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公开(公告)号：US20060220122A1
公开(公告)日：2006-10-05
申请号：US11373488
申请日：2006-03-13
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/42372 , H01L29/4238 , H01L29/66712
摘要： An n type impurity region is provided below a gate electrode. By setting a gate length to be less than a depth of a channel region, a side surface of the channel region and a side surface of the n type impurity region adjacent to the channel region form a substantially perpendicular junction surface. Thus, since a depletion layer widens uniformly in a depth direction of a substrate, it is possible to secure a predetermined breakdown voltage. Furthermore, since an interval between the channel regions, above which the gate electrode is disposed, is uniform from its surface to its bottom, it is possible to increase an impurity concentration of the n type impurity region, resulting in an achievement of a low on-resistance.
摘要翻译： 在栅电极的下方设置有n型杂质区。 通过将栅极长度设置为小于沟道区的深度，沟道区的侧表面和与沟道区相邻的n型杂质区的侧表面形成基本上垂直的接合表面。 因此，由于耗尽层在衬底的深度方向上均匀地变宽，因此可以确保预定的击穿电压。 此外，由于栅极电极上方的沟道区域之间的间隔从表面到底部均匀，所以可以增加n型杂质区域的杂质浓度，导致实现低的导通 -抵抗性。
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公开(公告)号：US08133788B2
公开(公告)日：2012-03-13
申请号：US12567050
申请日：2009-09-25
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/42372 , H01L29/4238 , H01L29/66712
摘要： An n type impurity region is provided below a gate electrode. By setting a gate length to be less than a depth of a channel region, a side surface of the channel region and a side surface of the n type impurity region adjacent to the channel region form a substantially perpendicular junction surface. Thus, since a depletion layer widens uniformly in a depth direction of a substrate, it is possible to secure a predetermined breakdown voltage. Furthermore, since an interval between the channel regions, above which the gate electrode is disposed, is uniform from its surface to its bottom, it is possible to increase an impurity concentration of the n type impurity region, resulting in an achievement of a low on-resistance.
摘要翻译： 在栅电极的下方设置有n型杂质区。 通过将栅极长度设置为小于沟道区的深度，沟道区的侧表面和与沟道区相邻的n型杂质区的侧表面形成基本上垂直的接合表面。 因此，由于耗尽层在衬底的深度方向上均匀地变宽，因此可以确保预定的击穿电压。 此外，由于栅极电极上方的沟道区域之间的间隔从表面到底部均匀，所以可以增加n型杂质区域的杂质浓度，导致实现低的导通 -抵抗性。
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公开(公告)号：US20100015772A1
公开(公告)日：2010-01-21
申请号：US12567050
申请日：2009-09-25
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/42372 , H01L29/4238 , H01L29/66712
摘要： An n type impurity region is provided below a gate electrode. By setting a gate length to be less than a depth of a channel region, a side surface of the channel region and a side surface of the n type impurity region adjacent to the channel region form a substantially perpendicular junction surface. Thus, since a depletion layer widens uniformly in a depth direction of a substrate, it is possible to secure a predetermined breakdown voltage. Furthermore, since an interval between the channel regions, above which the gate electrode is disposed, is uniform from its surface to its bottom, it is possible to increase an impurity concentration of the n type impurity region, resulting in an achievement of a low on-resistance.
摘要翻译： 在栅电极的下方设置有n型杂质区。 通过将栅极长度设置为小于沟道区的深度，沟道区的侧表面和与沟道区相邻的n型杂质区的侧表面形成基本上垂直的接合表面。 因此，由于耗尽层在衬底的深度方向上均匀地变宽，因此可以确保预定的击穿电压。 此外，由于栅极电极上方的沟道区域之间的间隔从表面到底部均匀，所以可以增加n型杂质区域的杂质浓度，导致实现低的导通 -抵抗性。
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4.发明申请公开(公告)号：US20070072352A1
公开(公告)日：2007-03-29
申请号：US11519208
申请日：2006-09-12
IPC分类号： H01L21/337 , H01L21/8242 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/41766 , H01L29/42372 , H01L29/4238 , H01L29/66712 , H01L29/66727
摘要： A separation hole is provided in the center of the gate electrode. Accordingly, it is possible to suppress a drastic increase in feedback capacitance Crss in the case where drain-source voltage VDS is decreased and the width of the depletion layer is narrowed. Thus, high-frequency switching characteristics are improved. Moreover, n type impurities are implanted from the separation hole to form an n type impurity region between channel regions. Since a resistance in a portion below the gate electrode can be reduced, an on-resistance can be reduced. The n type impurity region can be formed in a self-aligning manner.
摘要翻译： 在栅电极的中心设置有分离孔。 因此，在漏极 - 源极电压VDS降低并且耗尽层的宽度变窄的情况下，可以抑制反馈电容Crss急剧增加。 因此，提高了高频开关特性。 此外，从分离孔注入n型杂质，在沟道区域之间形成n型杂质区。 由于可以减小栅电极下方的电阻，所以可以降低导通电阻。 可以以自对准的方式形成n型杂质区域。
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公开(公告)号：US20060180836A1
公开(公告)日：2006-08-17
申请号：US11355196
申请日：2006-02-16
申请人： Hiroyasu Ishida , Makoto Oikawa , Kikuo Okada , Shouji Miyahara , Naohiro Ochiai , Kazunari Kushiyama
发明人： Hiroyasu Ishida , Makoto Oikawa , Kikuo Okada , Shouji Miyahara , Naohiro Ochiai , Kazunari Kushiyama
IPC分类号： H01L21/336 , H01L29/76 , H01L29/94
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0869 , H01L29/1095 , H01L29/66712 , H01L29/66734 , H01L29/7813
摘要： In the present invention, in a pattern in which gate electrodes are provided in a stripe shape and source regions are provided in a ladder shape, body regions are provided in a stripe shape parallel to the gate electrodes. A first body region is exposed to a surface of a channel layer between first source regions adjacent to the gate electrode, and a second body region is provided below a second source region which connects the first source regions to each other. Thus, avalanche resistance can be improved. Moreover, since a mask for forming the body region is no longer required, there is a margin in accuracy of alignment.
摘要翻译： 在本发明中，在栅电极呈条状而源极区设置为梯状的图案中，以与栅电极平行的条状形成体区。 第一体区域暴露于与栅电极相邻的第一源极区域之间的沟道层的表面，并且第二体区域设置在将第一源极区域彼此连接的第二源极区域的下方。 因此，可以提高雪崩阻力。 此外，由于不再需要用于形成身体区域的掩模，所以对准精度有余量。
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公开(公告)号：US20070034943A1
公开(公告)日：2007-02-15
申请号：US11496723
申请日：2006-08-01
申请人： Kazunari Kushiyama , Tetsuya Okada , Makoto Oikawa
发明人： Kazunari Kushiyama , Tetsuya Okada , Makoto Oikawa
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L29/7811 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/66734 , H01L29/7397 , H01L29/7808 , H01L29/7813 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05187 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05556 , H01L2224/05624 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/49107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/13055 , H01L2924/13091 , H01L2924/19043 , H01L2924/00014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01074 , H01L2924/00
摘要： Two metal electrode layers are provided. A first electrode layer is patterned with a minute separation distance according to an element region as in the case of the conventional case. Meanwhile, it suffices that a second electrode layer be in contact with the first electrode layer. Thus, no problems arise even if the separation distance is elongated. Specifically, the second electrode layer can be set to have a desired thickness. Moreover, by disposing a nitride film on the first electrode layer below a wire bonding region, even when volume expansion is caused by an Au/Al eutectic layer, transmission of stress to the element region can be prevented.
摘要翻译： 提供两个金属电极层。 如常规情况那样，第一电极层根据元件区域以微小的间隔距离进行构图。 同时，第二电极层与第一电极层接触就足够了。 因此，即使分离距离延长也不会出现问题。 具体地，第二电极层可以被设定为具有期望的厚度。 此外，通过在引线接合区域的下方的第一电极层上设置氮化物膜，即使由Au / Al共晶层引起体积膨胀，也能够防止向元件区域施加应力。
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公开(公告)号：US07417295B2
公开(公告)日：2008-08-26
申请号：US11496723
申请日：2006-08-01
申请人： Kazunari Kushiyama , Tetsuya Okada , Makoto Oikawa
发明人： Kazunari Kushiyama , Tetsuya Okada , Makoto Oikawa
IPC分类号： H01L21/60
CPC分类号： H01L29/7811 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/66734 , H01L29/7397 , H01L29/7808 , H01L29/7813 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05166 , H01L2224/05187 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05556 , H01L2224/05624 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/49107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/13055 , H01L2924/13091 , H01L2924/19043 , H01L2924/00014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01074 , H01L2924/00
摘要： Two metal electrode layers are provided. A first electrode layer is patterned with a minute separation distance according to an element region as in the case of the conventional case. Meanwhile, it suffices that a second electrode layer be in contact with the first electrode layer. Thus, no problems arise even if the separation distance is elongated. Specifically, the second electrode layer can be set to have a desired thickness. Moreover, by disposing a nitride film on the first electrode layer below a wire bonding region, even when volume expansion is caused by an Au/Al eutectic layer, transmission of stress to the element region can be prevented.
摘要翻译： 提供两个金属电极层。 如常规情况那样，第一电极层根据元件区域以微小的间隔距离进行构图。 同时，第二电极层与第一电极层接触就足够了。 因此，即使分离距离延长也不会出现问题。 具体地，第二电极层可以被设定为具有期望的厚度。 此外，通过在引线接合区域的下方的第一电极层上设置氮化物膜，即使由Au / Al共晶层引起体积膨胀，也能够防止向元件区域施加应力。
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公开(公告)号：US08665922B2
公开(公告)日：2014-03-04
申请号：US12607754
申请日：2009-10-28
申请人： Yoshio Fujimura , Hiroshi Iizuka , Kazunari Kushiyama , Koudai Nakamura , Yuusuke Nishizaki , Kenpei En
发明人： Yoshio Fujimura , Hiroshi Iizuka , Kazunari Kushiyama , Koudai Nakamura , Yuusuke Nishizaki , Kenpei En
IPC分类号： H01S3/00
CPC分类号： H05B33/0815 , H01S5/042 , H05B33/0818 , H05B33/0824 , H05B33/0848 , Y02B20/347
摘要： A driver circuit is provided which comprises a series-connected unit having a light-emitting element and a current limiting inductor directly connected to the light-emitting element, a regenerative diode which is connected in parallel to the series-connected unit and which regenerates energy stored in the current limiting inductor, a transistor which controls a current flowing through the light-emitting element and the current limiting inductor, and a controller which controls an operation of the transistor, wherein the controller controls the transistor according to a voltage value of a power supply applied to the light-emitting element.
摘要翻译： 提供了一种驱动器电路，其包括具有发光元件的串联单元和直接连接到发光元件的限流电感器，再生二极管并联连接到串联单元并且再生能量 存储在限流电感器中，控制流过发光元件和限流电感器的电流的晶体管和控制晶体管的操作的控制器，其中控制器根据电压值控制晶体管 施加到发光元件的电源。
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公开(公告)号：US20100111123A1
公开(公告)日：2010-05-06
申请号：US12607754
申请日：2009-10-28
申请人： Yoshio Fujimura , Hiroshi Iizuka , Kazunari Kushiyama , Koudai Nakamura , Yuusuke Nishizaki , Kenpei En
发明人： Yoshio Fujimura , Hiroshi Iizuka , Kazunari Kushiyama , Koudai Nakamura , Yuusuke Nishizaki , Kenpei En
CPC分类号： H05B33/0815 , H01S5/042 , H05B33/0818 , H05B33/0824 , H05B33/0848 , Y02B20/347
摘要： A driver circuit is provided which comprises a series-connected unit having a light-emitting element and a current limiting inductor directly connected to the light-emitting element, a regenerative diode which is connected in parallel to the series-connected unit and which regenerates energy stored in the current limiting inductor, a transistor which controls a current flowing through the light-emitting element and the current limiting inductor, and a controller which controls an operation of the transistor, wherein the controller controls the transistor according to a voltage value of a power supply applied to the light-emitting element.
摘要翻译： 提供了一种驱动器电路，其包括具有发光元件的串联单元和直接连接到发光元件的限流电感器，再生二极管并联连接到串联单元并且再生能量 存储在限流电感器中，控制流过发光元件和限流电感器的电流的晶体管和控制晶体管的操作的控制器，其中控制器根据电压值控制晶体管 施加到发光元件的电源。
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