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公开(公告)号：US20130181355A1
公开(公告)日：2013-07-18
申请号：US13471229
申请日：2012-05-14
申请人： Yi Heng Tsai , Kuei-Sung Chang , Hung-Chia Tsai
发明人： Yi Heng Tsai , Kuei-Sung Chang , Hung-Chia Tsai
IPC分类号： H01L23/48 , H01L21/762
CPC分类号： B81B7/007 , B81C1/0023 , B81C1/00238 , B81C1/00301 , B81C2203/0792
摘要： An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.
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公开(公告)号：US09085456B2
公开(公告)日：2015-07-21
申请号：US13471229
申请日：2012-05-14
申请人： Yi Heng Tsai , Kuei-Sung Chang , Hung-Chia Tsai
发明人： Yi Heng Tsai , Kuei-Sung Chang , Hung-Chia Tsai
CPC分类号： B81B7/007 , B81C1/0023 , B81C1/00238 , B81C1/00301 , B81C2203/0792
摘要： An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.
摘要翻译： 一个实施例是用于形成微机电系统（MEMS）装置的方法。 该方法包括在第一衬底上形成MEMS结构，其中MEMS结构包括可移动元件; 在所述第一基板上形成接合结构; 以及在所述第一基板上形成支撑结构，其中所述支撑结构从所述接合结构突出。 该方法还包括将MEMS结构接合到第二衬底; 以及在所述第二基板的背面上形成通过（TSV）的贯穿基板，其中所述上覆的TSV与所述接合结构和所述支撑结构对准。
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公开(公告)号：US08796110B2
公开(公告)日：2014-08-05
申请号：US13214917
申请日：2011-08-22
申请人： Kuei-Sung Chang , Yi Heng Tsai
发明人： Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： H01L21/306
CPC分类号： B81C1/00539 , B81C1/00269 , B81C1/00634 , B81C2201/0194 , B81C2203/0127 , H01L21/6835 , H01L2221/68318 , H01L2221/68331 , H01L2221/68381
摘要： An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.
摘要翻译： 实施例是一种粘合方法。 该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后，将覆盖衬底粘合到活性衬底上。 手柄基板具有穿过其中的开口。 该方法还包括从封盖基板上移除手柄基板。 除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。 其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料，使得封盖基板通过接合材料结合到手柄基板。 可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。
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公开(公告)号：US09065358B2
公开(公告)日：2015-06-23
申请号：US13219927
申请日：2011-08-29
申请人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
IPC分类号： G01P15/125 , H02N1/00 , G01P15/08
CPC分类号： H02N1/006 , B81B3/0005 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/125 , G01P2015/0871 , H02N1/00 , Y10T29/49002
摘要： A microelectromechanical system (MEMS) device that reduces or eliminates stiction includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. A protrusion extends from the substrate and is configured to contact the movable element when the moving element moves in the at least one degree of freedom. The protrusion comprises a surface having a low surface energy relative a silicon oxide surface. The protrusion may be coupled to a voltage potential node to avoid or counteract electrostatic forces.
摘要翻译： 减少或消除静摩擦的微机电系统（MEMS）装置包括至少部分地悬挂在衬底上并具有至少一个自由度的衬底和可移动元件。 突起从衬底延伸并且构造成当移动元件以至少一个自由度移动时接触可移动元件。 突起包括相对于氧化硅表面具有低表面能的表面。 突起可以耦合到电压电位节点以避免或抵消静电力。
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公开(公告)号：US08878312B2
公开(公告)日：2014-11-04
申请号：US13195243
申请日：2011-08-01
申请人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
发明人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
CPC分类号： B81C1/00579 , B81B2207/015 , B81C2203/0771 , Y10T29/49126
摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
摘要翻译： 公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。 示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。
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公开(公告)号：US20130052797A1
公开(公告)日：2013-02-28
申请号：US13214917
申请日：2011-08-22
申请人： Kuei-Sung Chang , Yi Heng Tsai
发明人： Kuei-Sung Chang , Yi Heng Tsai
IPC分类号： H01L21/306
CPC分类号： B81C1/00539 , B81C1/00269 , B81C1/00634 , B81C2201/0194 , B81C2203/0127 , H01L21/6835 , H01L2221/68318 , H01L2221/68331 , H01L2221/68381
摘要： An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.
摘要翻译： 实施例是一种粘合方法。 该方法包括将手柄基板粘合到封盖基板上; 减薄封盖基板; 蚀刻封盖基板; 并且在减薄和蚀刻封盖衬底之后，将覆盖衬底粘合到活性衬底上。 手柄基板具有穿过其中的开口。 该方法还包括从封盖基板上移除手柄基板。 除去包括通过开口提供蚀刻剂以将手柄衬底与封盖衬底分离。 其他实施例还包括在手柄基板和封盖基板中的至少一个的表面上形成接合材料，使得封盖基板通过接合材料结合到手柄基板。 可以通过使用干法蚀刻来去除接合材料以从封盖基板去除手柄基板。
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公开(公告)号：US08368152B2
公开(公告)日：2013-02-05
申请号：US13089027
申请日：2011-04-18
申请人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
发明人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
CPC分类号： H01L29/84 , B81B2203/0307 , B81C1/00039 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.
摘要翻译： 本公开提供了一种微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括衬底，在衬底上方的电介质层，在电介质层上方的蚀刻停止层，以及在电介质层上方的两个锚栓，两个锚栓每个接触蚀刻停止层或顶部金属 层，设置在电介质层的上方。 该装置还包括一个MEMS结构层，该MEMS结构层设置在形成在两个锚栓之间的空腔之上，并且位于蚀刻停止层上方，从牺牲层释放出来。
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公开(公告)号：US20130015743A1
公开(公告)日：2013-01-17
申请号：US13219927
申请日：2011-08-29
申请人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
发明人： Yi Heng Tsai , Chia-Hua Chu , Kuei-Sung Chang
CPC分类号： H02N1/006 , B81B3/0005 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/125 , G01P2015/0871 , H02N1/00 , Y10T29/49002
摘要： A microelectromechanical system (MEMS) device that reduces or eliminates stiction includes a substrate and a movable element at least partially suspended above the substrate and having at least one degree of freedom. A protrusion extends from the substrate and is configured to contact the movable element when the moving element moves in the at least one degree of freedom. The protrusion comprises a surface having a low surface energy relative a silicon oxide surface. The protrusion may be coupled to a voltage potential node to avoid or counteract electrostatic forces.
摘要翻译： 减少或消除静摩擦的微机电系统（MEMS）装置包括至少部分地悬挂在衬底上并具有至少一个自由度的衬底和可移动元件。 突起从衬底延伸并且构造成当移动元件以至少一个自由度移动时接触可移动元件。 突起包括相对于氧化硅表面具有低表面能的表面。 突起可以耦合到电压电位节点以避免或抵消静电力。
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公开(公告)号：US20120261830A1
公开(公告)日：2012-10-18
申请号：US13089027
申请日：2011-04-18
申请人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
发明人： Chia-Hua Chu , Yi Heng Tsai , Kai-Chih Liang , Chia-Pao Shu , Li-Cheng Chu , Kuei-Sung Chang , Hsueh-An Yang , Chung-Hsien Lin
CPC分类号： H01L29/84 , B81B2203/0307 , B81C1/00039 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a micro-electro-mechanical systems (MEMS) device and a method for fabricating such a device. In an embodiment, a MEMS device includes a substrate, a dielectric layer above the substrate, an etch stop layer above the dielectric layer, and two anchor plugs above the dielectric layer, the two anchor plugs each contacting the etch stop layer or a top metal layer disposed above the dielectric layer. The device further comprises a MEMS structure layer disposed above a cavity formed between the two anchor plugs and above the etch stop layer from release of a sacrificial layer.
摘要翻译： 本公开提供了一种微机电系统（MEMS）装置及其制造方法。 在一个实施例中，MEMS器件包括衬底，在衬底上方的电介质层，在电介质层上方的蚀刻停止层，以及在电介质层上方的两个锚栓，两个锚栓每个接触蚀刻停止层或顶部金属 层，设置在电介质层的上方。 该器件还包括一个MEMS结构层，该MEMS结构层设置在形成在两个锚栓之间的空腔之上，并且位于蚀刻停止层上方，从牺牲层释放出来。
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公开(公告)号：US20120223613A1
公开(公告)日：2012-09-06
申请号：US13195243
申请日：2011-08-01
申请人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
发明人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
CPC分类号： B81C1/00579 , B81B2207/015 , B81C2203/0771 , Y10T29/49126
摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
摘要翻译： 公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。 示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。
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