature organic-based masking material is used to transfer the pattern to an underlying semiconductor device feature.

摘要翻译： 本公开涉及一种图案化半导体器件特征的方法，其提供容易去除在图案蚀刻工艺完成之后保留的任何残留掩模层。 该方法提供了一种多层掩模结构，其包括由可以被图案化以提供无机硬掩模的高温无机掩蔽材料层覆盖的高温有机基掩蔽材料层，或由 可以图案化以提供有机硬掩模的高温可成像有机掩模材料层。 使用硬掩模材料将图案转印到高温有机基掩蔽材料上，然后去除硬掩模材料。 高温有机基掩蔽材料用于将图案转移到下面的半导体器件特征。

公开(公告)号：US6080529A

公开(公告)日：2000-06-27

申请号：US174763

申请日：1998-10-19

申请人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

发明人： Yan Ye ,  Pavel Ionov ,  Allen Zhao ,  Peter Chang-Lin Hsieh ,  Diana Xiaobing Ma ,  Chun Yan ,  Jie Yuan

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3213 ,  G03C5/58

CPC分类号： H01L21/0274 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/31116 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L21/32136

摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

摘要翻译： 本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。 使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。 无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。 高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。 这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。 本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。 该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。 蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

公开(公告)号：US6008140A

公开(公告)日：1999-12-28

申请号：US911878

申请日：1997-08-13

申请人： Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma

发明人： Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma

IPC分类号： C23F4/00 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01L21/02071 ,  C23F4/00 ,  H01L21/32136

摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.

摘要翻译： 铜可以以可接受的速率提供期望的特征尺寸和完整性并且具有相对于相邻材料的选择性的方式进行图案蚀刻。 为了提供特征完整性，已经蚀刻到所需尺寸和形状的铜特征表面的部分在蚀刻相邻特征表面期间必须被保护。 为了避免被蚀刻的铜表面内部的活性物质的捕获，将氢施加到该表面。 氢吸附在铜外表面上，并可能被吸收到铜的外表面，使其可以与否则会渗入该外表面的物质反应并与铜表面反应。 必须向铜特征的蚀刻部分的外表面施加足够的氢以防止由于相邻特征表面的蚀刻而渗透先前蚀刻的特征外表面而存在的入射反应物种。 本发明最优选的实施方案提供了使用氯化氢（HCl）和/或溴化氢（HBr）作为用于蚀刻铜的反应物质的唯一或主要来源。 HCl和/或HBr的离解提供了保护铜特征蚀刻表面免受邻近蚀刻表面的反应性物质渗透所需的大量氢。 当蚀刻处理室中的反应物种密度特别高时，可以向包括HCl和/或HBr的等离子体进料气体中加入另外的氢气。 尽管HCl或HBr可以与其他等离子体原料气体组合使用，但优选HCl或HBr或其组合占等离子体产生的反应性物质的至少40％，更优选至少50％ 。 最优选地，HCl或HBr应占等离子体产生的反应性物质的至少80％。

公开(公告)号：US06534416B1

公开(公告)日：2003-03-18

申请号：US09637509

申请日：2000-08-11

申请人： Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma

发明人： Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma

IPC分类号： H01L21302

CPC分类号： H01L21/02071 ,  C23F4/00 ,  H01L21/32136

摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.

公开(公告)号：US06547978B2

公开(公告)日：2003-04-15

申请号：US10017001

申请日：2001-12-13

申请人： Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma ,  Chang-Lin Hsieh

发明人： Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma ,  Chang-Lin Hsieh

IPC分类号： B44C0122

CPC分类号： H01L21/02071 ,  C23F4/00 ,  H01L21/32136

摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. This is particularly important for feature sizes less than about 0.5 &mgr;m, where presence of even a limited amount of a corrosive agent can eat away a large portion of the feature. The copper feature integrity is protected by several different mechanisms: 1) The reactive etchant species are designed to be only moderately aggressive, so that an acceptable etch rate is achieved without loss of control over the feature profile or the etch surface; 2) Hydrogen is applied over the etch surface so that it is absorbed onto the etch surface, where it acts as a boundary which must be crossed by the reactive species and a chemical modulator for the reactive species; and 3) Process variables are adjusted so that byproducts from the etch reaction are rendered more volatile and easily removable from the etch surface. In an inductively coupled plasma etch chamber, we have observed that the preferred chlorine reactive species are generated when the chlorine is dissociated from compounds rather than furnished as Cl2 gas.

公开(公告)号：US06489247B1

公开(公告)日：2002-12-03

申请号：US09393446

申请日：1999-09-08

申请人： Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma

发明人： Yan Ye ,  Allen Zhao ,  Xiancan Deng ,  Diana Xiaobing Ma

IPC分类号： H01L21302

CPC分类号： H01L21/02071 ,  C23F4/00 ,  H01L21/32136

摘要： Copper can be pattern etched in a manner which provides the desired feature dimension and integrity, at acceptable rates, and with selectivity over adjacent materials. To provide for feature integrity, the portion of the copper feature surface which has been etched to the desired dimensions and shape must be protected during the etching of adjacent feature surfaces. To avoid the trapping of reactive species interior of the etched copper surface, hydrogen is applied to that surface. Hydrogen is adsorbed on the copper exterior surface and may be absorbed into the exterior surface of the copper, so that it is available to react with species which would otherwise penetrate that exterior surface and react with the copper interior to that surface. Sufficient hydrogen must be applied to the exterior surface of the etched portion of the copper feature to prevent incident reactive species present due to etching of adjacent feature surfaces from penetrating the previously etched feature exterior surface. The most preferred embodiment of the invention provides for the use of hydrogen chloride (HCl) and/or hydrogen bromide (HBr) as the sole or principal source of the reactive species used in etching copper. Dissociation of the HCl and/or HBr provides the large amounts of hydrogen necessary to protect the copper feature etched surfaces from penetration by reactive species adjacent the etched surface. Additional hydrogen gas may be added to the plasma feed gas which comprises the HCl and/or HBr when the reactive species density in the etch process chamber is particularly high. Although the HCl or HBr may be used as an additive in combination with other plasma feed gases, preferably HCl or HBr or a combination thereof accounts for at least 40%, and more preferably at least 50%, of the reactive species generated by the plasma. Most preferably, HCl or HBr should account for at least 80% of the reactive species generated by the plasma.

摘要翻译： 铜可以以可接受的速率提供期望的特征尺寸和完整性并且具有相对于相邻材料的选择性的方式进行图案蚀刻。 为了提供特征完整性，已经蚀刻到所需尺寸和形状的铜特征表面的部分在蚀刻相邻特征表面期间必须被保护。 为了避免被蚀刻的铜表面内部的活性物质的捕获，将氢施加到该表面。 氢吸附在铜外表面上，并可能被吸收到铜的外表面，使其可以与否则会渗入该外表面的物质反应并与铜表面反应。 必须向铜特征的蚀刻部分的外表面施加足够的氢以防止由于相邻特征表面的蚀刻而渗透先前蚀刻的特征外表面而存在的入射反应物种。 本发明最优选的实施方案提供了使用氯化氢（HCl）和/或溴化氢（HBr）作为用于蚀刻铜的反应物质的唯一或主要来源。 HCl和/或HBr的离解提供了保护铜特征蚀刻表面免受邻近蚀刻表面的反应性物质渗透所需的大量氢。 当蚀刻处理室中的反应物种密度特别高时，可以向包括HCl和/或HBr的等离子体进料气体中加入另外的氢气。 尽管HCl或HBr可以与其他等离子体原料气体组合使用，但优选HCl或HBr或其组合占等离子体产生的反应性物质的至少40％，更优选至少50％ 。 最优选地，HCl或HBr应占等离子体产生的反应性物质的至少80％。

公开(公告)号：US06248250B1

公开(公告)日：2001-06-19

申请号：US08897436

申请日：1997-07-21

申请人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Saizman ,  Peter K. Loewenhardt ,  Allen Zhao

发明人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Saizman ,  Peter K. Loewenhardt ,  Allen Zhao

IPC分类号： H05H146

CPC分类号： H01J37/321

摘要： The present invention adheres to an optimized coil-domed geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.

摘要翻译： 本发明坚持优化的线圈圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶点高度范围和相对于圆顶顶点的特定晶片位置范围。

公开(公告)号：US5779926A

公开(公告)日：1998-07-14

申请号：US596960

申请日：1996-02-05

申请人： Diana Xiaobing Ma ,  Daisuke Tajima ,  Allen Zhao ,  Peter K. Loewenhardt ,  Timothy R. Webb

发明人： Diana Xiaobing Ma ,  Daisuke Tajima ,  Allen Zhao ,  Peter K. Loewenhardt ,  Timothy R. Webb

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  B44C1/22 ,  C23F1/00 ,  H01L21/00

CPC分类号： H01J37/321 ,  C23F4/00 ,  H01L21/32136

摘要： A method of etching a multicomponent alloy on a substrate, without forming etchant residue on the substrate, is described. In the method, the substrate is placed in a process chamber comprising a plasma generator and plasma electrodes. A process gas comprising a volumetric flow ratio V.sub.r of (i) a chlorine-containing gas capable of ionizing to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions, and (ii) an inert gas capable of enhancing dissociation of the chlorine-containing gas, in introduced into the process chamber. The process gas is ionized to form plasma ions that energetically impinge on the substrate by (i) applying RF current at a first power level to the plasma generator, and (ii) applying RF current at a second power level to the plasma electrodes. The combination of (i) the volumetric flow ratio V.sub.r of the process gas and (ii) the power ratio P.sub.r of the first power level to the second power level, is selected so that the chlorine-containing etchant gas ionizes to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions in a number ratio of at least about 0.6:1. The increased amount of dissociated Cl.sup.+ ions relative to non-dissociated Cl.sub.2.sup.+ ions etches the multicomponent alloy on the substrate at an etch rate of at least about 500 nm/min, without forming etchant residue on the substrate.

摘要翻译： 描述了在衬底上蚀刻多组分合金而不在衬底上形成蚀刻剂残留物的方法。 在该方法中，将基板放置在包括等离子体发生器和等离子体电极的处理室中。 一种工艺气体，其包括（i）能够电离以形成离解的Cl +等离子体离子和非离解的Cl 2 +等离子体离子的含氯气体的体积流量比Vr，和（ii）能够增强氯 - 含有气体，被引入处理室。 通过（i）以等离子体发生器施加第一功率电平的RF电流，并且（ii）将第二功率电平的RF电流施加到等离子体电极，将工艺气体电离以形成能量地撞击衬底的等离子体离子。 选择（i）处理气体的体积流量比Vr和（ii）第一功率水平与第二功率水平的功率比Pr的组合，使得含氯蚀刻剂气体电离以形成离解的Cl +等离子体 离子和非离解的Cl2 +等离子体离子的数量比至少为约0.6:1。 解离的Cl +离子相对于未离解的Cl 2 +离子的量的增加量以至少约500nm / min的蚀刻速率蚀刻衬底上的多组分合金，而不在衬底上形成蚀刻剂残留物。

公开(公告)号：US5777289A

公开(公告)日：1998-07-07

申请号：US597445

申请日：1996-02-02

申请人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Salzman ,  Peter K. Loewenhardt ,  Allen Zhao

发明人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Salzman ,  Peter K. Loewenhardt ,  Allen Zhao

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K10/00

CPC分类号： H01J37/321

摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling. The present invention adheres to an optimized coil-dome geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.

摘要翻译： 用于处理半导体晶片的感应耦合RF等离子体反应器包括具有侧壁和天花板的反应室，用于将晶片支撑在室中的晶片基座，RF电源，将处理气体引入反应室的装置，以及 与所述反应室相邻的线圈电感器，所述线圈电感器连接到所述RF电源，所述线圈电感器包括（a）面向所述侧壁的一部分并包括底部绕组和顶部绕组的侧面部分，所述顶部绕组的高度对应于 至少约至顶部的顶部高度，以及（b）从侧部的顶部绕组径向向内延伸的顶部部分，以覆盖至少大部分天花板。 本发明遵循优化的线圈 - 圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶部高度范围和相对于圆顶顶点的特定晶片位置范围。