Exhaust emission control device of internal combustion engine

    公开(公告)号:US06463734B1

    公开(公告)日:2002-10-15

    申请号:US09651653

    申请日:2000-08-30

    IPC分类号: F01N300

    摘要: An exhaust emission control device of an internal combustion engine, which purifies exhaust gas exhausted from the internal combustion engine, comprises: a catalyst device composed of a three way catalyst for purifying harmful substance in the exhaust gas when an exhaust air-fuel ratio is substantially stoichiometrical and an NOx catalyst having a function of absorbing NOx in the exhaust gas when the air-fuel ratio is closer to a lean air-fuel ratio than to the stoichiometrical air-fuel ratio, the catalyst device being provided in an exhaust passage of the internal combustion engine; catalyst deterioration determination means for determining deterioration state of the catalyst device, the deterioration resulting from at least temperature; and control means for deteriorating exhaust gas components flowing into the catalyst device much more than exhaust gas components flowing into the catalyst device when an air-fuel ratio of a mixture supplied to the internal combustion engine is substantially stoichiometrical, if the catalyst deterioration determination means determines that the catalyst device is in a predetermined deterioration state. The deterioration of an NOx absorbing function of the NOx catalyst results from at least the destabilization of absorbing material in the NOx catalyst, which is caused by the rise in the temperature. Thus, if the catalyst deterioration determination means determines that the catalyst device is in the predetermined deterioration state, the exhaust gas components flowing into the catalyst device are deteriorated much more than the exhaust gas components flowing into the catalyst device when the air-fuel ratio of the mixture supplied to the internal combustion engine is substantially stoichiometrical. Therefore, CO, H2, NOx, O2, THC and the like are supplied to the absorbing material to thereby stabilize the absorbing material as carbonate, nitrite or acid oxide. This prevents the heat deterioration. This extends a heat-resisting life of the catalyst device, and prevents the deterioration of an exhaust gas characteristic and the increase in cost.

    Wafer surface observing method and apparatus
    8.
    发明授权
    Wafer surface observing method and apparatus 有权
    晶圆表面观察方法及装置

    公开(公告)号:US08577119B2

    公开(公告)日:2013-11-05

    申请号:US11698987

    申请日:2007-01-29

    IPC分类号: G06K9/00 G01N21/00

    CPC分类号: G01N21/9501 G01N21/9503

    摘要: A wafer surface observing apparatus for inspecting a peripheral portion of an object has (A) a lens system and a CCD camera for taking images of the peripheral portion of the object, (B) storage for storing image data about the taken images, and (C) display for displaying the image data stored in the storage device. In particular, the present apparatus can have functions of rotating the object placed on a prealignment portion, recording images of one full outer periphery of an end portion of the object by the lens system and CCD camera into the location where the orientation flat portions or notched portions of the object are placed in position, accepting the images into the storage device, and displaying the images on a CRT.

    摘要翻译: 用于检查物体的周边部分的晶片表面观察装置具有(A)用于拍摄物体的周边部分的图像的透镜系统和CCD照相机,(B)用于存储关于拍摄图像的图像数据的存储器和( C)显示用于显示存储在存储装置中的图像数据。 具体地说,本装置具有使放置在预对准部上的物体旋转的功能,通过透镜系统和CCD照相机将物体的端部的一个完整外周的图像记录到定位平面部分或切口的位置 将物体的部分放置在适当位置,将图像接收到存储装置中,并将图像显示在CRT上。

    SEMICONDUCTOR DEVICE
    10.
    发明申请

    公开(公告)号:US20120228690A1

    公开(公告)日:2012-09-13

    申请号:US13471323

    申请日:2012-05-14

    IPC分类号: H01L27/06

    摘要: To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.