公开(公告)号：US6144060A

公开(公告)日：2000-11-07

申请号：US127353

申请日：1998-07-31

申请人： In-seon Park ,  Yeong-kwan Kim ,  Sang-in Lee ,  Byung-hee Kim ,  Sang-min Lee ,  Chang-soo Park

发明人： In-seon Park ,  Yeong-kwan Kim ,  Sang-in Lee ,  Byung-hee Kim ,  Sang-min Lee ,  Chang-soo Park

IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/285 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L29/72

CPC分类号： H01L28/75 ,  H01L21/28568 ,  H01L27/10852 ,  H01L28/55

摘要： Integrated circuit devices include a first dielectric layer, an electrically insulating layer on the first dielectric layer and an an aluminum oxide buffer layer formed by atomic layer deposition (ALD) and stabilized by heat treatment at a temperature of less than about 600.degree. C., between the first dielectric layer and the electrically insulating layer. The first dielectric layer may comprise a high dielectric material such as a ferroelectric or paraelectric material. The electrically insulating layer may also comprise a material selected from the group consisting of silicon dioxide, borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG). To provide a preferred integrated circuit capacitor, a substrate may be provided and an interlayer dielectric layer may be provided on the substrate. Here, a metal layer may also be provided between the interlayer dielectric layer and the first dielectric layer. The metal layer may comprise a material selected from the group consisting of Pt, Ru, Ir, and Pd.

摘要翻译： 集成电路器件包括第一电介质层，第一电介质层上的电绝缘层和通过原子层沉积（ALD）形成并通过在小于约600℃的温度下进行热处理而稳定的氧化铝缓冲层， 在第一介电层和电绝缘层之间。 第一电介质层可以包括高电介质材料，例如铁电或顺电材料。 电绝缘层还可以包括选自二氧化硅，硼磷硅酸盐玻璃（BPSG）和磷硅玻璃（PSG）的材料。 为了提供优选的集成电路电容器，可以提供衬底，并且可以在衬底上提供层间电介质层。 这里，还可以在层间介电层和第一介电层之间设置金属层。 金属层可以包括选自Pt，Ru，Ir和Pd的材料。

公开(公告)号：US06335240B1

公开(公告)日：2002-01-01

申请号：US09226006

申请日：1999-01-06

申请人： Yeong-kwan Kim ,  In-seon Park ,  Sang-min Lee ,  Chang-soo Park

发明人： Yeong-kwan Kim ,  In-seon Park ,  Sang-min Lee ,  Chang-soo Park

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/3162

摘要： A capacitor having high capacitance using a silicon-containing conductive layer as a storage node, and a method for forming the same, are provided. The capacitor includes a storage node, an amorphous Al2O3 dielectric layer, and a plate node. The amorphous Al2O3 layer is formed by a method in which reactive vapor phase materials are supplied on the storage node, for example, an atomic layered deposition method. Also, the storage node is processed by rapid thermal nitridation before forming the amorphous Al2O3 layer. The amorphous Al2O3 layer is densified by annealing at approximately 850° C. after forming a plate node, to thereby realize the equivalent thickness of an oxide layer which approximates a theoretical value of 30 Å.

公开(公告)号：US06489214B2

公开(公告)日：2002-12-03

申请号：US09962327

申请日：2001-09-26

申请人： Yeong-kwan Kim ,  In-seon Park ,  Sang-min Lee ,  Chang-soo Park

发明人： Yeong-kwan Kim ,  In-seon Park ,  Sang-min Lee ,  Chang-soo Park

IPC分类号： H01L2120

CPC分类号： H01L28/40 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/3162

摘要： A capacitor having high capacitance using a silicon-containing conductive layer as a storage node, and a method for forming the same, are provided. The capacitor includes a storage node, an amorphous Al2O3 dielectric layer, and a plate node. The amorphous Al2O3 layer is formed by a method in which reactive vapor phase materials are supplied on the storage node, for example, an atomic layered deposition method. Also, the storage node is processed by rapid thermal nitridation before forming the amorphous Al2O3 layer. The amorphous Al2O3 layer is densified by annealing at approximately 850° C. after forming a plate node, to thereby realize the equivalent thickness of an oxide layer which approximates a theoretical value of 30 Å.

摘要翻译： 提供一种使用含硅导电层作为存储节点具有高电容的电容器及其形成方法。 电容器包括存储节点，非晶Al 2 O 3介电层和板状节点。 通过在存储节点上提供反应性气相材料的方法，例如原子层状沉积法，形成无定形Al 2 O 3层。 此外，在形成无定形Al 2 O 3层之前，通过快速热氮化处理存储节点。 通过在形成板状节点之后在约850℃下进行退火来致密化非晶Al 2 O 3层，从而实现近似理论值的氧化物层的等效厚度。

公开(公告)号：US06270572B1

公开(公告)日：2001-08-07

申请号：US09371709

申请日：1999-08-09

申请人： Yeong-kwan Kim ,  Sang-in Lee ,  Chang-soo Park ,  Sang-min Lee

发明人： Yeong-kwan Kim ,  Sang-in Lee ,  Chang-soo Park ,  Sang-min Lee

IPC分类号： C30B2502

CPC分类号： H05B33/04 ,  C23C16/44 ,  C23C16/45527 ,  C23C16/45561 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/31604 ,  H01L21/31691

摘要： A thin film manufacturing method is provided. The method includes the step of chemically adsorbing a first reactant on a substrate by injecting the first reactant into a chamber in which the substrate is loaded. Physisorbed first reactant on the chemically adsorbed first reactant is removed by purging or pumping the chamber. After the first reactant is densely chemically adsorbed on the substrate by re-injecting the first reactant into the chamber, the physisorbed first reactant on the dense chemisorbed first reactant is removed by purging or pumping the chamber. A second reactant is chemically adsorbed onto the surface of the substrate by injecting the second reactant into the chamber. Physisorbed second reactant on the chemisorbed first reactant and the second reactant is removed by purging or pumping the chamber. A solid thin film is formed by chemical exchange through densely adsorbing the second reactant onto the substrate by re-injecting the second reactant into the chamber. According to the present invention, it is possible to obtain a precise stoichiometric thin film having a high film density, since the first reactant and the second reactant are densely adsorbed and the impurities are substantially removed by pumping or purging

摘要翻译： 提供薄膜制造方法。 该方法包括通过将第一反应物注入到其中负载衬底的室中来在基底上化学吸附第一反应物的步骤。 化学吸附的第一反应物上的物理吸附的第一反应物通过清洗或泵送室来除去。 在第一反应物通过将第一反应物重新注入室中密集地化学吸附在基材上之后，通过清洗或泵送室来去除致密化学吸附的第一反应物上的物理吸附的第一反应物。 通过将第二反应物注入到室中，将第二反应物化学吸附到基底的表面上。 化学吸附的第一反应物和第二反应物上的物理吸附的第二反应物通过清洗或泵送室来除去。 通过将第二反应物重新注入到室中，将第二反应物密集地吸附到基底上，通过化学交换形成固体薄膜。 根据本发明，可以获得具有高膜密度的精确化学计量薄膜，因为第一反应物和第二反应物被密集吸附并且通过泵送或清除基本上除去杂质

公开(公告)号：US06207487B1

公开(公告)日：2001-03-27

申请号：US09415830

申请日：1999-10-12

申请人： Yeong-kwan Kim ,  Sang-in Lee ,  Chang-soo Park ,  Young-sun Kim

发明人： Yeong-kwan Kim ,  Sang-in Lee ,  Chang-soo Park ,  Young-sun Kim

IPC分类号： H01L218244

CPC分类号： H01L28/40 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/31691 ,  H01L28/55

摘要： The present invention discloses a method for forming a dielectric film having improved leakage current characteristics in a capacitor. A lower electrode having a surface and a rounded protruding portion is formed on a semiconductor substrate. The surface and the protruding portion define at least one concave area. A chemisorption layer is then formed on the surface and the rounded protruding portion by supplying a first reactant. Also, a physisorption layer is formed on the chemisorption layer from the first reactant. Next, a portion of the physisorption layer is removed and a portion of the physisorption layer is left on the concave area. Subsequently, the chemisorption layer and the portion of the physisorption layer on the concave area react with a second reactant to form a dielectric film on the surface of the lower electrode. The thickness of said dielectric film is greater on the concave area than on the protruding portion, thereby reducing leakage current.

摘要翻译： 本发明公开了一种在电容器中形成具有改善的漏电流特性的电介质膜的方法。 在半导体衬底上形成具有表面和圆形突出部分的下电极。 表面和突出部分限定至少一个凹入区域。 然后通过提供第一反应物在表面和圆形突出部分上形成化学吸附层。 此外，在第一反应物的化学吸附层上形成物理吸附层。 接下来，去除一部分物理吸附层，并将一部分物理吸附层留在凹面上。 随后，化学吸收层和凹面上的物理吸附层的部分与第二反应物反应，以在下电极的表面上形成电介质膜。 所述电介质膜的厚度在凹区域上大于突出部分的厚度，从而减少漏电流。

公开(公告)号：US20050087828A1

公开(公告)日：2005-04-28

申请号：US10990429

申请日：2004-11-18

申请人： Yeong-kwan Kim ,  Dong-chan Kim ,  Seung-hwan Lee ,  Young-wook Park

发明人： Yeong-kwan Kim ,  Dong-chan Kim ,  Seung-hwan Lee ,  Young-wook Park

IPC分类号： H01L21/20 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/76 ,  H01L31/115

CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/823475 ,  H01L27/10873 ,  H01L27/10885

摘要： A semiconductor device having a thin film formed by atomic layer deposition and a method for fabricating the same, wherein the semiconductor device includes a liner layer formed on an internal wall and bottom of a trench, gate spacers formed on the sidewalls of gate stack patterns functioning as a gate line, a first bubble prevention layer formed on the gate spacers and the gate stack patterns, bit line spacers formed on the sidewalls of bit line stack patterns functioning as a bit line, and a second bubble prevention layer formed on the bit line spacers and the gate stack patterns and at least one of the above is formed of a multi-layer of a silicon nitride layer and a silicon oxide layer, or a multi-layer of a silicon oxide layer and a silicon nitride layer, thereby filling the trench, gate stack patterns, or bit line stack patterns without a void.

摘要翻译： 具有通过原子层沉积形成的薄膜的半导体器件及其制造方法，其中所述半导体器件包括形成在沟槽的内壁和底部上的衬垫层，形成在栅堆叠图案功能的侧壁上的栅极间隔 作为栅极线，形成在栅极间隔物和栅极堆叠图案上的第一防止气泡层，形成在用作位线的位线堆叠图案的侧壁上的位线间隔物和形成在位线上的第二防止气泡层 间隔物和栅极堆叠图案，并且上述中的至少一个由氮化硅层和氧化硅层的多层或氧化硅层和氮化硅层的多层形成，从而填充 沟槽，栅极堆叠图案或无空隙的位线堆叠图案。

公开(公告)号：US06576053B1

公开(公告)日：2003-06-10

申请号：US09679559

申请日：2000-10-06

申请人： Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

发明人： Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

IPC分类号： C30B2504

CPC分类号： H01L21/31691 ,  C30B25/02 ,  C30B29/20 ,  H01L21/316

摘要： In a method of forming a thin film using an atomic layer deposition (ALD) method, a thin film is formed on a substrate in cycles. Each cycle includes injecting a first reactant including an atom that forms the thin film and a ligand into a reaction chamber that includes the substrate, purging the first reactant, injecting a second reactant into the reaction chamber, and purging the second reactant. The thin film is formed by a chemical reaction between the atom that forms the thin film and a second reactant whose binding energy with respect to the atom that forms the thin film is larger than the binding energy of the ligand with respect to the atom that forms the thin film and the generation of by-products is prevented. The generation of a hydroxide by-product in the thin film is suppressed by using a material that does not include a hydroxide as the second reactant, purging the second reactant, and reacting the second reactant with a third reactant that includes hydroxide. After purging the second reactant, the third reactant for removing impurities and improving the stoichiometry of the thin film is injected and purged. In this way, it is possible to obtain a thin film that does not include impurities and whose stoichiometry is excellent.

摘要翻译： 在使用原子层沉积（ALD）法形成薄膜的方法中，在基板上循环形成薄膜。 每个循环包括将包括形成薄膜的原子和配体的第一反应物注入到包括基板的反应室中，清洗第一反应物，将第二反应物注入反应室，以及清除第二反应物。 薄膜由形成薄膜的原子与第二反应物之间的化学反应形成，第二反应物的结合能相对于形成薄膜的原子的结合能大于配体相对于形成的原子的结合能 防止了薄膜和副产物的产生。 通过使用不包含氢氧化物作为第二反应物的材料，吹扫第二反应物，并使第二反应物与包含氢氧化物的第三反应物反应，可以抑制薄膜中氢氧化物副产物的产生。 在清洗第二反应物之后，注入和清除用于除去杂质的第三反应物和改善薄膜的化学计量。 以这种方式，可以获得不含杂质的化学计量优异的薄膜。

公开(公告)号：US06570253B1

公开(公告)日：2003-05-27

申请号：US09686623

申请日：2000-10-12

申请人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

发明人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

IPC分类号： H01G904

CPC分类号： H01L28/40 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31616

摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.

摘要翻译： 用于薄膜结构的多层膜，使用该多层膜的电容器以及制造多层膜和电容器的方法，所述多层膜包括在下层材料层和上层之间的组成过渡层 分别由相互作用参数彼此不同的不同元素形成的材料层，组成过渡层包含下部和上部材料层的两个元素，组成过渡层的浓度从组成过渡层的部分逐渐变化， 下部材料层到组合物过渡层的与上部材料层接触的部分，使得上部材料层的元素的浓度在与上部材料层相邻的部分中相对较大，每个下部和上部材料 层由铝，硅，锆，铈的氧化物或氮化物材料形成 钛，钛，钇，钽或铌。

公开(公告)号：US07544607B2

公开(公告)日：2009-06-09

申请号：US10990429

申请日：2004-11-18

申请人： Yeong-kwan Kim ,  Dong-chan Kim ,  Seung-hwan Lee ,  Young-wook Park

发明人： Yeong-kwan Kim ,  Dong-chan Kim ,  Seung-hwan Lee ,  Young-wook Park

IPC分类号： H01L21/4763 ,  H01L29/00 ,  H01L23/58

CPC分类号： H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76837 ,  H01L21/823475 ,  H01L27/10873 ,  H01L27/10885

摘要： A semiconductor device having a thin film formed by atomic layer deposition and a method for fabricating the same, wherein the semiconductor device includes a liner layer formed on an internal wall and bottom of a trench, gate spacers formed on the sidewalls of gate stack patterns functioning as a gate line, a first bubble prevention layer formed on the gate spacers and the gate stack patterns, bit line spacers formed on the sidewalls of bit line stack patterns functioning as a bit line, and a second bubble prevention layer formed on the bit line spacers and the gate stack patterns and at least one of the above is formed of a multi-layer of a silicon nitride layer and a silicon oxide layer, or a multi-layer of a silicon oxide layer and a silicon nitride layer, thereby filling the trench, gate stack patterns, or bit line stack patterns without a void.

公开(公告)号：US07052918B2

公开(公告)日：2006-05-30

申请号：US10410341

申请日：2003-04-10

申请人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

发明人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

IPC分类号： H01L21/8242

CPC分类号： H01L28/40 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31616

摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.