SLURRY ENHANCEMENT FOR POLISHING SYSTEM

    公开(公告)号:US20230021172A1

    公开(公告)日:2023-01-19

    申请号:US17377759

    申请日:2021-07-16

    IPC分类号: B24B53/017 B24B57/02

    摘要: The present disclosure describes a method and an apparatus that can enhance the slurry oxidizability for a chemical mechanical polishing (CMP) process. The method can include securing a substrate onto a carrier of a polishing system. The method can further include dispensing, via a feeder of the polishing system, a first slurry towards a polishing pad of the polishing system. The method can further include forming a second slurry by enhancing an oxidizability of the first slurry, and performing a polishing process, with the second slurry, on the substrate.

    PEDESTAL POLISHING APPARATUS
    2.
    发明申请

    公开(公告)号:US20230016450A1

    公开(公告)日:2023-01-19

    申请号:US17784543

    申请日:2020-12-11

    IPC分类号: B24B53/017 B24B37/34

    摘要: A cleaning apparatus for a vacuum pedestal and method of cleaning a pedestal used in semiconductor device fabrication are described. The apparatus has a baseplate, a collar attached to the baseplate, a cap disposed on the collar, and a shaft that extends from the collar through the cap, collar and baseplate. A manual rotatable handle is attached to a shaft portion that extends from the cap. Motion of the handle in a downward direction is impeded by the cap. A disk is attached to a lower portion of the shaft and is separated from a bottom of the baseplate due to weighted rings, which are attached to the disk and surround the lower portion of the shaft such that a vertical float is present between the shaft and the cap. At least one abrasive pad is attached to the disk to remove build-up on the underlying pedestal surface.

    POLISHING PAD SURFACE COOLING BY COMPRESSED GAS

    公开(公告)号:US20220388117A1

    公开(公告)日:2022-12-08

    申请号:US17337298

    申请日:2021-06-02

    申请人: Revasum, Inc.

    摘要: The present disclosure describes an apparatus for chemical-mechanical polishing of a semiconductor wafer. Some embodiments of the present disclosure include a pad, a slurry introduction mechanism, a wafer carrier (e.g., carrying a wafer being polished by the chemical-mechanical polishing system), a pad conditioner, and a pad cooling mechanism. The pad cooling mechanism of the present disclosure may apply a liquid or gas to the pad (e.g., to an upper surface of the pad) to control the temperature of the pad as the chemical-mechanical polishing process occurs. As a result, the temperature of the pad may be maintained at a safe and operable level for an extended period of time during chemical-mechanical polishing of a wafer.

    METHOD OF DETECTING CHEMICAL MECHANICAL POLISHING CONDITIONING DISK ORIENTATION

    公开(公告)号:US20220388116A1

    公开(公告)日:2022-12-08

    申请号:US17339699

    申请日:2021-06-04

    IPC分类号: B24B53/017 B24B37/005

    摘要: A method and apparatus for determining a polishing pad thickness profile are described herein. A set of displacement sensors, including an arm displacement sensor and one or more conditioning disk displacement sensors are utilized to determine the orientation of a conditioning disk and the thickness of the polishing pad. The displacement sensors are non-contact sensors, such as a laser sensor, a capacitive sensor, or an inductive sensor. Once the thickness profile of the polishing pad is determined, one or more process conditions is altered to improve substrate polishing.

    METHOD FOR CONDITIONING POLISHING PAD

    公开(公告)号:US20220362906A1

    公开(公告)日:2022-11-17

    申请号:US17866538

    申请日:2022-07-17

    摘要: A method includes measuring a first thickness at a first location of the polishing pad and a second thickness at a second location of the polishing pad; obtaining a first reference thickness at the first location of the polishing pad, wherein the first reference thickness is an average thickness of multiple thicknesses at the first location; obtaining a second reference thickness at the second location of the polishing pad, wherein the second reference thickness is an average thickness of multiple thicknesses at the second location; calculating a first thickness difference; calculating a second thickness difference; modifying a conditioning parameter value at the first location of the polishing pad; and sweeping a conditioner across a surface of the polishing pad; and applying a downforce or a sweeping speed to the conditioner that urges the conditioner against the first location of the polishing pad according to the modified conditioning parameter value.

    CHEMICAL MECHANICAL POLISHING CORRECTION TOOL

    公开(公告)号:US20220324081A1

    公开(公告)日:2022-10-13

    申请号:US17634534

    申请日:2020-08-25

    摘要: A chemical mechanical polishing touch-up tool includes a pedestal configured to support a substrate, a plurality of jaws configured to center the substrate on the pedestal, a loading ring to apply pressure to an annular region on a back side of the substrate on the pedestal, a polishing ring to bring a polishing material into contact with an annular region on a front side of the substrate that is aligned with the annular region on the back side of the substrate, and a polishing ring actuator to rotate the polishing ring to cause relative motion between the polishing ring and the substrate.

    Polishing head for face-up type polishing apparatus, polishing apparatus including the polishing head, and polishing method using the polishing apparatus

    公开(公告)号:US11440161B2

    公开(公告)日:2022-09-13

    申请号:US16239302

    申请日:2019-01-03

    申请人: EBARA CORPORATION

    摘要: A polishing liquid is supplied without passing through a rotary joint in a face-up type polishing apparatus. This application discloses a polishing head for the face-up type polishing apparatus used by mounting a polishing pad on a lower surface as one embodiment. The polishing head includes a liquid reservoir portion that receives a liquid and a liquid discharge port that discharges the liquid received by the liquid reservoir portion. The liquid reservoir portion is disposed around a rotation axis of the polishing head. The liquid discharge port is disposed on the lower surface of the polishing head. An annular opening centering on the rotation axis of the polishing head is formed on an upper portion of the polishing head. The liquid reservoir portion is communicated with a space outside the polishing head via the opening.

    Pad conditioner cleaning system
    10.
    发明授权

    公开(公告)号:US11370083B2

    公开(公告)日:2022-06-28

    申请号:US16932628

    申请日:2020-07-17

    IPC分类号: B24B53/017

    摘要: A pad conditioner head cleaning tool has a first clamp configured to removably engage a first portion of a sponge against an outer surface of a disk-shaped pad conditioner head at a first location, a second clamp configured to removable engage a second portion of the sponge against the outer surface of the disk-shaped pad conditioner head at a second location, and an arm coupling the first clamp to the second clamp. The arm is sufficiently flexible to permit the first clamp and the second clamp to be separated to fit around the disk-shaped pad conditioner head and sufficiently tensile to bias the first clamp and the second clamp inwardly to press the sponge against an outer surface of a pad conditioner head.