摘要:
A conductive substrate with a resistance layer comprising a substantially flat high conductivity substrate roughening treated on its surface by a resistance component and provided with a resistance layer by the resistance component so as to enable the interface between the high conductivity substrate and resistance component layer to be substantially flattened, enable acquisition of a thin film resistance layer with a stable resistance after dissolving away the high conductivity substrate, and able to maintain the peel strength with the insulating support, and a resistance board using the same.
摘要:
A conductive base material with resistance layer provided with roughened conductive base material on the surface of which the resistance layer is formed with uniform thickness distribution, and a resistance circuit board material using the same, wherein electrodeposited copper foil having granular crystals is roughening treated on at least one surface to obtain Rz of not more than 2.5 μm and the resistance layer of Ni alloy layer containing at least 8 to 18 wt % of P is formed on the roughening treated side.
摘要:
A plating bath, able to form a resistance layer with a uniform thickness distribution on the roughened surface of a conductive base, including nickel ions and sulfamic acid or its salt as essential components and at least one of phosphoric acid, phosphorous acid, hypophosphorous acid, and salts of the same; a conductive base having a thin resistance layer with a stable resistance, and a resistance circuit board material using the same.
摘要:
An inexpensive conductive base material with a thin film resistance layer having small variation of the sheet resistance value and a conductive base material with a resistance layer enabling production of a printed resistor circuit board by stably leaving behind resistance elements, that is, a conductive base material with a thin film resistance layer comprised of a conductive base material having a resistance layer formed on its surface wherein the resistance layer includes Ni containing P and an amorphous and a crystalloid form are mixed together and a conductive base material with a thin film resistance layer comprised of a conductive base material having a resistance layer formed on its surface wherein the resistance layer is a crystalline thin film resistance layer including Ni containing P.
摘要:
To provide a surface treated electrodeposited copper foil having a smooth M surface with less asperity on the surface instead of an S surface affected by stripes transferred from a surface drum; a surface treatment is performed on the M surface being an opposite surface of a surface which contacted with a drum in an electrodeposited copper foil, wherein Rz is 1.0 μm or smaller and Ra is 0.2 μm or smaller on the M surface, electrodeposited copper plating is performed to produce a copper foil under a condition of using a copper sulfate bath, wherein a copper concentration is 50 to 80 g/l, a sulfuric acid concentration is 30 to 70 g/l, a solution temperature is 35 to 45° C., a chloride concentration is 0.01 to 30 ppm, an adding concentration of a total of an organic sulfur based compound, low molecular weight glue and polymeric polysaccharide is 0.1 to 100 ppm and TOC (total organic carbon) is 400 ppm or smaller, and a current density is 20 to 50 A/dm2, and a surface treatment is performed on an M surface of the copper foil to attain Rz of 1.0 μm or smaller and Ra of 0.2 μm or smaller on the M surface.
摘要:
A surface treated electrodeposited copper foil having a smooth M surface; a surface treatment is performed on the M surface being an opposite surface of a surface which contacted with a drum in an electrodeposited copper foil, wherein Rz is 1.0 μm or smaller and Ra is 0.2 μm or smaller on the M surface, electrodeposited copper plating is performed to produce a copper foil under a condition of using a copper sulfate bath, wherein a copper concentration is 50 to 80 g/l, a sulfuric acid concentration is 30 to 70 g/l, a solution temperature is 35 to 45° C., a chloride concentration is 0.01 to 30 ppm, an adding concentration of a total of an organic sulfur based compound, low molecular weight glue and polymeric polysaccharide is 0.1 to 100 ppm and TOC is 400 ppm or smaller, and a current density is 20 to 50 A/dm2.
摘要:
There is provided an impregnated-type cathode substrate comprising a large particle diameter low porosity region and a small particle diameter high porosity region which is provided in a side of an electron emission surface of the large particle diameter low porosity region and has an average particle diameter smaller than an average particle diameter of the large particle diameter low pore region and a porosity higher than a porosity of the large particle diameter low porosity region, the impregnated-type cathode being impregnated with an electron emission substance.
摘要:
A coin processor is described in which coins deposited in a vending machine classified according to value in coin storage cylinders and wherein a coin recovery system includes a controller for controlling the discharge mechanisms operative with the respective coin storage cylinders to enable, when desired, the recovery of coins from the storage cylinder according to a predetermined sequence by actuation of a prescribed switch or, alternatively, recovery of coins from any particular storage cylinder by actuation of a switch associated therewith. The controller is capable of overriding the sequenced discharge of coins from the respective cylinders upon subsequent actuation of a required switch. The described processor employs a preset counter and a change detection sensor associated with each respective coin storage cylinder for terminating the coin discharge operation from each respective storage cylinder upon the discharge of a predetermined counted number of coins.
摘要:
There is provided an impregnated-type cathode substrate comprising a large particle diameter low porosity region and a small particle diameter high porosity region which is provided in a side of an electron emission surface of the large particle diameter low porosity region and has an average particle diameter smaller than an average particle diameter of the large particle diameter low pore region and a porosity higher than a porosity of the large particle diameter low porosity region, the impregnated-type cathode being impregnated with an electron emission substance.
摘要:
An indirectly heated type cathode assembly comprises a cathode sleeve having a heater within itself and having an emitter-impregnated type cathode disc fitted at one end, a plurality of straps connected at one end to a lower end portion of the cathode sleeve, and a cylinder holder whose upper end is connected to the other end of each strap, the holder being located outside the cathode sleeve such that it is spaced a predetermined distance apart from the cathode sleeve. A heat reflecting cylinder is located between the cathode sleeve and the holder of the indirectly heated type cathode assembly such that it is coaxial with the cathode sleeve and holder. The heat reflecting cylinder is supported by the holder and each strap extends such that it is not in contact with the heat reflecting cylinder. The strap is made of a Ta-W alloy or a Ta-W-Hf alloy. An electron gun structure comprises the indirectly heated type cathode assembly, a first grid placed in front of the indirectly heated type cathode assembly and an insulation support into which the first grid and the holder of the indirectly heated type cathode assembly are embedded partially and directly through a securing piece, respectively. The cathode disc is hidden, by a heat reflecting cylinder, from view at least that portion of the insulating support which is defined between an embedded spot of the first grid and that of the securing piece.