公开(公告)号：US06926589B2

公开(公告)日：2005-08-09

申请号：US10105016

申请日：2002-03-22

申请人： Douglas W. Young ,  Brett E. McGrath ,  Yuchun Wang

发明人： Douglas W. Young ,  Brett E. McGrath ,  Yuchun Wang

IPC分类号： B24B21/04 ,  B24B37/04 ,  B24B49/16 ,  B24B1/00

CPC分类号： B24B57/02 ,  B24B21/04 ,  B24B37/013 ,  B24B37/04 ,  B24B49/16

摘要： The present invention relates to methods and apparatus that allow for chemical mechanical polishing using a flexible pad and variable fluid flow for variable polishing.

摘要翻译： 本发明涉及允许使用柔性垫进行化学机械抛光和用于可变抛光的可变流体流的方法和装置。

公开(公告)号：US06857947B2

公开(公告)日：2005-02-22

申请号：US10346425

申请日：2003-01-17

申请人： Yuchun Wang ,  Bernard M. Frey ,  Bulent M. Basol ,  Homayoun Talieh ,  Douglas W. Young ,  Brett E. McGrath ,  Mukesh Desai ,  Efrain Velazquez ,  Tuan Truong

发明人： Yuchun Wang ,  Bernard M. Frey ,  Bulent M. Basol ,  Homayoun Talieh ,  Douglas W. Young ,  Brett E. McGrath ,  Mukesh Desai ,  Efrain Velazquez ,  Tuan Truong

IPC分类号： B24B21/04 ,  B24B21/08 ,  B24B37/013 ,  B24B37/20 ,  B24B49/10 ,  B24B49/16 ,  B24B21/00

CPC分类号： B24B37/013 ,  B24B21/04 ,  B24B21/08 ,  B24B37/205 ,  B24B49/10 ,  B24B49/16

摘要： An apparatus for polishing a workpiece includes a workpiece holder configured to hold the workpiece, a polishing member configured to be positioned adjacent to a face of the workpiece in order to polish the workpiece face with a front side of the polishing member, and a platen having a plurality of pressure zones configured to selectively apply pressure to the polishing member thereby causing the polishing member to contact the workpiece face with selective pressure. In another embodiment, the apparatus includes a pressure controller coupled to the platen and configured to selectively adjust the pressure zones.

摘要翻译： 一种用于抛光工件的装置包括：被配置为保持工件的工件保持器;抛光构件，其构造成邻近工件的表面定位，以便抛光工件面与抛光构件的前侧;以及压板， 多个压力区被配置为选择性地向抛光构件施加压力，从而使抛光构件与选择压力接触工件面。 在另一个实施例中，该装置包括耦合到压板并配置成选择性地调节压力区的压力控制器。

公开(公告)号：US06908374B2

公开(公告)日：2005-06-21

申请号：US10052475

申请日：2002-01-17

申请人： Yuchun Wang ,  Bernard M. Frey ,  Bulent M. Basol ,  Douglas W. Young ,  Homayoun Talieh ,  Efrain Velazquez

发明人： Yuchun Wang ,  Bernard M. Frey ,  Bulent M. Basol ,  Douglas W. Young ,  Homayoun Talieh ,  Efrain Velazquez

IPC分类号： B24B21/04 ,  B24B21/08 ,  B24B37/04 ,  B24B47/04 ,  B24B49/16 ,  B24B49/12

CPC分类号： B24B37/205 ,  B24B21/04 ,  B24B21/08 ,  B24B37/013 ,  B24B37/04 ,  B24B47/04 ,  B24B49/16

摘要： The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical processing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.

摘要翻译： 所描述的方法和系统提供用于材料去除过程（例如在工件上执行的化学机械处理（CMP））的原位端点检测。 在优选实施例中，使用光学检测系统来检测使用CMP去除平面导电层期间的端点。 光学透明的抛光带通过抛光带上的任何点提供端点检测。 一旦检测到端点，就可以使用信号来终止或改变先前已经启动的CMP过程。

公开(公告)号：US08639377B2

公开(公告)日：2014-01-28

申请号：US12267526

申请日：2008-11-07

申请人： Kun Xu ,  Feng Q Liu ,  Yuchun Wang ,  Abraham Ravid ,  Wen-Chiang Tu

发明人： Kun Xu ,  Feng Q Liu ,  Yuchun Wang ,  Abraham Ravid ,  Wen-Chiang Tu

IPC分类号： G06F19/00 ,  F04B19/16 ,  F04D27/02 ,  F04D23/00

CPC分类号： G01B11/0683 ,  B24B37/005 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

摘要： Methods of determining thickness and phase of a GST layer on a semiconductor substrate are described using intensity spectra within the infra-red range. In particular, techniques for using certain transmission at certain frequencies are disclosed for faster thickness and phase determination in an in-line or standalone metrology/monitoring system for CMP processes.

摘要翻译： 使用在红外范围内的强度光谱来描述确定半导体衬底上的GST层的厚度和相位的方法。 特别地，公开了在某些频率下使用某些传输的技术，用于在用于CMP工艺的在线或独立计量/监测系统中更快的厚度和相位确定。

公开(公告)号：US08210900B2

公开(公告)日：2012-07-03

申请号：US12263237

申请日：2008-10-31

申请人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

发明人： Wen-Chiang Tu ,  You Wang ,  Yuchun Wang ,  Lakshmanan Karuppiah

IPC分类号： B24B49/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A method and apparatus for polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.

摘要翻译： 一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。 在一个实施例中，提供了一种处理半导体衬底的方法。 该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率 在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率 从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

公开(公告)号：US20070099552A1

公开(公告)日：2007-05-03

申请号：US11555145

申请日：2006-10-31

申请人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai ,  You Wang ,  Jie Diao ,  Renhe Jia ,  Lakshmanan Karuppiah ,  Robert Ewald

发明人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai ,  You Wang ,  Jie Diao ,  Renhe Jia ,  Lakshmanan Karuppiah ,  Robert Ewald

IPC分类号： B23F21/03

CPC分类号： B24B37/046 ,  B24B27/0023 ,  B24B37/24 ,  B24B37/26 ,  B24D3/34 ,  B82Y30/00

摘要： An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.

摘要翻译： 提供了一种用于处理基板表面的制造和设备。 在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括具有至少部分导电的抛光表面的主体的抛光制品。 电极设置在其间具有介电材料的抛光表面下方。 可以在抛光表面和电介质材料中形成多个孔，以至少部分地将电极暴露于抛光表面。 可以在电极和抛光表面之间设置膜，其可透过离子和电流，以促进电极和抛光表面之间的连续性。

公开(公告)号：US20070066201A1

公开(公告)日：2007-03-22

申请号：US11556011

申请日：2006-11-02

申请人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai

发明人： Liang-Yuh Chen ,  Yuchun Wang ,  Yan Wang ,  Alain Duboust ,  Daniel Carl ,  Ralph Wadensweiler ,  Manoocher Birang ,  Paul Butterfield ,  Rashid Mavliev ,  Stan Tsai

IPC分类号： B23F21/03

CPC分类号： B82Y30/00 ,  B24B37/046 ,  B24B37/24 ,  B24B37/26 ,  B24D3/34

摘要： An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate. A plurality of perforations may be formed in the polishing article for flow of material therethrough. An electrode is also exposed to the polishing surface by at least a portion of the plurality of perforations. The article of manufacture may also include a polishing surface having a plurality of grooves, wherein a portion of the plurality of grooves intersect with a portion of the plurality of perforations.

摘要翻译： 提供了一种用于平坦化基板表面的制造和设备。 在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括抛光制品，所述抛光制品包括具有适于抛光所述衬底的至少部分导电表面的主体。 可以在抛光制品中形成多个穿孔，以使材料流过其中。 电极还通过多个穿孔的至少一部分暴露于抛光表面。 制品还可以包括具有多个凹槽的抛光表面，其中多个凹槽的一部分与多个穿孔的一部分相交。

公开(公告)号：US20050269665A1

公开(公告)日：2005-12-08

申请号：US10861007

申请日：2004-06-04

申请人： Ian Wylie ,  Heinz Busta ,  David Schroeder ,  J. Steckenrider ,  Yuchun Wang

发明人： Ian Wylie ,  Heinz Busta ,  David Schroeder ,  J. Steckenrider ,  Yuchun Wang

IPC分类号： H01L21/48 ,  H01L21/768 ,  H01L21/98 ,  H01L23/34 ,  H01L23/473 ,  H01L25/065 ,  H01L29/00 ,  H01L29/06

CPC分类号： H01L23/473 ,  H01L21/4882 ,  H01L21/76898 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A three-dimensional integrated circuit that provides reduced interconnect signal delay over known 2-dimensional systems. The three-dimensional integrated circuit also allows improved circuit cooling. The three-dimensional integrated circuit comprises two or more electrically connected integrated circuits, separated by a cooling channel.

摘要翻译： 一种三维集成电路，可在已知的二维系统上提供缩短的互连信号延迟。 三维集成电路还可以改善电路冷却。 三维集成电路包括由冷却通道隔开的两个或更多个电连接的集成电路。

公开(公告)号：US06537144B1

公开(公告)日：2003-03-25

申请号：US09505899

申请日：2000-02-17

申请人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24D1100

CPC分类号： B24B37/26 ,  B24B53/017 ,  H01L21/3212

摘要： Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06520840B1

公开(公告)日：2003-02-18

申请号：US09692723

申请日：2000-10-19

申请人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

发明人： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC分类号： B24B100

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.

摘要翻译： 用能够氧化经历平坦化的金属的氧化剂配制CMP浆料，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。 浆料还可包括磨料颗粒，抑制剂，pH调节剂及其组合。