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公开(公告)号：US4673959A
公开(公告)日：1987-06-16
申请号：US686661
申请日：1984-12-27
申请人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
发明人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L29/205 , H01L29/423 , H01L29/778 , H01L29/80
CPC分类号： H01L29/42316 , H01L29/7781 , H01L29/7786
摘要： There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and drain areas on opposite edges of the channel, wherein the first and second semiconductor layers formed between the source and drain regions have an area containing only 10.sup.16 cm.sup.-3 or less of an impurity; the first semiconductor layer has a wider forbidden band than that of the second semiconductor layer; and further including at least one semiconductor layer having a higher activation efficiency of impurities than that of the first semiconductor layer, with such at least one semiconductor layer being located on the side of the first semiconductor layer not in contact with the second semiconductor layer. A multi-quantum well structure may be used as the higher impurity activation efficiency semiconductor layer. The electrical resistance in the semiconductor area constituting the source and drain regions can be lowered by utilizing such a higher impurity activation efficiency semiconductor layer.
摘要翻译： 公开了一种半导体器件，其至少包括第一和第二半导体层，该第一和第二半导体层被定位以在它们之间形成异质结，这样的异质结适于形成沟道，用于控制载流子的装置，以及在其的相对边缘上的源极和漏极区域 沟道，其中形成在源区和漏区之间的第一和第二半导体层具有仅含有1016cm-3或更小的杂质的面积; 第一半导体层具有比第二半导体层更宽的禁带; 并且还包括至少一个具有比第一半导体层高的杂质活化效率的半导体层，这样的至少一个半导体层位于不与第二半导体层接触的第一半导体层的一侧。 可以使用多量子阱结构作为较高的杂质活化效率半导体层。 通过利用这种较高的杂质活化效率的半导体层，可以降低构成源区和漏区的半导体区的电阻。
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公开(公告)号：US4605945A
公开(公告)日：1986-08-12
申请号：US609446
申请日：1984-05-11
申请人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
发明人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L27/06 , H01L29/10 , H01L29/778 , H01L29/80
CPC分类号： H01L27/0605 , H01L29/1075 , H01L29/7786 , H01L29/7787
摘要： In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than an edge of a conduction band of the second semiconductor layer in the vicinity of the heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers induced in the vicinity of the heterojunction; a semiconductor device characterized in that a low impurity concentration region is comprised in at least the part of the first semiconductor layer between the pair of electrodes, that a region adjoining each of the pair of electrodes is a high impurity concentration region, and that at least one layer containing an impurity which has a conductivity type identical or opposite to that of an impurity contained in the aforementioned regions is comprised in the first semiconductor layer.
摘要翻译： 在具有布置成形成异质结的至少第一半导体层和第二半导体层的半导体器件中，第一半导体层的导带的边缘的能量位于能量低于导带的边缘的能量 异质结附近的第二半导体层，与第一半导体层电连接的至少一对电极，以及控制在异质结附近诱发的载流子的装置; 一种半导体器件，其特征在于，在所述一对电极之间的所述第一半导体层的至少一部分中包含低杂质浓度区域，与所述一对电极中的每一对相邻的区域是高杂质浓度区域，并且至少 在第一半导体层中包含含有与上述区域中所含的杂质相同或相反的导电型的杂质的一层。
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公开(公告)号：US4433202A
公开(公告)日：1984-02-21
申请号：US362115
申请日：1982-03-26
申请人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
发明人： Eiichi Maruyama , Toshikazu Shimada , Yasuhiro Shiraki , Yoshifumi Katayama , Hirokazu Matsubara , Akitoshi Ishizaka , Yoshimasa Murayama , Akira Shintani
IPC分类号： H01L31/04 , H01L31/0368 , H01L31/0392 , H01L31/06
CPC分类号： H01L31/03682 , H01L31/03921 , Y02E10/546
摘要： A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element.The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.
摘要翻译： 一种在基板上形成的薄膜太阳能电池，其至少包括第一和第二电极，其中至少一个能够通过光，插入在所述第一和第二电极之间的硅膜，以及形成在硅膜中的至少一个结 用于在电池暴露于光时分离电子和正空穴，其中所述硅膜包括由多晶相和非晶相组成的混合相，并且包括至少约50体积％的纤维状晶粒，每个所述晶粒 具有约1μm的最大底部直径和约50nm的最小高度，并且其晶界用一价元素封端。 太阳能电池具有与单晶太阳能电池相当的高的光电转换效率，并且可以以低成本生产。
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公开(公告)号：US4559547A
公开(公告)日：1985-12-17
申请号：US444233
申请日：1982-11-24
IPC分类号： H01L21/265 , H01L21/338 , H01L27/06 , H01L29/778 , H01L29/80 , H01L29/812 , H01L29/78
CPC分类号： H01L29/80 , H01L27/0605 , H01L29/7783 , H01L29/7786 , H01L29/7787
摘要： The semiconductor device of the present invention is characterized by a device consisting of at least a heterojunction formed by the first semiconductor layer and the second semiconductor layer where the forbidden band gap of the said first semiconductor is smaller than that of the said second semiconductor, at least one pair of electrode regions connected electronically to the said first semiconductor and a means to control the carrier density in the said first semiconductor layer where the impurities are not included effectively in the region in the first semiconductor under the means to control the carriers and are included in the region adjacent to the said one pair of electrodes. The density of the impurities in these region are preferably be larger than 10.sup.16 cm.sup.-3.
摘要翻译： 本发明的半导体器件的特征在于，由至少由第一半导体层和第二半导体层形成的异质结构成的器件，其中所述第一半导体的禁带宽小于所述第二半导体的禁带宽， 电子地连接到所述第一半导体的至少一对电极区域和控制所述第一半导体层中的载流子密度的装置，其中杂质不被有效地包含在控制载流子的装置下的第一半导体区域中，并且分别是 包括在与所述一对电极相邻的区域中。 这些区域中杂质的密度优选大于1016cm-3。
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公开(公告)号：US4351856A
公开(公告)日：1982-09-28
申请号：US170185
申请日：1980-07-18
IPC分类号： G09G3/36 , H01L21/203 , H01L21/336 , H01L27/12 , H01L27/146 , H01L29/04 , H01L29/78 , H01L29/786 , B05D3/06 , B05D5/12 , B32B17/06
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/02631 , H01L21/02639 , H01L27/12 , H01L27/14643 , H01L27/14665 , H01L29/04 , H01L29/78675 , Y10S148/169 , Y10S438/909
摘要： A semiconductor device is disclosed wherein a polycrystalline film whose principal constituent is silicon is formed on an amorphous or polycrystalline substrate, the polycrystalline film having a carrier mobility of at least 1 cm.sup.2 /V.multidot.sec, and wherein at least one active device is formed by employing the polycrystalline film as its material. A large-area or elongate active device can be provided. The polycrystalline film for such semiconductor device is formed by a method wherein the amorphous or polycrystalline substrate is mounted in a vacuum chamber and wherein the polycrystalline film whose principal constituent is silicon is evaporated on the substrate under the conditions that the pressure during the evaporation is below 1.times.10.sup.-8 Torr and that the partial pressure of oxygen during the evaporation is below 1.times.10.sup.-9 Torr.
摘要翻译： 公开了一种半导体器件，其中主要成分为硅的多晶膜形成在非晶或多晶衬底上，所述多晶膜的载流子迁移率为至少1cm 2 / Vxsec，并且其中至少一个有源器件通过使用 多晶膜作为其材料。 可以提供大面积或细长的有源装置。 用于这种半导体器件的多晶膜通过一种方法形成，其中非晶或多晶衬底安装在真空室中，其中主要成分为硅的多晶膜在蒸发过程中的压力低于条件下在衬底上蒸发 1×10 -8乇，蒸发时的氧分压低于1×10 -9乇。
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公开(公告)号：US4904989A
公开(公告)日：1990-02-27
申请号：US115616
申请日：1987-10-30
IPC分类号： G02F1/133 , G02F1/1335 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L23/48
CPC分类号： G02F1/1368 , G02F1/133512 , G02F2202/104
摘要： In a display device having, at least, picture elements which are arrayed on a transparent insulating substrate, and transistor portions which are formed of a semiconductor layer formed on the transparent insulating substrate; a display device characterized in that, at least, interconnection parts of the transistor portions extend above the semiconductor layer formed on the transparent insulating substrate.The disconnection of the interconnection parts can be avoided.
摘要翻译： 在至少具有排列在透明绝缘性基板上的像素的显示装置以及由形成于透明绝缘基板上的半导体层形成的晶体管部分的显示装置中， 一种显示装置，其特征在于，至少晶体管部分的互连部分在形成在透明绝缘基板上的半导体层的上方延伸。 可以避免互连部件断开。
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公开(公告)号：US4613382A
公开(公告)日：1986-09-23
申请号：US710953
申请日：1985-03-14
IPC分类号： H01L29/78 , H01L21/205 , H01L21/86 , H01L29/04 , H01L29/167 , H01L29/786 , H01L31/0368 , H01L31/04 , H01L21/223 , H01L21/322
CPC分类号： H01L21/0242 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/167 , H01L29/78672 , H01L29/78684 , H01L31/03682 , Y02E10/546 , Y10S438/958
摘要： A semiconductor device includes a polycrystalline semiconductor film body having at least one element selected from a group consisting of hydrogen, fluorine, chlorine, bromine, iodine, lithium, sodium, potassium, rubidium, and cesium included mainly around grain boundaries of the polycrystalline semiconductor film. The simultaneous inclusion of one of the halogen elements and one of the monovalent metal elements of the group described above is more effective to quench charges of the elements included. The content of the elements included is up to 40% by atomic ratio. As a result, the electronic characteristic of the polycrystalline semiconductor film are substantially improved.
摘要翻译： 半导体器件包括具有选自氢，氟，氯，溴，碘，锂，钠，钾，铷和铯中的至少一种元素的多晶半导体膜体，主要在多晶半导体膜的晶界周围 。 同时包含上述卤素元素和一价金属元素中的一种对于包含的元素的猝灭电荷更有效。 所含元素的含量高达原子比的40％。 结果，多晶半导体膜的电子特性显着提高。
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公开(公告)号：US4405879A
公开(公告)日：1983-09-20
申请号：US246588
申请日：1981-03-23
CPC分类号： H01J29/456 , H01J9/233
摘要： There is disclosed a photoelectric conversion device comprising a transparent substrate; a transparent conductive film formed on said substrate; a photoconductive layer formed of hydrogenated amorphous silicon as an indispensable component and deposited on said transparent conductive film; and a chalcogen glass film formed on said photoconductive layer, wherein said chalcogen glass film includes at least a chalcogen glass layer formed in an atmosphere of inert gas kept at 1.5.times.10.sup.-2 to 1.5.times.10.sup.-1 Torr. As chalcogen glass is preferably used Sb.sub.2 S.sub.3, As.sub.2 S.sub.3, As.sub.2 Se.sub.3 or Sb.sub.2 Se.sub.3. The chalcogen glass film may be a composite film consisting of plural component layers. This invention is very useful to reduce dark current in an image pickup tube and to prevent image inversion in the image pickup tube.
摘要翻译： 公开了一种包括透明基板的光电转换装置; 形成在所述基板上的透明导电膜; 由氢化非晶硅作为不可缺少的成分形成并沉积在所述透明导电膜上的光电导层; 以及形成在所述光电导层上的硫属玻璃膜，其中所述硫属玻璃膜至少包含在保持在1.5×10 -2至1.5×10 -1乇的惰性气体气氛中形成的至少一种硫族化合物玻璃层。 作为硫属玻璃，优选使用Sb2S3，As2S3，As2Se3或Sb2Se3。 硫属玻璃膜可以是由多个成分层构成的复合膜。 本发明对于降低图像拾取管中的暗电流并且防止图像拾取管中的图像反转非常有用。
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公开(公告)号：US4331506A
公开(公告)日：1982-05-25
申请号：US212213
申请日：1980-12-02
申请人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
发明人： Akira Sasano , Toshio Nakano , Ken Tsutsui , Chushiro Kusano , Tadaaki Hirai , Eiichi Maruyama
摘要： A method of manufacturing a target of an image pickup tube comprising the steps of: forming a plurality of groups of transparent conductive signal electrodes on a transparent insulating base plate; forming a first layer on at least a portion constituting an image area of the image pickup tube, said first layer being substantially insoluble in etching liquid used for etching an insulating layer to constitute an intermediate layer insulator in a double layered interconnection structure; forming, after formation of said first layer, an insulating layer to constitute said intermediate-layer insulator; removing a predetermined portion of said insulating layer, removing said first layer together with said insulating layer located thereon; forming bus bars; and forming a photoconductive layer on said plurality of groups of the transparent conductive signal electrodes.This invention provides an excellent method for mass production.
摘要翻译： 一种制造图像拾取管的目标的方法，包括以下步骤：在透明绝缘基板上形成多组透明导电信号电极; 在构成图像拾取管的图像区域的至少一部分上形成第一层，所述第一层基本上不溶于用于蚀刻绝缘层的蚀刻液，以构成双层互连结构中的中间层绝缘体; 在形成所述第一层之后形成构成所述中间层绝缘体的绝缘层; 去除所述绝缘层的预定部分，与位于其上的所述绝缘层一起去除所述第一层; 形成母线; 以及在所述多个透明导电信号电极组上形成光电导层。 本发明提供了一种很好的批量生产方法。
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公开(公告)号：US4227078A
公开(公告)日：1980-10-07
申请号：US918273
申请日：1978-06-22
申请人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
发明人： Hideaki Yamamoto , Haruo Matsumaru , Makoto Matsui , Toshihisa Tsukada , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H04N1/028 , G02B6/42 , G06K9/20 , H01L27/144 , H01L27/146 , H01L31/02 , H01L31/0232 , H04N1/031 , G02B5/14
CPC分类号： H04N1/0312 , G02B6/421 , G02B6/4249 , G06K9/2009 , H01L27/1446 , H04N1/0311 , H04N1/0315
摘要： A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.
摘要翻译： 一种光传感器，其中将片状形式的一束光纤设置在预定的基板内，光纤束从基板的第一表面延伸到第二表面，光敏元件阵列与 基板，使得至少一个透明绝缘层介于光电元件和光纤束之间，至少在基板的第一表面侧上的光纤束的端面和 向基板的第二表面开放的光纤束用作信息读取面。
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