公开(公告)号：US11894287B2

公开(公告)日：2024-02-06

申请号：US18181552

申请日：2023-03-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hao Chen ,  Chin-Fu Kao ,  Li-Hui Cheng ,  Szu-Wei Lu ,  Chih-Chien Pan

IPC: H01L23/42 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065 ,  H01L23/00 ,  H01L27/06 ,  H01L23/538

CPC classification number: H01L23/42 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/5386 ,  H01L24/14 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L25/0655 ,  H01L27/0688 ,  H01L2224/2958

Abstract: Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

公开(公告)号：US20230230898A1

公开(公告)日：2023-07-20

申请号：US18181552

申请日：2023-03-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hao Chen ,  Chin-Fu Kao ,  Li-Hui Cheng ,  Szu-Wei Lu ,  Chih-Chien Pan

IPC: H01L23/42 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L27/06 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L23/42 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/3185 ,  H01L23/5386 ,  H01L23/49816 ,  H01L24/14 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L25/0655 ,  H01L27/0688 ,  H01L2224/2958

Abstract: Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

公开(公告)号：US20130113106A1

公开(公告)日：2013-05-09

申请号：US13288645

申请日：2011-11-03

Applicant: Son V. Nguyen

Inventor： Son V. Nguyen

IPC: H01L23/488 ,  H01L21/50

CPC classification number: H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

Abstract: At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

公开(公告)号：US20240234244A1

公开(公告)日：2024-07-11

申请号：US18432061

申请日：2024-02-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hao Chen ,  Chin-Fu Kao ,  Li-Hui Cheng ,  Szu-Wei Lu ,  Chih-Chien Pan

IPC: H01L23/42 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L27/06

CPC classification number: H01L23/42 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/5386 ,  H01L24/14 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L25/0655 ,  H01L27/0688 ,  H01L2224/2958

Abstract: Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

公开(公告)号：US08546956B2

公开(公告)日：2013-10-01

申请号：US13826830

申请日：2013-03-14

Applicant: International Business Machines Corporation

Inventor： Son V. Nguyen

IPC: H01L23/488

CPC classification number: H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

Abstract: At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

公开(公告)号：US20130200520A1

公开(公告)日：2013-08-08

申请号：US13826830

申请日：2013-03-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Son V. Nguyen

IPC: H01L23/488

CPC classification number: H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

Abstract: At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

Abstract translation: 在第一器件晶片的至少Cu表面上形成至少一个金属粘附层。 具有另一Cu表面的第二器件晶片被定位在第一器件晶片的Cu表面的顶部和至少一个金属粘附层上。 然后将第一和第二器件晶片结合在一起。 接合包括将器件晶片加热到低于400℃的温度，有或没有施加外部施加的压力。 在加热期间，两个Cu表面结合在一起，并且至少一个金属粘附层从两个Cu表面获得氧原子，并在Cu表面之间形成至少一个金属氧化物结合层。

公开(公告)号：US08431436B1

公开(公告)日：2013-04-30

申请号：US13288645

申请日：2011-11-03

Applicant: Son V. Nguyen

Inventor： Son V. Nguyen

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L23/488 ,  H01L23/481 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13649 ,  H01L2224/13655 ,  H01L2224/13657 ,  H01L2224/13666 ,  H01L2224/13676 ,  H01L2224/13681 ,  H01L2224/13684 ,  H01L2224/16145 ,  H01L2224/16501 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/2958 ,  H01L2224/29649 ,  H01L2224/29655 ,  H01L2224/29657 ,  H01L2224/29666 ,  H01L2224/29676 ,  H01L2224/29681 ,  H01L2224/29684 ,  H01L2224/32501 ,  H01L2224/80075 ,  H01L2224/80097 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81005 ,  H01L2224/81193 ,  H01L2224/8183 ,  H01L2224/81895 ,  H01L2224/83005 ,  H01L2224/83193 ,  H01L2224/8383 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/00

Abstract: At least one metal adhesion layer is formed on at least a Cu surface of a first device wafer. A second device wafer having another Cu surface is positioned atop the Cu surface of the first device wafer and on the at least one metal adhesion layer. The first and second device wafers are then bonded together. The bonding includes heating the devices wafers to a temperature of less than 400° C., with or without, application of an external applied pressure. During the heating, the two Cu surfaces are bonded together and the at least one metal adhesion layer gets oxygen atoms from the two Cu surfaces and forms at least one metal oxide bonding layer between the Cu surfaces.

Abstract translation: 在第一器件晶片的至少Cu表面上形成至少一个金属粘附层。 具有另一Cu表面的第二器件晶片被定位在第一器件晶片的Cu表面的顶部和至少一个金属粘附层上。 然后将第一和第二器件晶片结合在一起。 接合包括将器件晶片加热到低于400℃的温度，有或没有施加外部施加的压力。 在加热期间，两个Cu表面结合在一起，并且至少一个金属粘合层从两个Cu表面获得氧原子，并在Cu表面之间形成至少一个金属氧化物结合层。