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168 条记录 (耗时 0.023 秒)

    Mist supplying device for forming thin film
    2.
    发明授权
    Mist supplying device for forming thin film 失效
    用于形成薄膜的雾化供应装置

    公开(公告)号：US4783006A

    公开(公告)日：1988-11-08

    申请号：US068466

    申请日：1987-06-30

    申请人： Yutaka Hayashi ,  Atuo Itoh ,  Hideyo Iida ,  Kikuji Fukai

    发明人： Yutaka Hayashi ,  Atuo Itoh ,  Hideyo Iida ,  Kikuji Fukai

    IPC分类号： B05B17/04 ,  C23C4/12 ,  C23C18/12 ,  B05B1/00 ,  B05B1/34

    CPC分类号： C23C4/12

    摘要： A mist supplying device for supplying a film-forming solution to form a thin film on a substrate includes a nozzle having an elongate outlet port, an atomizer coupled to the nozzle for atomizing the film-forming solution, and a disperser movably disposed in the nozzle between the outlet port and the atomizer and having a plurality of substantially uniformly distributed mist passages for passing the atomized film-forming solution in a first flow passage direction therethrough. An air blower is coupled to the atomizer for delivering the atomized film-forming solution into the nozzle. A driver unit is coupled to the disperser for reciprocally moving the mist passages in a second flow passage direction transverse to the first flow passage direction.

    摘要翻译： 用于供给成膜溶液以在基材上形成薄膜的雾供应装置包括具有细长出口的喷嘴，与喷嘴连接的用于雾化成膜溶液的雾化器和可移动地设置在喷嘴中的分散器 在所述出口和所述雾化器之间具有多个基本上均匀分布的雾通道，用于使所述雾化膜形成溶液沿第一流动通道方向通过。 鼓风机与雾化器连接，用于将雾化的成膜溶液输送到喷嘴中。 驱动器单元联接到分散器，用于在与第一流动通道方向横切的第二流动通道方向上往复移动雾气通道。

    Photoelectric transducer
    3.
    发明授权
    Photoelectric transducer 失效
    光电传感器

    公开(公告)号：US4644091A

    公开(公告)日：1987-02-17

    申请号：US645059

    申请日：1984-08-28

    申请人： Yutaka Hayashi ,  Hideyo Iida ,  Toshio Mishuku

    发明人： Yutaka Hayashi ,  Hideyo Iida ,  Toshio Mishuku

    IPC分类号： H01L31/04 ,  H01L31/0236 ,  H01L31/052 ,  H01L31/06

    CPC分类号： H01L31/0236 ,  H01L31/056 ,  Y02B10/12 ,  Y02B10/14 ,  Y02E10/52

    摘要： A photoelectric transducer comprising at least a light-transmissive substrate having a relatively flat surface provided on its light-receiving side and an uneven surface provided on its opposite side, and a photoelectric transducing layer provided on the uneven surface of the substrate. The photoelectric transducing layer comprises at least a light-transmissive conductive layer, a semiconductor layer, and a back conductive electrode layer. The back conductive electrode layer comprises a second light-transmissive conductive layer and a conductive layer. The uneven surface on the substrate includes numerous projections, each projection having a triangular section and a shape of pyramidal, ridged roof, or conical type. The projections and the second light-transmissive conductive layer of the uneven back conductive electrode layer elongate the optical path of light beams in the photoelectric transducing layer, and prevent the adherence of dust particles and the abrasion of the photoelectric transducing layer.

    摘要翻译： 一种光电变换器，其至少具有设置在其受光侧具有相对平坦的表面的透光性基板和设置在其相对侧上的不平坦表面，以及设置在基板的不平坦表面上的光电转换层。 光电转换层至少包括透光导电层，半导体层和背面导电电极层。 背面导电电极层包括第二透光导电层和导电层。 基板上的不平坦表面包括许多突起，每个突起具有三角形截面和锥形，脊状屋顶或圆锥形的形状。 不平整背面导电电极层的突起和第二透光导电层使光电转换层中的光束的光路伸长，防止灰尘颗粒的附着和光电转换层的磨损。

    Thin-film forming device
    4.
    发明授权
    Thin-film forming device 失效
    薄膜成型装置

    公开(公告)号：US4649857A

    公开(公告)日：1987-03-17

    申请号：US774508

    申请日：1985-09-10

    申请人： Yutaka Hayashi ,  Atsuo Itoh ,  Hideyo Iida

    发明人： Yutaka Hayashi ,  Atsuo Itoh ,  Hideyo Iida

    IPC分类号： H01B5/14 ,  B05B1/14 ,  C03C17/25 ,  C23C18/12 ,  H01B13/00 ,  H01L21/283 ,  H01L21/288 ,  H01L31/042 ,  B05B15/12

    CPC分类号： C03C17/25 ,  C23C18/12 ,  C23C18/1216 ,  C23C18/1291 ,  C03C2217/229 ,  C03C2218/112 ,  Y10S118/07

    摘要： A thin-film forming device has a support frame for supporting a substrate to be coated with a thin film, a reaction chamber having a space surrounded by the substrate supported on the support frame, side walls mounted under both sides of the substrate and a bottom wall mounted under the side walls, an atomizer for delivering an atomized solution of a material to be coated on the surface of the substrate, a heater disposed behind the substrate for heating the substrate to a temperature higher than a reaction temperature of the material, and a nozzle connected to the atomizer and disposed in the reaction chamber in facing relation to the substrate for spraying the atomized solution toward the surface of the substrate, and cooling means for cooling at least an inside portion of the bottom wall in facing relation to the substrate to a temperature below the reaction temperature of the material.

    摘要翻译： 薄膜形成装置具有用于支撑待涂覆薄膜的基板的支撑框架，具有由支撑在支撑框架上的基板包围的空间的反应室，安装在基板两侧的侧壁和底部 墙壁安装在侧壁下方，雾化器用于输送要涂覆的材料的雾化溶液在基板的表面上;设置在基板后面的加热器，用于将基板加热至高于材料的反应温度的温度;以及 喷嘴，其连接到雾化器并且与反应室相对地设置在基板上，用于将雾化溶液喷射到基板的表面;以及冷却装置，用于冷却基板的至少内壁部分 达到低于材料的反应温度的温度。

    Thin-film solar cell
    5.
    发明授权
    Thin-film solar cell 失效
    薄膜太阳能电池

    公开(公告)号：US4694116A

    公开(公告)日：1987-09-15

    申请号：US842210

    申请日：1986-03-21

    申请人： Yutaka Hayashi ,  Toshio Mishuku ,  Mitsuyuki Yamanaka ,  Hideyo Iida

    发明人： Yutaka Hayashi ,  Toshio Mishuku ,  Mitsuyuki Yamanaka ,  Hideyo Iida

    IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/18 ,  H01L31/06

    CPC分类号： H01L31/1884 ,  H01L31/056 ,  Y02E10/52

    摘要： A thin-film solar cell has a two-layered transparent electrode formed on a transparent substrate, a photoelectric conversion section formed on the transparent electrode, and a back electrode formed on the photoelectric conversion section. The first layer of the transparent electrode is formed on the transparent substrate and is constituted of crystal grains having a large average diameter, while the second layer thereof is formed on the first layer and is constituted of crystal grains having a small average grain diameter. The sharp pointed tips of the coarse crystal grains of the first layer are covered by the fine crystal grains of the second layer so that the side of the transparent electrode in contact with the photoelectric conversion section presents a relatively smooth surface with rounded irregularities. Each layer is separately deposited on the respective transparent substrate.

    摘要翻译： 薄膜太阳能电池具有在透明基板上形成的双层透明电极，形成在透明电极上的光电转换部分和形成在光电转换部分上的背面电极。 透明电极的第一层形成在透明基板上，由平均直径大的晶粒构成，第二层形成在第一层上，由平均粒径小的晶粒构成。 第一层的粗晶粒的锐尖尖端被第二层的细晶粒覆盖，使得与光电转换部分接触的透明电极的侧面呈现具有圆形不规则性的相对平滑的表面。 各层分别沉积在相应的透明基板上。

    Field effect transistor formed on an insulating substrate and integrated circuit thereof
    8.
    发明授权
    Field effect transistor formed on an insulating substrate and integrated circuit thereof 有权

    公开(公告)号：US08450799B2

    公开(公告)日：2013-05-28

    申请号：US11975923

    申请日：2007-10-22

    申请人： Yutaka Hayashi ,  Hisashi Hasegawa ,  Hiroaki Takasu ,  Jun Osanai

    发明人： Yutaka Hayashi ,  Hisashi Hasegawa ,  Hiroaki Takasu ,  Jun Osanai

    IPC分类号： H01L29/34

    CPC分类号： H01L29/78615 ,  H01L29/66772

    摘要： A field effect transistor has an insulating substrate, a semiconductor thin film formed on the insulating substrate, and a gate insulating film on the semiconductor thin film. A first gate electrode is formed on the gate insulating film. A first region and a second region having a first conductivity type are formed on or in a surface of the semiconductor film on opposite sides of the first gate electrode in a length direction thereof. A third region having a second conductivity type opposite the first conductivity type is arranged on or in the semiconductor film side by side with the second region in a width direction of the first gate electrode. The third region and the second region are in contact with each other and make a low resistance junction. A second gate electrode is formed on the gate insulating film along the second region. A fourth region having the first conductivity type is formed on or in the semiconductor film on an opposite side of the second region with respect to the second gate electrode. One of the first and the fourth regions is used as an output region according to a circuit operation.

    Memory cell array
    9.
    发明授权
    Memory cell array 有权
    存储单元阵列

    公开(公告)号：US08094484B2

    公开(公告)日：2012-01-10

    申请号：US12644851

    申请日：2009-12-22

    申请人： Tsuyoshi Takahashi ,  Yutaka Hayashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Masatoshi Ono

    发明人： Tsuyoshi Takahashi ,  Yutaka Hayashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Masatoshi Ono

    IPC分类号： G11C11/00

    CPC分类号： H01L27/24 ,  G11C13/00 ,  G11C13/0069 ,  G11C13/02 ,  G11C2013/0071 ,  G11C2013/009 ,  G11C2213/79

    摘要： Disclosed is a memory cell array including word and first bit lines and second bit lines respectively connected to memory cells, wherein each memory cell includes a MOS transistor and switching element having first and second conductive layers and a gap in which a resistance value changes by applying a predetermined voltage, and data is written by specifying the first bit line to connect it to a ground, specifying the word line and supplying a write voltage to the second bit lines, and read by specifying the first bit line to connect it to the sense amplifier, specifying the word line and supplying a read voltage lower than the write voltage to the second bit lines, and the word line is specified when the word line voltage becomes a gate threshold value voltage or more and a sum of a drive voltage and the gate threshold value voltage or less.

    摘要翻译： 公开了一种存储单元阵列，包括分别连接到存储单元的单词和第一位线和第二位线，其中每个存储单元包括MOS晶体管和具有第一和第二导电层的开关元件以及通过施加电阻值而改变电阻值的间隙 通过指定第一位线将其连接到地，写入数据，指定字线并向第二位线提供写入电压，并通过指定第一位线将其连接到感测来读取 放大器，指定字线并将低于写入电压的读取电压提供给第二位线，并且当字线电压变为栅极阈值电压或更高时指定字线，并且驱动电压和 门极阈值电压以下。

    MEMORY DEVICE AND READING METHOD THEREOF
    10.
    发明申请
    MEMORY DEVICE AND READING METHOD THEREOF 有权
    存储器件及其读取方法

    公开(公告)号：US20100208522A1

    公开(公告)日：2010-08-19

    申请号：US12601788

    申请日：2008-05-23

    申请人： Yutaka Hayashi ,  Kazuhika Matsumoto ,  Takafumi Kamimura

    发明人： Yutaka Hayashi ,  Kazuhika Matsumoto ,  Takafumi Kamimura

    IPC分类号： G11C16/02 ,  H01L27/105

    CPC分类号： H01L29/7881 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/28291 ,  H01L29/0657 ,  H01L29/1606 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/6684 ,  H01L29/7781 ,  H01L29/792

    摘要： A memory device (1) includes at least a first semiconductor region (100) having a length, a first surface, and a cross section surrounded by the first surface, a memory means (300) provided on the first surface, and a gate (400) provided on the memory means (300), and an equivalent sectional radius of the cross section of the first semiconductor region (100) is set to be equal to or smaller than an equivalent silicon oxide film thickness of the memory means (300) to realize low program voltage. The equivalent sectional radius r of the cross section is set to be 10 nm or less and the gate length is set to be 20 nm or less so that multi-level interval converted to gate voltage becomes a specific value which can be identified under the room temperature.

    摘要翻译： 存储器件（1）至少包括具有由第一表面包围的长度，第一表面和横截面的第一半导体区域（100），设置在第一表面上的存储器件（300）和栅极 400），并且将第一半导体区域（100）的横截面的等效截面半径设定为等于或小于存储装置（300）的等效氧化硅膜厚度， 实现低编程电压。 横截面的等效截面半径r设定为10nm以下，栅极长度设定为20nm以下，使得转换为栅极电压的多级间隔成为能够在室内识别的特定值 温度。