摘要:
To provide a pesticidal composition which controls a pest undesirable for cultivation of a useful crop plant or a useful plant. A pesticidal composition comprising the following (component A) and the following (component B) as active ingredients:(component A): one or more compounds selected from 3-arylphenyl sulfide derivatives represented by the formula [I]:(component A): wherein R is a C2-C6 alkyl group which may be substituted, or the like, each of B0, B1, B2 and B3 which are independent of one another, is a hydrogen atom, a halogen atom or a haloalkyl group, n is an integer of from 0 to 2, and Ar is a phenyl group, a pyrazolyl group or a triazolyl group, (component B): one or more compounds selected from the group consisting of triazamate, butocarboxim, butoxycarboxim, chromafenozide, halofenozide, cyflumetofen, prallethrin, acetoprole, ethiprole, methamidophos, flonicamid, pyridalyl, flufenerim, flubendiamide, tebufenozide, fenazaquin and cyenopyrafen.
摘要:
To provide a pesticidal composition which controls a pest undesirable for cultivation of a useful crop plant or a useful plant.A pesticidal composition comprising the following (component A) and the following (component B) as active ingredients: (component A): one or more compounds selected from 3-arylphenyl sulfide derivatives represented by the formula [I]: (component A): wherein R is a C2-C6 alkyl group which may be substituted, or the like, each of B0, B1, B2 and B3 which are independent of one another, is a hydrogen atom, a halogen atom or a haloalkyl group, n is an integer of from 0 to 2, and Ar is a phenyl group, a pyrazolyl group or a triazolyl group, (component B): one or more compounds selected from the group consisting of triazamate, butocarboxim, butoxycarboxim, chromafenozide, halofenozide, cyflumetofen, prallethrin, acetoprole, ethiprole, methamidophos, flonicamid, pyridalyl, flufenerim, flubendiamide, tebufenozide, fenazaquin and cyenopyrafen.
摘要:
To provide pesticides such as insecticides, miticides and nematicides, which are excellent in the safety, pesticidal effects, residual effectiveness, etc., which further have infiltration, and which can be applied by soil treatment.A pesticide comprising a 3-alkoxy-1-phenyl-pyrazole derivative represented by the formula [I] or an agriculturally acceptable salt thereof as an active ingredient: wherein, for example, R1 is a C1-C10 alkyl group or the like, R2 is a hydrogen atom or the like, R3 is a hydrogen atom or the like, and each of R4, R5, R6 and R8 which are independent of one another, is a hydrogen atom or the like, and R7 is a C2-C4 haloalkylthio group or the like.
摘要:
To provide pesticides such as insecticides, miticides and nematicides, which are excellent in the safety, pesticidal effects, residual effectiveness, etc., which further have infiltration, and which can be applied by soil treatment.A pesticide comprising a 3-alkoxy-1-phenyl-pyrazole derivative represented by the formula [I] or an agriculturally acceptable salt thereof as an active ingredient: wherein, for example, R1 is a C1-C10 alkyl group or the like, R2 is a hydrogen atom or the like, R3 is a hydrogen atom or the like, and each of R4, R5, R6 and R8 which are independent of one another, is a hydrogen atom or the like, and R7 is a C2-C4 haloalkylthio group or the like.
摘要:
A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.
摘要:
A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region.
摘要:
A semiconductor device according to the present invention includes a semiconductor layer made of a wide bandgap semiconductor having a gate trench provided with a sidewall and a bottom wall, a gate insulating film formed on the sidewall and the bottom wall of the gate trench, and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film, while the semiconductor layer includes a first conductivity type source region formed to be exposed on the side of a front surface of the semiconductor layer for partially forming the sidewall of the gate trench, a second conductivity type body region formed on a side of the source region closer to a rear surface of the semiconductor layer to be in contact with the source region for partially forming the sidewall of the gate trench, a first conductivity type drift region formed on a side of the body region closer to the rear surface of the semiconductor layer to be in contact with the body region for forming the bottom wall of the gate trench, and a second conductivity type first breakdown voltage holding region selectively formed on an edge portion of the gate trench where the sidewall and the bottom wall intersect with each other in a partial region of the gate trench.
摘要:
A semiconductor device (A1) includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), a trench (3), an insulating layer (5), a gate electrode (41), and an n-type semiconductor region (14). The p-type semiconductor layer (13) includes a channel region that is along the trench (3) and in contact with the second n-type semiconductor layer (12) and the n-type semiconductor region (14). The size of the channel region in the depth direction x is 0.1 to 0.5 μm. The channel region includes a high-concentration region where the peak impurity concentration is approximately 1×1018 cm−3. The semiconductor device A1 thus configured allows achieving desirable values of on-resistance, dielectric withstand voltage and threshold voltage.
摘要:
The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film.
摘要:
The present invention is to provide an oxopyrazine derivative having an excellent herbicidal activity and besides exhibiting high safety for useful crops and the like, or a salt thereof, and a herbicide containing the same.The present invention relates to an oxopyrazine derivative represented by formula [I]: wherein X1 represents an oxygen atom or a sulfur atom; X2 represents CH or N(O)m; m represents an integer of 0 or 1; R1 represents a hydrogen atom, a C1-C12 alkyl group and the like; R2 represents a halogen atom, a cyano group and the like; R3 is a hydroxyl group, a halogen atom and the like; A1 represents C(R4R5); A2 represents C(R6R7) or C═O; A3 represents C(R8R9); R4 to R9 represent a hydrogen atom or an alkyl group, or a salt thereof, and a herbicide containing these compounds.