摘要:
Provided is a laminating apparatus configured to improve the uniformity of the thickness of a laminate to be obtained to improve the yield of a product, such as a laminate. The laminating apparatus includes a pressing device including a first press block that is advanceable and retreatable, a second press block arranged to face the first press block, a first pressing rubber mounted inside the first press block, and a second pressing rubber mounted inside the second press block, the first pressing rubber and the second pressing rubber facing each other, the first pressing rubber having formed on a surface thereof facing the second pressing rubber a convex frame configured to surround a peripheral edge portion thereof.
摘要:
A laminating apparatus for improving the uniformity of the thickness of a resulting laminate to improve the yield of products such as laminates is provided. A pressing device includes: a first press block movable back and forth; a second press block disposed in opposed relation to the first press block; a first pressing plate mounted to the inside of the first press block; and a second pressing plate mounted to the inside of the second press block. The first pressing plate and the second pressing plate are opposed to each other. A surface of the first pressing plate which is opposed to the second pressing plate has a peripheral portion formed into a tapered surface in such a manner that the distance from the second pressing plate increases in an outward direction.
摘要:
A laminating apparatus for a provisionally laminated body is provided and is configured to form an end laminated body including one of a first resin film and a second resin film conforming to protruding and recessed portions of a substrate. The laminating apparatus may include first and second laminating mechanisms. The first laminating mechanism may include a first enclosed space forming receiver, a depressurizer, a heater, and a first pressure laminator to form an intermediate laminated body from the provisionally laminated body. The second laminating mechanism may include a second enclosed space forming receiver, and a second pressure laminator to form the end laminated body from the intermediate laminated body.
摘要:
A laminating apparatus includes workpiece transport units, a vacuum laminating device and a flat press device. The flat press device includes a ball screw having a screw shaft and supporting a first one of a pair of pressing elements, a servomotor connected to the screw shaft of the ball screw, a gap measuring device (linear scale) for measuring a distance between the first pressing element and the second pressing element, and a pressing gap control system for moving the first pressing element to a position in which a predetermined gap is defined between the first pressing element and the second pressing element to stop the first pressing element at that position. The pressing gap control system changes the RPM of the servomotor, based on information on the distance between the first and second pressing elements which is provided from the gap measuring device.
摘要:
A surface treated copper foil with improved adhesion to the insulating resin of a copper-clad laminate for higher frequency applications contains a copper foil provided with a heat-resistant layer and an olefin-based silane coupling agent layer sequentially on at least one side thereof. An anticorrosive treatment may be performed after the heat resistance treatment. The copper foil is preferably an electrolytic copper foil, and these layers can be provided on the S side and/or the M side thereof. The copper foil has an adequate adhesive strength, even without the roughening treatment that has been performed in the past. A film of zinc, zinc-tin, zinc-nickel, zinc-cobalt, copper-zinc, copper-nickel-cobalt, or nickel-cobalt can be used favorably as the heat-resistant layer, and a film that has undergone a zinc-chromate or a chromate treatment can be used favorably as the anticorrosive layer.
摘要:
A lithium-containing complex oxide exhibits a high performance as a cathode active material of a lithium secondary cell or the like and having a high tap density. A granular lithium-containing complex oxide, such as lithium manganese complex oxide, is made up of “complex oxide grains produced by integrating lithium-rich material grains abnormally grown during a firing reaction with the surfaces of the base grains by sintering.” The number of complex oxide grains is not more than 50 per gram of the complex grains. A metal oxide such as manganese oxide and lithium carbonate not more than 5 μm in average grain size are mixed by means of a mixer which grinds and mixes particles by using a shearing force and heated and fired at a warming rate of not more than 50° C./h., thus producing the lithium-containing complex oxide.
摘要:
Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1
摘要翻译:本发明提供一种具有80%以上的相对密度的溅射靶,其含有主要成分为氧化锌的化合物,所述氧化锌满足A u> B u> Y + KbY)/ 2(ZnO)m 1,m,X,m,0
摘要:
Provided is high purity nickel or nickel alloy target for Magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.
摘要:
High purity copper sulfate having a purity of 99.99% or higher and in which the content of transition metals such as Fe, Cr, Ni is 3 wtppm or less; and a method for producing such high purity copper sulfate which includes the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, and subjecting this to filtration to obtain high purity copper sulfate. This manufacturing method of high purity copper sulfate allows the efficient removal of impurities from commercially available copper sulfate crystals at a low cost through dissolution with purified water and thermal concentration.
摘要:
In a method for growing a GaN based compound semiconductor on a front surface of a substrate to obtain the GaN based compound semiconductor crystal in one body, because the gas for reducing and decomposing the substrate is supplied to the rear surface of the substrate and a heat treatment is carried out in a gas atmosphere in which the nitrogen partial pressure is not less than a predetermined value, in order to remove the substrate, it can be prevented that cracks are caused in the crystal, or fracture or warp is caused by causing strain of the GaN based compound semiconductor crystal in a cooling step.