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公开(公告)号：US08299600B2
公开(公告)日：2012-10-30
申请号：US12619561
申请日：2009-11-16
IPC分类号： H01L23/48
CPC分类号： H01L23/4334 , H01L23/49524 , H01L23/49562 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/91 , H01L2224/0603 , H01L2224/29111 , H01L2224/2919 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4847 , H01L2224/48599 , H01L2224/73215 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/85013 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device is provided with improved reliability. A semiconductor chip is mounted over a chip mounting portion of a lead frame via solder. A metal plate is arranged over a source pad of the semiconductor chip and a lead portion of a lead frame via solder. A solder reflow process is performed thereby to bond the semiconductor chip over the chip mounting portion with a solder, and to bond the metal plate to the source pad and the lead portion with the other solders. The lead frame is formed of a copper alloy, and thus has its softening temperature higher than the temperature of the solder reflow process. The metal plate is formed of oxygen-free copper, and has its softening temperature lower than the temperature of the solder reflow process, whereby the metal plate is softened in the solder reflow process. Thereafter, a gate pad electrode of the semiconductor chip is coupled to a lead portion via the wire, a sealing resin portion is formed, and then the lead frame is cut.
摘要翻译： 半导体器件具有改进的可靠性。 通过焊料将半导体芯片安装在引线框架的芯片安装部分上。 金属板通过焊料布置在半导体芯片的源极焊盘和引线框架的引线部分的上方。 进行焊料回流工艺，从而通过焊料将半导体芯片连接在芯片安装部分上，并将金属板与其它焊料接合到源极焊盘和引线部分。 引线框架由铜合金形成，因此其软化温度高于焊料回流工艺的温度。 金属板由无氧铜形成，其软化温度低于焊锡回流工序的温度，由此金属板在回流焊工艺中软化。 此后，半导体芯片的栅极焊盘电极通过导线连接到引线部分，形成密封树脂部分，然后引线框架被切割。
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公开(公告)号：US08367479B2
公开(公告)日：2013-02-05
申请号：US12718200
申请日：2010-03-05
申请人： Hiroyuki Nakamura , Akira Muto , Nobuya Koike , Atsushi Nishikizawa , Yukihiro Sato , Katsuhiko Funatsu
发明人： Hiroyuki Nakamura , Akira Muto , Nobuya Koike , Atsushi Nishikizawa , Yukihiro Sato , Katsuhiko Funatsu
IPC分类号： H01L23/495 , H01L21/60
CPC分类号： H01L23/495 , H01L21/4828 , H01L21/56 , H01L21/565 , H01L23/3107 , H01L23/49503 , H01L23/49541 , H01L23/49548 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/2919 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/484 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2224/85439 , H01L2224/85455 , H01L2224/92247 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2924/3512 , H01L2224/05599
摘要： To prevent, in a resin-sealed type semiconductor package, generation of cracks in a die bonding material used for mounting of a semiconductor chip. A semiconductor chip is mounted over the upper surface of a die pad via a die bonding material, followed by sealing with an insulating resin. The top surface of the die pad to be brought into contact with the insulating resin is surface-roughened, while the bottom surface of the die pad and an outer lead portion are not surface-roughened.
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公开(公告)号：US08994159B2
公开(公告)日：2015-03-31
申请号：US13740354
申请日：2013-01-14
申请人： Hiroyuki Nakamura , Akira Muto , Nobuya Koike , Atsushi Nishikizawa , Yukihiro Sato , Katsuhiko Funatsu
发明人： Hiroyuki Nakamura , Akira Muto , Nobuya Koike , Atsushi Nishikizawa , Yukihiro Sato , Katsuhiko Funatsu
IPC分类号： H01L23/495 , H01L21/48 , H01L21/56 , H01L23/31 , H01L23/00
CPC分类号： H01L23/495 , H01L21/4828 , H01L21/56 , H01L21/565 , H01L23/3107 , H01L23/49503 , H01L23/49541 , H01L23/49548 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/2919 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/484 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2224/85439 , H01L2224/85455 , H01L2224/92247 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2924/3512 , H01L2224/05599
摘要： To prevent, in a resin-sealed type semiconductor package, generation of cracks in a die bonding material used for mounting of a semiconductor chip. A semiconductor chip is mounted over the upper surface of a die pad via a die bonding material, followed by sealing with an insulating resin. The top surface of the die pad to be brought into contact with the insulating resin is surface-roughened, while the bottom surface of the die pad and an outer lead portion are not surface-roughened.
摘要翻译： 为了防止在树脂密封型半导体封装中产生用于安装半导体芯片的芯片接合材料中的裂纹。 半导体芯片通过芯片接合材料安装在芯片焊盘的上表面上，然后用绝缘树脂密封。 要与绝缘树脂接触的芯片焊盘的顶表面被粗糙化，而芯片焊盘的底表面和外部引线部分没有被表面粗糙化。
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公开(公告)号：US20100123240A1
公开(公告)日：2010-05-20
申请号：US12619561
申请日：2009-11-16
CPC分类号： H01L23/4334 , H01L23/49524 , H01L23/49562 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/91 , H01L2224/0603 , H01L2224/29111 , H01L2224/2919 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/40095 , H01L2224/40245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4847 , H01L2224/48599 , H01L2224/73215 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/85013 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device is provided with improved reliability. A semiconductor chip is mounted over a chip mounting portion of a lead frame via solder. A metal plate is arranged over a source pad of the semiconductor chip and a lead portion of a lead frame via solder. A solder reflow process is performed thereby to bond the semiconductor chip over the chip mounting portion with a solder, and to bond the metal plate to the source pad and the lead portion with the other solders. The lead frame is formed of a copper alloy, and thus has its softening temperature higher than the temperature of the solder reflow process. The metal plate is formed of oxygen-free copper, and has its softening temperature lower than the temperature of the solder reflow process, whereby the metal plate is softened in the solder reflow process. Thereafter, a gate pad electrode of the semiconductor chip is coupled to a lead portion via the wire, a sealing resin portion is formed, and then the lead frame is cut.
摘要翻译： 半导体器件具有改进的可靠性。 通过焊料将半导体芯片安装在引线框架的芯片安装部分上。 金属板通过焊料布置在半导体芯片的源极焊盘和引线框架的引线部分的上方。 进行焊料回流工艺，从而通过焊料将半导体芯片连接在芯片安装部分上，并将金属板与其它焊料接合到源极焊盘和引线部分。 引线框架由铜合金形成，因此其软化温度高于焊料回流工艺的温度。 金属板由无氧铜形成，其软化温度低于焊锡回流工序的温度，由此金属板在回流焊工艺中软化。 此后，半导体芯片的栅极焊盘电极通过导线连接到引线部分，形成密封树脂部分，然后引线框架被切割。
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公开(公告)号：US20130001792A1
公开(公告)日：2013-01-03
申请号：US13531567
申请日：2012-06-24
申请人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
发明人： Tomoaki UNO , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
IPC分类号： H01L23/48
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/4824 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/73 , H01L2224/05554 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H02M3/1588 , H02M2001/0009 , Y02B70/1466 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.
摘要翻译： 用于开关的功率MOSFET和具有小于功率MOSFET的面积并且被配置为检测流过功率MOSFET的电流的感测MOSFET形成在一个半导体芯片CPH内，并且半导体芯片CPH安装在芯片安装部分 通过导电接合材料并用树脂密封。 在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。 此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。
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公开(公告)号：US08633550B2
公开(公告)日：2014-01-21
申请号：US13531567
申请日：2012-06-24
申请人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
发明人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
IPC分类号： H01L27/088
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/4824 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/73 , H01L2224/05554 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H02M3/1588 , H02M2001/0009 , Y02B70/1466 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： To improve reliability of a semiconductor deviceA power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.
摘要翻译： 提高半导体器件的可靠性在一个半导体芯片CPH和半导体芯片CPH内形成用于开关的功率MOSFET和具有小于功率MOSFET的功率MOSFET并且被配置为检测流过功率MOSFET的电流的感测MOSFET 通过导电接合材料安装在芯片安装部分上并用树脂密封。 在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。 此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。
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