公开(公告)号：US20140158196A1

公开(公告)日：2014-06-12

申请号：US14233383

申请日：2012-07-24

申请人： Yoshiaki Kurihara ,  Masato Yoshida ,  Takeshi Nojiri ,  Yasushi Kurata ,  Shuichiro Adachi ,  Takahiko Kato

发明人： Yoshiaki Kurihara ,  Masato Yoshida ,  Takeshi Nojiri ,  Yasushi Kurata ,  Shuichiro Adachi ,  Takahiko Kato

IPC分类号： H01L31/0224

CPC分类号： H01L31/022425 ,  H01B1/22 ,  H01L31/02245 ,  Y02E10/50

摘要： An element of the present invention includes a silicon substrate; an electrode which is provided on the silicon substrate and which is a sintered product of a paste composition for an electrode containing a phosphorus-containing copper alloy particle, a glass particle, a solvent and a resin; and a solder layer containing a flux, which is provided on the electrode.

摘要翻译： 本发明的元件包括硅衬底; 设置在硅基板上的电极，其是含有含磷铜合金粒子，玻璃粒子，溶剂和树脂的电极用糊料组合物的烧结体; 以及设置在电极上的含有焊剂的焊料层。

公开(公告)号：US20130042912A1

公开(公告)日：2013-02-21

申请号：US13572475

申请日：2012-08-10

申请人： Yoshiaki KURIHARA ,  Masato Yoshida ,  Takeshi Nojiri ,  Shuichiro Adachi ,  Takashiko Kato ,  Yasushi Kurata

发明人： Yoshiaki KURIHARA ,  Masato Yoshida ,  Takeshi Nojiri ,  Shuichiro Adachi ,  Takashiko Kato ,  Yasushi Kurata

IPC分类号： H01L31/0224 ,  H01L23/485 ,  B32B17/06 ,  B32B18/00 ,  B23K1/20 ,  B32B15/04

CPC分类号： B23K35/262 ,  B23K1/0016 ,  B23K1/203 ,  B23K35/268 ,  B23K2101/40 ,  H01L31/022425 ,  H01L31/022441 ,  H01L2924/0002 ,  Y02E10/50 ,  Y10T428/31678 ,  H01L2924/00

摘要： The solder bonded body according to the present invention contains: an oxide body to be bonded having an oxide layer on the surface thereof; and a solder layer bonded to the oxide layer, which the solder layer is formed by an alloy containing at least two metals selected from the group consisting of tin, copper, silver, bismuth, lead, aluminum, titanium and silicon and having a melting point of lower than 450° C. and has a zinc content of 1% by mass or less.

摘要翻译： 根据本发明的焊接接合体包含：在其表面上具有氧化物层的待结合的氧化物体; 以及焊料层，其与所述氧化物层结合，所述焊料层由含有选自锡，铜，银，铋，铅，铝，钛和硅中的至少两种金属的合金形成，并且具有熔点 低于450℃，锌含量为1质量％以下。

公开(公告)号：US20110028073A1

公开(公告)日：2011-02-03

申请号：US12902337

申请日：2010-10-12

申请人： Masato Fukasawa ,  Masato Yoshida ,  Naoyuki Koyama ,  Yuto Ootsuki ,  Chiaki Yamagishi ,  Kazuhiro Enomoto ,  Kouji Haga ,  Yasushi Kurata

发明人： Masato Fukasawa ,  Masato Yoshida ,  Naoyuki Koyama ,  Yuto Ootsuki ,  Chiaki Yamagishi ,  Kazuhiro Enomoto ,  Kouji Haga ,  Yasushi Kurata

IPC分类号： B24B29/02 ,  B24B7/20 ,  C09K13/00 ,  C08L33/24

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

摘要翻译： 本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有N-单取代产物和 一种选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物中的任何一种的N，N-二取代的产物。 对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。 因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺 薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

公开(公告)号：US20070266642A1

公开(公告)日：2007-11-22

申请号：US11878504

申请日：2007-07-25

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B7/22

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 本发明提供一种研磨剂，其包含含有介质的浆料，其中分散有i）至少一种，其中i） 由至少两个晶体构成并具有晶界或堆积密度不高于6.5g / cm 3的氧化铈颗粒和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US20050085168A1

公开(公告)日：2005-04-21

申请号：US10960941

申请日：2004-10-12

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC分类号： C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  B24D3/02 ,  B24B1/00

CPC分类号： C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

摘要： A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

摘要翻译： 一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m 2 / g，浆料颗粒的中值粒径为150nm至600nm。 氧化铈颗粒具有结构参数Y，表示通过X射线Rietveld方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietveld法（含RIETAN-94）为0.08〜0.3。 通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。

公开(公告)号：US06221118B1

公开(公告)日：2001-04-24

申请号：US09269650

申请日：1999-08-10

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC分类号： C09K314

CPC分类号： C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

摘要： This invention provides a cerium oxide abrasive with which the surfaces of substrates such as SiO2 insulating films can be polished at a high rate without causing scratches. The abrasive of the present invention comprises a slurry comprising cerium oxide particles whose primary particles have a diameter of from 10 nm to 600 nm and a median diameter of from 30 nm to 250 nm and slurry particles have a median diameter of from 150 nm to 600 nm and a maximum diameter of 3,000 nm or smaller, the cerium oxide particles being dispersed in a medium.

摘要翻译： 本发明提供一种氧化铈研磨剂，能够高速率地抛光SiO 2绝缘膜等基板的表面，而不产生划痕。 本发明的研磨剂包括包含氧化铈颗粒的浆料，其一次颗粒的直径为10nm至600nm，中值粒径为30nm至250nm，浆料颗粒的中值粒径为150nm至600nm nm，最大直径为3000nm以下，氧化铈粒子分散在介质中。

公开(公告)号：US08137159B2

公开(公告)日：2012-03-20

申请号：US13217447

申请日：2011-08-25

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

公开(公告)号：US07871308B2

公开(公告)日：2011-01-18

申请号：US11484611

申请日：2006-07-12

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00 ,  C09C1/68

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个 微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US20060148667A1

公开(公告)日：2006-07-06

申请号：US10544073

申请日：2004-01-30

申请人： Masato Fukasawa ,  Masato Yoshida ,  Naoyuki Koyama ,  Yuto Ootsuki ,  Chiaki Yamagishi ,  Kazuhiro Enomoto ,  Kouji Haga ,  Yasushi Kurata

发明人： Masato Fukasawa ,  Masato Yoshida ,  Naoyuki Koyama ,  Yuto Ootsuki ,  Chiaki Yamagishi ,  Kazuhiro Enomoto ,  Kouji Haga ,  Yasushi Kurata

IPC分类号： C11D7/50

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

摘要翻译： 本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物 和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任何一种的N，N-二取代的产物。 对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。 因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺 薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

公开(公告)号：US06863700B2

公开(公告)日：2005-03-08

申请号：US09782241

申请日：2001-02-13

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC分类号： C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  C09G1/04 ,  B24B1/00

CPC分类号： C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

摘要： A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietvelt method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

摘要翻译： 一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m 2 / g，浆料颗粒的中值粒径为150nm〜600nm。 氧化铈颗粒具有结构参数Y，表示通过X射线Rietvelt方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietvelt法（用RIETAN-94）为0.08〜0.3。 通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。