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9 条记录 (耗时 0.019 秒)

    Apparatus for evaluating degradation of pattern features
    1.
    发明授权
    Apparatus for evaluating degradation of pattern features 失效
    用于评估图案特征的劣化的装置

    公开(公告)号：US08401273B2

    公开(公告)日：2013-03-19

    申请号：US12691534

    申请日：2010-01-21

    申请人： Yoshinori Momonoi ,  Atsuko Yamaguchi ,  Taro Osabe

    发明人： Yoshinori Momonoi ,  Atsuko Yamaguchi ,  Taro Osabe

    IPC分类号： G06K9/00

    CPC分类号： G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    摘要： A measurement tool apparatus for evaluating degradation of pattern features in a semiconductor device manufacturing process. The measurement tool apparatus detects variations in the patterns from SEM images thereof and extracts pattern edge points along the circumference of each pattern. The measurement tool apparatus compares the pattern edge points to corresponding edge points of an ideal shape so as to determine deviation of the patterns. Metrics are derived from analysis of the deviations. The measurement tool apparatus uses the metrics in calculating an index representative of the geometry of edge spokes of the pattern, an indicator of the orientation of the edge spokes, and/or anticipated effects of the edge spokes on device performance.

    摘要翻译： 一种用于评估半导体器件制造工艺中的图案特征的劣化的测量工具装置。 测量工具装置从其SEM图像检测图案的变化，并且沿着每个图案的圆周提取图案边缘点。 测量工具装置将图案边缘点与理想形状的对应边缘点进行比较，以确定图案的偏差。 指标来源于偏差分析。 测量工具装置使用度量来计算表示图案的边缘辐条的几何形状的指标，边缘辐条的取向的指示符和/或边缘辐条对设备性能的预期效果。

    Apparatus for cleaning semiconductor wafers in a vacuum environment
    5.
    发明授权
    Apparatus for cleaning semiconductor wafers in a vacuum environment 失效
    用于在真空环境中清洁半导体晶片的装置

    公开(公告)号：US06643893B2

    公开(公告)日：2003-11-11

    申请号：US09809202

    申请日：2001-03-16

    申请人： Yoshinori Momonoi ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Shinichi Tachi

    发明人： Yoshinori Momonoi ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Shinichi Tachi

    IPC分类号： B08B1100

    CPC分类号： H01L21/67028 ,  B08B5/02 ,  B08B7/0035

    摘要： A dry cleaning device, wherein a pad is moved towards a surface of a wafer, cleaning gas is injected into a space formed between the pad and the wafer to generate a high-speed gas flow along the surface of the wafer whereby particles left on the surface of the wafer are removed with the high-speed gas flow. In addition, in order to assist this physical cleaning action, either a chemical or an electrical cleaning method such as a plasma additionally may be used.

    摘要翻译： 一种干洗装置，其中衬垫朝向晶片的表面移动，清洁气体被注入到形成在衬垫和晶片之间的空间中，以沿着晶片的表面产生高速气流，从而颗粒留在 用高速气流除去晶片的表面。 此外，为了辅助这种物理清洁动作，可以使用诸如等离子体的化学或电清洁方法。

    Plasma processing system and method for manufacturing a semiconductor device by using the same
    6.
    发明授权
    Plasma processing system and method for manufacturing a semiconductor device by using the same 失效
    等离子体处理系统及其制造方法

    公开(公告)号：US06551445B1

    公开(公告)日：2003-04-22

    申请号：US09665045

    申请日：2000-09-19

    申请人： Ken'etsu Yokogawa ,  Yoshinori Momonoi ,  Nobuyuki Negishi ,  Masaru Izawa ,  Shinichi Tachi

    发明人： Ken'etsu Yokogawa ,  Yoshinori Momonoi ,  Nobuyuki Negishi ,  Masaru Izawa ,  Shinichi Tachi

    IPC分类号： H05H100

    CPC分类号： H01J37/32623 ,  H01J37/32678

    摘要： A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.

    摘要翻译： 平行板ECR等离子体处理系统能够延长能够保持连续，均匀状态的等离子体密度区域。 在该系统中，设置由螺线管线圈和第二磁场形成装置形成的第一磁场形成装置，使得平面板表面上的磁通线的方向分布由 来自第一和第二磁场形成装置的组合磁场由此控制磁场与电磁波的相互作用程度的分布。 该控制确保在高密度等离子体形成条件下的等离子体的均匀性，从而使得能够在宽范围的低至高密度下形成连续的等离子体。 因此，可以实现等离子体处理系统，其确保在宽等离子体条件下的处理，包括在高密度条件下的高速处理。

    Manufacturing method for semiconductor devices
    7.
    发明授权
    Manufacturing method for semiconductor devices 有权
    半导体器件的制造方法

    公开(公告)号：US06977229B2

    公开(公告)日：2005-12-20

    申请号：US10460155

    申请日：2003-06-13

    申请人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Masaru Izawa

    发明人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Masaru Izawa

    IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L21/302

    CPC分类号： H01L21/0206 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67028 ,  H01L21/76807 ,  H01L21/76814

    摘要： The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.

    摘要翻译： 提供本发明以防止半导体器件制造工艺的干洗中的半导体器件的产量降低。 由于等离子体发生装置产生的第一气体的等离子体引起的电作用和化学作用以及由靠近主表面的平板焊接产生的高速气流的粘性摩擦力引起的物理作用 一起施加在一起以清洁晶片的主表面。 在清洁之后，将晶片暴露于相同真空室中的第二气体的等离子体，然后转移到大气中。

    Method for cleaning semiconductor wafers in a vacuum environment
    8.
    发明授权
    Method for cleaning semiconductor wafers in a vacuum environment 有权
    在真空环境中清洁半导体晶片的方法

    公开(公告)号：US06629538B2

    公开(公告)日：2003-10-07

    申请号：US09811652

    申请日：2001-03-20

    申请人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Masaru Izawa ,  Shinichi Tachi

    发明人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Masaru Izawa ,  Shinichi Tachi

    IPC分类号： B08B600

    CPC分类号： H01L21/02046 ,  B08B1/00 ,  B08B1/04 ,  B08B5/02 ,  B08B7/0035 ,  H01L21/67028

    摘要： A method of dry cleaning surfaces of a semiconductor wafer includes the steps of placing a processed wafer in a vacuum environment and positioning a pad near each of a front surface and a back surface of the wafer. Cleaning gas is injected into a small clearance formed between each pad and the front and rear surfaces to generate a high-speed gas flow along the surface of the wafer. Particles left at the surfaces of the processed wafer are physically cleaned and removed with the high-speed gas flow. In order to assist this physical cleaning action, it is also possible to apply either a chemical cleaning method or an electrical cleaning method under application of plasma.

    摘要翻译： 半导体晶片的干式清洗表面的方法包括以下步骤：将处理的晶片放置在真空环境中并将衬垫定位在晶片的前表面和后表面中的每一个周围。 将清洁气体注入到每个垫与前表面和后表面之间形成的小间隙中，以产生沿着晶片表面的高速气流。 留在处理过的晶片表面的颗粒被物理清洗并用高速气流除去。 为了辅助这种物理清洁动作，也可以在施加等离子体的情况下应用化学清洗方法或电气清洁方法。

    Plasma treatment apparatus and plasma treatment method
    9.
    发明授权
    Plasma treatment apparatus and plasma treatment method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US06475918B1

    公开(公告)日：2002-11-05

    申请号：US09679348

    申请日：2000-10-05

    申请人： Masaru Izawa ,  Kenetsu Yokogawa ,  Nobuyuki Negishi ,  Yoshinori Momonoi ,  Shinichi Tachi

    发明人： Masaru Izawa ,  Kenetsu Yokogawa ,  Nobuyuki Negishi ,  Yoshinori Momonoi ,  Shinichi Tachi

    IPC分类号： H01L2100

    CPC分类号： H01J37/32678 ,  H01J37/32422 ,  H01L21/67069 ,  H01L21/76802

    摘要： An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O, F or N radicals, gas flow rate or consumption amount of O, F and N on the inner wall surface with etching time to suppress excessive O, F and N which become excessive in the initial stage of etching, the method also including control for the flow rate or the consumption amount based on the result of measurement for plasmas during etching so as to obtain a stable etching shape. Since bowing can be reduced upon fabrication of insulation film hole and insulation film while maintaining the etching rate and the selectivity, finer semiconductor device can be produced easily.

    摘要翻译： 一种蚀刻方法，其能够在制造半导体时获得精细的制造形状，特别是制造绝缘膜时的垂直制造形状，该方法包括控制O，F或N自由基的入射量，气体流速或 用蚀刻时间对内壁表面的O，F和N的消耗量进行蚀刻，以抑制在蚀刻的初始阶段过度的过量的O，F和N，该方法还包括基于流量或消耗量的控制 在蚀刻期间等离子体的测量结果，以获得稳定的蚀刻形状。 由于在保持蚀刻速率和选择性的同时，在制造绝缘膜孔和绝缘膜时可以减少弯曲，因此可以容易地制造更细的半导体器件。