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    Magnetic head employing magnetoresistive sensor and magnetic storage and retrieval system
    1.
    发明授权
    Magnetic head employing magnetoresistive sensor and magnetic storage and retrieval system 失效
    磁头采用磁阻传感器和磁存储和检索系统

    公开(公告)号：US06327123B1

    公开(公告)日：2001-12-04

    申请号：US09368472

    申请日：1999-08-04

    申请人： Yoshiaki Kawato ,  Hiroshi Fukui ,  Kenichi Meguro ,  Yoshihiro Hamakawa

    发明人： Yoshiaki Kawato ,  Hiroshi Fukui ,  Kenichi Meguro ,  Yoshihiro Hamakawa

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

    摘要： A magnetic head is provided with a magnetoresistive sensor scarcely susceptible to heat and provided with a fixed layer capable of creating a pinned magnetic field of a sufficient intensity. The magnetic head comprises a magnetoresistive effect film having a free layer (21), a fixed layer (105) and an intermediate layer (104), and a pair of electrodes (25a, 25b) for supplying current to the magnetoresistance effect film. The free layer (21) is formed of a ferromagnetic material and the intermediate layer (104) is formed of a nonmagnetic material. The fixed layer (105) has a first ferromagnetic film (22), a second ferromagnetic film (24) and a nonmagnetic film (23) sandwiched between the first and the second ferromagnetic films (22, 24). The second ferromagnetic film (24) farther from the free layer (21) than the first ferromagnetic layer (22) is formed of a material having the property of permanent magnets. The magnetization of the fist ferromagnetic film (22) and that of the second ferromagnetic film (24) are coupled in an antiferromagnetic coupling fashion.

    摘要翻译： 磁头设置有几乎不易受热的磁阻传感器，并且具有能够产生足够强度的固定磁场的固定层。 磁头包括具有自由层（21），固定层（105）和中间层（104）的磁阻效应膜和用于向磁阻效应膜提供电流的一对电极（25a，25b）。 自由层（21）由铁磁材料形成，中间层（104）由非磁性材料形成。 固定层（105）具有夹在第一和第二铁磁性膜（22,24）之间的第一铁磁膜（22），第二铁磁膜（24）和非磁性膜（23）。 离开自由层（21）比第一铁磁层（22）更远的第二铁磁膜（24）由具有永磁体性质的材料形成。 第一铁磁膜（22）和第二铁磁膜（24）的磁化以反铁磁耦合方式耦合。

    Magnetoresistive head and magnetic storage apparatus
    2.
    发明授权
    Magnetoresistive head and magnetic storage apparatus 失效
    磁阻磁头和磁存储装置

    公开(公告)号：US06515837B1

    公开(公告)日：2003-02-04

    申请号：US09662643

    申请日：2000-09-15

    申请人： Yoshihiro Hamakawa ,  Shiroyasu Odai ,  Katsumi Hoshino

    发明人： Yoshihiro Hamakawa ,  Shiroyasu Odai ,  Katsumi Hoshino

    IPC分类号： G11B539

    CPC分类号： G11B5/3903 ,  G11B5/3109 ,  G11B5/3133 ,  G11B5/3146

    摘要： There is provided a magnetoresistive head which is capable of suppressing the fluctuation of read output while ensuring a sufficient dielectric breakdown voltage of the shielding portions by constituting the shielding portions with a Co-based material. Namely, the lower shield film is formed of a 2-ply composite film wherein the film (12′) of the lower shield film which is disposed contacting with the lower gap insulation film (13) is constituted by an amorphous soft magnetic film, while the film (12) which is disposed away from the lower gap insulation film is constituted by a crystalline soft magnetic film, thereby making it possible to suppress the fluctuation of read output even if the gap is narrowed without deteriorating the yield relative to the dielectric breakdown.

    摘要翻译： 提供了一种磁阻头，其能够通过用Co基材料构成屏蔽部分来确保屏蔽部分的足够的介电击穿电压，从而抑制读取输出的波动。 也就是说，下屏蔽膜由2层复合膜形成，其中下屏蔽膜的与下间隙绝缘膜（13）接触的膜（12'）由非晶软磁膜构成，而 离开下间隔绝缘膜设置的膜（12）由结晶软磁膜构成，从而即使间隙变窄而不会使相对于介质击穿的屈服劣化也可以抑制读取输出的波动 。

    Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device
    3.
    发明授权
    Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device 失效
    薄膜半导体器件和使用该薄膜半导体器件的光电转换器件

    公开(公告)号：US5686734A

    公开(公告)日：1997-11-11

    申请号：US502603

    申请日：1995-07-14

    申请人： Yoshihiro Hamakawa ,  Shigetoshi Sugawa ,  Tadashi Atoji ,  Hiroaki Okamoto

    发明人： Yoshihiro Hamakawa ,  Shigetoshi Sugawa ,  Tadashi Atoji ,  Hiroaki Okamoto

    IPC分类号： H01L29/165 ,  H01L31/0376 ,  H01L31/107 ,  H01L29/12

    CPC分类号： H01L31/03765 ,  H01L29/165 ,  H01L31/1075 ,  Y02E10/548

    摘要： A high performance thin film semiconductor device having a heterojunction such as a photoelectric conversion device is disclosed. In accordance with the present invention, the thin film semiconductor device comprises a thin semiconductor layer which forms a heterojunction with a non-single crystal silicon layer or non-single crystal silicon-germanium layer, wherein the valence band discontinuity at the heterointerface arising from the difference in optical energy bandgap is as small as 0.3 eV or less and wherein the thin semiconductor layer has an optical energy bandgap greater than 2.8 eV, so that hole transport performance may not be degraded. Such a thin semiconductor layer may be formed by using silane gas and methane gas with a flow rate ratio greater than 30 at a deposition rate less than 0.5 .ANG./sec.

    摘要翻译： 公开了具有异质结的高性能薄膜半导体器件，例如光电转换器件。 根据本发明，薄膜半导体器件包括与非单晶硅层或非单晶硅 - 锗层形成异质结的薄半导体层，其中由异源结面产生的价带不连续性 光能带隙的差异小到0.3eV或更小，并且其中薄的半导体层具有大于2.8eV的光能带隙，使得空穴传输性能不会降低。 这种薄的半导体层可以通过使用硅烷气体和甲烷气体形成，其流速比大于30，沉积速率小于每分钟0.5安培。

    Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
    6.
    发明授权
    Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon 失效
    具有非晶碳化硅和非晶硅的异质结的光电池

    公开(公告)号：US4385199A

    公开(公告)日：1983-05-24

    申请号：US253141

    申请日：1981-04-10

    申请人： Yoshihiro Hamakawa ,  Yoshihisa Tawada

    发明人： Yoshihiro Hamakawa ,  Yoshihisa Tawada

    IPC分类号： H01L31/075 ,  H01L31/20 ,  H01L31/06

    CPC分类号： H01L31/202 ,  H01L31/075 ,  H01L31/20 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photovoltaic cell having a hetero junction of amorphous silicon and amorphous silicon carbide has at least one of its p and n layers composed of amorphous silicon carbide of the general formula a-Si.sub.1-x C.sub.x obtained by glow discharge decomposition of a mixture of at least one gas selected from among silane, silicon fluoride and the derivatives thereof, and at least one gas selected from among hydrocarbons, alkylsilanes, the fluorides thereof and the derivatives thereof.

    摘要翻译： 具有非晶硅和非晶碳化硅的异质结的光伏电池具有由通过通式III-Si1-xCx的非晶碳化硅构成的其中的至少一个，其通过辉光放电分解得到的至少一种 选自硅烷，氟化硅及其衍生物的气体，以及选自烃，烷基硅烷，其氟化物及其衍生物中的至少一种气体。

    Magnetoresistive read head and magnetic storage system using the same
    8.
    发明授权
    Magnetoresistive read head and magnetic storage system using the same 失效
    磁阻读头和磁存储系统采用相同的

    公开(公告)号：US5461526A

    公开(公告)日：1995-10-24

    申请号：US36364

    申请日：1993-03-24

    申请人： Yoshihiro Hamakawa ,  Toshio Kobayashi ,  Naoki Koyama ,  Masahiro Kitada

    发明人： Yoshihiro Hamakawa ,  Toshio Kobayashi ,  Naoki Koyama ,  Masahiro Kitada

    IPC分类号： G11B5/39

    CPC分类号： G11B5/398 ,  G11B5/399 ,  G11B5/3967

    摘要： A magnetoresistive read head includes a magnetoresistive layer having a central active region and end domain control regions, an electrode layer connected to both ends of the magnetoresistive layer, a pattern for providing a transverse bias to the magnetoresistive layer, a soft magnetic film provided on both sides of the magnetoresistive layer for magnetically shielding the magnetoresistive layer, and a substrate for supporting the magnetoresistive layer, pattern and soft magnetic film. A distance between the two end domain control regions of the magnetoresistive layer indicative of a length of the central active region is smaller than a distance between inner end faces of the electrode layer and the distance between the inner end faces of the magnetoresistive substantially corresponds to a read track width. Since both inner end faces of the magnetoresistive layer are set to coincide with the inner end faces of the electrode layer or to be positioned inside thereof, the magnetoresistive read head can prevent generation of Barkhausen noise with a good yield. Further, a track width is determined substantially by the distance between the inner end faces of the hard magnetic layer so that there can be obtained a magnetoresistive read head which is good in its off-track characteristic as well as a magnetic storage system which uses the read head.

    摘要翻译： 磁阻读取头包括具有中心有源区和端畴控制区的磁阻层，连接到磁阻层两端的电极层，向磁阻层提供横向偏压的图案，设置在两者上的软磁膜 用于磁屏蔽磁阻层的磁阻层的侧面，以及用于支撑磁阻层，图案和软磁膜的基板。 指示中心有源区的长度的磁阻层的两个端畴控制区之间的距离小于电极层的内端面之间的距离，并且磁阻的内端面之间的距离基本上对应于 读取磁道宽度。 由于磁阻层的两个内端面被设定为与电极层的内端面一致或位于其内部，所以磁阻读取头可以以良好的产量来防止产生巴克豪森噪声。 此外，轨道宽度基本上由硬磁性层的内端面之间的距离确定，使得可以获得其偏离磁道特性良好的磁阻读取头以及使用该磁性存储系统的磁存储系统 读头

    Thin film magnetic head
    10.
    发明授权
    Thin film magnetic head 失效
    薄膜磁头

    公开(公告)号：US4881144A

    公开(公告)日：1989-11-14

    申请号：US142697

    申请日：1988-01-11

    申请人： Isamu Yuito ,  Eijin Moriwaki ,  Kazuo Shiiki ,  Yoshihiro Hamakawa ,  Hisashi Takano

    发明人： Isamu Yuito ,  Eijin Moriwaki ,  Kazuo Shiiki ,  Yoshihiro Hamakawa ,  Hisashi Takano

    IPC分类号： G11B5/31

    CPC分类号： G11B5/3163

    摘要： In a thin film magnetic head of the type wherein a lower magnetic pole, a gap layer, a first insulating layer, a coil, a second insulating layer and an upper magnetic pole are formed sequentially on a substrate, the present invention provides a thin film magnetic head characterized in that a surface active layer made of aluminum oxide, for example, is disposed between the first insulating layer and the second insulating layer except where the coil is formed on the first insulating layer so that the surface active layer is disposed between the coil and the second insulating layer. According to the present invention, it is possible to prevent the occurrence of bubbles between coil conductors, and eventually to improve flatness of the surface of the second insulating layer and to prevent degradation of the characteristics of the upper magnetic pole.

    摘要翻译： 在基板上依次形成下列磁极，间隙层，第一绝缘层，线圈，第二绝缘层和上磁极的薄膜磁头，本发明提供一种薄膜 磁头，其特征在于，例如在第一绝缘层和第二绝缘层之间设置由氧化铝制成的表面有源层，除了在第一绝缘层上形成线圈之外，表面活性层设置在第一绝缘层之间 线圈和第二绝缘层。 根据本发明，能够防止线圈导体之间产生气泡，最终提高第二绝缘层的表面的平坦性，防止上磁极的特性劣化。