公开(公告)号：US20130083569A1

公开(公告)日：2013-04-04

申请号：US13557332

申请日：2012-07-25

申请人： Yuichi Minoura ,  Naoya Okamoto ,  Toshihide Kikkawa ,  Kozo Makiyama ,  Toshihiro Ohki

发明人： Yuichi Minoura ,  Naoya Okamoto ,  Toshihide Kikkawa ,  Kozo Makiyama ,  Toshihiro Ohki

IPC分类号： H01L21/283 ,  H02M5/458 ,  H01L23/48 ,  H01L21/28 ,  H01L29/78

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66212 ,  H01L29/7787 ,  H01L29/872 ,  H02M1/4225 ,  H02M3/33569 ,  H02M2001/007 ,  Y02B70/126

摘要： A passivation film is formed on a compound semiconductor layered structure, an electrode formation scheduled position for the passivation film is thinned by dry etching, a thinned portion of the passivation film is penetrated by wet etching to form an opening, and a gate electrode is formed on the passivation film so as to embed this opening by an electrode material.

摘要翻译： 在化合物半导体层状结构上形成钝化膜，通过干蚀刻使钝化膜的电极形成预定位置变薄，通过湿蚀刻渗透钝化膜的薄化部分以形成开口，形成栅电极 在钝化膜上，以便通过电极材料嵌入该开口。

公开(公告)号：US09496380B2

公开(公告)日：2016-11-15

申请号：US13328244

申请日：2011-12-16

申请人： Yuichi Minoura ,  Toshihide Kikkawa ,  Toshihiro Ohki

发明人： Yuichi Minoura ,  Toshihide Kikkawa ,  Toshihiro Ohki

IPC分类号： H01L29/778 ,  H01L21/265 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/45

CPC分类号： H01L29/7787 ,  H01L21/2654 ,  H01L29/0603 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/42356 ,  H01L29/42376 ,  H01L29/452 ,  H01L29/66462

摘要： At least one kind of impurity selected from, for example, Fe, C, B, Ti, Cr is introduced into at least a buffer layer of a compound semiconductor layered structure from a rear surface of the compound semiconductor layered structure to make a resistance value of the buffer layer high.

摘要翻译： 从化合物半导体层叠结构的背面，至少从化合物半导体层叠结构体的缓冲层中导入至少一种选自例如Fe，C，B，Ti，Cr的杂质，形成电阻值 的缓冲层高。

公开(公告)号：US20120217543A1

公开(公告)日：2012-08-30

申请号：US13328244

申请日：2011-12-16

申请人： Yuichi MINOURA ,  Toshihide Kikkawa ,  Toshihiro Ohki

发明人： Yuichi MINOURA ,  Toshihide Kikkawa ,  Toshihiro Ohki

IPC分类号： H01L29/06 ,  H01L21/22

CPC分类号： H01L29/7787 ,  H01L21/2654 ,  H01L29/0603 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/42356 ,  H01L29/42376 ,  H01L29/452 ,  H01L29/66462

摘要： At least one kind of impurity selected from, for example, Fe, C, B, Ti, Cr is introduced into at least a buffer layer of a compound semiconductor layered structure from a rear surface of the compound semiconductor layered structure to make a resistance value of the buffer layer high.

摘要翻译： 从化合物半导体层叠结构的背面，至少从化合物半导体层叠结构体的缓冲层中导入至少一种选自例如Fe，C，B，Ti，Cr的杂质，形成电阻值 的缓冲层高。

公开(公告)号：US09276100B2

公开(公告)日：2016-03-01

申请号：US13294740

申请日：2011-11-11

申请人： Hiroshi Endo ,  Toshihiro Ohki ,  Toshihide Kikkawa

发明人： Hiroshi Endo ,  Toshihiro Ohki ,  Toshihide Kikkawa

IPC分类号： H01L29/78 ,  H01L29/778 ,  H01L29/423 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66462 ,  H01L29/7839 ,  H01L2224/0603 ,  H01L2224/48247 ,  H01L2224/48257

摘要： A semiconductor device includes a first semiconductor layer disposed over a substrate, a second semiconductor layer disposed over the first semiconductor layer, a gate recess disposed, through removal of a part of or all the second semiconductor layer, in a predetermined region over the first semiconductor layer, an insulating film disposed over the gate recess and the second semiconductor layer, a gate electrode disposed over the gate recess with the insulating film therebetween, and a source electrode and a drain electrode disposed over the first semiconductor layer or the second semiconductor layer, whereby a central portion of the gate recess is higher than a peripheral portion of the gate recess.

摘要翻译： 半导体器件包括设置在衬底上的第一半导体层，设置在第一半导体层上的第二半导体层，通过在第一半导体上的预定区域中去除一部分或全部第二半导体层而设置的栅极凹槽 设置在所述栅极凹部和所述第二半导体层上的绝缘膜，设置在所述栅极凹部上方的绝缘膜的栅电极，以及设置在所述第一半导体层或所述第二半导体层上的源电极和漏电极， 从而栅极凹部的中心部分比栅极凹部的周边部分高。

公开(公告)号：US20130105810A1

公开(公告)日：2013-05-02

申请号：US13613158

申请日：2012-09-13

申请人： Masato Nishimori ,  Toshihiro Ohki ,  Toshihide Kikkawa

发明人： Masato Nishimori ,  Toshihiro Ohki ,  Toshihide Kikkawa

IPC分类号： H01L29/20 ,  H01L29/06 ,  H01L21/20

CPC分类号： H01L29/66462 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/7787 ,  H03F1/3247 ,  H03F3/189 ,  H03F3/245

摘要： A compound semiconductor device includes: a first compound semiconductor layer in which carriers are formed; a second compound semiconductor layer, provided above the first compound semiconductor layer, to supply the carriers; and a third compound semiconductor layer provided above the second compound semiconductor layer, wherein the third compound semiconductor layer includes a area that has a carrier concentration higher than a carrier concentration of the second compound semiconductor layer.

摘要翻译： 化合物半导体器件包括：形成载流子的第一化合物半导体层; 设置在所述第一化合物半导体层上方的第二化合物半导体层，以供应所述载体; 以及设置在所述第二化合物半导体层上方的第三化合物半导体层，其中所述第三化合物半导体层包括载流子浓度高于所述第二化合物半导体层的载流子浓度的区域。

公开(公告)号：US08426260B2

公开(公告)日：2013-04-23

申请号：US13294726

申请日：2011-11-11

申请人： Toyoo Miyajima ,  Toshihide Kikkawa ,  Kenji Imanishi ,  Toshihiro Ohki ,  Masahito Kanamura

发明人： Toyoo Miyajima ,  Toshihide Kikkawa ,  Kenji Imanishi ,  Toshihiro Ohki ,  Masahito Kanamura

IPC分类号： H01L21/338 ,  H01L29/66

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7787

摘要： A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.

摘要翻译： 化合物半导体器件包括：形成在衬底上的电子传输层; 形成在电子传输层上的电子供应层; 以及形成在所述电子供给层上的盖层; 盖层包括含有GaN的第一化合物半导体层; 含有AlN的第二化合物半导体层，其形成在所述第一化合物半导体层上; 含有GaN的第三化合物半导体层，其形成在所述第二化合物半导体层上; 以及第一AlGaN含有层和第二含AlGaN的层中的至少一个，其中形成在第一化合物半导体层和第二化合物半导体层之间的第一AlGaN含有层，并且Al含量朝向第​​二化合物半导体层增加 并且形成在第二化合物半导体层和第三化合物半导体层之间的第二AlGaN含量层和Al含量朝向第​​二化合物半导体层增加。

公开(公告)号：US20120146097A1

公开(公告)日：2012-06-14

申请号：US13294740

申请日：2011-11-11

申请人： Hiroshi ENDO ,  Toshihiro Ohki ,  Toshihide Kikkawa

发明人： Hiroshi ENDO ,  Toshihiro Ohki ,  Toshihide Kikkawa

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66462 ,  H01L29/7839 ,  H01L2224/0603 ,  H01L2224/48247 ,  H01L2224/48257

摘要： A semiconductor device includes a first semiconductor layer disposed over a substrate, a second semiconductor layer disposed over the first semiconductor layer, a gate recess disposed, through removal of a part of or all the second semiconductor layer, in a predetermined region over the first semiconductor layer, an insulating film disposed over the gate recess and the second semiconductor layer, a gate electrode disposed over the gate recess with the insulating film therebetween, and a source electrode and a drain electrode disposed over the first semiconductor layer or the second semiconductor layer, whereby a central portion of the gate recess is higher than a peripheral portion of the gate recess.

摘要翻译： 半导体器件包括设置在衬底上的第一半导体层，设置在第一半导体层上的第二半导体层，通过在第一半导体上的预定区域中去除一部分或全部第二半导体层而设置的栅极凹槽 设置在所述栅极凹部和所述第二半导体层上的绝缘膜，设置在所述栅极凹部上方的绝缘膜的栅电极，以及设置在所述第一半导体层或所述第二半导体层上的源电极和漏电极， 从而栅极凹部的中心部分比栅极凹部的周边部分高。

公开(公告)号：US08278688B2

公开(公告)日：2012-10-02

申请号：US12639539

申请日：2009-12-16

申请人： Toshihiro Ohki ,  Toshihide Kikkawa

发明人： Toshihiro Ohki ,  Toshihide Kikkawa

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/66462

摘要： A compound semiconductor device includes a carrier transit layer including GaN formed over a substrate; a carrier supply layer including GaN formed over the carrier transit layer; a source electrode and a drain electrode formed over the carrier supply layer; a first compound semiconductor layer including N in which a first opening is formed and that is located between the source electrode and the drain electrode over the carrier supply layer; a gate electrode extending from within the first opening to above the first compound semiconductor layer; and an insulator layer having a second opening that is smaller than the first opening, and insulating the gate electrode and the first compound semiconductor layer within the first opening. The gate electrode extends from within the second opening to above the first compound semiconductor layer.

摘要翻译： 化合物半导体器件包括在衬底上形成的包含GaN的载流子迁移层; 载体供给层，包括在载流子迁移层上形成的GaN; 形成在载体供给层上的源电极和漏电极; 第一化合物半导体层，其包括N，其中形成有第一开口，并且位于载体供给层之间的源电极和漏电极之间; 栅电极，其从所述第一开口内延伸到所述第一化合物半导体层的上方; 以及具有比第一开口小的第二开口的绝缘体层，并且使第一开口内的栅电极和第一化合物半导体层绝缘。 栅电极从第二开口延伸到第一化合物半导体层之上。

公开(公告)号：US20120205662A1

公开(公告)日：2012-08-16

申请号：US13357901

申请日：2012-01-25

申请人： Norikazu Nakamura ,  Shirou Ozaki ,  Masayuki Takeda ,  Toyoo Miyajima ,  Toshihiro Ohki ,  Masahito Kanamura ,  Kenji Imanishi ,  Toshihide Kikkawa ,  Keiji Watanabe

发明人： Norikazu Nakamura ,  Shirou Ozaki ,  Masayuki Takeda ,  Toyoo Miyajima ,  Toshihiro Ohki ,  Masahito Kanamura ,  Kenji Imanishi ,  Toshihide Kikkawa ,  Keiji Watanabe

IPC分类号： H01L29/20 ,  H01L21/336

CPC分类号： H01L29/66462 ,  H01J37/32055 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32669 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/0603 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4903

摘要： A semiconductor device includes: a semiconductor layer formed over a substrate; an insulating film formed over the semiconductor layer; and an electrode formed over the insulating film, wherein the insulating film includes an amorphous film including carbon.

摘要翻译： 半导体器件包括：形成在衬底上的半导体层; 形成在所述半导体层上的绝缘膜; 以及形成在所述绝缘膜上的电极，其中所述绝缘膜包括包含碳的非晶膜。

公开(公告)号：US20120091522A1

公开(公告)日：2012-04-19

申请号：US13276521

申请日：2011-10-19

申请人： Shirou OZAKI ,  Masahito Kanamura ,  Norikazu Nakamura ,  Toyoo Miyajima ,  Masayuki Takeda ,  Keiji Watanabe ,  Toshihide Kikkawa ,  Kenji Imanishi ,  Toshihiro Ohki ,  Tadahiro Imada

发明人： Shirou OZAKI ,  Masahito Kanamura ,  Norikazu Nakamura ,  Toyoo Miyajima ,  Masayuki Takeda ,  Keiji Watanabe ,  Toshihide Kikkawa ,  Kenji Imanishi ,  Toshihiro Ohki ,  Tadahiro Imada

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/772

CPC分类号： H01L29/517 ,  H01L21/0228 ,  H01L23/291 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition.

摘要翻译： 半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上的第二半导体层，形成在第二半导体层上的源电极和漏电极，形成在第二半导体层上的绝缘膜，栅极 形成在绝缘膜上的电极，以及覆盖绝缘膜的保护膜，保护膜通过热CVD，热ALD或真空气相沉积形成。