公开(公告)号：US06643893B2

公开(公告)日：2003-11-11

申请号：US09809202

申请日：2001-03-16

申请人： Yoshinori Momonoi ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Shinichi Tachi

发明人： Yoshinori Momonoi ,  Kenetsu Yokogawa ,  Masaru Izawa ,  Shinichi Tachi

IPC分类号： B08B1100

CPC分类号： H01L21/67028 ,  B08B5/02 ,  B08B7/0035

摘要： A dry cleaning device, wherein a pad is moved towards a surface of a wafer, cleaning gas is injected into a space formed between the pad and the wafer to generate a high-speed gas flow along the surface of the wafer whereby particles left on the surface of the wafer are removed with the high-speed gas flow. In addition, in order to assist this physical cleaning action, either a chemical or an electrical cleaning method such as a plasma additionally may be used.

摘要翻译： 一种干洗装置，其中衬垫朝向晶片的表面移动，清洁气体被注入到形成在衬垫和晶片之间的空间中，以沿着晶片的表面产生高速气流，从而颗粒留在 用高速气流除去晶片的表面。 此外，为了辅助这种物理清洁动作，可以使用诸如等离子体的化学或电清洁方法。

公开(公告)号：US06629538B2

公开(公告)日：2003-10-07

申请号：US09811652

申请日：2001-03-20

申请人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Masaru Izawa ,  Shinichi Tachi

发明人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Masaru Izawa ,  Shinichi Tachi

IPC分类号： B08B600

CPC分类号： H01L21/02046 ,  B08B1/00 ,  B08B1/04 ,  B08B5/02 ,  B08B7/0035 ,  H01L21/67028

摘要： A method of dry cleaning surfaces of a semiconductor wafer includes the steps of placing a processed wafer in a vacuum environment and positioning a pad near each of a front surface and a back surface of the wafer. Cleaning gas is injected into a small clearance formed between each pad and the front and rear surfaces to generate a high-speed gas flow along the surface of the wafer. Particles left at the surfaces of the processed wafer are physically cleaned and removed with the high-speed gas flow. In order to assist this physical cleaning action, it is also possible to apply either a chemical cleaning method or an electrical cleaning method under application of plasma.

摘要翻译： 半导体晶片的干式清洗表面的方法包括以下步骤：将处理的晶片放置在真空环境中并将衬垫定位在晶片的前表面和后表面中的每一个周围。 将清洁气体注入到每个垫与前表面和后表面之间形成的小间隙中，以产生沿着晶片表面的高速气流。 留在处理过的晶片表面的颗粒被物理清洗并用高速气流除去。 为了辅助这种物理清洁动作，也可以在施加等离子体的情况下应用化学清洗方法或电气清洁方法。

公开(公告)号：US06475918B1

公开(公告)日：2002-11-05

申请号：US09679348

申请日：2000-10-05

申请人： Masaru Izawa ,  Kenetsu Yokogawa ,  Nobuyuki Negishi ,  Yoshinori Momonoi ,  Shinichi Tachi

发明人： Masaru Izawa ,  Kenetsu Yokogawa ,  Nobuyuki Negishi ,  Yoshinori Momonoi ,  Shinichi Tachi

IPC分类号： H01L2100

CPC分类号： H01J37/32678 ,  H01J37/32422 ,  H01L21/67069 ,  H01L21/76802

摘要： An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O, F or N radicals, gas flow rate or consumption amount of O, F and N on the inner wall surface with etching time to suppress excessive O, F and N which become excessive in the initial stage of etching, the method also including control for the flow rate or the consumption amount based on the result of measurement for plasmas during etching so as to obtain a stable etching shape. Since bowing can be reduced upon fabrication of insulation film hole and insulation film while maintaining the etching rate and the selectivity, finer semiconductor device can be produced easily.

摘要翻译： 一种蚀刻方法，其能够在制造半导体时获得精细的制造形状，特别是制造绝缘膜时的垂直制造形状，该方法包括控制O，F或N自由基的入射量，气体流速或 用蚀刻时间对内壁表面的O，F和N的消耗量进行蚀刻，以抑制在蚀刻的初始阶段过度的过量的O，F和N，该方法还包括基于流量或消耗量的控制 在蚀刻期间等离子体的测量结果，以获得稳定的蚀刻形状。 由于在保持蚀刻速率和选择性的同时，在制造绝缘膜孔和绝缘膜时可以减少弯曲，因此可以容易地制造更细的半导体器件。

公开(公告)号：US06713401B2

公开(公告)日：2004-03-30

申请号：US09939770

申请日：2001-08-28

申请人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Kazunori Tsujimoto ,  Shinichi Tachi

发明人： Kenetsu Yokogawa ,  Yoshinori Momonoi ,  Kazunori Tsujimoto ,  Shinichi Tachi

IPC分类号： H01L2100

CPC分类号： H01L21/67167 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67225

摘要： Disclosed is a method for manufacturing a semiconductor device which efficiently carries out a process on a semiconductor substrate, such as dry etching, and cleaning for removing a foreign matter after the process. The method includes a step of removing a foreign matter by using both an electric action of a plasma generated by plasma generation means and a physical action caused by a frictional stress of a fast gas stream formed by a pad structure which is arranged close to a wafer surface.

摘要翻译： 公开了一种半导体器件的制造方法，该半导体器件能够有效地进行半导体衬底上的处理，例如干法蚀刻，以及在处理之后除去杂质的清洗。 该方法包括通过使用由等离子体产生装置产生的等离子体的电作用和由靠近晶片的衬垫结构形成的快速气流的摩擦应力引起的物理作用来除去异物的步骤 表面。

公开(公告)号：US06573190B1

公开(公告)日：2003-06-03

申请号：US09856264

申请日：2001-05-18

申请人： Masaru Izawa ,  Shinichi Tachi ,  Kenetsu Yokogawa ,  Nobuyuki Negishi ,  Naoyuki Kofuji

发明人： Masaru Izawa ,  Shinichi Tachi ,  Kenetsu Yokogawa ,  Nobuyuki Negishi ,  Naoyuki Kofuji

IPC分类号： H01L2100

CPC分类号： H01L21/32136 ,  H01J37/321 ,  H01J37/3266 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

摘要： A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device. The apparatus and method enables a magnitude of a magnetic field to be cyclically modulated when a substrate to be treated is etch processed. The cyclical modulation may be effected by cyclically modulating a coil current flowing to a solenoid coil.

摘要翻译： 可以在宽范围内均匀稳定地产生高密度等离子体的干蚀刻装置和方法，并且可以应对晶片直径的增加，并使得图案在半导体器件的精细图案的蚀刻处理中更细。 当要处理的衬底被蚀刻处理时，该装置和方法使得可以循环调制磁场的大小。 循环调制可以通过循环调制流向螺线管线圈的线圈电流来实现。

公开(公告)号：US06551445B1

公开(公告)日：2003-04-22

申请号：US09665045

申请日：2000-09-19

申请人： Ken'etsu Yokogawa ,  Yoshinori Momonoi ,  Nobuyuki Negishi ,  Masaru Izawa ,  Shinichi Tachi

发明人： Ken'etsu Yokogawa ,  Yoshinori Momonoi ,  Nobuyuki Negishi ,  Masaru Izawa ,  Shinichi Tachi

IPC分类号： H05H100

CPC分类号： H01J37/32623 ,  H01J37/32678

摘要： A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.

摘要翻译： 平行板ECR等离子体处理系统能够延长能够保持连续，均匀状态的等离子体密度区域。 在该系统中，设置由螺线管线圈和第二磁场形成装置形成的第一磁场形成装置，使得平面板表面上的磁通线的方向分布由 来自第一和第二磁场形成装置的组合磁场由此控制磁场与电磁波的相互作用程度的分布。 该控制确保在高密度等离子体形成条件下的等离子体的均匀性，从而使得能够在宽范围的低至高密度下形成连续的等离子体。 因此，可以实现等离子体处理系统，其确保在宽等离子体条件下的处理，包括在高密度条件下的高速处理。

公开(公告)号：US06579154B2

公开(公告)日：2003-06-17

申请号：US09875025

申请日：2001-06-07

申请人： Seiji Yamamoto ,  Kenetsu Yokogawa ,  Shinichi Tachi

发明人： Seiji Yamamoto ,  Kenetsu Yokogawa ,  Shinichi Tachi

IPC分类号： B24B100

CPC分类号： H01L21/31116 ,  B24B37/04 ,  H01J2237/336 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32136

摘要： The present invention provides a dry chemical-mechanical polishing method to perform etching in efficient manner. The dry chemical-mechanical polishing method comprises the steps of bringing surface of a polishing specimen retained on a specimen stand 114 into contact with a polishing tool while supplying plasma 106 from a plasma source, moving relative positions of the polishing specimen and the polishing tool and then polishing, and planarizing the surface of the polishing specimen, whereby diameter of the polishing specimen is increased to larger than diameter of the polishing tool, for instance, so that at least a part of the surface of the polishing specimen is exposed to an atmosphere of the plasma during polishing operation.

公开(公告)号：US06136214A

公开(公告)日：2000-10-24

申请号：US840647

申请日：1997-04-25

申请人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

发明人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3213 ,  B44C1/22 ,  C23F1/02

CPC分类号： H01J37/32871 ,  H01L21/31116 ,  H01L21/32136

摘要： Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. To accommodate such a problem, an etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce a molecular chemical species such as CF.sub.4, CF.sub.2, CF.sub.3 and C.sub.2 F.sub.4 for etching. This method assures a high etching rate and high selectivity while keeping a process window wide.

摘要翻译： 由于环境污染防治法，PFC（全氟化碳）和HFC（氢氟碳化合物）两种氧化硅和氮化硅膜的蚀刻气体预计将受到有限的使用或将来难以获得。 为了解决这个问题，将含有氟原子的蚀刻气体引入等离子体室。 在进行等离子体蚀刻的区域中，使含氟气体等离子体与固态碳反应，以产生用于蚀刻的分子化学物质如CF4，CF2，CF3和C2F4。 该方法在保持工艺窗口宽的同时确保高蚀刻速率和高选择性。

公开(公告)号：US06511608B1

公开(公告)日：2003-01-28

申请号：US09662162

申请日：2000-09-14

申请人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

发明人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

IPC分类号： H01L213065

CPC分类号： H01J37/32871 ,  H01L21/31116 ,  H01L21/32136

摘要： Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.

摘要翻译： 由于环境污染防治法，PFC（全氟化碳）和HFC（氢氟碳化合物）两种氧化硅和氮化硅膜的蚀刻气体预计将受到有限的使用或将来难以获得。 含有氟原子的蚀刻气体被引入到等离子体室中。 在进行等离子体蚀刻的区域中，使含氟气体等离子体与固态碳反应，以产生分子化学物质如CF4，CF2，CF3和C2F4用于蚀刻。 该方法确保了高蚀刻速率和高选择性，同时保持了工艺窗口宽。

公开(公告)号：US06927173B2

公开(公告)日：2005-08-09

申请号：US10315054

申请日：2002-12-10

申请人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

发明人： Masahito Mori ,  Shinichi Tachi ,  Kenetsu Yokogawa

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/302

CPC分类号： H01J37/32871 ,  H01L21/31116 ,  H01L21/32136

摘要： Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.

摘要翻译： 由于环境污染防治法，PFC（全氟化碳）和HFC（氢氟碳化合物）两种氧化硅和氮化硅膜的蚀刻气体预计将受到有限的使用或将来难以获得。 含有氟原子的蚀刻气体被引入到等离子体室中。 在进行等离子体蚀刻的区域中，使含氟气体等离子体与固态碳反应，以产生分子化学物质，例如CF 4，CF 2， SUB 3，CF 3 3和C 2 F 4 S 3用于蚀刻。 该方法确保了高蚀刻速率和高选择性，同时保持了工艺窗口宽。