摘要:
A method of manufacturing a magnetic recording medium includes the steps of forming an intermediate layer that is electrically conductive over a non-magnetic substrate; forming an aluminum-containing layer on the intermediate layer; forming a plurality of micro pits in the aluminum-containing layer; generating an alumina-containing layer by anode oxidation of the aluminum-containing layer and simultaneously forming a plurality of nano holes in the alumina-containing layer originating from the plurality of micro pits respectively to expose the intermediate layer; cleaning and drying the plurality of nano holes using a fluid selected from the group consisting of a sub- and super-critical carbon dioxide fluid; and depositing a magnetic metal selectively through the plurality of nano holes on the intermediate layer to form a plurality of magnetic recording elements that collectively form a magnetic recording layer.
摘要:
A magnetic transfer method includes a conjoined body formation step of stacking a transfer master storing transfer information on a transfer receiving body. Air between contact surfaces of the transfer master and transfer receiving body is pushed out in the direction of a non-pressurized area by pressurizing the stacked transfer master and transfer receiving body, to form the conjoined body. The method further includes a transfer step of, by bringing a magnetic field generating module close to the conjoined body, and applying a magnetic field, carrying out a magnetic transfer of the transfer information from the transfer master to the transfer receiving body. A surface roughness of smooth portions of the transfer master in which no transfer information is formed, and the surface roughness of the transfer receiving body, is 1 nm or less.
摘要:
A method for manufacturing a semiconductor module, includes the steps of preparing a board; mounting a semiconductor device on the second metal foil; placing a resin case onto the board for surrounding a first metal foil, an insulating sheet, the second metal foil, and the semiconductor device; pouring a resin in a paste form into the case to fill a space relative to the first metal foil, insulating sheet, the second metal foil and the semiconductor device; and heat-curing the resin. A bottom end of a peripheral wall of the case is located above a bottom surface of the first metal. The bottom surface of the first metal foil and the resin form a flat bottom surface to contact an external mounting member.
摘要:
A semiconductor device having an IGBT includes: a substrate; a drift layer and a base layer on the substrate; trenches penetrating the base layer to divide the base layer into base parts; an emitter region in one base part; a gate element in the trenches; an emitter electrode; and a collector electrode. The one base part provides a channel layer, and another base part provides a float layer having no emitter region. The gate element includes a gate electrode next to the channel layer and a dummy gate electrode next to the float layer. The float layer includes a first float layer adjacent to the channel layer and a second float layer apart from the channel layer. The dummy gate electrode and the first float layer are coupled with a first float wiring on the base layer. The dummy gate electrode is isolated from the second float layer.
摘要:
A super-junction semiconductor substrate is configured in such a manner that an n-type semiconductor layer of a parallel pn structure is opposed to a boundary region between an active area and a peripheral breakdown-resistant structure area. A high-concentration region is formed at the center between p-type semiconductor layers that are located on both sides of the above n-type semiconductor layer. A region where a source electrode is in contact with a channel layer is formed over the n-type semiconductor layer. A portion where the high-concentration region is in contact with the channel layer functions as a diode. The breakdown voltage of the diode is set lower than that of the device.
摘要:
An integrated control circuit for controlling a switching power supply, a switching power supply incorporating the same, and a method of controlling the switching power supply, where the control IC includes a current comparator that detects current flowing through a switching device, a flip-flop circuit that controls the ON-period of the switching device, an averaging circuit that converts the peak load current value to a time-average, a comparator that detects an overloaded state from the load current, a delay circuit that sets a time from detecting the overcurrent state to stopping the switching operation, a latch circuit that stops the switching operation for a period of time, a first reference voltage supply used in the current comparator, which has a higher voltage value than a second reference voltage supply used in the comparator.
摘要:
A method of drawing a pattern for magnetic transfer on a substrate, including the steps of rotating the substrate and scanning the substrate, by an electron beam, in a circumferential direction thereof, deflecting, using a deflection signal, the electron beam in a radial direction thereof, and switching irradiation of the electron beam on and off, so as to create the pattern of a plurality of dots.
摘要:
A semiconductor device manufacturing method includes the steps of preparing a semiconductor element having a first electrode, a second electrode, and a third electrode facing the first electrode and second electrode, the first electrode and second electrode being electrically separated by an insulating layer; arranging a first conductive bonding material on a first metal foil and placing the semiconductor element on the first conductive bonding material; supporting a sheet-shape second conductive bonding material by the insulating layer; arranging a first post electrode and a second post electrode above the first and second electrodes respectively with the second conductive bonding material intervening therebetween; and forming a first conductive bonding layer for bonding the first electrode and the first post electrode, a second conductive bonding layer for bonding the second electrode and the second post electrode, and a third conductive bonding layer for bonding the third electrode and the first metal foil.
摘要:
Substrates for perpendicular magnetic recording media, and perpendicular magnetic recording media using such substrates, are disclosed. By setting the substrate inclination angle, or a parameter related to substrate shape relating to this angle, within an appropriate range, magnetic recording media can be obtained with excellent read signal quality and signal quality stability, regardless of the final substrate machining method. In a substrate for donut-shape magnetic recording media, comprising a main surface, an inner circumferential surface extending along the inside of the main surface, and an outer circumferential surface extending along the outside of the main surface, when the shape of the main surface is defined by a function Z(x,y) of x-y coordinates, the root mean square inclination angle (θsΔq), defined as the inverse tangent (tan−1 (sΔq)) of the root means square inclination (sΔq) which is the root mean square over the entire main surface of the micro-region surface inclination (Δρ) of the main surface, expressed by the following equation, is 5° or less Equation 1 Δ ρ = [ ( ∂ z ( x , y ) ∂ x ) 2 + ( ∂ z ( x , y ) ∂ y ) 2 ] 1 2 .
摘要:
A method of easily manufacturing a master disk for magnetic transfer is disclosed. The method of the invention facilitates separation of the master disk and a slave disk to be transferred even after conducting a magnetic transfer process after adhering the two disks by pressing or exhaustion for the purpose of enhancing transfer performance. A method of manufacturing a master disk comprises a step of forming recesses by eliminating selected parts of a surface region of soft magnetic layer 20 that is uniformly formed on the surface of substrate 10, to a depth not to cut apart the parts with one another, and a step of transforming recessed parts 20b to a nonmagnetic or low magnetic state. The steps forms a pattern of protrusions 20a and recesses 20b corresponding to information to be magnetically transferred, the protrusions 20a being magnetic and the recesses 20b being nonmagnetic or low magnetic.