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40 条记录 (耗时 0.034 秒)

    Semiconductor device and electronic apparatus using semiconductor device
    2.
    发明授权
    Semiconductor device and electronic apparatus using semiconductor device 失效
    半导体器件和使用半导体器件的电子设备

    公开(公告)号：US5258649A

    公开(公告)日：1993-11-02

    申请号：US918137

    申请日：1992-07-23

    申请人： Akira Tanaka ,  Kazuji Yamada ,  Tadahiko Miyoshi ,  Kanji Otsuka

    发明人： Akira Tanaka ,  Kazuji Yamada ,  Tadahiko Miyoshi ,  Kanji Otsuka

    IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/433 ,  H01L23/498 ,  H05K3/32 ,  H01L23/02 ,  H01L23/48

    CPC分类号： H05K3/325 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49833 ,  H01L2224/16245 ,  H01L2224/73253 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/1815

    摘要： A silicon chip is mounted on a portion a heat dissipation body, and a carrier film is inserted into a resin composition material. Each of input/output electrode portions of the silicon chip is connected electrically to each of lead wires of the carrier film. The electrical connection between the silicon chip and a circuit substrate is carried out by the carrier film. Another portion of the heat dissipation body is exposed on a surface of the resin composition material. A fixing means for fixing the resin composition material is formed integrally to the resin composition material or to the heat dissipation body. The resin composition material is fixed to a circuit substrate through the fixing means. The mechanical fixing between the resin composition material and the circuit substrate is carried out by the fixing means, which is separate from the carrier film. A heat dissipation fin may be provided on the heat dissipation body.

    摘要翻译： 将硅芯片安装在散热体的一部分上，并将载体膜插入到树脂组合物材料中。 硅芯片的每个输入/输出电极部分电连接到载体膜的每个引线上。 硅芯片和电路基板之间的电连接由载体膜进行。 散热体的另一部分露出在树脂组合物材料的表面上。 用于固定树脂组合物材料的固定装置与树脂组合物材料或散热体一体地形成。 树脂组合物材料通过固定装置固定到电路基板。 树脂组合物材料和电路基板之间的机械固定由与载体膜分开的固定装置进行。 散热片可以设置在散热体上。

    Oxygen sensor ceramic and process for preparing the same
    6.
    发明授权
    Oxygen sensor ceramic and process for preparing the same 失效
    氧传感器陶瓷及其制备方法

    公开(公告)号：US4266979A

    公开(公告)日：1981-05-12

    申请号：US080469

    申请日：1979-10-01

    申请人： Tadahiko Miyoshi ,  Takeo Yamazaki

    发明人： Tadahiko Miyoshi ,  Takeo Yamazaki

    IPC分类号： C04B35/48 ,  C04B35/486 ,  G01N27/12 ,  G01N27/407 ,  G01N27/409 ,  H01M8/12

    CPC分类号： G01N27/4073 ,  C04B35/486 ,  H01M8/1253 ,  Y02E60/525 ,  Y02P70/56

    摘要： Oxygen sensor ceramic of solid electrolyte of zirconia-yttria system comprises aggregates of cubic zirconia grains having an average grain size of 2-10 .mu.m and monoclinic zirconia grains having an average grain size of 0.2-1 .mu.m, the appregates of the cubic zirconia grains being in contact with one another, and the monoclinic zirconia grains being distributed as aggregates in clearances among the aggregates of the cubic zirconia grains, and has a high thermal shock resistance, a high mechanical strength and a resistivity equal to that of the ceramic consisting only of cubic zirconia grains. The oxygen sensor ceramic is prepared by mixing zirconia powder having a grain size of 0.1-0.5 .mu.m with 4-8% by mole of yttria powder having an average grain size of 0.5-5 .mu.m, on the basis of total mixture, and molding and firing the mixture at 1,400.degree.-1,550.degree. C.

    摘要翻译： 氧化锆 - 氧化钇系统的固体电解质的氧传感器陶瓷包括平均粒径为2-10μm的立方氧化锆颗粒和平均粒径为0.2-1μm的单斜晶氧化锆颗粒的聚集体，立方氧化锆 颗粒彼此接触，并且单斜氧化锆颗粒作为立方氧化锆颗粒的聚集体之间的间隙分布作为聚集体，并且具有高耐热冲击性，高机械强度和等于陶瓷组成的电阻率 只有立方氧化锆颗粒。 氧传感器陶瓷通过将粒径为0.1-0.5μm的氧化锆粉末与平均粒径为0.5-5μm的4-8摩尔％氧化钇粉末以总混合物为基础来制备，以及 在1400°-150℃下对混合物进行成型和烧成

    Nuclear fusion reactor
    9.
    发明授权
    Nuclear fusion reactor 失效
    核聚变反应堆

    公开(公告)号：US5182075A

    公开(公告)日：1993-01-26

    申请号：US523403

    申请日：1990-05-15

    申请人： Yoshitaka Gotoh ,  Shigeru Kikuchi ,  Tetsuo Nakazawa ,  Tadahiko Miyoshi ,  Tetsuo Oyama ,  Yoshihiro Ozawa ,  Shin-ichi Itoh

    发明人： Yoshitaka Gotoh ,  Shigeru Kikuchi ,  Tetsuo Nakazawa ,  Tadahiko Miyoshi ,  Tetsuo Oyama ,  Yoshihiro Ozawa ,  Shin-ichi Itoh

    IPC分类号： G21B1/05 ,  G21B1/11 ,  G21B1/13 ,  G21B1/17

    CPC分类号： G21B1/13 ,  Y02E30/128

    摘要： A structure of a nuclear fusion reactor having a vacuum vessel in which hydrogen isotope plasma is enclosed and a confining magnetic field generating coil for confining said plasma at a predetermined position in said vacuum vessel. It comprises a low tritium-permeable layer having lower tritium-permeability than that of a cooling metal base for forming a refrigerant passage for cooling the vacuum vessel on at least the surface adjacent to said plasma enclosed and a heat resistant and insulating fire member of the level higher than that of said cooling metal base for thermally shielding said low tritium-permeable layer from said plasma or corpuscular rays is formed on the low tritium-permeable layer. The similar processings are applied to the cooling metal base for forming the refrigerant passage for cooling a divertor disposed in the vacuum vessel and for neutralizing ionized corpuscles so as to exhaust them.

    摘要翻译： 具有封入有氢同位素等离子体的真空容器的核聚变反应堆的结构和用于将所述等离子体限制在所述真空容器内的预定位置的约束磁场产生线圈。 它包括具有比冷却金属基底低的氚渗透性的低氚渗透层，用于在至少与所述等离子体封闭的邻近的表面上形成用于冷却真空容器的制冷剂通道和耐热和绝缘的防火构件 高于用于将所述低氚渗透层与所述等离子体或红细胞光线进行热屏蔽的所述冷却金属基底的高度，形成在低氚渗透层上。 类似的处理被应用于用于形成用于冷却设置在真空容器中的偏滤器的制冷剂通道的冷却金属基底，并且用于中和电离的小体以排出它们。