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公开(公告)号：US06643893B2
公开(公告)日：2003-11-11
申请号：US09809202
申请日：2001-03-16
IPC分类号： B08B1100
CPC分类号： H01L21/67028 , B08B5/02 , B08B7/0035
摘要： A dry cleaning device, wherein a pad is moved towards a surface of a wafer, cleaning gas is injected into a space formed between the pad and the wafer to generate a high-speed gas flow along the surface of the wafer whereby particles left on the surface of the wafer are removed with the high-speed gas flow. In addition, in order to assist this physical cleaning action, either a chemical or an electrical cleaning method such as a plasma additionally may be used.
摘要翻译： 一种干洗装置，其中衬垫朝向晶片的表面移动，清洁气体被注入到形成在衬垫和晶片之间的空间中，以沿着晶片的表面产生高速气流，从而颗粒留在 用高速气流除去晶片的表面。 此外，为了辅助这种物理清洁动作，可以使用诸如等离子体的化学或电清洁方法。
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公开(公告)号：US06629538B2
公开(公告)日：2003-10-07
申请号：US09811652
申请日：2001-03-20
IPC分类号： B08B600
CPC分类号： H01L21/02046 , B08B1/00 , B08B1/04 , B08B5/02 , B08B7/0035 , H01L21/67028
摘要： A method of dry cleaning surfaces of a semiconductor wafer includes the steps of placing a processed wafer in a vacuum environment and positioning a pad near each of a front surface and a back surface of the wafer. Cleaning gas is injected into a small clearance formed between each pad and the front and rear surfaces to generate a high-speed gas flow along the surface of the wafer. Particles left at the surfaces of the processed wafer are physically cleaned and removed with the high-speed gas flow. In order to assist this physical cleaning action, it is also possible to apply either a chemical cleaning method or an electrical cleaning method under application of plasma.
摘要翻译： 半导体晶片的干式清洗表面的方法包括以下步骤：将处理的晶片放置在真空环境中并将衬垫定位在晶片的前表面和后表面中的每一个周围。 将清洁气体注入到每个垫与前表面和后表面之间形成的小间隙中，以产生沿着晶片表面的高速气流。 留在处理过的晶片表面的颗粒被物理清洗并用高速气流除去。 为了辅助这种物理清洁动作，也可以在施加等离子体的情况下应用化学清洗方法或电气清洁方法。
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公开(公告)号：US06475918B1
公开(公告)日：2002-11-05
申请号：US09679348
申请日：2000-10-05
IPC分类号： H01L2100
CPC分类号： H01J37/32678 , H01J37/32422 , H01L21/67069 , H01L21/76802
摘要： An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O, F or N radicals, gas flow rate or consumption amount of O, F and N on the inner wall surface with etching time to suppress excessive O, F and N which become excessive in the initial stage of etching, the method also including control for the flow rate or the consumption amount based on the result of measurement for plasmas during etching so as to obtain a stable etching shape. Since bowing can be reduced upon fabrication of insulation film hole and insulation film while maintaining the etching rate and the selectivity, finer semiconductor device can be produced easily.
摘要翻译： 一种蚀刻方法，其能够在制造半导体时获得精细的制造形状，特别是制造绝缘膜时的垂直制造形状，该方法包括控制O，F或N自由基的入射量，气体流速或 用蚀刻时间对内壁表面的O，F和N的消耗量进行蚀刻，以抑制在蚀刻的初始阶段过度的过量的O，F和N，该方法还包括基于流量或消耗量的控制 在蚀刻期间等离子体的测量结果，以获得稳定的蚀刻形状。 由于在保持蚀刻速率和选择性的同时，在制造绝缘膜孔和绝缘膜时可以减少弯曲，因此可以容易地制造更细的半导体器件。
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公开(公告)号：US06977229B2
公开(公告)日：2005-12-20
申请号：US10460155
申请日：2003-06-13
IPC分类号： H01L21/304 , H01L21/00 , H01L21/306 , H01L21/311 , H01L21/768 , H01L21/302
CPC分类号： H01L21/0206 , H01L21/02063 , H01L21/02071 , H01L21/31116 , H01L21/31138 , H01L21/67028 , H01L21/76807 , H01L21/76814
摘要： The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means and the physical action due to viscous friction force of high speed gas flow generated by means of a planar pad that is brought close to the main surface of a wafer are applied together for cleaning the main surface of the wafer. After cleaning, the wafer is exposed to plasma of a second gas in the same vacuum chamber and then transferred to the atmosphere.
摘要翻译： 提供本发明以防止半导体器件制造工艺的干洗中的半导体器件的产量降低。 由于等离子体发生装置产生的第一气体的等离子体引起的电作用和化学作用以及由靠近主表面的平板焊接产生的高速气流的粘性摩擦力引起的物理作用 一起施加在一起以清洁晶片的主表面。 在清洁之后，将晶片暴露于相同真空室中的第二气体的等离子体，然后转移到大气中。
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公开(公告)号：US06573190B1
公开(公告)日：2003-06-03
申请号：US09856264
申请日：2001-05-18
IPC分类号： H01L2100
CPC分类号： H01L21/32136 , H01J37/321 , H01J37/3266 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device. The apparatus and method enables a magnitude of a magnetic field to be cyclically modulated when a substrate to be treated is etch processed. The cyclical modulation may be effected by cyclically modulating a coil current flowing to a solenoid coil.
摘要翻译： 可以在宽范围内均匀稳定地产生高密度等离子体的干蚀刻装置和方法，并且可以应对晶片直径的增加，并使得图案在半导体器件的精细图案的蚀刻处理中更细。 当要处理的衬底被蚀刻处理时，该装置和方法使得可以循环调制磁场的大小。 循环调制可以通过循环调制流向螺线管线圈的线圈电流来实现。
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6.发明授权公开(公告)号：US06551445B1
公开(公告)日：2003-04-22
申请号：US09665045
申请日：2000-09-19
IPC分类号： H05H100
CPC分类号： H01J37/32623 , H01J37/32678
摘要： A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.
摘要翻译： 平行板ECR等离子体处理系统能够延长能够保持连续，均匀状态的等离子体密度区域。 在该系统中，设置由螺线管线圈和第二磁场形成装置形成的第一磁场形成装置，使得平面板表面上的磁通线的方向分布由 来自第一和第二磁场形成装置的组合磁场由此控制磁场与电磁波的相互作用程度的分布。 该控制确保在高密度等离子体形成条件下的等离子体的均匀性，从而使得能够在宽范围的低至高密度下形成连续的等离子体。 因此，可以实现等离子体处理系统，其确保在宽等离子体条件下的处理，包括在高密度条件下的高速处理。
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7.发明申请Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开具有降低粒子污染的半导体器件制造装置公开(公告)号：US20110100555A1
公开(公告)日：2011-05-05
申请号：US12987448
申请日：2011-01-10
IPC分类号： C23F1/08 , C23C16/455 , C23C16/52 , C23C16/44
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed.
摘要翻译： 半导体器件制造装置包括处理室，输送室，输送机器人，锁定室以及加热单元或温度调节单元，用于减少通过热电解力将颗粒附着到被处理物质上。 加热单元能够将被处理物质的温度控制为高于处理室或输送室或输送机器人或锁定室的内壁或结构体的温度，将物质输送为 处理。 温度调节单元能够在输送待处理物质时将处理室或输送室或锁定室的内壁或结构体的温度调节为低于待处理物质的温度。
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公开(公告)号：US20090250000A1
公开(公告)日：2009-10-08
申请号：US12193815
申请日：2008-08-19
CPC分类号： H01L21/67201 , Y10T137/85986
摘要： A vacuum processing apparatus capable of attaining compatibility between the decrease for the number of foreign particles deposited on a sample in a lock chamber and improvement of the throughput, in which an open speed controllable valve is disposed and the depressurization speed can be controlled automatically by a controlling computer.
摘要翻译： 一种真空处理装置，其能够获得在锁定室中沉积在样品上的异物的数量的减少与提高打开速度可控阀的通过量之间的相容性，并且可以通过以下步骤自动控制减压速度 控制电脑。
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公开(公告)号：US20080277061A1
公开(公告)日：2008-11-13
申请号：US11835463
申请日：2007-08-08
IPC分类号： H01L21/306 , G06F19/00
CPC分类号： H01L21/02087 , B08B7/0042 , H01L21/67028
摘要： An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm2 in the peak power density.
摘要翻译： 本发明的目的是提供一种晶片边缘清洁器，其能够以低成本和高产量去除附着在被处理物体的外周的不需要的材料。 根据本发明的晶片边缘清洁器用在其中的至少30kW / mm 2的激光束照射附着在待处理物体的后表面外周的沉积材料 峰值功率密度。
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公开(公告)号：US20080223522A1
公开(公告)日：2008-09-18
申请号：US11835455
申请日：2007-08-08
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , H01J37/32091 , H01J37/32935 , H01J37/32963
摘要： The present invention provides a plasma processing chamber mounted with a function capable of determining the state of a temperature rise in a processing chamber even if a thermometer is not mounted in the processing chamber. In a plasma processing apparatus including: a processing chamber for subjecting a sample to be processed to plasma processing; means for supplying the processing chamber with gas; exhaust means for reducing pressure in the processing chamber; a high-frequency power source for generating plasma; and an electrode on which the sample to be processed is placed, there is provided a plasma emission monitor for determining an end point of temperature raise discharge and means for determining an end point of temperature raise discharge, both of which are used for determining an end point of temperature raise discharge performed before the plasma processing.
摘要翻译： 本发明提供了一种等离子体处理室，即使温度计没有安装在处理室中也能够确定处理室中的温度上升的状态。 一种等离子体处理装置，包括：处理室，用于对待处理的样品进行等离子体处理; 用于向处理室供应气体的装置; 用于减少处理室中的压力的排气装置; 用于产生等离子体的高频电源; 和放置有待处理样品的电极，设置有用于确定升温放电终点的等离子体发射监测器和用于确定升温放电终点的装置，两者用于确定终点 在等离子体处理之前进行的升温放电点。
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