公开(公告)号：US20100040720A1

公开(公告)日：2010-02-18

申请号：US12159031

申请日：2006-12-12

申请人： Yuusuke Nakagawa ,  Toshio Fujino

发明人： Yuusuke Nakagawa ,  Toshio Fujino

IPC分类号： B29C45/56

CPC分类号： B29C45/44 ,  B29C45/0025 ,  B29C45/2602 ,  B29L2031/3044

摘要： Metal mold (1) for production of molded article (20) having an undercut portion (22), comprising first die (2) forming of an outer surface of main body part (21) of the molded article (20) and second die (3) composed of a first slide core (11) forming an outer surface of the undercut portion (22) of the molded article (20), a second slide core (12) forming an end (22a) of the undercut portion (22) and movable die (13) forming an inner surface of the shaped article (20), wherein the first die (2) is configured so as to be openable and closable as to the second die (3), and wherein each of the first slide core (11) and the second slide core (12) independently is movable in a direction different from the opening and closing direction of the first die (2), and wherein the second die (3) is provided with a biasing means (51) biasing the second slide core (12) toward the closing direction of the second slide core (12) and the first slide core (11).

摘要翻译： 用于制造具有底切部分（22）的模制品（20）的金属模具（1），包括形成模制品（20）的主体部分（21）的外表面的第一模具（2）和第二模具 3），其形成形成所述模制品（20）的底切部分（22）的外表面的第一滑动芯（11），形成所述底切部分（22）的端部（22a）的第二滑动芯部（12） 以及形成所述成形制品（20）的内表面的活动模具（13），其中，所述第一模具（2）构造成能够相对于所述第二模具（3）开启和关闭，并且其中，所述第一滑块 所述第二模芯（11）和所述第二滑动芯部（12）独立地在与所述第一模具（2）的开闭方向不同的方向上移动，并且其中所述第二模具（3）设置有偏置装置（51） 使第二滑动芯（12）向第二滑动芯（12）和第一滑动芯（11）的关闭方向偏压。

公开(公告)号：US09259870B2

公开(公告)日：2016-02-16

申请号：US12159031

申请日：2006-12-12

申请人： Yuusuke Nakagawa ,  Toshio Fujino

发明人： Yuusuke Nakagawa ,  Toshio Fujino

IPC分类号： B29C45/26 ,  B29C45/44 ,  B29C45/00 ,  B29L31/30

CPC分类号： B29C45/44 ,  B29C45/0025 ,  B29C45/2602 ,  B29L2031/3044

摘要： Metal mold (1) for production of molded article (20) having an undercut portion (22), comprising first die (2) forming of an outer surface of main body part (21) of the molded article (20) and second die (3) composed of a first slide core (11) forming an outer surface of the undercut portion (22) of the molded article (20), a second slide core (12) forming an end (22a) of the undercut portion (22) and movable die (13) forming an inner surface of the shaped article (20), wherein the first die (2) is configured so as to be openable and closable as to the second die (3), and wherein each of the first slide core (11) and the second slide core (12) independently is movable in a direction different from the opening and closing direction of the first die (2), and wherein the second die (3) is provided with a biasing means (51) biasing the second slide core (12) toward the closing direction of the second slide core (12) and the first slide core (11).

摘要翻译： 用于制造具有底切部分（22）的模制品（20）的金属模具（1），包括形成模制品（20）的主体部分（21）的外表面的第一模具（2）和第二模具 3），其形成形成所述模制品（20）的底切部分（22）的外表面的第一滑动芯（11），形成所述底切部分（22）的端部（22a）的第二滑动芯部（12） 以及形成所述成形制品（20）的内表面的活动模具（13），其中，所述第一模具（2）构造成能够相对于所述第二模具（3）开启和关闭，并且其中，所述第一滑块 所述第二模芯（11）和所述第二滑动芯部（12）独立地在与所述第一模具（2）的开闭方向不同的方向上移动，并且其中所述第二模具（3）设置有偏置装置（51） 使第二滑动芯（12）向第二滑动芯（12）和第一滑动芯（11）的关闭方向偏压。

公开(公告)号：US20080241981A1

公开(公告)日：2008-10-02

申请号：US12134698

申请日：2008-06-06

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L21/00

CPC分类号： H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

摘要翻译： 提供一种薄膜半导体器件，其包括半导体薄膜和栅电极。 半导体薄膜通过能量束的照射使有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。

公开(公告)号：US20070212860A1

公开(公告)日：2007-09-13

申请号：US11684908

申请日：2007-03-12

申请人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

发明人： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed, wherein the semiconductor thin film is completely melted and the irradiation conditions of the energy beam are so set that the semiconductor thin film at a central position of the energy beam is finally crystallized in association with the scanning with the energy beam.

摘要翻译： 提供了一种使半导体薄膜结晶的方法。 该方法包括在以给定速度扫描的同时在半导体薄膜上连续照射能量束，其中半导体薄膜完全熔化，能量束的照射条件如此设定，使得半导体薄膜位于 能量束最终与能量束的扫描相结合。

公开(公告)号：US08278163B2

公开(公告)日：2012-10-02

申请号：US12507985

申请日：2009-07-23

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Katsuji Takagi ,  Shinsuke Haga

IPC分类号： H01L21/268 ,  G21K5/10

CPC分类号： H01L21/02691 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0676 ,  H01L21/02678 ,  H01L21/268

摘要： A semiconductor processing apparatus includes: a stage on which a substrate having a semiconductor film to be processed is to be mounted; a supply section that supplies a plurality of energy beams onto the semiconductor film mounted on the stage in such a way that irradiation points of the energy beams are aligned at given intervals; and a control section that moves the plurality of energy beams and the substrate relative to each other in a direction not in parallel to alignment of the irradiation points of the plurality of energy beams supplied by the supply section, and scans the semiconductor film with the irradiation points of the plurality of energy beams in parallel to thereby control a heat treatment on the semiconductor film.

摘要翻译： 一种半导体处理装置，包括：要安装具有要加工的半导体膜的衬底的阶段; 供给部，其以使得能量束的照射点以给定间隔对准的方式将多个能量束提供到安装在台上的半导体膜上; 以及控制部，其使所述多个能量束和所述基板相对于与所述供给部供给的所述多个能量束的照射点的排列不平行的方向移动，并且利用所述照射来扫描所述半导体膜 多个能量束的点平行，从而控制半导体膜上的热处理。

公开(公告)号：US20110033999A1

公开(公告)日：2011-02-10

申请号：US12847200

申请日：2010-07-30

申请人： Tadahiro Kono ,  Akio Machida ,  Toshio Fujino

发明人： Tadahiro Kono ,  Akio Machida ,  Toshio Fujino

IPC分类号： H01L21/336 ,  H01L21/22

CPC分类号： H01L29/78621 ,  H01L21/2225 ,  H01L21/2254 ,  H01L21/2255 ,  H01L29/66757

摘要： A doping method includes: a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting essentially of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a substrate; a second step of drying the material solution to form an antimony compound layer on the substrate; and a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the substrate.

摘要翻译： 掺杂方法包括：将含有选自基本上由氢，氮，氧和碳组成的组的锑化合物的锑化合物与锑一起沉积到基材表面的第一步骤; 干燥材料溶液以在基材上形成锑化合物层的第二步骤; 以及进行热处理以使锑化合物层中的锑扩散到基板中的第三步骤。

公开(公告)号：US07598160B2

公开(公告)日：2009-10-06

申请号：US12134698

申请日：2008-06-06

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L21/36

CPC分类号： H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A method for manufacturing thin film semiconductor device is provided. The semiconductor thin film includes a semiconductor thin film and a gate electrode and has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

摘要翻译： 提供一种制造薄膜半导体器件的方法。 半导体薄膜包括半导体薄膜和栅电极，并且通过照射能量束而将有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。

公开(公告)号：US07169690B2

公开(公告)日：2007-01-30

申请号：US11098846

申请日：2005-04-05

申请人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

摘要翻译： 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US20050006646A1

公开(公告)日：2005-01-13

申请号：US10856138

申请日：2004-05-28

申请人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

发明人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

IPC分类号： C30B13/00 ,  C30B29/06 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01S3/00

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/78675

摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.

摘要翻译： 提供了包括多个半导体晶粒的结晶半导体材料的制造方法。 该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有基本上垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层的厚度的约1/4的范围内的高度，以及横向 尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于 对预测。 因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

公开(公告)号：US20100093112A1

公开(公告)日：2010-04-15

申请号：US12574024

申请日：2009-10-06

申请人： Katsuji Takagi ,  Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Norio Fukasawa ,  Shinsuke Haga

发明人： Katsuji Takagi ,  Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Norio Fukasawa ,  Shinsuke Haga

IPC分类号： H01L21/66 ,  B23K26/00

CPC分类号： B23K26/03 ,  H01L22/26

摘要： An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.

摘要翻译： 本发明的一个实施例提供了一种激光退火方法，包括以下步骤：扫描激光束为非晶膜时，在基板上的非晶膜上照射激光，使非晶膜结晶，检测从 基板和激光束的扫描速度，同时对非晶膜进行激光束的辐射和扫描，并且基于光量的比较结果控制激光束的辐射水平和扫描速度 从基板反射的激光束和激光束的扫描速度具有各自的预设参考。