摘要:
A conductive film includes a layer 1 formed by a conductive material 1 that includes a polymer material 1 containing any of (1) an amine and an epoxy resin (where the epoxy resin and the amine are mixed in a ratio of 1.0 or more in terms of the ratio of the number of active hydrogen atoms in the amine with respect to the number of functional groups in the epoxy resin), (2) a phenoxy resin and an epoxy resin, (3) a saturated hydrocarbon polymer having a hydroxyl group, and (4) a curable resin and an elastomer and conductive particles 1. The conductive film has excellent stability in an equilibrium potential environment in a negative electrode and low electric resistance per unit area in the thickness direction. A multilayer conductive film including the conductive film achieves excellent interlayer adhesion, and using them as a current collector enables the production of a battery satisfying both weight reduction and durability.
摘要:
A conductive film includes a layer 1 formed by a conductive material 1 that includes a polymer material 1 containing any of (1) an amine and an epoxy resin (where the epoxy resin and the amine are mixed in a ratio of 1.0 or more in terms of the ratio of the number of active hydrogen atoms in the amine with respect to the number of functional groups in the epoxy resin), (2) a phenoxy resin and an epoxy resin, (3) a saturated hydrocarbon polymer having a hydroxyl group, and (4) a curable resin and an elastomer and conductive particles 1. The conductive film has excellent stability in an equilibrium potential environment in a negative electrode and low electric resistance per unit area in the thickness direction. A multilayer conductive film including the conductive film achieves excellent interlayer adhesion, and using them as a current collector enables the production of a battery satisfying both weight reduction and durability.
摘要:
A multilayer conductive film includes a layer 1 including a conductive material containing a polymer material 1 having an alicyclic structure and conductive particles 1 and a layer 2 including a material having durability against positive electrode potential. The multilayer conductive film has stability in an equilibrium potential environment in a negative electrode and stability in an equilibrium potential environment in a positive electrode, has low electric resistance per unit area in the thickness direction, and has excellent barrier properties for a solvent of an electrolytic solution. A battery including a current collector employing the multilayer conductive film can achieve both weight reduction and durability.
摘要:
A multilayer conductive film includes a layer 1 including a conductive material containing a polymer material 1 having an alicyclic structure and conductive particles 1 and a layer 2 including a material having durability against positive electrode potential. The multilayer conductive film has stability in an equilibrium potential environment in a negative electrode and stability in an equilibrium potential environment in a positive electrode, has low electric resistance per unit area in the thickness direction, and has excellent barrier properties for a solvent of an electrolytic solution. A battery including a current collector employing the multilayer conductive film can achieve both weight reduction and durability.
摘要:
A collector for bipolar lithium ion secondary batteries comprises a first conductive layer that is obtained by adding a conductive filler to a base that contains an imide group-containing resin, and a second conductive layer that has a function of blocking lithium ions. The second conductive layer comprises a blocking resin layer that is obtained by adding a conductive filler to a base that contains a resin which contains no imide group, and a metal layer. This collector for bipolar lithium ion secondary batteries is used in such a manner that the first conductive layer is on the positive electrode active material layer side with respect to the second conductive layer.
摘要:
A polyamic acid that includes a polyamic acid (A) obtained by reacting a tetracarboxylic anhydride containing 3,3′,4,4′-biphenyltetracarboxylic dianhydride with a diamine compound containing 4,4′-oxydianiline, a conductivity-imparting agent (B), and an imidization accelerator (C) and in which the conductivity-imparting agent is dispersed is used as a coating liquid; the coating liquid is applied onto a support; the obtained coating film is dried and imidized; and an electrically conductive polyimide film having a desired electric resistivity and good mechanical properties is consequently produced with good productivity.
摘要:
A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.
摘要:
A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.
摘要:
A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.
摘要:
A semiconductor optical device includes a semiconductor substrate and a stacked body formed by at least a first cladding layer, an active region and a second cladding layer; wherein both sides of the stacked body are buried by a burying layer formed by a semi-insulating semiconductor crystal; the burying layer includes a first layer that is placed adjacent to both sides of the stacked body and a second layer that is placed adjacent to the first layer; the first layer includes Ru as a dopant; composition of the second layer is different from the composition of the first layer, or a dopant of the second layer is different from the dopant of the first layer. The device can also be configured such that the width of the active region is smaller than the width of the cladding layers of the stacked body; and a Ru-doped semi-insulating layer is provided in a space between the burying layer and the active region in both sides of the active region.