公开(公告)号：US4554478A

公开(公告)日：1985-11-19

申请号：US497841

申请日：1983-05-25

申请人： Yasuharu Shimomoto ,  Yasuo Tanaka ,  Yukio Takasaki ,  Sachio Ishioka ,  Toshihisa Tsukada ,  Toru Baji

发明人： Yasuharu Shimomoto ,  Yasuo Tanaka ,  Yukio Takasaki ,  Sachio Ishioka ,  Toshihisa Tsukada ,  Toru Baji

IPC分类号： H01J29/45 ,  H01L27/146 ,  H01L31/0224 ,  H04N5/335 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01J31/38

CPC分类号： H01L27/14665 ,  H01J29/45 ,  H01J29/456 ,  H01L31/022408

摘要： In a photoelectric conversion element including at least a first electrode and a photoconductive layer having an amorphous material whose indispensable constituent is silicon and which contains hydrogen as an essential constituent element on a predetermined substrate, the present invention discloses a photoelectric conversion element wherein said layer of the amorphous material is disposed on said first electrode via a light transmitting or light semi-transmitting metallic layer for adhesion with respect to said amorphous material. As said metallic layer for adhesion, preferred is a layer consisting of at least one metal selected from the group consisting of Ta, Cr, W, Nd, Mo, V and Ti. Thus, adhesion between said substrate and said amorphous material can be improved.

摘要翻译： 在至少具有第一电极和光电导层的光电转换元件中，所述光电转换元件具有不可缺少的成分为硅并且含有作为必要构成元素的氢作为预定基板的非晶材料的光电转换元件，本发明公开了一种光电转换元件， 非晶材料通过透光或半透光金属层设置在所述第一电极上，用于相对于所述无定形材料的粘合。 作为所述金属粘合层，优选由选自Ta，Cr，W，Nd，Mo，V和Ti中的至少一种金属组成的层。 因此，可以提高所述基板和所述非晶材料之间的粘附。

公开(公告)号：US4495409A

公开(公告)日：1985-01-22

申请号：US348669

申请日：1982-02-16

申请人： Toru Baji ,  Naohiko Koizumi ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuharu Shimomoto ,  Yasuo Tanaka

发明人： Toru Baji ,  Naohiko Koizumi ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuharu Shimomoto ,  Yasuo Tanaka

IPC分类号： H01L27/146 ,  H04N1/031 ,  H04N1/193 ,  H01J40/14

CPC分类号： H04N1/031 ,  H01L27/14643 ,  H01L27/14665 ,  H04N1/1931

摘要： A photosensor comprising an array of a plurality of unit picture elements each of which is constituted by a serial connection of a photoconductor film and a diode or a combination of a photodiode and a diode connected in series to the photodiode in the opposite rectifying direction, wherein the plurality of unit picture elements being divided into at least two groups, the unit picture elements belonging to the respective groups being connected to corresponding first group of wiring conductors provided in association with the groups, respectively, while the unit picture elements belonging to the different groups and located at same positions in the different groups relative to one another are connected together to respective second group of wiring conductors, including a first biasing controller for applying a voltage to the first group of wiring conductor connected to the picture element from which a signal is to be read out, the voltage serving for biasing forward the diode of the picture element to be read out, while no forward bias voltage is applied to the first group of wiring conductors connected to the unit picture elements from which signals are not to be read out; and a second biasing controller provided for one of the second group of wiring conductor connected to the unit picture element to be read out for grounding or biasing forward the diode of the picture element to be read out through a capacitance, whereby electric charges stored at nodes located between the photoconductor films and the diodes or between the photodiodes and the diodes, respectively, are sequentially read out as signals.

摘要翻译： 一种光电传感器，包括多个单元图像的阵列，每个单元图像元素由感光体膜和二极管的串联连接构成，或者在相反的整流方向上与光电二极管串联连接的二极管的组合，其中 多个单位图像元素被划分为至少两组，属于各组的单位图像元素分别连接到与组相关联地设置的相应的第一组布线导体，而属于不同组的单位图像元素 并且相对于彼此位于不同组中的相同位置处连接到相应的第二组布线导体，包括用于向连接到图像元件的第一组布线导体施加电压的第一偏置控制器， 要读出，用于偏压图像的二极管的电压 同时没有正向偏置电压施加到连接到不读出信号的单元图像的第一组布线导体; 以及第二偏置控制器，被设置为连接到要读出的单元像素的第二组布线导体中的一个，用于通过电容接地或偏置要读出的像素的二极管，从而存储在节点 分别位于光电导体膜和二极管之间或者位于光电二极管和二极管之间的光信号作为信号被依次读出。

公开(公告)号：US4380557A

公开(公告)日：1983-04-19

申请号：US287554

申请日：1981-07-28

申请人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

发明人： Sachio Ishioka ,  Yasuharu Shimomoto ,  Yoshinori Imamura ,  Saburo Ataka ,  Yasuo Tanaka ,  Hirokazu Matsubara ,  Yukio Takasaki ,  Eiichi Maruyama

IPC分类号： G03G5/08 ,  B05D3/02 ,  B05D3/04 ,  H01J9/233 ,  H01L21/205 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10

CPC分类号： H01J9/233

摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.

摘要翻译： 在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性 通过这种热处理高度改善了层。 例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。 当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为 观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。 增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

公开(公告)号：US4457949A

公开(公告)日：1984-07-03

申请号：US388619

申请日：1982-06-15

申请人： Yukio Takasaki ,  Yasuharu Shimomoto ,  Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada

发明人： Yukio Takasaki ,  Yasuharu Shimomoto ,  Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada

IPC分类号： H01L31/0248 ,  H01L31/08 ,  B05D3/14 ,  B05D5/12

CPC分类号： H01J9/233 ,  H01L31/08

摘要： A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200.degree. C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of 200.degree. C.-400.degree. C. without cooling the substrate. The saturation field for photocurrent of electrons or holes can be made low. In case of using electrons as major carriers, preferably the heating temperature is set in a temperature range of 200.degree. C.-240.degree. C., and in case of using holes as major carriers, preferably it is set in a range of 270.degree. C.-400.degree. C.

摘要翻译： 在等离子体气氛中，在200℃以下的基板上形成含氢非晶硅层，停止等离子体，在200〜400℃的温度范围内加热该层 底物。 可以使电子或空穴的光电流的饱和场低。 在使用电子作为主要载体的情况下，优选将加热温度设定在200℃-240℃的温度范围内，在使用空穴作为主要载体的情况下，优选设定在270℃ C.-400℃

公开(公告)号：US4430185A

公开(公告)日：1984-02-07

申请号：US245749

申请日：1981-03-20

申请人： Yasuharu Shimomoto ,  Toshihisa Tsukada ,  Akira Sasano ,  Yasuo Tanaka ,  Hideaki Yamamoto ,  Yukio Takasaki

发明人： Yasuharu Shimomoto ,  Toshihisa Tsukada ,  Akira Sasano ,  Yasuo Tanaka ,  Hideaki Yamamoto ,  Yukio Takasaki

IPC分类号： C23C14/00 ,  C23C16/509 ,  H01L27/146 ,  H01L31/20 ,  H04N5/335 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  C23C15/00

CPC分类号： C23C14/0036 ,  C23C16/5096 ,  H01L27/14665 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： In the method of producing photoelectric transducers having processes for forming a photoconductive layer on a predetermined substrate with an irregular surface by a method of depositing the photoconductive layer in the atmosphere including at least plasma, the predetermined substrate with irregular surface is disposed above a first electrode to which an electrode is opposed, and said photoconductive layer is formed while a negative potential is being applied to the first electrode. This enables the photoconductive layer to be formed without breaks at steps, pinholes and so on due to the irregular surface, and therefore, it is possible to provide good photoelectric transducers with small dark current.

摘要翻译： 在具有通过在包括至少等离子体的气氛中沉积光电导层的方法的具有不规则表面的预定基板上形成光电导层的工艺的方法中，具有不规则表面的预定基板设置在第一电极 电极相对，并且所述光导电层形成，同时向第一电极施加负电位。 这使得光电导层由于不规则的表面而在步骤，针孔等形成而不会发生断裂，因此，可以提供具有小暗电流的良好光电传感器。

公开(公告)号：US4900975A

公开(公告)日：1990-02-13

申请号：US67229

申请日：1987-06-29

申请人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

发明人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

IPC分类号： H01L31/08 ,  H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

摘要翻译： 图像拾取管的目标是通过在透光性基板上层叠至少透明导电膜，基本上由硅构成的非晶层和基本上由硒组成的非晶层。

公开(公告)号：US4829345A

公开(公告)日：1989-05-09

申请号：US857089

申请日：1986-04-29

申请人： Sachio Ishioka ,  Kazutaka Tsuji ,  Yukio Takasaki ,  Yasuharu Shimomoto ,  Hirokazu Matsubara ,  Tadaaki Hirai

发明人： Sachio Ishioka ,  Kazutaka Tsuji ,  Yukio Takasaki ,  Yasuharu Shimomoto ,  Hirokazu Matsubara ,  Tadaaki Hirai

IPC分类号： H01L27/00 ,  G02B6/12 ,  G02B6/43 ,  H01L27/15 ,  H01L31/12

CPC分类号： H04B10/801 ,  G02B6/12002 ,  G02B6/43 ,  H01L31/12

摘要： Within an electronic device having a plurality of circuit parts (such as a three-dimensional device), a light transmission system which transfers signals between the circuit parts by the use of light is provided.The light transmission system is formed of a light emitting source which emits light having a desired wavelength, a photoelectric conversion portion which absorbs the light and converts it into an electric signal, and a light traveling path which conveys the light emitted from the light emitting source to the photoelectric conversion portion.Further, each of the light emitting source, the light traveling path and the photoelectric conversion portion is formed of a superlattice structure in which a plurality of materials of unequal energy gaps are layered.

摘要翻译： 在具有多个电路部分（例如三维装置）的电子装置中，提供了通过使用光在电路部分之间传送信号的光传输系统。 光传输系统由发射具有期望波长的光的发光源，吸收光并将其转换为电信号的光电转换部分和从发光源发射的光传输的光行进路径 到光电转换部分。 此外，发光源，光行进路径和光电转换部分中的每一个由层叠不同能隙的多种材料的超晶格结构形成。

公开(公告)号：US4419604A

公开(公告)日：1983-12-06

申请号：US257611

申请日：1981-04-24

申请人： Sachio Ishioka ,  Yoshinori Imamura ,  Yasuharu Shimomoto ,  Saburo Ataka ,  Yasuo Tanaka ,  Eiichi Maruyama

发明人： Sachio Ishioka ,  Yoshinori Imamura ,  Yasuharu Shimomoto ,  Saburo Ataka ,  Yasuo Tanaka ,  Eiichi Maruyama

IPC分类号： H01J29/45 ,  H01L21/205 ,  H01L27/146 ,  H01L31/0248 ,  H01L31/09 ,  H04N5/30 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374

CPC分类号： H01L31/095 ,  H01J29/456 ,  H01J9/233 ,  H01L27/14665

摘要： Disclosed is a light sensitive screen including at least a light-transmitting conductive film and a photoconductive layer, the light-transmitting conductive film being arranged on a side of incidence of light, characterized in that the photoconductive layer is constructed of a single layer or a plurality of layers of one or more photoconductive substances, at least one of such photoconductive substance layers being formed of an amorphous silicon material which contains at least 5 atomic-% to 30 atomic-% of hydrogen, whose optical forbidden band gap is 1.65 eV to 2.25 eV and whose peak component in an infrared absorption spectrum at a wave number of 2,100 cm.sup.-1 is greater than that at a wave number of 2,000 cm.sup.-1. Various characteristics of an imaging device provided with the light sensitive screen, such as dark current, lag and after image characteristics, are improved.

摘要翻译： 公开了一种至少包括透光导电膜和光电导层的感光屏，所述透光导电膜布置在光入射侧，其特征在于，所述光电导层由单层或 多层一层或多层感光物质，至少一层这样的光电导物质层由含有至少5原子％至30原子％氢的非晶硅材料形成，其光学禁带宽为1.65eV至 2.25eV，其波数为2100cm -1的红外吸收光谱中的峰分量大于2000cm -1的波数时的峰分量。 提供了诸如暗电流，滞后和后图像特性的光敏屏幕的成像装置的各种特性得到改善。

公开(公告)号：US4412900A

公开(公告)日：1983-11-01

申请号：US357076

申请日：1982-03-11

申请人： Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto

发明人： Yasuo Tanaka ,  Akira Sasano ,  Toshihisa Tsukada ,  Yasuharu Shimomoto

IPC分类号： H01L31/10 ,  H01L27/146 ,  C23C15/00

CPC分类号： H01L27/14665 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14692

摘要： A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140.degree. C. and not higher than 280.degree. C. The heat treatment is performed preferably at a temperature between 170.degree. to 250.degree. C., at which greater effect will be provided. This heat treatment remarkably improves the photo-response speed.

摘要翻译： 公开了一种制造光电传感器的方法，其包括以下步骤：在期望的衬底上形成主要由硅构成并含有氢的光导体膜，通过溅射在光致导体膜上形成透明导电膜，并加热具有 溅射的透明导电膜至少在140℃且不高于280℃。优选在170-250℃的温度下进行热处理，在该温度下将提供更大的效果。 这种热处理显着提高了光响应速度。

公开(公告)号：US4378417A

公开(公告)日：1983-03-29

申请号：US254294

申请日：1981-04-15

申请人： Eiichi Maruyama ,  Sachio Ishioka ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Yasuharu Shimomoto ,  Shinkichi Horigome ,  Yoshio Taniguchi

发明人： Eiichi Maruyama ,  Sachio Ishioka ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Yasuharu Shimomoto ,  Shinkichi Horigome ,  Yoshio Taniguchi

IPC分类号： G03G5/08 ,  G03G5/082 ,  H01L21/205 ,  H01L31/08

CPC分类号： G03G5/08235 ,  G03G5/08221

摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

摘要翻译： 在采用非晶硅光电导层的电子照相构件中，从非晶硅层的表面（或界面）向内至少10nm厚的非晶硅层的部分由非晶硅制成，该非晶硅具有光学禁带隙 至少1.6eV，电阻率至少为1010欧米加。 电子照相成像显示出令人满意的分辨率和良好的暗衰变特性。 此外，具有窄于形成表面（或界面）区域的非晶硅的光学禁止带隙的区域设置在至少10nm的厚度的非晶硅层内，由此将电子照相构件的灵敏度设置为 可以增加更长波长的光。