公开(公告)号：US07553683B2

公开(公告)日：2009-06-30

申请号：US10863980

申请日：2004-06-09

申请人： Paul S. Martin ,  Gerd O. Mueller ,  Regina B. Mueller-Mach ,  Helena Ticha ,  Ladislav Tichy

发明人： Paul S. Martin ,  Gerd O. Mueller ,  Regina B. Mueller-Mach ,  Helena Ticha ,  Ladislav Tichy

IPC分类号： H01L21/00

CPC分类号： H01L33/501 ,  C03C3/12 ,  C03C8/10 ,  C03C14/004 ,  C03C2214/04 ,  C03C2214/16 ,  C09K11/02 ,  C09K11/7774 ,  H01L2933/0041

摘要： A semiconductor light emitting device is provided with a separately fabricated wavelength converting element. The wavelength converting element, of e.g., phosphor and glass, is produced in a sheet that is separated into individual wavelength converting elements, which are bonded to light emitting devices. The wavelength converting elements may be grouped and stored according to their wavelength converting properties. The wavelength converting elements may be selectively matched with a semiconductor light emitting device, to produce a desired mixture of primary and secondary light.

摘要翻译： 半导体发光器件设置有单独制造的波长转换元件。 例如磷光体和玻璃的波长转换元件在分离成各个波长转换元件的片材中产生，其结合到发光器件。 波长转换元件可以根据其波长转换特性进行分组和存储。 波长转换元件可以选择性地与半导体发光器件匹配，以产生所需的初级和次级光的混合。

公开(公告)号：US07534638B2

公开(公告)日：2009-05-19

申请号：US11615826

申请日：2006-12-22

申请人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

发明人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

IPC分类号： H01L21/205

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32

摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

公开(公告)号：US07550755B2

公开(公告)日：2009-06-23

申请号：US11577808

申请日：2005-10-20

申请人： Abraham Rudolf Balkenende ,  Erik Petrus Antonius Maria Bakkers ,  Louis Felix Feiner

发明人： Abraham Rudolf Balkenende ,  Erik Petrus Antonius Maria Bakkers ,  Louis Felix Feiner

IPC分类号： H01L29/00 ,  H01L29/02 ,  H01L29/06

CPC分类号： H01L29/12 ,  B82Y10/00 ,  H01L27/15 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676

摘要： The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

摘要翻译： 本发明涉及可以可逆地改变能带隙的半导体器件。 本发明的想法是提供一种器件，其基于半导体材料（306），该材料与正确地被寻址时呈现可逆体积变化的材料机械接触。 相变材料（307）。 该设备例如可以在应用中的发光，开关和存储器中实现。 半导体材料可以通过对相变材料施加局部体积膨胀而可逆地应变。 所得到的半导体材料的带隙变化可用于调节从例如发射的光发射的光的颜色。 LED或激光。 在其他应用领域中，可以控制半导体结中的接触电阻，并且该特征在存储器和开关中是非常有利的。

公开(公告)号：US07535031B2

公开(公告)日：2009-05-19

申请号：US11226184

申请日：2005-09-13

申请人： James C. Kim ,  Stephen A. Stockman

发明人： James C. Kim ,  Stephen A. Stockman

IPC分类号： H01L27/15

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/24 ,  H01S5/0424

摘要： A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extension penetrates at least one of the quantum well layers. The extensions of the p-type region into the active region may provide uniform filling of carriers in the individual quantum wells of the active region by providing direct current paths into individual quantum wells. Such uniform filling may improve the operating efficiency at high current density by reducing the carrier density in the quantum wells closest to the bulk p-type region, thereby reducing the number of carriers lost to nonradiative recombination.

摘要翻译： 半导体发光器件包括有源区，n型区和包括延伸到有源区的部分的p型区。 有源区可以包括由势垒层分隔开的多个量子阱，并且p型延伸部穿透至少一个量子阱层。 通过向各个量子阱提供直流电流路径，p型区域延伸到有源区域中的扩展可以提供对有源区域的各个量子阱中的载流子的均匀填充。 这种均匀填充可以通过降低最接近体p型区域的量子阱中的载流子密度来提高高电流密度下的操作效率，从而减少对非辐射复合物损失的载流子数量。