MODULAR POWER TRANSISTOR COMPONENT ASSEMBLIES WITH FLIP CHIP INTERCONNECTIONS

    公开(公告)号:US20230420430A1

    公开(公告)日:2023-12-28

    申请号:US17848500

    申请日:2022-06-24

    CPC classification number: H01L25/165 H01L23/055 H01L23/367 H01L23/49822

    Abstract: A transistor device package includes a transistor die comprising a gate terminal, a drain terminal, and a source terminal, and a passive component assembly including the transistor die on a surface thereof and comprising one or more passive electrical components electrically coupled to the gate terminal, the drain terminal, and/or the source terminal. A mold structure may be provided on the one or more passive electrical components. One or more conductive pads may be exposed by the mold structure. A support structure may extend along one or more sides of the transistor die on the surface of the passive component assembly. The support structure may provide a cavity that extends around the transistor die, and/or may be thermally conductive. Related devices and component assemblies are also discussed.

    Functional element housing package, and semiconductor device and LN modulator

    公开(公告)号:US11815749B2

    公开(公告)日:2023-11-14

    申请号:US16087985

    申请日:2017-03-27

    Abstract: A functional element housing package includes a pin terminal disposed in an outer region of a housing for housing a functional element. A wiring substrate is connected with the pin terminal. The wiring substrate includes a through hole for receiving the pin terminal, a first metallic layer disposed around an opening of the through hole on a side of the wiring substrate which side is located close to the housing, a second metallic layer disposed around an opening of the through hole on a side of the wiring substrate which is opposed to the side located close to the housing, the second metallic layer being greater in area than the first metallic layer, a connection wiring line connected to the first metallic layer or the second metallic layer, and a solder which connects the pin terminal to each of the first metallic layer and the second metallic layer.

    Semiconductor package
    8.
    发明授权

    公开(公告)号:US11417631B2

    公开(公告)日:2022-08-16

    申请号:US16522112

    申请日:2019-07-25

    Abstract: A semiconductor package includes: a first semiconductor package including: a first frame having a first through portion, a first semiconductor chip in the first through portion and having a first surface on which a first connection pad is disposed and a second surface on which a second connection pad is disposed, and a through via connected to the second connection pad, a first connection structure on the first surface and including a first redistribution layer, and a backside redistribution layer on the second surface; and a second semiconductor package on the first semiconductor package and including: a second connection structure including a second redistribution layer, a second frame on the second connection structure and having a second through portion, and a second semiconductor chip in a second through portion and having a third surface on which a third connection pad is disposed.

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