摘要:
An integrated circuit die having at least two bond pads, a redistribution layer, the redistribution layer including at least one solder pad including comprising two portions arranged to enable an electrical connection between each other by a same solder ball placed on the solder pad, but electrically isolated of each other in the absence of a solder ball on the solder pad at least two redistribution wires, each one connecting one of the two portions to one of the two bond pads, a first bond pad connected via a first redistribution wire to a first portion of the solder pad being dedicated to digital ground and a second bond pad connected via a second redistribution wire to a second portion of the solder pad being dedicated to analog ground.
摘要:
A semiconductor device manufacturing method includes a wafer stack manufacturing process and a dicing process. The wafer stack manufacturing process includes: a first wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature higher than a glass transition point of the resin film, manufacturing first holes extending from a surface of the resin film to wirings of the circuits, and providing electrodes electrically connected to the wirings in the first holes to form a first wafer; a second wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature lower than a glass transition point of the resin film, manufacturing second holes extending from a surface of the resin film to wirings of the circuits, and providing the electrodes electrically connected to the wirings in the second holes to form a second wafer; and a wafer bonding process.
摘要:
A method of connecting a semiconductor package to a board includes providing a board having a plurality of contact regions, providing a semiconductor package having a plurality of contact areas, selecting a specific contact area out of the plurality of contact areas, applying solder balls to the contact areas and therein applying two or more specific solder balls to the specific contact area, and connecting the semiconductor package to the board in such a way that the two or more specific solder balls are connected with each other and with a contact region of the plurality of contact regions of the board.
摘要:
A snubber circuit includes: a capacitor including a first terminal and a second terminal, where the first terminal of the capacitor is electrically connected to a first terminal of the snubber circuit; and a Bipolar Junction Transistor (BJT), where one of the emitter and the collector of the BJT is electrically connected to the second terminal of the capacitor, and the other one of the emitter and the collector of the BJT is electrically connected to a second terminal of the snubber circuit. The snubber circuit can be electrically connected in parallel to an active component or a load to protect the circuitry connected to the load, and more particularly to absorb spike or noise generated during high-frequency switching of the active component to recycle energy, in order to achieve the goal of reducing spike voltages and enhancing efficiency.
摘要:
Edge coupling of semiconductor dies. In some embodiments, a semiconductor device may include a first semiconductor die, a second semiconductor die disposed in a face-to-face configuration with respect to the first semiconductor die, and an interposer arranged between the first semiconductor and second semiconductor dies, the interposer having an edge detent configured to allow an electrical coupling between the first and second semiconductor dies. In other embodiments, a method may include coupling a first semiconductor die to a surface of an interposer where an edge of the interposer includes detents and the first semiconductor die includes a first pad aligned with a first detent, coupling a second semiconductor die to an opposite surface of the interposer where the first and second semiconductor dies are in a face-to-face configuration and the second semiconductor die includes a second pad aligned with a second detent, and coupling the first and second pads together.
摘要:
A chip-on-film device including a flexible circuit film having a wire, a passivation layer having a hole, an adhesive layer, a first pad, a second pad, an interconnection, and a bump is provided. A part of the adhesive layer is disposed in the hole. The first pad and the second pad are disposed under the passivation layer.A part of the interconnection is disposed under the passivation layer, and disposed between the first pad and the second pad. The bump is electrically connected to the first pad via the adhesive layer. The bump is welded on the wire. A part of a first part of the bump overlaps the first pad, a second part of the bump extends to an outside of the pad and at least partially overlaps the interconnection, and the third part of the bump overlaps the second pad.
摘要:
A chip-on-film device including a flexible circuit film having a wire, a passivation layer having a hole, an adhesive layer, a pad, an interconnection, and a bump is provided. A part of the adhesive layer is disposed in the hole. The pad is disposed under the passivation layer, and a part of the pad is disposed under the hole. A part of the interconnection is disposed under the passivation layer, and disposed at a side of the pad, wherein the interconnection does not touch the pad. A part of the bump is disposed on the adhesive layer. The bump is electrically connected to the pad via the adhesive layer. The bump is welded on the wire. A part of a first part of the bump overlaps the pad, and a second part of the bump extends to an outside of the pad and at least partially overlaps the interconnection.
摘要:
Even in an electronic device where electrodes are coupled electrically using a solder, sections to which electrodes of an electronic component are coupled are switched by a method other than changing circuits of the electronic component or changing circuits of a wiring substrate.The electronic device includes: a wiring substrate having two or more first electrodes over one surface thereof; and an electronic component having, over one surface thereof, two or more second electrodes arranged corresponding to the two or more first electrodes, respectively. At least one of the first electrodes is a specific electrode divided into two or more divided portions, and the divided portions are coupled to different wirings, respectively. Further, at least one of the divided portions is coupled to a corresponding second electrode through a solder.
摘要:
A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units 10 is formed on an SiC chip 9, and each of the units 10 has an external output electrode 4 independently of each other. Bumps 11 (the diameter is from several tens to several hundreds of μm) are formed only on the external output electrodes 4 of non-defective units among the units 10 formed on the SiC chip 9, meanwhile bumps are not formed on the external output electrodes 4 of defective units in which the withstand voltage is too low, or the leakage current is too much. Because the bumps are not formed on the defective units, Schottky-barrier-side electrodes 3 are connected in parallel to the exterior of the device through the bumps 11, and a wiring layer 13 and an external lead 13a of a wiring substrate 12; thus, only the external output electrodes 4 of the non-defective units 10 are connected in parallel with each other.
摘要:
A bump for a semiconductor package includes: a first bump formed on a semiconductor chip and having at least two land parts and a connection part which connects the land parts and has a line width smaller than the land parts; and a second bump formed on the first bump and projecting on the land parts of the first bump in shapes of a hemisphere.