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    Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer
    1.
    发明授权
    Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer 有权
    修复硅衬底中的深层地下缺陷的方法，其包括从牺牲氧化物层将带负电荷的离子扩散到衬底中

    公开(公告)号：US07851339B2

    公开(公告)日：2010-12-14

    申请号：US12128996

    申请日：2008-05-29

    申请人： Zhong Dong ,  Ching-Hwa Chen

    发明人： Zhong Dong ,  Ching-Hwa Chen

    IPC分类号： H01L21/225

    CPC分类号： H01L21/324 ,  H01L21/28167 ,  H01L21/28238 ,  H01L29/78

    摘要： Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.

    摘要翻译： 通过在氮气释放气氛中进行高温退火，同时通过包含容易扩散的原子的牺牲氧化物涂层涂覆基底，从而改善在单晶衬底上形成的场效应晶体管和其它通道相关器件的性能，所述牺牲氧化物涂层可形成带负电荷的离子， 可以深层扩散到底物中。 在一个实施方案中，容易扩散的原子在牺牲氧化物涂层中包含至少5％的原子浓度的氯原子，并且氮气释放气氛包括NO。 高温退火在低于1100℃的温度下进行少于10小时。

    Fabrication of integrated circuits with isolation trenches
    3.
    发明授权
    Fabrication of integrated circuits with isolation trenches 有权
    具有隔离沟槽的集成电路制造

    公开(公告)号：US07807577B2

    公开(公告)日：2010-10-05

    申请号：US12196067

    申请日：2008-08-21

    申请人： Zhong Dong ,  Ching-Hwa Chen

    发明人： Zhong Dong ,  Ching-Hwa Chen

    IPC分类号： H01L21/311

    CPC分类号： H01L21/76224 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

    摘要： After forming a stack of layers (130, 140, 310) for a transistor or a charge-trapping memory over an active area (110), and before etching isolation trenches (160) in the semiconductor substrate (120) with the stack as a mask, spacers (610) are formed on the stack's sidewalls. The trench etch may include a lateral component, so the top edges of the trenches may be laterally recessed to a position under the spacers or the stack. After the etch, the spacers are removed to facilitate filling the trenches with the dielectric (to eliminate voids at the recessed top edges of the trenches). Other embodiments are also provided.

    摘要翻译： 在有源区（110）上形成用于晶体管或电荷俘获存储器的层叠层（130,140,​​310）之后，以及在将堆叠中的隔离沟槽（160）刻蚀为半导体衬底 掩模，间隔物（610）形成在堆叠的侧壁上。 沟槽蚀刻可以包括侧向部件，因此沟槽的顶部边缘可以横向凹入到间隔件或堆叠下的位置。 在蚀刻之后，去除间隔物以便于用电介质填充沟槽（以消除沟槽的凹陷顶部边缘处的空隙）。 还提供了其他实施例。

    Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSG
    4.
    发明申请
    Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSG 有权
    用于同时制造ONO型存储单元的方法以及用于低压逻辑晶体管的相关高电压写入晶体管和栅极电介质的栅极电介质通过使用ISSG

    公开(公告)号：US20060017092A1

    公开(公告)日：2006-01-26

    申请号：US10898273

    申请日：2004-07-23

    申请人： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chia-Shun Hsiao

    发明人： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chia-Shun Hsiao

    IPC分类号： H01L21/8242 ,  H01L21/336

    CPC分类号： H01L27/11526 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/11546 ,  H01L29/42324

    摘要： Conventional fabrication of top oxide in an ONO-type memory cell stack usually produces Bird's Beak. Certain materials in the stack such as silicon nitrides are relatively difficult to oxidize. As a result oxidation does not proceed uniformly along the multi-layered height of the ONO-type stack. The present disclosure shows how radical-based fabrication of top-oxide of an ONO stack (i.e. by ISSG method) can help to reduce formation of Bird's Beak. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse deeply through already oxidized layers of the ONO stack such as the lower silicon oxide layer. As a result, a more uniform top oxide dielectric can be fabricated with more uniform breakdown voltages along its height. Additionally, adjacent low and high voltage transistors may benefit from simultaneous formation of their gate dielectrics with use of the radical-based oxidizing method.

    摘要翻译： ONO型记忆体堆叠中的顶层氧化物的常规制造通常产生Bird's Beak。 叠层中的某些材料如氮化硅相对难以氧化。 因此，氧化不会沿着ONO型堆叠的多层高度均匀地进行。 本公开显示了如何基于根基的ONO堆叠的顶部氧化物的制造（即通过ISSG方法）可以帮助减少Bird's Beak的形成。 更具体地，表明短寿命氧化剂（例如原子氧）能够更好地氧化难以氧化的材料，例如氮化硅，并且表明短寿命氧化剂交替地或另外不会扩散深 通过已经氧化的ONO堆叠层，例如较低的氧化硅层。 结果，可以制造更均匀的顶部氧化物电介质，沿其高度具有更均匀的击穿电压。 此外，相邻的低压和高压晶体管可以受益于使用基于自由基的氧化方法同时形成其栅极电介质。

    Method of forming ONO-type sidewall with reduced bird's beak
    5.
    发明申请
    Method of forming ONO-type sidewall with reduced bird's beak 有权
    用鸟喙形成ONO型侧壁的方法

    公开(公告)号：US20050227437A1

    公开(公告)日：2005-10-13

    申请号：US10821100

    申请日：2004-04-07

    申请人： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chunchieh Huang ,  Jin-Ho Kim ,  Vei-Han Chan ,  Chung Leung ,  Chia-Shun Hsiao ,  George Kovall ,  Steven Yang

    发明人： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chunchieh Huang ,  Jin-Ho Kim ,  Vei-Han Chan ,  Chung Leung ,  Chia-Shun Hsiao ,  George Kovall ,  Steven Yang

    IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788

    CPC分类号： H01L21/28273 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/7881

    摘要： Conventional fabrication of sidewall oxide around an ONO-type memory cell stack usually produces Bird's Beak because prior to the fabrication, there is an exposed sidewall of the ONO-type memory cell stack that exposes side parts of a plurality of material layers respectively composed of different materials. Certain materials in the stack such as silicon nitrides are more difficult to oxidize than other materials in the stack such polysilicon. As a result oxidation does not proceed uniformly along the multi-layered height of the sidewall. The present disclosure shows how radical-based fabrication of sidewall dielectric can help to reduce the Bird's Beak formation. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse as deeply through already oxidized layers of the sidewall such as silicon oxide layers. As a result, a more uniform sidewall dielectric can be fabricated with more uniform breakdown voltages along it height.

    摘要翻译： 通常在ONO型存储单元堆叠周围制造侧壁氧化物通常产生鸟喙，因为在制造之前，存在ONO型存储单元堆叠的暴露的侧壁，其暴露分别由不同的多个材料层组成的多个材料层的侧面部分 材料 堆叠中的某些材料如氮化硅比堆叠中的其它材料更难以氧化，这样的多晶硅。 结果，氧化不沿着侧壁的多层高度均匀地进行。 本公开显示了基于侧壁电介质的基于基础的制造有助于减少鸟喙形成。 更具体地，表明短寿命氧化剂（例如原子氧）能够更好地氧化难以氧化的材料如氮化硅，并且表明短寿命氧化剂交替地或另外不扩散为 深深地通过侧壁的已氧化层，例如氧化硅层。 结果，可以制造更均匀的侧壁电介质，沿其高度具有更均匀的击穿电压。

    FABRICATION OF INTEGRATED CIRCUITS WITH ISOLATION TRENCHES
    6.
    发明申请
    FABRICATION OF INTEGRATED CIRCUITS WITH ISOLATION TRENCHES 有权
    集成电路的制造与隔离条

    公开(公告)号：US20100047994A1

    公开(公告)日：2010-02-25

    申请号：US12196067

    申请日：2008-08-21

    申请人： Zhong Dong ,  Ching-Hwa Chen

    发明人： Zhong Dong ,  Ching-Hwa Chen

    IPC分类号： H01L21/764

    CPC分类号： H01L21/76224 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

    摘要： After forming a stack of layers (130, 140, 310) for a transistor or a charge-trapping memory over an active area (110), and before etching isolation trenches (160) in the semiconductor substrate (120) with the stack as a mask, spacers (610) are formed on the stack's sidewalls. The trench etch may include a lateral component, so the top edges of the trenches may be laterally recessed to a position under the spacers or the stack. After the etch, the spacers are removed to facilitate filling the trenches with the dielectric (to eliminate voids at the recessed top edges of the trenches). Other embodiments are also provided.

    摘要翻译： 在有源区（110）上形成用于晶体管或电荷俘获存储器的层叠层（130,140,​​310）之后，以及在将堆叠中的隔离沟槽（160）刻蚀为半导体衬底 掩模，间隔物（610）形成在堆叠的侧壁上。 沟槽蚀刻可以包括侧向部件，因此沟槽的顶部边缘可以横向凹入到间隔件或堆叠下的位置。 在蚀刻之后，去除间隔物以便于用电介质填充沟槽（以消除沟槽凹陷的顶部边缘处的空隙）。 还提供了其他实施例。

    Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSG
    10.
    发明授权
    Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSG 有权
    用于同时制造ONO型存储单元的方法以及用于低压逻辑晶体管的相关高电压写入晶体管和栅极电介质的栅极电介质通过使用ISSG

    公开(公告)号：US07297597B2

    公开(公告)日：2007-11-20

    申请号：US10898273

    申请日：2004-07-23

    申请人： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chia-Shun Hsiao

    发明人： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chia-Shun Hsiao

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11526 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/11546 ,  H01L29/42324

    摘要： Conventional fabrication of top oxide in an ONO-type memory cell stack usually produces Bird's Beak. Certain materials in the stack such as silicon nitrides are relatively difficult to oxidize. As a result oxidation does not proceed uniformly along the multi-layered height of the ONO-type stack. The present disclosure shows how radical-based fabrication of top-oxide of an ONO stack (i.e. by ISSG method) can help to reduce formation of Bird's Beak. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse deeply through already oxidized layers of the ONO stack such as the lower silicon oxide layer. As a result, a more uniform top oxide dielectric can be fabricated with more uniform breakdown voltages along its height. Additionally, adjacent low and high voltage transistors may benefit from simultaneous formation of their gate dielectrics with use of the radical-based oxidizing method.

    摘要翻译： ONO型记忆体堆叠中的顶层氧化物的常规制造通常产生Bird's Beak。 叠层中的某些材料如氮化硅相对难以氧化。 因此，氧化不会沿着ONO型堆叠的多层高度均匀地进行。 本公开显示了如何基于根基的ONO堆叠的顶部氧化物的制造（即通过ISSG方法）可以帮助减少Bird's Beak的形成。 更具体地，表明短寿命氧化剂（例如原子氧）能够更好地氧化难以氧化的材料，例如氮化硅，并且表明短寿命氧化剂交替地或另外不会扩散深 通过已经氧化的ONO堆叠层，例如较低的氧化硅层。 结果，可以制造更均匀的顶部氧化物电介质，沿其高度具有更均匀的击穿电压。 此外，相邻的低压和高压晶体管可以受益于使用基于自由基的氧化方法同时形成其栅极电介质。