Copper electroplating composition for integrated circuit interconnection
    1.
    发明申请
    Copper electroplating composition for integrated circuit interconnection 审中-公开
    铜电镀组合物用于集成电路互连

    公开(公告)号:US20020195351A1

    公开(公告)日:2002-12-26

    申请号:US10121786

    申请日:2002-04-12

    摘要: A copper electroplating composition for integrated circuit interconnection is proposed, including a copper salt, an inorganic acid containing same anion as the copper salt, a suppressing agent and a polishing agent. This electroplating composition helps deposit copper into fine trenches with a high aspect ratio on a substrate, so as to form a surface-flat and void-free plated copper layer over the substrate by electroplating. It can therefore reduce the usage of polishing slurry and polishing time in a subsequent chemical mechanical polishing process, and also improve surface planarity of the copper later after being polished.

    摘要翻译: 提出了一种用于集成电路互连的铜电镀组合物,包括铜盐,含有与铜盐相同的阴离子的无机酸,抑制剂和抛光剂。 该电镀组合物有助于将铜沉积在衬底上具有高纵横比的精细沟槽中,从而通过电镀在衬底上形成表面平坦且无空隙的镀铜层。 因此,可以在随后的化学机械抛光工艺中减少抛光浆料的使用和抛光时间,并且还可以在抛光后改善铜的表面平面度。

    Additives for electroplating solution
    2.
    发明申请
    Additives for electroplating solution 审中-公开
    电镀液添加剂

    公开(公告)号:US20030159941A1

    公开(公告)日:2003-08-28

    申请号:US10074141

    申请日:2002-02-11

    CPC分类号: C25D3/38

    摘要: Embodiments of the invention generally provide a method and plating solution for reducing the degradation of additives in electroplating solutions. The method generally includes adding an anti-oxidant to the electroplating solution in an amount effective to reduce the degradation of additives in the plating solution. The plating solution generally includes copper ions, at least one organic plating additive, and at least one anti-oxidant in an amount sufficient to reduce the degradation of the organic plating additives in the plating solution.

    摘要翻译: 本发明的实施方案通常提供了用于减少电镀溶液中添加剂降解的方法和电镀溶液。 该方法通常包括以有效减少电镀溶液中添加剂降解的量向电镀溶液中加入抗氧化剂。 电镀溶液通常包括铜离子,至少一种有机电镀添加剂和至少一种抗氧化剂,其量足以减少电镀溶液中有机电镀添加剂的降解。

    Brachytherapy device and method of use
    3.
    发明申请
    Brachytherapy device and method of use 审中-公开
    近距离放疗装置及使用方法

    公开(公告)号:US20030092957A1

    公开(公告)日:2003-05-15

    申请号:US10112764

    申请日:2002-04-02

    摘要: The present invention is directed to a brachytherapy device comprising a substrate comprising at least one radioactive coating layer formed thereon. The radioactive coating layer has a total radioactivity that varies in at least one dimension of the device. Methods of making radioactive coatings, such as electrochemical deposition, electroless deposition and sol-gel are also disclosed. Suitable substrates include medical devices, such as catheters, stents, brachytherapy devices and guidewires, or components thereof. The disclosed methods produce medical devices capable of generating asymmetric, or targeted, radiation fields that correspond to the morphology of a tumor. Methods of using these devices to treat cancer of the breast, brain, prostate, uterine, head and neck are also disclosed.

    摘要翻译: 本发明涉及一种近程放射治疗装置,其包括其上形成有至少一个放射性涂层的基底。 放射性涂层具有在装置的至少一个维度上变化的总放射性。 还公开了制备放射性涂层的方法,例如电化学沉积,无电沉积和溶胶 - 凝胶。 合适的基材包括医疗装置,例如导管,支架,近距离放射治疗装置和导线,或其组件。 所公开的方法产生能够产生对应于肿瘤形态的不对称或靶向的辐射场的医疗装置。 还公开了使用这些装置来治疗乳腺,脑,前列腺,子宫,头颈部癌症的方法。

    Copper metal precursor
    5.
    发明申请
    Copper metal precursor 失效
    铜金属前体

    公开(公告)号:US20030203111A1

    公开(公告)日:2003-10-30

    申请号:US10453829

    申请日:2003-06-02

    CPC分类号: H01L21/28556 C23C16/18

    摘要: A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (null-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (null-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.

    摘要翻译: 铜基金属薄膜在基板上进行化学气相沉积的方法包括在化学气相沉积室中加热要沉积铜金属薄膜的基板; 蒸发含有铜金属的前体,其中前体是(α-甲基苯乙烯)Cu(I)(hfac)的化合物,其中hfac是六氟乙酰丙酮化物,和(hfac)Cu(I)L,其中L是烯烃; 将蒸发的前体引入与加热的基底相邻的化学气相沉积室; 并将蒸发的前体冷凝到基底上,从而将铜金属沉积到基底上。 用于铜金属薄膜的化学气相沉积的铜金属前体是(α-甲基苯乙烯)Cu(I)(hfac)的化合物,其中hfac是六氟乙酰丙酮化物,和(hfac)Cu(I)L,其中 L是从由1-戊烯,1-己烯和三甲基乙烯基硅烷组成的烯烃族中获得的烯烃。

    Rutenium film rutenium oxide film, and method for formation thereof
    7.
    发明申请
    Rutenium film rutenium oxide film, and method for formation thereof 有权
    ium膜氧化钌膜及其形成方法

    公开(公告)号:US20030008157A1

    公开(公告)日:2003-01-09

    申请号:US10168104

    申请日:2002-06-17

    CPC分类号: C07F15/0046 Y10T428/31678

    摘要: A composition capable of forming a metal ruthenium film and a ruthenium oxide film by a simple application/baking process, a process for forming a metal ruthenium film and a ruthenium oxide film from the composition, a metal ruthenium film and a ruthenium oxide film formed by the process, and electrodes formed of the films. A solution composition comprising a specific ruthenium complex. The coating film of this solution composition is heated in an atmosphere containing no oxygen or an atmosphere containing oxygen to form a metal ruthenium film or a ruthenium oxide film, respectively, and electrodes formed of the films.

    摘要翻译: 通过简单的涂布/烘烤法,能够形成金属钌膜和氧化钌膜的组合物,从组合物形成金属钌膜和氧化钌膜的方法,金属钌膜和氧化钌膜由 该工艺和由膜形成的电极。 包含特定钌络合物的溶液组合物。 该溶液组合物的涂膜在不含氧气或含氧气氛的气氛中分别加热形成金属钌膜或氧化钌膜,以及由该膜形成的电极。

    Electroless copper plating solution, the electroless copper plating supplementary solution, and the method of manufacturing wiring board
    9.
    发明申请
    Electroless copper plating solution, the electroless copper plating supplementary solution, and the method of manufacturing wiring board 审中-公开
    化学镀铜溶液,化学镀铜补充溶液,以及制造布线板的方法

    公开(公告)号:US20030183120A1

    公开(公告)日:2003-10-02

    申请号:US10078445

    申请日:2002-02-21

    IPC分类号: C23C020/00 G03F007/00

    摘要: An object of the present invention is to provide an elecroless copper plating solution using glyoxylic acid or a salt of glyoxylic acid as the reducing agent in which the amount of Cannizzaro reaction product is small, and the mechanical property of the obtained plated film is excellent, and to provide a supplementary solution for the electroless copper plating solution, a plating method capable of stably forming a plated film using the electroless copper plating solution, and a method of manufacturing a wiring board having an excellent connecting reliability of a through hole. The present invention consist of an electroless copper plating solution including copper ions, a complexing agent of copper ion, a copper ion reducing agent containing glyoxylic acid or a salt of glyoxylic acid, a pH adjusting agent, and succinic acid; a supplementary solution for an electroless copper plating solution including a copper ion reducing agent containing glyoxylic acid or a salt of glyoxylic acid and succinic acid of 10 to 500 ppm; and an electroless copper plating method and a method of manufacturing a wiring board using the electroless copper plating solution and the supplementary solution.

    摘要翻译: 本发明的目的在于提供一种使用乙醛酸或乙醛酸盐作为其中坎尼扎罗反应产物量少的还原剂,并且所得镀膜的机械性能优异的无电镀铜溶液, 并且提供一种用于化学镀铜溶液的补充解决方案,能够使用无电镀铜溶液稳定地形成镀膜的电镀方法,以及具有优异的通孔连接可靠性的布线基板的制造方法。 本发明包括铜离子的无电镀铜溶液,铜离子络合剂,含有乙醛酸的铜离子还原剂或乙醛酸盐,pH调节剂和琥珀酸; 包含含有乙醛酸的铜离子还原剂或乙醛酸和琥珀酸盐的化学镀铜溶液的补充溶液为10〜500ppm; 无电镀铜方法以及使用该化学镀铜溶液和辅助溶液的布线板的制造方法。

    Copper-plating elecrolyte containing polyvinylpyrrolidone and method for forming copper interconnect of semiconductor device using the same
    10.
    发明申请
    Copper-plating elecrolyte containing polyvinylpyrrolidone and method for forming copper interconnect of semiconductor device using the same 有权
    含有电解质电解质的聚乙烯吡咯烷酮和使用其的半导体器件的铜互连形成方法

    公开(公告)号:US20020036144A1

    公开(公告)日:2002-03-28

    申请号:US09899228

    申请日:2001-07-06

    摘要: A copper-plating electrolyte includes an aqueous copper salt solution, a water-soluble null-naphtholethoxylate compound having the formula 1 wherein n is an integer from 10 to 24, one selected from the group consisting of a disulfide having the formula XO3S(CH2)3SS(CH2)3SOX3 and a water-soluble mercaptopropanesulfonic acid or salt thereof having the formula HS(CH2)3SO3X, where X is sodium, potassium, or hydrogen, a water-soluble polyethylene glycol having a molecular weight ranging from about 4,600 to about 10,000, and a water-soluble polyvinylpyrrolidone having a molecular weight ranging from about 10,000 to about 1,300,000.

    摘要翻译: 镀铜电解质包括铜盐水溶液,具有下式的水溶性β-萘基乙氧基化合物,其中n是10-24的整数,一个选自具有式XO 3 S(CH 2)3 SS的二硫化物 (CH 2)3 SOX 3和具有式HS(CH 2)3 SO 3 X的水溶性巯基丙磺酸或其盐,其中X是钠,钾或氢,分子量范围为约4,600至约10,000的水溶性聚乙二醇 ,以及分子量为约10,000至约1,300,000的水溶性聚乙烯吡咯烷酮。