公开(公告)号：US20230069433A1

公开(公告)日：2023-03-02

申请号：US17861974

申请日：2022-07-11

申请人： Shanghai Huali Integrated Circuit Corporation

发明人： Shumiao Sun ,  Zhigang Yang ,  Qing Zhang

IPC分类号： G01R31/265

摘要： The present application provides a structure and method for online detection of a metal via open circuit, a contact layer is on the substrate, a first metal layer is on the contact layer, a first metal via layer is on the first metal layer, a second metal via layer is on the first metal via layer metal layer, the contact layer comprises a plurality of contacts, the plurality of contacts are connected to the first metal layer, the first metal via layer comprises a plurality of first vias, the plurality of first vias are filled with metal; detecting by means of an E-beam technology. A problem in the process can be found in advance, so as to solve the problem in time and thus stop losses as soon as possible.

公开(公告)号：US20220349934A1

公开(公告)日：2022-11-03

申请号：US17626820

申请日：2021-07-27

申请人： Harbin Institute of Technology

发明人： Xingji Li ,  Jianqun Yang ,  Gang Lv ,  Yadong Wei ,  Xiaodong Xu ,  Tao Ying ,  Xiuhai Cui

IPC分类号： G01R31/265 ,  G01R31/26

摘要： The present invention provides a detection method for sensitive parts of ionization damage in a bipolar transistor, which includes the following steps: selecting an irradiation source, and carrying out irradiation test on the bipolar transistor to be tested; installing the irradiated bipolar transistor on a test bench of a deep level transient spectroscopy system, and setting test parameters; selecting at least two different bias voltages, and testing the bipolar transistor to obtain a deep level transient spectrum; determining whether a defect is an ionization defect according to a peak position of the defect signal in the deep level transient spectrum; determining the defect type as oxidation trapped charges or an interface state according to the level of the defect signal in the deep level transient spectrum; and determining the sensitive area of ionization damage in the bipolar transistor according to the determination result of the defect signal type.

公开(公告)号：US11340293B2

公开(公告)日：2022-05-24

申请号：US17061352

申请日：2020-10-01

申请人： PDF SOLUTIONS, INC.

发明人： Indranil De ,  Marian Mankos ,  Dennis Ciplickas ,  Christopher Hess ,  Jeremy Cheng ,  Balasubramanian Murugan ,  Qi Hu

IPC分类号： G01R31/26 ,  G01R31/306 ,  G01R31/302 ,  G01R31/265

摘要： Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

公开(公告)号：US11340284B2

公开(公告)日：2022-05-24

申请号：US16926757

申请日：2020-07-12

申请人： KLA Corporation

发明人： Kristiaan Van Rossen ,  Christophe Wouters

IPC分类号： G01R1/04 ,  G01R31/265 ,  H01L21/66 ,  H01L21/67

摘要： A first light source is directed at an outer surface of a workpiece in an inspection module. The light from the first light source that is reflected from the outer surface of the workpiece is directed to the camera via a first pathway. The light from the first light source transmitted through the workpiece is directed to the camera via a second pathway. A second light source is directed at the outer surface of the workpiece 180° from that of the first light source. The light from the second light source that is reflected from the outer surface of the workpiece is directed to the camera via the second pathway. The light from the second light source transmitted through the workpiece is directed to the camera via the first pathway.

公开(公告)号：US11328899B2

公开(公告)日：2022-05-10

申请号：US17061401

申请日：2020-10-01

申请人： PDF SOLUTIONS, INC.

发明人： Indranil De ,  Jeremy Cheng ,  Thomas Sokollik ,  Yoram Schwarz ,  Stephen Lam ,  Xumin Shen

IPC分类号： H01J37/30 ,  H01J37/317 ,  G01R31/306 ,  G01R31/265

摘要： Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

公开(公告)号：US11269005B2

公开(公告)日：2022-03-08

申请号：US16626608

申请日：2018-05-17

申请人： Robert Bosch GmbH

发明人： Jan Homoth ,  Jonathan Winkler

IPC分类号： G01R31/28 ,  G01K7/01 ,  G01R31/265

摘要： A device for converting electrical energy, including at least one switching-type semiconductor component, a cooling path for cooling the semiconductor component, and a device for determining a degradation of the cooling path based on a current having a predetermined current intensity that flows through the component. The device provides that the semiconductor component includes an optically active semiconductor material, which generates light having a brightness that is dependent on a temperature of the semiconductor component when the semiconductor component is traversed by current having a predetermined current intensity, and the device for determining the degradation includes a brightness sensor for recording the brightness of the generated light. The device has the advantage that the device for determining the degradation and the component are inherently galvanically isolated, and the degradation can be determined at a high resolution.

公开(公告)号：US11239152B2

公开(公告)日：2022-02-01

申请号：US16559807

申请日：2019-09-04

申请人： International Business Machines Corporation

发明人： Otto Andreas Torreiter ,  Thomas Gentner ,  Martin Eckert

IPC分类号： H01L25/16 ,  H01L23/522 ,  G01Q60/14 ,  G01R31/265 ,  G01R31/28

摘要： The invention relates to an integrated circuit with an active transistor area and a plurality of wiring layers arranged above the active transistor area. At least one optical device is integrated in the active transistor area. The optical device is electrically connected with at least one of the wiring layers. At least one optical tunnel extends from the at least one optical device through the plurality of wiring layers to a surface of an uppermost wiring layer of the plurality of wiring layers facing away from the active transistor area.

公开(公告)号：US20220011363A1

公开(公告)日：2022-01-13

申请号：US17121851

申请日：2020-12-15

申请人： The Government of the United States, as represented by the Secretary of the Army

发明人： Greg Rupper ,  John Suarez ,  Sergey Rudin ,  Meredith Reed ,  Michael Shur

IPC分类号： G01R31/311 ,  G01R31/265 ,  G01R31/3185 ,  G01R31/28

摘要： Various embodiments are described that relate to failure determination for an integrated circuit. An integrated circuit can be tested to determine if the integrated circuit is functioning properly. The integrated circuit can be subjected to a specific radiation such that the integrated circuit produces a response. This response can be compared against an expected response to determine if the response matches the expected response. If the response does not match the expected response, then the integrated circuit fails the test. If the response matches the expected response, then the integrated circuit passes the test.

公开(公告)号：US11187613B2

公开(公告)日：2021-11-30

申请号：US16863303

申请日：2020-04-30

申请人： STMicroelectronics (Crolles 2) SAS

发明人： Philippe Grosse ,  Patrick Le Maitre ,  Jean-Francois Carpentier

IPC分类号： G01M11/02 ,  G02B6/28 ,  G02B6/34 ,  G02B6/12 ,  G02B6/00 ,  G01M11/00 ,  G01R31/265 ,  G01R31/27 ,  G01R31/28 ,  G01R31/303 ,  G01R31/311 ,  G01R31/317 ,  G01R35/00

摘要： An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe circuit and then processed. In one process, test data from the electrical signals is simultaneously generated at each step of a sweep in wavelength of the optical test signal and output in response to a step change. In another process, the electrical signals are sequentially selected and the sweep in wavelength of the optical test signal is performed for each selected electrical signal to generate the test data.

公开(公告)号：US20210325435A1

公开(公告)日：2021-10-21

申请号：US17271042

申请日：2019-06-05

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Yoshitaka IWAKI ,  Yuji NAKAJIMA ,  Toshiki YAMADA

IPC分类号： G01R19/00 ,  G01R31/265 ,  G01R31/311 ,  G01R31/26

摘要： An inspection device includes a reference signal output section, a noise removal section, and an electrical characteristic measurement section. The reference signal output section is connected to an external power supply device in electrical parallel with a semiconductor sample, and outputs a reference signal according to the output of the external power supply device. The noise removal section outputs a noise removal signal obtained by removing a noise component of the output of the external power supply device from the current signal output from the semiconductor sample based on the reference signal. The electrical characteristic measurement section measures the electrical characteristic of the semiconductor sample based on the noise removal signal. The inspection device measures the electrical characteristic of the semiconductor sample to which a voltage is being applied by the external power supply device and which is being irradiated and scanned with light. The inspection device outputs a defective portion of the semiconductor sample based on the electrical characteristic.