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公开(公告)号：US11817524B1
公开(公告)日：2023-11-14
申请号：US17526623
申请日：2021-11-15
发明人： Roger E. Welser , Ashok K. Sood
IPC分类号： H01L31/00 , H01L31/18 , H01L31/0216 , G02B1/115 , H01L31/054 , H01L31/0232 , H01L31/0352 , H01L31/0725 , H01L31/0445 , H01L31/056 , H01L31/0203 , H01L31/0224 , H01L31/0735 , H01L31/048 , H01L31/0304 , H01L31/065
CPC分类号： H01L31/1884 , G02B1/115 , H01L31/0203 , H01L31/0232 , H01L31/02165 , H01L31/02168 , H01L31/022425 , H01L31/022475 , H01L31/035236 , H01L31/035263 , H01L31/048 , H01L31/0445 , H01L31/0481 , H01L31/056 , H01L31/0543 , H01L31/0547 , H01L31/0725 , H01L31/0735 , H01L31/184 , H01L31/186 , H01L31/1844 , H01L31/03046 , H01L31/065 , Y02E10/50 , Y02E10/52 , Y02E10/544
摘要： Refractive optical element designs are provided for high geometric optical efficiency over a wide range of incident angles. To minimize Fresnel reflection losses, the refractive optical element designs employ multiple encapsulant materials, differing in refractive index. Concentrator photovoltaic subassemblies are formed by embedding a high efficiency photovoltaic device within the refractive optical element, along with appropriate electrical contacts and heat sinks. Increased solar electric power output is obtained by employing a single-junction III-V material structure with light-trapping structures.
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公开(公告)号：US11742448B2
公开(公告)日：2023-08-29
申请号：US17586162
申请日：2022-01-27
发明人： John Hart , Daniel Derkacs , Zachary Bittner , Andrew Espenlaub
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/065 , H01L31/18
CPC分类号： H01L31/0725 , H01L31/065 , H01L31/0735 , H01L31/184
摘要： A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; and a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of its emitter layer and base layer.
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公开(公告)号：US11588069B2
公开(公告)日：2023-02-21
申请号：US17466708
申请日：2021-09-03
申请人： First Solar, Inc.
发明人： Kristian William Andreini , Holly Ann Blaydes , Jongwoo Choi , Adam Fraser Halverson , Eugene Thomas Hinners , William Hullinger Huber , Yong Liang , Joseph John Shiang
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0296 , H01L31/065 , H01L31/073
摘要： Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
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公开(公告)号：US20210399159A1
公开(公告)日：2021-12-23
申请号：US17466708
申请日：2021-09-03
申请人： First Solar, Inc.
发明人： Kristian William Andreini , Holly Ann Blaydes , Jongwoo Choi , Adam Fraser Halverson , Eugene Thomas Hinners , William Hullinger Huber , Yong Liang , Joseph John Shiang
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0296 , H01L31/073 , H01L31/065
摘要： Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
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公开(公告)号：US10978604B2
公开(公告)日：2021-04-13
申请号：US15592669
申请日：2017-05-11
IPC分类号： H01L31/065 , H01L31/032 , H01L31/0368 , H01L31/18 , H01L31/0224
摘要： A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.
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公开(公告)号：US20200350459A1
公开(公告)日：2020-11-05
申请号：US16934726
申请日：2020-07-21
申请人： First Solar, Inc.
发明人： Kristian William Andreini , Holly Ann Blaydes , Jongwoo Choi , Adam Fraser Halverson , Eugene Thomas Hinners , William Hullinger Huber , Yong Liang , Joseph John Shiang
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0296 , H01L31/073 , H01L31/065
摘要： Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
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7.发明授权公开(公告)号：US10580922B2
公开(公告)日：2020-03-03
申请号：US14760099
申请日：2014-01-09
IPC分类号： H01L31/065 , H01L31/18 , H01L21/225 , H01L21/324 , H01L31/0352 , H01L31/068
摘要： Method of providing a boron doped region (8, 8a, 8b) in a silicon substrate (1), includes the steps of: (a) depositing a boron doping source (6) over a first surface (2) of the substrate (1); (b) annealing the substrate (1) for diffusing boron from the boron doping source (6) into the first surface (2), thereby yielding a boron doped region; (c) removing the boron doping source (6) from at least part of the first surface (2); (d) depositing undoped silicon oxide (10) over the first surface (2); and (e) annealing the substrate (1) for lowering a peak concentration of boron in the boron doped region (8, 8a) through boron absorption by the undoped silicon oxide. The silicon oxide (10) acts as a boron absorber to obtain the desired concentration of the boron doped region (8).
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公开(公告)号：US10355157B2
公开(公告)日：2019-07-16
申请号：US14531037
申请日：2014-11-03
发明人： Corey E. Lerner
IPC分类号： H01L31/07 , H01L31/065
摘要： A photovoltaic cell incorporating a semiconductor element (10) composed entirely of a single conductivity type. A biasing agent (26) having a work function different from that of the semiconductor element overlies a face of the element and produces a band bending and thus an electric field in a space charge region. Electrodes are in contact with the semiconductor element within the space charge region. Carriers generated by light absorbed in the semiconductor element are accelerated toward the electrodes by the field.
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公开(公告)号：US10319872B2
公开(公告)日：2019-06-11
申请号：US13468292
申请日：2012-05-10
IPC分类号： H01L31/076 , H01L31/077 , C23C16/50 , H01L31/20 , H01L21/02 , C23C16/02 , H01L31/0216 , H01L31/0368 , H01L31/0376 , H01L31/0392 , C23C16/455 , C23C16/515 , H01L31/0224 , H01L31/065 , H01L31/18 , H01L31/056
摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.
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公开(公告)号：US20190097079A1
公开(公告)日：2019-03-28
申请号：US16200423
申请日：2018-11-26
申请人： First Solar, Inc.
发明人： Holly Ann Blaydes , Kristian William Andreini , William Hullinger Huber , Eugene Thomas Hinners , Joseph John Shiang , Yong Liang , Jongwoo Choi , Adam Fraser Halverson
IPC分类号： H01L31/18 , H01L31/073 , H01L31/065 , H01L31/0224 , H01L31/0296
摘要： Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
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