公开(公告)号：US08927436B2

公开(公告)日：2015-01-06

申请号：US13480242

申请日：2012-05-24

申请人： Dae Ho Kim ,  Bong-Kyun Kim ,  Yong-Hwan Ryu ,  Hong Sick Park ,  Wang Woo Lee ,  Shin Il Choi

发明人： Dae Ho Kim ,  Bong-Kyun Kim ,  Yong-Hwan Ryu ,  Hong Sick Park ,  Wang Woo Lee ,  Shin Il Choi

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/02063 ,  H01L21/31144 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/42384

摘要： The present invention relates to a method for forming a trench that can remove residual particles in a trench using a metal mask, a method for forming a metal wire, and a method for manufacturing a thin film transistor array panel. The method for forming a trench includes: forming a first insulating layer on a substrate; forming a first metal layer on the first insulating layer; forming an opening by patterning the first metal layer; forming a trench by dry-etching the first insulating layer using the patterned first metal layer as a mask; and wet-etching the substrate. The dry-etching is performed using a main etching gas and a first auxiliary etching gas, and the first auxiliary etching gas includes argon.

摘要翻译： 本发明涉及使用金属掩模形成沟槽中的残留颗粒的形成方法，金属线形成方法以及薄膜晶体管阵列板的制造方法。 形成沟槽的方法包括：在衬底上形成第一绝缘层; 在所述第一绝缘层上形成第一金属层; 通过图案化第一金属层形成开口; 通过使用图案化的第一金属层作为掩模对第一绝缘层进行干蚀刻来形成沟槽; 并湿法蚀刻基板。 使用主蚀刻气体和第一辅助蚀刻气体进行干蚀刻，并且第一辅助蚀刻气体包括氩。

公开(公告)号：US09082701B2

公开(公告)日：2015-07-14

申请号：US13556396

申请日：2012-07-24

申请人： Yong-Hwan Ryu ,  Dae Ho Kim ,  Hong Sick Park ,  Shin Il Choi

发明人： Yong-Hwan Ryu ,  Dae Ho Kim ,  Hong Sick Park ,  Shin Il Choi

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L21/311 ,  H01L27/12 ,  H01L21/768

CPC分类号： H01L21/31144 ,  H01L21/28 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/3212 ,  H01L21/76802 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/1288

摘要： A method of forming a thin film transistor array panel includes: forming a first insulating layer on a substrate; forming an amorphous carbon layer on the first insulating layer; forming a second insulating layer on the amorphous carbon layer; forming an opening in the amorphous carbon layer by patterning the second insulating layer and the amorphous carbon layer; and forming a trench in the first insulating layer by etching the first insulating layer, the etching the first insulating layer using the amorphous carbon layer including the opening as a mask.

摘要翻译： 一种形成薄膜晶体管阵列面板的方法包括：在衬底上形成第一绝缘层; 在所述第一绝缘层上形成无定形碳层; 在所述无定形碳层上形成第二绝缘层; 通过图案化所述第二绝缘层和所述无定形碳层在所述无定形碳层中形成开口; 以及通过蚀刻所述第一绝缘层在所述第一绝缘层中形成沟槽，使用包括所述开口的所述无定形碳层作为掩模来蚀刻所述第一绝缘层。

公开(公告)号：US09059046B2

公开(公告)日：2015-06-16

申请号：US13612590

申请日：2012-09-12

申请人： Shin Il Choi ,  Seung-Ha Choi ,  Bong-Kyun Kim ,  Sang Gab Kim ,  Sho Yeon Kim ,  Hyun Kim ,  Hong Sick Park ,  Su Bin Bae

发明人： Shin Il Choi ,  Seung-Ha Choi ,  Bong-Kyun Kim ,  Sang Gab Kim ,  Sho Yeon Kim ,  Hyun Kim ,  Hong Sick Park ,  Su Bin Bae

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L27/12

CPC分类号： H01L27/1225

摘要： A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate; a gate line positioned on the substrate and including a gate electrode; a gate insulating layer positioned on the gate line; an oxide semiconductor layer positioned on the substrate; a source electrode and a drain electrode positioned on the oxide semiconductor layer; a first insulating layer positioned on the source electrode and the drain electrode and including a first contact hole; a data line positioned on the first insulating layer and intersecting the gate line; and a pixel electrode over the first insulating layer. The source electrode and the drain electrode each comprise a metal oxide. The data line is electrically connected to the source electrode through the first contact hole.

摘要翻译： 根据本发明的示例性实施例的薄膜晶体管阵列面板包括：基板; 位于所述基板上并包括栅电极的栅极线; 位于栅极线上的栅极绝缘层; 位于所述基板上的氧化物半导体层; 位于所述氧化物半导体层上的源电极和漏极; 位于所述源电极和所述漏极上并且包括第一接触孔的第一绝缘层; 位于所述第一绝缘层上且与所述栅极线相交的数据线; 以及在所述第一绝缘层上方的像素电极。 源电极和漏极各自包含金属氧化物。 数据线通过第一接触孔与源电极电连接。

公开(公告)号：US20090084406A1

公开(公告)日：2009-04-02

申请号：US12214658

申请日：2008-06-20

申请人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

发明人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC分类号： C11D7/06 ,  B08B7/04

CPC分类号： G03F7/425

摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

公开(公告)号：US20070278487A1

公开(公告)日：2007-12-06

申请号：US11706012

申请日：2007-02-12

申请人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

发明人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和薄膜晶体管基板的制造方法包括形成栅极线和数据线，该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交，薄膜晶体管电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US07901965B2

公开(公告)日：2011-03-08

申请号：US11706012

申请日：2007-02-12

申请人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

发明人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，该栅极线和数据线被插入并且限定基板上的像素区域的栅极绝缘层彼此相交;薄膜晶体管，电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US08163095B2

公开(公告)日：2012-04-24

申请号：US13101973

申请日：2011-05-05

申请人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk II Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

发明人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk II Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC分类号： C11D7/50

CPC分类号： G03F7/425

摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

公开(公告)号：US08158470B2

公开(公告)日：2012-04-17

申请号：US13018309

申请日：2011-01-31

申请人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

发明人： Jong Hyun Choung ,  Hong Sick Park ,  Sun Young Hong ,  Bong Kyun Kim ,  Bong Kyu Shin ,  Won Suk Shin ,  Byeong Jin Lee

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

摘要翻译： 薄膜晶体管基板和制造薄膜晶体管基板的方法包括：形成栅极线和数据线，其中栅极绝缘层相互插入并限定基板上的像素区域，薄膜晶体管电连接到 栅极线和数据线，以及与栅极线和数据线中的至少一个重叠的阶梯结构发生图案; 在所述基板上形成具有由阶梯状结构发生图案形成的台阶状部分的钝化层; 形成具有对应于所述钝化层上的阶梯状结构部分的第二阶梯结构部分的光致抗蚀剂图案; 使用光致抗蚀剂图案作为掩模来图案化钝化层; 在所述基板上形成透明导电层; 以及去除透明导电层被穿透光致抗蚀剂图案的台阶结构部分的剥离剂覆盖的光致抗蚀剂图案，并形成连接到薄膜晶体管的像素电极。

公开(公告)号：US08021087B2

公开(公告)日：2011-09-20

申请号：US10554687

申请日：2004-03-11

申请人： Chang Hee Choi ,  Hong Sick Park ,  Dae Wi Bae

发明人： Chang Hee Choi ,  Hong Sick Park ,  Dae Wi Bae

IPC分类号： B23B51/00

CPC分类号： B23B51/04 ,  B23B27/141 ,  B23B29/04 ,  B23B29/08 ,  B23B2200/125 ,  B23B2200/202 ,  B23B2200/204 ,  B23B2250/12 ,  B23B2251/408 ,  B23B2260/004 ,  Y10S408/713 ,  Y10T407/23 ,  Y10T408/455 ,  Y10T408/89

摘要： Tool holder assembly (TH) for multifunctional machining, such as drilling, boring, facing, and turning, eliminate interference between facing and turning, and secure an adequate chip groove space (10) for discharging chips therethrough without deterioration of a rigidity of the tool holder (TH), thereby securing a good quality of machining, and an exclusive adapter (TA) suitable to the foregoing tool holder (TH) assembly for multifunctional machining.

摘要翻译： 用于多功能加工的工具架组件（TH），例如钻孔，镗孔，面对和车削，消除面对和车削之间的干扰，并且确保足够的切屑槽空间（10）用于将切屑排出而不会降低工具的刚性 保持器（TH），从而确保良好的机械加工质量，以及适合于用于多功能加工的上述刀架（TH）组件的专用适配器（TA）。

公开(公告)号：US07968507B2

公开(公告)日：2011-06-28

申请号：US12214658

申请日：2008-06-20

申请人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

发明人： Ji Sun Lee ,  Hong Sick Park ,  Jong Hyun Choung ,  Sun Young Hong ,  Bong Kyun Kim ,  Byeong Jin Lee ,  Byung Uk Kim ,  Jong Hyun Jeong ,  Suk Il Yoon ,  Seong Bae Kim ,  Sung Gun Shin ,  Soon Beom Huh ,  Se Hwan Jung ,  Doo Young Jang

IPC分类号： C11D7/06

CPC分类号： G03F7/425

摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

摘要翻译： 本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板 。 在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的 无机盐化合物。 有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。