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公开(公告)号：US5393444A
公开(公告)日：1995-02-28
申请号：US112529
申请日：1993-08-27
申请人： Yuji Asai , Osamu Imai
发明人： Yuji Asai , Osamu Imai
摘要： A piezoelectric semiconductor is a single crystal composed mainly of ZnO having properties such as electrical conductivity of 10.sup.-11 .about.10.sup.-3 1/.OMEGA..multidot.cm suitable for use as an acoustoelectric element, by adding a given amount of H.sub.2 O.sub.2 to the alkali solvent, or by using NH.sub.4 OH in the alkali solvent, or by doping the ZnO single crystal with Li or a trivalent metal. The piezoelectric semiconductor can be suitably used as a ultrasonic transducer material of acoustoelectric type and can also be used as a material for ultrasonic amplification, an surface acoustic wave filter, a piezoelectric transducer, a fluorescent material for emitting a low-velocity electron beam, etc.
摘要翻译： 压电半导体是通过向碱性溶剂中添加给定量的H 2 O 2而主要由ZnO组成的单晶，其具有诸如10-11DIFFERENCE 10-3 1 / OMEGA xcm的导电性，可以用作声电元件，或者 通过在碱溶剂中使用NH 4 OH，或者用Li或三价金属掺杂ZnO单晶。 压电半导体可以适当地用作声电型的超声换能器材料，并且还可以用作超声波放大的材料，表面声波滤波器，压电换能器，用于发射低速电子束的荧光材料等 。
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公开(公告)号：US06599603B1
公开(公告)日：2003-07-29
申请号：US09673955
申请日：2000-10-24
IPC分类号： C30B2906
CPC分类号： C30B29/06 , C30B15/00 , H01L21/3225 , Y10T428/21
摘要： The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer includes void defects inside the wafer, a maximum value of a ratio between long side length L1 and short side length L2 (L1/L2) in an optional rectangle circumscribed the void defect image projected on an optional {110} plane is 2.5 or more, and the silicon wafer including rod-like void defects and/or plate-like void defects inside the wafer, wherein a void defect density of the silicon wafer at a depth of from the wafer surface to at least 0.5 &mgr;m after the heat treatment is ½ or less than that of inside the wafer. According to this, the silicon wafer, which is suitable for expanding reducing effect of void defects by heat treatment up to a deeper region, can be obtained.
摘要翻译： 本发明提供了一种CZ硅晶片，其中晶片在其内部包括棒状空隙缺陷和/或板状空隙缺陷，以及CZ硅晶片，其中硅晶片包括晶片内的空隙，其最大值 在可选择的{110}平面上投影的空隙缺陷图像的任意矩形中的长边长L1和短边长L2之间的比率（L1 / L2）为2.5以上，硅晶片包括棒状空隙， /或晶片内的板状空隙缺陷，其中在晶片表面的深度处的硅晶片的空隙缺陷密度在热处理之后至少为0.5微米的半孔缺陷密度为晶片内部的1/2以下。 据此，可以获得适合于通过热处理直到更深的区域来减少空隙缺陷的效果的硅晶片。
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公开(公告)号：US4933659A
公开(公告)日：1990-06-12
申请号：US362282
申请日：1989-06-06
申请人： Osamu Imai , Koichi Umemoto
发明人： Osamu Imai , Koichi Umemoto
IPC分类号： C04B35/453 , H01C7/10 , H01C7/102 , H01C7/112
CPC分类号： H01C7/102 , H01C7/112 , Y10T29/49099
摘要： A voltage non-linear resistor having lightning discharge current withstanding capability, switching surge current withstanding capability, and voltage non-linear index .alpha., including a resistor element body consisting essentially of zinc oxide, and a side highly resistive layer composed of a zinc silicate phase consisting essentially of Zn.sub.2 SiO.sub.4 and a spinel phase consisting essentially of Zn.sub.7 Sb.sub.2 O.sub.12 arranged on a side surface of the resistor element body, can be attained, having a porosity of the resistor element body of 2% or less, zinc silicate particles existing continuously in the side highly resistive layer, and a porosity of 10% or less in a region of the side highly resistive layer within 30 .mu.m or less from the resistor element body. A method of producing the voltage non-linear resistor is also provided.
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公开(公告)号：US20080200522A1
公开(公告)日：2008-08-21
申请号：US12105779
申请日：2008-04-18
申请人： Masayuki Morita , Osamu Imai
发明人： Masayuki Morita , Osamu Imai
摘要： The present invention provides a composition for controlling a house insect pest, such as termites, ants or cockroaches, which comprises, as active ingredients, at least two compounds selected from the group consisting of (a) a certain pyridine compound, (b) a benzoylurea compound, (c) a pyrethroid compound and (d) a certain hydrazone compound; and a composition for controlling a house insect pest, which comprises, as an active ingredient, a certain hydrazone compound.
摘要翻译： 本发明提供了一种用于防治诸如白蚁，蚂蚁或蟑螂的房屋虫害害虫的组合物，其包含选自以下的至少两种化合物作为活性成分：（a）某种吡啶化合物，（b） 苯甲酰脲化合物，（c）拟除虫菊酯化合物和（d）某种腙化合物; 以及用于控制家蝇害虫的组合物，其包含某种腙化合物作为活性成分。
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5.发明申请Composition for controlling house insect pest and method for controlling house insect pest 审中-公开防治虫害害虫组成及防治虫害的方法公开(公告)号：US20050215597A1
公开(公告)日：2005-09-29
申请号：US10504158
申请日：2003-02-18
申请人： Masayuki Morita , Osamu Imai
发明人： Masayuki Morita , Osamu Imai
IPC分类号： A01N43/40 , A01N3/00 , A01N25/04 , A01N25/12 , A01N35/10 , A01N37/52 , A01N47/24 , A01N47/34 , A01N53/00 , A01N53/06
摘要： The present invention provides a composition for controlling a house insect pest, such as termites, ants or cockroaches, which comprises, as active ingredients, at least two compounds selected from the group consisting of (a) a certain pyridine compound, (b) a benzoylurea compound, (c) a pyrethroid compound and (d) a certain hydrazone compound; and a composition for controlling a house insect pest, which comprises, as an active ingredient, a certain hydrazone compound.
摘要翻译： 本发明提供了一种用于防治诸如白蚁，蚂蚁或蟑螂的房屋虫害害虫的组合物，其包含选自以下的至少两种化合物作为活性成分：（a）某种吡啶化合物，（b） 苯甲酰脲化合物，（c）拟除虫菊酯化合物和（d）某种腙化合物; 以及用于控制家蝇害虫的组合物，其包含某种腙化合物作为活性成分。
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公开(公告)号：US06599647B2
公开(公告)日：2003-07-29
申请号：US10036108
申请日：2001-12-26
申请人： Noriyasu Oguri , Osamu Imai , Hironori Suzuki
发明人： Noriyasu Oguri , Osamu Imai , Hironori Suzuki
IPC分类号： B32B900
CPC分类号： C04B7/32 , C04B28/06 , C04B2103/302 , C04B2111/00068 , C04B2111/92 , C04B24/223 , C04B24/2641 , C04B7/527
摘要： Alumina cement mortar is used as a source material for a kneaded cement cured body for joining hardware onto an insulator body, whereby the insulator can maintain high initial and long term mechanical strength and high electrical strength over a long period of time, and the curing time for forming the cured body is shortened to reduce the cost of producing the insulator. The alumina cement mortar is formed by kneading a mixture of alumina cement particles having a specific surface area of at least 3500 cm2/g, a polymer-steric-hindrance type water reducing agent, an aggregate, and water, or an alumina cement mortar is obtained by kneading a mixture of alumina cement particles having an amorphous phase on an outer peripheral surface of particles and having a specific surface area of at least 3500 cm2/g, a water reducing agent, an aggregate, and water.
摘要翻译： 氧化铝水泥砂浆用作用于将五金件接合到绝缘体上的捏合水泥固化体的源材料，由此绝缘体可以长时间保持高的初期和长期机械强度和高电强度，并且固化时间 缩短了固化体的形成，降低了绝缘体的制造成本。 氧化铝水泥砂浆通过捏合具有至少3500cm 2 / g的比表面积的氧化铝粘结剂颗粒，聚合物 - 空间位阻型减水剂，聚集体和水，或氧化铝水泥砂浆的混合物形成 通过将具有非晶相的氧化铝水泥颗粒的混合物在颗粒的外周表面上混合并具有至少3500cm 2 / g的比表面积，减水剂，骨料和水来获得。
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公开(公告)号：US4861799A
公开(公告)日：1989-08-29
申请号：US102855
申请日：1987-09-30
申请人： Takahiro Haga , Tadaaki Toki , Toru Koyanagi , Yasuhiro Fujii , Kiyomitsu Yoshida , Osamu Imai
发明人： Takahiro Haga , Tadaaki Toki , Toru Koyanagi , Yasuhiro Fujii , Kiyomitsu Yoshida , Osamu Imai
IPC分类号： A01N43/40 , A01N47/34 , A01N47/36 , A01P7/04 , C07C275/54 , C07D213/64 , C07D213/643 , C07D213/70 , C07D213/74 , C07D213/75 , C07D333/38
CPC分类号： C07D213/643 , A01N47/34 , A01N47/36 , C07C275/54 , C07D213/70 , C07D213/74 , C07D213/75 , C07D333/38
摘要： A benzoylurea compound having the formula: ##STR1## wherein each of X.sub.1 and X.sub.2 is a hydrogen atom, a halogen atom or a methyl group, provided that X.sub.1 and X.sub.2 are not simultaneously hydrogen atoms, Y is independently a hydrogen atom, a halogen atom, an alkyl group which may be substituted by halogen, a --CO.sub.2 R.sub.1 group wherein R.sub.1 is a hydrogen atom, a cation or an alkyl group, or a --OR.sub.1 group wherein R.sub.1 is as defined above, A.sub.1 is .dbd.N--or ##STR2## wherein Y is as defined above, W is an oxygen atom, a sulfur atom or ##STR3## wherein R.sub.1 is as defined above, k is an integer of from 1 to 3, l is 0 or 1, and Ar is ##STR4## wherein Z is independently a hydrogen atom, a halogen atom, an alkyl group which may be substituted by halogen, an alkoxy group which may be substituted by halogen, a nitro group, a cyano group or a --S(O).sub.n R.sub.2 group wherein R.sub.2 is an alkyl group which may be substituted by halogen and n is 0, 1 or 2, A.sub.2 is --S--, ##STR5## wherein Z is as defined above, or ##STR6## wherein Z is as defined above, and m is an integer of from 1 to 3, or a salt thereof.
摘要翻译： 具有下式的苯甲酰脲化合物：其中X1和X2各自为氢原子，卤素原子或甲基，条件是X1和X2不同时为氢原子，Y独立地为氢原子， 卤素原子，可以被卤素取代的烷基，其中R 1是氢原子的-CO 2 R 1基团，阳离子或烷基或-OR 1基团，其中R 1如上所定义，A 1 = N-或 其中Y如上所定义，W是氧原子，硫原子或其中R 1如上定义，k是1至3的整数，l是0或1，Ar是< 其中Z独立地为氢原子，卤素原子，可被卤素取代的烷基，可被卤素取代的烷氧基，硝基，氰基或-S（O）nR 2基团） 其中R 2是可以被卤素取代的烷基，n是0,1或2，A 2是-S-，其中Z如上所定义，或者其中Z如上定义 m为1〜3的整数，或其盐。
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公开(公告)号：US20140246163A1
公开(公告)日：2014-09-04
申请号：US14241214
申请日：2012-09-04
IPC分类号： B22D18/02
CPC分类号： B22D18/02 , B22D19/00 , B22D19/08 , B22D39/02 , C23C6/00 , H01L21/67092 , H01L21/76898
摘要： The present invention relates to a metal filling apparatus which can minimize the thickness of a layer of excess metal formed on an object to be processed after processing and which is capable of filling a molten metal into a minute space (via, through hole) formed to have an opening on the object to be processed. A metal filling apparatus 1 comprises a holding table H holding a semiconductor wafer, a piston P provided facing the holding table H and having a metallic pressing portion formed on the side facing the holding table H, a pressing mechanism 5 provided to be capable of pressing the piston P onto the semiconductor wafer K held on the holding table H and other components, and an airtight processing chamber 2 is formed by the semiconductor wafer held on the holding table H, the housing C and the piston P. Further, the metal filling apparatus 1 comprises a pressure reducing mechanism 3 reducing the pressure inside the processing chamber 2 by exhausting a gas inside the processing chamber 2, a molten metal supply mechanism 4 supplying a molten metal M into the processing chamber 2, and a pressurized-gas supply mechanism 7 supplying an inert gas into the processing chamber 2.
摘要翻译： 金属填充装置技术领域本发明涉及一种金属填充装置，其能够使加工后的待处理物体上形成的多余金属的厚度最小化，并且能够将熔融金属填充到形成为 在待处理对象上有一个开口。 金属填充装置1包括保持半导体晶片的保持台H，与保持台H相对设置的具有形成在面向保持台H的一侧的金属按压部的活塞P，设置成能够按压的按压机构5 通过保持在保持台H，壳体C和活塞P上的半导体晶片形成保持在保持台H上的半导体晶片K上的活塞P和其他部件以及气密处理室2。 设备1包括减压机构3，通过排出处理室2内的气体来减少处理室2内的压力，将熔融金属M供应到处理室2中的熔融金属供给机构4和加压气体供给机构 7将惰性气体供应到处理室2中。
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公开(公告)号：US4906964A
公开(公告)日：1990-03-06
申请号：US319108
申请日：1989-03-06
申请人： Osamu Imai , Ritsu Sato
发明人： Osamu Imai , Ritsu Sato
IPC分类号： C04B35/453 , H01C7/10 , H01C7/112
CPC分类号： H01C7/112
摘要： An improved voltage non-linear sintered resistor which includes zinc oxide, bismuth oxide and at least one metal oxide additive selected from the group consisting of antimony oxide, silicon oxide, and mixtures thereof. The sintered resistor includes at least two crystalline phases including .alpha. and .delta. crystalline phases of bismuth oxide and has a quantity ratio of .alpha./.delta. crystalline phases of bismuth oxide of about 0.1-0.8.
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公开(公告)号：US4855708A
公开(公告)日：1989-08-08
申请号：US219382
申请日：1988-07-15
申请人： Masami Nakata , Osamu Imai
发明人： Masami Nakata , Osamu Imai
CPC分类号： H01C7/102
摘要： A voltage non-linear resistor having a voltage non-linear resistance element consisting mainly of zinc oxides and a high resistance layer including a zinc silicate phase consisting mainly of Zn.sub.2 SiO.sub.4 and a spinel phase consisting mainly of Zn.sub.7 Sb.sub.2 O.sub.12 has a continuous zinc silicate phase in which zinc silicate particles are arranged continuously. Therefore, in the voltage non-linear resistor according to the invention, a flashover can be preferably prevented, and thus a stable electric characteristics especially lightning discharge current withstanding capability can be obtained.
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