公开(公告)号：US20240026548A1

公开(公告)日：2024-01-25

申请号：US18349444

申请日：2023-07-10

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

CPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/32135 ,  C09K13/00 ,  H01L21/31122 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US11739428B2

公开(公告)日：2023-08-29

申请号：US17646389

申请日：2021-12-29

申请人： ASM IP HOLDING B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

CPC分类号： C23F4/02 ,  C09K13/00 ,  C09K13/08 ,  C09K13/10 ,  C23F1/12 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/31138

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US11486043B2

公开(公告)日：2022-11-01

申请号：US16526088

申请日：2019-07-30

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihiro Takezawa ,  Shigeru Nakajima ,  Katsushige Harada ,  Yusuke Tachino

IPC分类号： C23F4/02 ,  C23C8/80 ,  C23C8/06

摘要： There is provided a metal contamination prevention method performed by passing a metal chloride gas through a metal component having a surface covered with an inactive film formed of a chromium oxide, the method including: generating a chromium chloride (III) hexahydrate by supplying a hydrochloric acid to the inactive film covering the surface of the metal component and allowing the chromium oxide to react with the hydrochloric acid; removing a chromium from the inactive film by evaporating the chromium chloride (III) hexahydrate; and covering a surface of the inactive film with a compound containing a metal contained in the metal chloride gas.

公开(公告)号：US11230769B2

公开(公告)日：2022-01-25

申请号：US16881718

申请日：2020-05-22

申请人： ASM IP Holding B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20200308710A1

公开(公告)日：2020-10-01

申请号：US16881885

申请日：2020-05-22

申请人： ASM IP Holding B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US10662534B2

公开(公告)日：2020-05-26

申请号：US16390540

申请日：2019-04-22

申请人： ASM IP Holding B.V.

发明人： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC分类号： C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

摘要： Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US10233548B2

公开(公告)日：2019-03-19

申请号：US13808261

申请日：2011-07-05

申请人： Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

发明人： Terutaka Nanri ,  Tsuyoshi Onishi ,  Satoshi Tomimatsu

IPC分类号： C23C14/34 ,  C23F4/02 ,  H01J37/08 ,  G01N23/225 ,  H01J37/244 ,  G01N1/32 ,  H01J37/30 ,  H01J37/305

摘要： Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

公开(公告)号：US09123506B2

公开(公告)日：2015-09-01

申请号：US13914312

申请日：2013-06-10

申请人： FEI Company

发明人： Aiden Martin ,  Milos Toth

IPC分类号： H01J37/305 ,  C23F4/02 ,  H01L21/3065 ,  H01J37/30

CPC分类号： H01J37/3053 ,  C23F4/02 ,  H01J37/3002 ,  H01J2237/0206 ,  H01J2237/2001 ,  H01J2237/24445 ,  H01J2237/2608 ,  H01J2237/31732 ,  H01J2237/31749 ,  H01L21/3065 ,  H01L21/465

摘要： Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

摘要翻译： 光束蚀刻使用保持在接近于前体材料的沸点的温度的工件，但温度足够高以解吸反应副产物。 在一个实施方案中，NF3用作在低于室温的温度下用于电子束诱导的硅蚀刻的前体气体。

公开(公告)号：US20140363978A1

公开(公告)日：2014-12-11

申请号：US13914312

申请日：2013-06-10

申请人： FEI Company

发明人： Aiden Martin ,  Milos Toth

IPC分类号： H01J37/305 ,  C23F4/02 ,  H01L21/3065

CPC分类号： H01J37/3053 ,  C23F4/02 ,  H01J37/3002 ,  H01J2237/0206 ,  H01J2237/2001 ,  H01J2237/24445 ,  H01J2237/2608 ,  H01J2237/31732 ,  H01J2237/31749 ,  H01L21/3065 ,  H01L21/465

摘要： Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.

摘要翻译： 光束蚀刻使用保持在接近于前体材料的沸点的温度的工件，但温度足够高以解吸反应副产物。 在一个实施方案中，NF3用作在低于室温的温度下用于电子束诱导的硅蚀刻的前体气体。

公开(公告)号：US5874011A

公开(公告)日：1999-02-23

申请号：US691147

申请日：1996-08-01

申请人： Daniel Ehrlich

发明人： Daniel Ehrlich

IPC分类号： C23F4/02 ,  H01L21/768 ,  C23F1/00

CPC分类号： C23F4/02 ,  H01L21/76894

摘要： Techniques and apparatus for the laser induced etching of a reactive material, or of a multilayer substrate or wafer comprising layers of materials of different etching characteristics and reactivities, are disclosed. Short wavelength laser radiation and control of the process ambient equalize etch rates of the layers of a multilayer substrate or wafer and allow high-resolution etching. A suppressant gas introduced into a halogen-containing ambient suppresses explosive reactions between the ambient and reactive materials or layers. For less reactive layers or materials, reduced-pressure air is a suitable ambient. The techniques and apparatus disclosed herein are particularly useful in the manufacture of magnetic data transfer heads.

摘要翻译： 公开了用于激光诱导蚀刻反应性材料或包括具有不同蚀刻特性和反应性的材料层的多层衬底或晶片的技术和装置。 短波长激光辐射和过程环境的控制均衡多层衬底或晶片的层的蚀刻速率，并允许高分辨率蚀刻。 引入含卤素环境的抑制气体可以抑制环境和反应性材料或层之间的爆炸反应。 对于较少的反应层或材料，减压空气是合适的环境。 本文公开的技术和装置在磁数据传送头的制造中特别有用。