公开(公告)号：US08450218B2

公开(公告)日：2013-05-28

申请号：US13338484

申请日：2011-12-28

申请人： Yunjun Ho ,  Brent Gilgen

发明人： Yunjun Ho ,  Brent Gilgen

IPC分类号： H01L21/31

CPC分类号： H01L21/02164 ,  H01L21/02222 ,  H01L21/02307 ,  H01L21/02326 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76897

摘要： A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the H2O-treated silicon nitride-comprising surface. The polysilazane-comprising spin-on dielectric material is oxidized to form silicon oxide. Other implementations are contemplated.

摘要翻译： 形成氧化硅的方法包括在衬底上沉积含氮化硅的材料。 包含氮化硅的材料具有最高的最外面的含氮化硅的表面。 这种表面用体积至少为99.5％H 2 O的流体处理。 包含聚硅氮烷的旋涂电介质材料形成在经H2O处理的含氮化硅的表面上。 包含聚硅氮烷的旋涂电介质材料被氧化形成氧化硅。 考虑其他实现。

公开(公告)号：US20120100726A1

公开(公告)日：2012-04-26

申请号：US13338484

申请日：2011-12-28

申请人： Yunjun Ho ,  Brent Gilgen

发明人： Yunjun Ho ,  Brent Gilgen

IPC分类号： H01L21/316 ,  H01L21/3105

CPC分类号： H01L21/02164 ,  H01L21/02222 ,  H01L21/02307 ,  H01L21/02326 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76897

摘要： A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the H2O-treated silicon nitride-comprising surface. The polysilazane-comprising spin-on dielectric material is oxidized to form silicon oxide. Other implementations are contemplated.

摘要翻译： 形成氧化硅的方法包括在衬底上沉积含氮化硅的材料。 包含氮化硅的材料具有最高的最外面的含氮化硅的表面。 用体积为至少99.5％H 2 O的流体处理该表面。 包含聚硅氮烷的旋涂电介质材料形成在经H2O处理的含氮化硅的表面上。 包含聚硅氮烷的旋涂电介质材料被氧化形成氧化硅。 考虑其他实现。

公开(公告)号：US08105956B2

公开(公告)日：2012-01-31

申请号：US12582181

申请日：2009-10-20

申请人： Yunjun Ho ,  Brent Gilgen

发明人： Yunjun Ho ,  Brent Gilgen

IPC分类号： H01L21/31

CPC分类号： H01L21/02164 ,  H01L21/02222 ,  H01L21/02307 ,  H01L21/02326 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76897

摘要： A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the H2O-treated silicon nitride-comprising surface. The polysilazane-comprising spin-on dielectric material is oxidized to form silicon oxide. Other implementations are contemplated.

摘要翻译： 形成氧化硅的方法包括在衬底上沉积含氮化硅的材料。 包含氮化硅的材料具有最高的最外面的含氮化硅的表面。 这种表面用体积至少为99.5％H 2 O的流体处理。 包含聚硅氮烷的旋涂电介质材料形成在经H2O处理的含氮化硅的表面上。 包含聚硅氮烷的旋涂电介质材料被氧化形成氧化硅。 考虑其他实现。

公开(公告)号：US20110092061A1

公开(公告)日：2011-04-21

申请号：US12582181

申请日：2009-10-20

申请人： Yunjun Ho ,  Brent Gilgen

发明人： Yunjun Ho ,  Brent Gilgen

IPC分类号： H01L21/3105 ,  H01L21/312 ,  H01L21/8234

CPC分类号： H01L21/02164 ,  H01L21/02222 ,  H01L21/02307 ,  H01L21/02326 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76897

摘要： A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at least 99.5% H2O by volume. A polysilazane-comprising spin-on dielectric material is formed onto the H2O-treated silicon nitride-comprising surface. The polysilazane-comprising spin-on dielectric material is oxidized to form silicon oxide. Other implementations are contemplated.

摘要翻译： 形成氧化硅的方法包括在衬底上沉积含氮化硅的材料。 包含氮化硅的材料具有最高的最外面的含氮化硅的表面。 这种表面用体积至少为99.5％H 2 O的流体处理。 包含聚硅氮烷的旋涂电介质材料形成在经H2O处理的含氮化硅的表面上。 包含聚硅氮烷的旋涂电介质材料被氧化形成氧化硅。 考虑其他实现。

公开(公告)号：US06888217B2

公开(公告)日：2005-05-03

申请号：US09945555

申请日：2001-08-30

申请人： Brent Gilgen ,  Belford T. Coursey

发明人： Brent Gilgen ,  Belford T. Coursey

IPC分类号： H01L21/02 ,  H01L29/00 ,  H01L21/00

CPC分类号： H01L28/84 ,  H01L28/91

摘要： A capacitor including a first plate of conductive material that is formed in a predetermined shape. A layer of dielectric material is formed on at least a portion of the first plate and substantially conforms to the predetermined shape of the first plate. A second plate of conductive material is formed over the layer of dielectric material.

摘要翻译： 一种电容器，包括形成为预定形状的导电材料的第一板。 介电材料层形成在第一板的至少一部分上并基本上符合第一板的预定形状。 在介电材料层上形成第二导电材料板。

公开(公告)号：US06688584B2

公开(公告)日：2004-02-10

申请号：US09858617

申请日：2001-05-16

申请人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

发明人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

IPC分类号： H01L2940

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

公开(公告)号：US06462353B1

公开(公告)日：2002-10-08

申请号：US09703806

申请日：2000-11-02

申请人： Brent Gilgen

发明人： Brent Gilgen

IPC分类号： H01L4700

CPC分类号： H01L45/06 ,  G11C2213/52 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1675 ,  H01L45/1683

摘要： An electrode structure for use in a chalcogenide memory is disclosed. The electrode has a substantially frusto-conical shape, and is preferably formed by undercut etching a polysilicon layer beneath an oxide pattern. With this structure, improved current densities through the chalcogenide material can be achieved.

摘要翻译： 公开了一种用于硫族化物记忆体的电极结构。 电极具有基本截头圆锥形状，并且优选地通过在氧化物图案下方蚀刻蚀刻多晶硅层来形成。 通过这种结构，可以实现通过硫族化物材料的改善的电流密度。

公开(公告)号：US07545009B2

公开(公告)日：2009-06-09

申请号：US11072159

申请日：2005-03-04

申请人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

发明人： Ravi Iyer ,  Yongjun Jeff Hu ,  Luan Tran ,  Brent Gilgen

IPC分类号： H01L29/78

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

摘要翻译： 使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。 每种难熔金属材料是含有难熔金属和杂质的导电材料。 第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。 与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。 因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。 这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

公开(公告)号：US20050161721A1

公开(公告)日：2005-07-28

申请号：US11072159

申请日：2005-03-04

申请人： Ravi Iyer ,  Yongjun Hu ,  Luan Tran ,  Brent Gilgen

发明人： Ravi Iyer ,  Yongjun Hu ,  Luan Tran ,  Brent Gilgen

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L29/45 ,  H01L27/108

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/7687 ,  H01L21/76889 ,  H01L23/485 ,  H01L27/10855 ,  H01L28/84 ,  H01L28/90 ,  H01L29/456 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Various embodiments of the invention described herein reduce contact resistance to a silicon-containing material using a first refractory metal material overlying the silicon-containing material and a second refractory metal material overlying the first refractory metal material. Each refractory metal material is a conductive material containing a refractory metal and an impurity. The first refractory metal material is a metal-rich material, containing a level of its impurity at less than a stoichiometric level. The second refractory metal material has a lower affinity for the impurities than does the first refractory metal material. The second refractory metal material can thus serve as an impurity donor during an anneal or other exposure to heat. This net migration of the impurities to the first refractory metal material limits growth of a metal silicide interface between the first refractory metal material and the underlying silicon-containing material, thereby providing ohmic contact with attendant thermal tolerance.

摘要翻译： 使用覆盖含硅材料的第一耐火金属材料和覆盖第一难熔金属材料的第二难熔金属材料来降低与含硅材料的接触电阻。 每种难熔金属材料是含有难熔金属和杂质的导电材料。 第一难熔金属材料是富含金属的材料，其含量低于化学计量水平的杂质。 与第一难熔金属材料相比，第二难熔金属材料对杂质的亲和力较低。 因此，第二难熔金属材料可以在退火或其它暴露于热的过程中用作杂质供体。 这种杂质向第一难熔金属材料的净迁移限制了第一难熔金属材料和下面的含硅材料之间的金属硅化物界面的生长，从而提供与耐热性的欧姆接触。

公开(公告)号：US20050090070A1

公开(公告)日：2005-04-28

申请号：US10931718

申请日：2004-09-01

申请人： Brent Gilgen ,  Belford Coursey

发明人： Brent Gilgen ,  Belford Coursey

IPC分类号： H01L21/02 ,  H01L21/20 ,  B41N1/00 ,  B41N3/00

CPC分类号： H01L28/84 ,  H01L28/91

摘要： A capacitor including a first plate of conductive material that is formed in a predetermined shape. A layer of dielectric material is formed on at least a portion of the first plate and substantially conforms to the predetermined shape of the first plate. A second plate of conductive material is formed over the layer of dielectric material.