摘要:
In a photographing apparatus such as a single lens reflex camera, metering photoelectric conversion elements are provided in the optical path of an imaging optical system or a finder optical system and the line width of the pattern forming the elements is set to a width undiscernable by the human eye. Thus, with such metering photoelectric conversion elements, no irregularity of the quantity of amount is caused in the image observed through the finder or the image photographed.
摘要:
In a vapor deposition film forming apparatus having a plurality of reactors each having a substrate and an electrode oppositely arranged in a vacuum chamber and means for applying a voltage thereacross to react or decompose reaction gas introduced into the vacuum chamber, the reactors are arranged on a circumference of a circle and coaxial cables having substantially equal impedance radially extend to the reactors from a matching circuit located at the center of the circle.
摘要:
An improved apparatus for the formation of a functional deposited film using a microwave plasma chemical vapor deposition process characterized in that a microwave transmissible dielectric material is used for the microwave introducing window, and the window has a structure wherein the dielectric material is divided into blocks of the same or different dielectric materials having a specific inductive capacity of more than 1.0. In this way it is possible to adjust not only the resonant frequency characteristics but also the electromagnetic resonant mode of the window to resonate with the microwave oscillation frequency so as to enhance microwave transmission.
摘要:
An improvement in a vacuum plasma treating apparatus having a reaction chamber partly formed of electric insulating material subject to corrosion by a fluorine or chlorine containing gas plasma, which improvement being that the electric insulating material subject to corrosion comprises a sintered ceramic material containing alumina as a primary ingredient.
摘要:
An improved apparatus for the formation of a functional deposited film using microwave plasma chemical vapor deposition process is characterized in that the relative setting angle between waveguides confronting each other is set to be 60.degree. or 240.degree. in the counterclockwise direction, which makes it possible to stably introduce the microwave energy into the vacuum chamber simultaneously from the plural microwave power sources without any interference among them.
摘要:
A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for use for conveyance movable between the vacuum containers exclusively for use for processing. The vacuum containers are provided with opening-closing gates which can be connected to each other. The substrate to be processed is transferably movable between the vacuum containers exclusively for use for processing and the vacuum container exclusively for use for conveyance.
摘要:
A treatment device utilizing plasma performs treatment by exposing a material to be treated to a plasma atmosphere formed by converting at least either one of fluorine and a fluorine compound into gas plasma, and said device comprises a structural member for forming the space for maintaining said plasma atmosphere, which is constituted of a stainless steel structure member coated on its surface exposed to said plasma atmosphere with a metal film which can difficultly form a fluoride.
摘要:
Provided is a suitable cleaning method of a porous semiconductor substrate without collapse of the porous structure due to cavitation or resonance. In a cleaning method of a porous surface of a semiconductor substrate having the porous structure at least in the surface, cleaning for removing dust particles adhering to the porous surface of the substrate takes place with pure water on which a high-frequency wave with a frequency in the range of from 600 kHz to 2 MHz is superimposed.
摘要:
There is disclosed layer forming apparatus for forming a deposition layer on a substrate by means of electric discharge, comprising a supporting electrode, and a cassette of a structure capable of accommodating therein a substrate for layer formation and being inserted into said supporting electrode and electrically connected therewith to cause electric discharge in said cassette.