摘要:
A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.
摘要:
A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.
摘要:
An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.
摘要:
A resistance calculation activator determines whether or not an electric car is stopped on the basis of a drive command signal and an external signal, and activates a resistance calculator if a powering command is input as the drive command when it is determined that the electric car is stopped. The activated resistance calculator computes, within a resistance calculation period, a resistance value of an AC motor that produces driving force for the electric car, on the basis of a d-axis voltage command value and a d-axis current value supplied to the AC motor.
摘要:
An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the buffer layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.
摘要:
A control apparatus for an AC rotating machine that can reliably and stably start up an AC rotating machine, particularly a synchronous motor using a permanent magnet, in position-sensorless vector control thereof, includes: a steady speed calculator that calculates, during steady state control of the AC rotating machine, a rotation angular frequency of the AC rotating machine based on an AC current and voltage commands; and a start-up speed calculator that calculates, during start-up control within a predetermined period after the AC rotating machine has been started up, the rotation angular frequency of the AC rotating machine based on the AC current and the voltage commands. The control apparatus corrects during the start-up control current commands so that the AC voltage amplitude of the voltage commands will be a constant value not more than the maximum output voltage of a power converter.
摘要:
A control apparatus for an AC rotating machine that can reliably and stably start up an AC rotating machine, particularly a synchronous motor using a permanent magnet, in position-sensorless vector control thereof, includes: a steady speed calculator that calculates, during steady state control of the AC rotating machine, a rotation angular frequency of the AC rotating machine based on an AC current and voltage commands; and a start-up speed calculator that calculates, during start-up control within a predetermined period after the AC rotating machine has been started up, the rotation angular frequency of the AC rotating machine based on the AC current and the voltage commands. The control apparatus corrects during the start-up control current commands so that the AC voltage amplitude of the voltage commands will be a constant value not more than the maximum output voltage of a power converter.
摘要:
An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.
摘要:
A power conversion control device includes a modulation-wave generating unit generating a modulation wave based on output voltage phase angle command and modulation factor, a carrier-wave generating unit that, in a case of non-overmodulation state, generates a triangular wave or saw-tooth wave as the carrier wave, and, in a case of overmodulation state, generates, as the carrier wave, a signal fixed to −1 in a first section that is a predetermined range centering on timing corresponding to a peak position of the modulation wave, generates, as the carrier wave, a signal fixed to +1 in a second section obtained by shifting the first section by a half cycle of the modulation wave, and generates, as the carrier wave, a triangular wave or saw-tooth wave in remaining third section, and a comparing unit that compares the carrier wave and the modulation wave and generates a switching signal.
摘要:
A control apparatus for an AC rotary machine includes: a current detection section detecting current from a power converter to the AC rotary machine; and a control section generating a three-phase AC voltage instruction to the power converter, based on current detected by the current detection section and a torque instruction. The control section includes: an observer calculating a magnetic flux estimated value of the AC rotary machine, based on detected current and the voltage instruction; a current instruction calculation unit calculating current instruction values on rotational two axes, based on the torque instruction and the magnetic flux estimated value from the observer; and a voltage instruction calculation unit calculating the voltage instruction, based on the current instruction values from the current instruction calculation unit and the magnetic flux estimated value from the observer.