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    Collector for bipolar lithium ion secondary batteries
    5.
    发明授权
    Collector for bipolar lithium ion secondary batteries 有权
    双极型锂离子二次电池收集器

    公开(公告)号：US09537152B2

    公开(公告)日：2017-01-03

    申请号：US14233980

    申请日：2012-07-18

    申请人： Yasuyuki Tanaka ,  Masami Yanagida ,  Kohei Ogawa ,  Satoshi Oku ,  Masahiro Kojima ,  Takashi Kikuchi ,  Takashi Ito

    发明人： Yasuyuki Tanaka ,  Masami Yanagida ,  Kohei Ogawa ,  Satoshi Oku ,  Masahiro Kojima ,  Takashi Kikuchi ,  Takashi Ito

    IPC分类号： H01M4/66 ,  H01M10/0525

    CPC分类号： H01M4/667 ,  H01M4/666 ,  H01M4/668 ,  H01M10/0525 ,  Y02E60/122 ,  Y02T10/7011

    摘要： A collector for bipolar lithium ion secondary batteries comprises a first conductive layer that is obtained by adding a conductive filler to a base that contains an imide group-containing resin, and a second conductive layer that has a function of blocking lithium ions. The second conductive layer comprises a blocking resin layer that is obtained by adding a conductive filler to a base that contains a resin which contains no imide group, and a metal layer. This collector for bipolar lithium ion secondary batteries is used in such a manner that the first conductive layer is on the positive electrode active material layer side with respect to the second conductive layer.

    摘要翻译： 双极性锂离子二次电池的集电体包括通过在含有含酰亚胺基的树脂的基体中添加导电性填料而获得的第一导电层和具有阻断锂离子功能的第二导电层。 第二导电层包括通过将导电填料添加到含有不含酰亚胺基的树脂的基体和金属层而获得的阻挡树脂层。 双极性锂离子二次电池用集电体的使用方式是使第一导电层相对于第二导电层位于正极活性物质层一侧。

    PROCESS FOR PRODUCTION OF ELECTRICALLY CONDUCTIVE POLYIMIDE FILM
    6.
    发明申请
    PROCESS FOR PRODUCTION OF ELECTRICALLY CONDUCTIVE POLYIMIDE FILM 审中-公开
    生产电导电聚酰亚胺薄膜的方法

    公开(公告)号：US20130270487A1

    公开(公告)日：2013-10-17

    申请号：US13881972

    申请日：2011-10-28

    申请人： Satoshi Oku ,  Masami Yanagida ,  Yusuke Kato ,  Masahiro Kojima ,  Takashi Ito

    发明人： Satoshi Oku ,  Masami Yanagida ,  Yusuke Kato ,  Masahiro Kojima ,  Takashi Ito

    IPC分类号： H01B1/24

    CPC分类号： H01B1/24 ,  C08G73/1021 ,  C08G73/1042 ,  C08G73/105 ,  C08G73/1067 ,  C08G73/1071 ,  C08J5/18 ,  C08J2379/08 ,  C09D179/08 ,  C08K3/04

    摘要： A polyamic acid that includes a polyamic acid (A) obtained by reacting a tetracarboxylic anhydride containing 3,3′,4,4′-biphenyltetracarboxylic dianhydride with a diamine compound containing 4,4′-oxydianiline, a conductivity-imparting agent (B), and an imidization accelerator (C) and in which the conductivity-imparting agent is dispersed is used as a coating liquid; the coating liquid is applied onto a support; the obtained coating film is dried and imidized; and an electrically conductive polyimide film having a desired electric resistivity and good mechanical properties is consequently produced with good productivity.

    摘要翻译： 一种聚酰胺酸，其包含通过使含有3,3'，4,4'-联苯四羧酸二酐的四羧酸酐与含有4,4'-氧二苯胺的二胺化合物，导电性赋予剂（B）， 和分散有导电性赋予剂的酰亚胺化促进剂（C）用作涂布液; 将涂布液施加到支撑体上; 将所得涂膜干燥并酰亚胺化; 因此以良好的生产率生产具有所需电阻率和良好机械性能的导电聚酰亚胺膜。

    Semiconductor optical device and the fabrication method
    8.
    发明授权
    Semiconductor optical device and the fabrication method 有权
    半导体光学器件及其制造方法

    公开(公告)号：US06717187B2

    公开(公告)日：2004-04-06

    申请号：US10124835

    申请日：2002-04-18

    申请人： Susumu Kondo ,  Matsuyuki Ogasawara ,  Ryuzo Iga ,  Yasuhiro Kondo ,  Yoshio Noguchi ,  Masahiro Yuda ,  Ken Tsuzuki ,  Satoshi Oku

    发明人： Susumu Kondo ,  Matsuyuki Ogasawara ,  Ryuzo Iga ,  Yasuhiro Kondo ,  Yoshio Noguchi ,  Masahiro Yuda ,  Ken Tsuzuki ,  Satoshi Oku

    IPC分类号： H01L3172

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  H01S5/0265 ,  H01S5/2226 ,  H01S5/227 ,  H01S5/3072

    摘要： A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.

    摘要翻译： 半导体光学器件包括半导体衬底和由至少第一覆层，有源区和第二覆层形成的层叠体; 其中层叠体的两侧被由半绝缘半导体晶体形成的掩埋层埋设; 掩埋层包括邻近堆叠体的两侧放置的第一层和与第一层相邻放置的第二层; 第一层包括Ru作为掺杂剂; 第二层的组成不同于第一层的组成，或者第二层的掺杂剂不同于第一层的掺杂剂。 该器件也可以被构造成使得有源区的宽度小于层叠体的包覆层的宽度; 并且在有源区的两侧的掩埋层与有源区之间的空间中设置Ru掺杂半绝缘层。