公开(公告)号：US06479882B2

公开(公告)日：2002-11-12

申请号：US09737962

申请日：2000-12-18

申请人： Yoshihiro Yamaguchi ,  Takeaki Asaeda ,  Katsumi Satoh ,  Noritoshi Hirano

发明人： Yoshihiro Yamaguchi ,  Takeaki Asaeda ,  Katsumi Satoh ,  Noritoshi Hirano

IPC分类号： H01L2900

CPC分类号： H01C7/12 ,  H01L27/0288 ,  H01L29/8605 ,  H01L29/861 ,  H02H9/02

摘要： The current-limiting device 1 includes a silicon substrate 2 having surfaces opposite to each other, and two electrodes 3 deposited respectively on the opposite surfaces of the silicon substrate. The silicon substrate 2 is of a three-layered structure including an N− layer 4 of a low impurity density and an N+ layers 5 of a high impurity density formed respectively on opposite surfaces of the N− layer 4. The electrodes 3, are deposited on an outer surface of each of the N+ layers 5 remote from the N− layer 4. The constant current substantially flows in the current-limiting device 1 if the applied voltage is higher than a predetermined value.

公开(公告)号：US06388276B1

公开(公告)日：2002-05-14

申请号：US09824090

申请日：2001-04-03

申请人： Noritoshi Hirano ,  Yoshihiro Yamaguchi ,  Katsumi Satoh

发明人： Noritoshi Hirano ,  Yoshihiro Yamaguchi ,  Katsumi Satoh

IPC分类号： H01L2974

CPC分类号： H01L29/7416

摘要： Providing a reverse conducting thyristor, wherein a diode and a GTO thyristor are reverse parallel-connected, with which it is possible to reduce a surface area size of a separation portion and avoid variations in insulation characteristics. A separation portion between a diode and a GTO thyristor includes a semiconductor substrate of a first conductivity type, a thin film region of a second conductivity type formed in a major surface of the semiconductor substrate, and a guard ring region of the second conductivity type.

摘要翻译： 提供反向导通晶闸管，其中二极管和GTO晶闸管反向并联，借此可以减小分离部分的表面积尺寸并避免绝缘特性的变化。二极管与GTO之间的分离部分 晶闸管包括形成在半导体衬底的主表面中的第一导电类型的半导体衬底，第二导电类型的薄膜区和第二导电类型的保护环区。

公开(公告)号：US06521919B2

公开(公告)日：2003-02-18

申请号：US09813985

申请日：2001-03-22

申请人： Noritoshi Hirano ,  Katsumi Satoh ,  Yoshihiro Yamaguchi

发明人： Noritoshi Hirano ,  Katsumi Satoh ,  Yoshihiro Yamaguchi

IPC分类号： H01L2974

CPC分类号： H01L29/66363 ,  H01L23/051 ,  H01L29/744 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is composed a semiconductor substrate having a first conducting-type first semiconductor layer, a second conducting-type second semiconductor layer, a first conducting-type third semiconductor layer, a second conducting-type fourth semiconductor layer and a first conducting-type fifth semiconductor layer, a first main electrode for short-circuiting the first semiconductor layer and the second semiconductor layer, a second main electrode for short-circuiting the fourth semiconductor layer and the fifth semiconductor layer, and a control electrode provided on the third semiconductor layer. The first semiconductor layer and the second semiconductor layer form a joint. The second semiconductor layer and the third semiconductor layer form a joint. The third semiconductor layer and the fourth semiconductor layer form a joint. The fourth semiconductor layer and the fifth semiconductor layer form a joint.

摘要翻译： 半导体器件由具有第一导电型第一半导体层，第二导电型第二半导体层，第一导电型第三半导体层，第二导电型第四半导体层和第一导电型第二半导体层 第五半导体层，用于使第一半导体层和第二半导体层短路的第一主电极，用于使第四半导体层和第五半导体层短路的第二主电极，以及设置在第三半导体层上的控制电极 。 第一半导体层和第二半导体层形成接头。 第二半导体层和第三半导体层形成接头。 第三半导体层和第四半导体层形成接头。 第四半导体层和第五半导体层形成接头。

公开(公告)号：US06489666B1

公开(公告)日：2002-12-03

申请号：US09624998

申请日：2000-07-25

申请人： Yoshihiro Yamaguchi ,  Katsumi Satoh ,  Noritoshi Hirano

发明人： Yoshihiro Yamaguchi ,  Katsumi Satoh ,  Noritoshi Hirano

IPC分类号： H01L2906

CPC分类号： H01L29/861 ,  H01L29/0661

摘要： A semiconductor device (102) comprises an N type semiconductor substrate (1). A P layer (22) is formed in a first surface (S1) of the semiconductor substrate (1), and a P layer (23) is formed in the semiconductor substrate (1) and in contact with the first surface (S1) and a second surface (S2) of the semiconductor substrate (1) corresponding to a beveled surface. The P layer (23) surrounds the P layer (22) in non-contacting relationship with the P layer (22). A separation distance (D) between the P layers (22, 23) is set at not greater than 50 &mgr;m. A distance (D23) between a third surface (S3) of the semiconductor substrate (1) and a portion of the P layer (23) which is closer to the third surface (S3) is less than a distance (D22) between the third surface (S3) and a portion of the P layer (22) which is closer to the third surface (S3). An N++ layer (24) is formed in part of the third surface (S3) which is substantially opposed to the P layer (22), and an N+ layer (25) is formed in contact with the N++ layer (24) and the third surface (S3). A cathode electrode (33) is formed on the third surface (S3) so as to cover a region (S322) of the third surface (S3) which is opposed to the P layer (22). The semiconductor device (102) suppresses heat generation to perform a stable operation.

摘要翻译： 半导体器件（102）包括N型半导体衬底（1）。 AP层（22）形成在半导体衬底（1）的第一表面（S1）中，并且在半导体衬底（1）中形成P层（23）并与第一表面（S1）接触，并且 所述半导体衬底（1）的第二表面（S2）对应于斜面。 P层（23）以与P层（22）非接触的关系围绕P层（22）。 P层（22,23）之间的间隔距离（D）设定为50μm以下。 半导体衬底（1）的第三表面（S3）与更靠近第三表面（S3）的P层（23）的一部分之间的距离（D23）小于第三 表面（S3）和更靠近第三表面（S3）的P层（22）的一部分。 在基本上与P层（22）相对的第三表面（S3）的一部分中形成N ++层（24），并且形成与N ++层（24）接触的N +层（25） 表面（S3）。 在第三表面（S3）上形成阴极电极（33），以覆盖与P层（22）相对的第三表面（S3）的区域（S322）。 半导体装置（102）抑制发热来进行稳定的动作。

公开(公告)号：US08987912B2

公开(公告)日：2015-03-24

申请号：US13020235

申请日：2011-02-03

申请人： Yoshihiro Yamaguchi

发明人： Yoshihiro Yamaguchi

IPC分类号： H01L23/02 ,  H01L23/52 ,  H01L23/48 ,  H01L23/10 ,  H01L23/34 ,  H01L29/40 ,  H01L23/31 ,  H01L23/373 ,  H01L23/433 ,  H01L23/495 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/49531 ,  H01L23/49811 ,  H01L24/01 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/72 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A semiconductor device includes a substrate having a conductor; a semiconductor chip disposed on the substrate and electrically connected to the conductor; a tubular electrode having one end electrically connected to the conductor; and a sealing resin sealing the substrate, the semiconductor chip and the electrode. The electrode is configured to be extendable and contractible in the stacking direction in which the substrate and the semiconductor chip are stacked in the state before sealing of the sealing resin. The edge of the other end of the electrode is exposed from the sealing resin. The electrode has a hollow space opened at the edge of the other end. Therefore, a semiconductor device reduced in size and a method of manufacturing this semiconductor device can be provided.

摘要翻译： 半导体器件包括具有导体的衬底; 半导体芯片，其设置在所述基板上并电连接到所述导体; 管状电极，其一端电连接到导体; 以及将基板，半导体芯片和电极密封的密封树脂。 电极被配置为在密封树脂密封之前的状态下层叠基板和半导体芯片的堆叠方向上可伸缩。 电极另一端的边缘从密封树脂露出。 电极具有在另一端的边缘处开口的中空空间。 因此，可以提供尺寸减小的半导体器件和制造该半导体器件的方法。

公开(公告)号：US08976193B2

公开(公告)日：2015-03-10

申请号：US11754582

申请日：2007-05-29

申请人： Hiroki Takakura ,  Shiro Miyagi ,  Yoshihiro Yamaguchi

发明人： Hiroki Takakura ,  Shiro Miyagi ,  Yoshihiro Yamaguchi

IPC分类号： G09G5/00 ,  G06F17/30 ,  G06F3/0481

CPC分类号： G06F17/30265 ,  G06F3/0481

摘要： An information processing apparatus that executes information display processing is disclosed. The apparatus includes: a display unit that executes information display; and a data processing unit that executes a control of the information display of the display unit and data processing based on a user input. The data processing unit displays an image browsing screen, which corresponds to image data stored in a storage unit, on the display unit and executes display of a map at the position, which corresponds to position information included in attribute information of a selected image, on the basis of a user's input of image selection information and map display request.

摘要翻译： 公开了执行信息显示处理的信息处理装置。 该装置包括：执行信息显示的显示单元; 以及数据处理单元，其执行对显示单元的信息显示的控制和基于用户输入的数据处理。 该数据处理单元将与存储在存储单元中的图像数据相对应的图像浏览屏幕显示在显示单元上，并且在与所选择的图像的属性信息中包括的位置信息对应的位置上执行地图的显示， 用户输入图像选择信息和地图显示请求的基础。

公开(公告)号：US08729421B2

公开(公告)日：2014-05-20

申请号：US11629283

申请日：2005-06-02

申请人： Satoshi Ohnishi ,  Yoshihiro Yamaguchi

发明人： Satoshi Ohnishi ,  Yoshihiro Yamaguchi

IPC分类号： B23K9/02

CPC分类号： B23K37/0408 ,  B23K7/002 ,  B23K10/00 ,  B23K26/0884 ,  B23K26/16 ,  B23K26/38 ,  B23K26/702 ,  B23K37/0461 ,  B23K2101/18

摘要： A lattice pallet 13 having a large number of supporters for placing a plate 14 is installed to a table 12 so as to be freely fittable and removable. Bringing in of the plate 14 is performed by the method of raising the lattice pallet 13 with a crane with the plate 14 already having been loaded upon the lattice pallet 13 in a different location, transporting them over the table 12, and lowering them down onto the table 12. Directly after cutting has been completed, the lattice pallet 12 is raised and separated from the table 12 with the manufactured product and the left over material carried upon it and is taken away to a different location, and another lattice pallet 13 with another plate 14 mounted upon it is brought in with the crane upon the table 12, and the task of cutting this other plate 14 is commenced.

摘要翻译： 具有用于放置板14的大量支撑器的格子托盘13被安装到桌子12上，以便可自由地装配和拆卸。 通过用起重机提升格子托盘13的方法来进行板14的进入，该起重机已将板14已经装载在不同位置的格子托盘13上，将它们运送到工作台12上，并将它们下降到 桌子12.切割完成之后，格子托盘12被升起并与工作台12分离，制成品并将剩下的材料运送到其上并被带走到不同的位置，另一个格子托盘13具有 安装在其上的另一个板14与起重机一起被放置在工作台12上，并且开始切割另一个板14的任务。

公开(公告)号：US20130240912A1

公开(公告)日：2013-09-19

申请号：US13988535

申请日：2011-12-05

申请人： Hiroki Shiota ,  Seiji Oka ,  Yoshihiro Yamaguchi

发明人： Hiroki Shiota ,  Seiji Oka ,  Yoshihiro Yamaguchi

IPC分类号： H01L23/495 ,  H01L29/16

CPC分类号： H01L23/49568 ,  H01L23/3121 ,  H01L23/36 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/072 ,  H01L29/1602 ,  H01L29/1608 ,  H01L2224/32013 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device including: a semiconductor element; a lead frame connected to the semiconductor element; a metal base plate mounted on the lead frame via a first insulation layer; and a second insulation layer disposed on the opposite side of the metal base plate face on which the first insulation layer is disposed; wherein the first insulation layer is an insulation layer whose heat-dissipation performance is higher than that of the second insulation layer, and the second insulation layer is an insulation layer whose insulation performance is the same as that of the first insulation layer or higher than that of the first insulation layer.

摘要翻译： 一种半导体器件，包括：半导体元件; 连接到所述半导体元件的引线框架; 通过第一绝缘层安装在引线框架上的金属基板; 以及第二绝缘层，其设置在设置有所述第一绝缘层的所述金属基板面的相对侧上; 其特征在于，所述第一绝缘层是绝热层，其绝热性能比所述第二绝缘层高，绝缘性能与所述第一绝缘层的绝缘性能相同， 的第一绝缘层。

公开(公告)号：US08530738B2

公开(公告)日：2013-09-10

申请号：US13254920

申请日：2010-03-04

申请人： Shuzi Hayase ,  Yoshihiro Yamaguchi

发明人： Shuzi Hayase ,  Yoshihiro Yamaguchi

IPC分类号： H01L31/0248 ,  H01L31/0216

CPC分类号： H01G9/2072 ,  H01G9/2031 ,  H01G9/2059 ,  H01L51/0064 ,  H01M14/005 ,  Y02E10/542 ,  Y02P70/521

摘要： There is provided a tandem-type dye-sensitized solar cell having a novel structure whereby optical absorption efficiency is improved and which can be manufactured at low cost.A dye-sensitized solar cell 10 comprises an anode substrate 12, a first dye-carrying porous oxide semiconductor layer 14, an electrolytic solution layer 16a, a porous support layer 18, a second dye-carrying porous oxide semiconductor layer 20, an electrolytic solution layer 16b, and a cathode substrate 22, arranged in order from an optical incidence side. The porous support layer 18 supports an iodine redox catalyst layer 19. Electrons derived by a conductor from a conductor layer 12b are introduced to the cathode substrate 22, thereby configuring, for example, a battery circuit for lighting purposes.

摘要翻译： 提供了具有新型结构的串联型染料敏化太阳能电池，由此光学吸收效率提高并且可以以低成本制造。 染料敏化太阳能电池10包括阳极基底12，第一染料负载多孔氧化物半导体层14，电解液层16a，多孔载体层18，第二染料负载多孔氧化物半导体层20，电解溶液 层16b和阴极基板22，从光入射侧依次配置。 多孔支撑层18支撑碘氧化还原催化剂层19.由导体层12b导体产生的电子引入阴极基板22，从而构成例如用于照明目的的电池电路。

公开(公告)号：US08439343B2

公开(公告)日：2013-05-14

申请号：US12857593

申请日：2010-08-17

申请人： Yoshihiro Yamaguchi

发明人： Yoshihiro Yamaguchi

IPC分类号： B65H3/44

CPC分类号： B65H3/44 ,  B65H1/14 ,  B65H1/266 ,  B65H5/26 ,  B65H7/02 ,  B65H2402/441 ,  B65H2405/114 ,  B65H2405/3311 ,  B65H2511/212 ,  B65H2511/414 ,  B65H2511/514 ,  B65H2801/06 ,  B65H2220/03 ,  B65H2220/02 ,  B65H2220/01 ,  B65H2220/11

摘要： An image forming apparatus for forming an image on a sheet including: a housing; a cassette detachably accommodated in the housing and configured to store the sheet; a feeding unit configured to feed the sheet; and an image forming unit configured to form the image on the sheet fed by the feeding unit, wherein the cassette includes: a first wall along the trailing edge, a second wall along the leading edge, a first bottom plate extending from the first wall toward the second wall, a second bottom plate extending from the second wall toward the first wall, and a connecting member configured to set a first state where the first and second bottom plates are connected and a second state where the first and second bottom plates are disconnected, and the first and second bottom plates in the second state are independently withdrawable from the housing.

摘要翻译： 一种用于在片材上形成图像的图像形成装置，包括：壳体; 盒，其可拆卸地容纳在所述壳体中并且被配置为存储所述片材; 进给单元，其构造成供给所述片材; 以及图像形成单元，被配置为在由所述馈送单元馈送的片材上形成图像，其中所述盒包括：沿着所述后缘的第一壁，沿着所述前缘的第二壁，从所述第一壁朝向 所述第二壁，从所述第二壁朝向所述第一壁延伸的第二底板，以及连接构件，其被配置为设定所述第一和第二底板连接的第一状态以及所述第一和第二底板断开的第二状态 并且处于第二状态的第一和第二底板可独立地从壳体抽出。