公开(公告)号：WO2004015018A1

公开(公告)日：2004-02-19

申请号：PCT/US2003/019727

申请日：2003-06-19

Applicant: HONEYWELL INTERNATIONAL INC. ,  TOWERY, Daniel ,  FURY, Michael

Inventor： TOWERY, Daniel ,  FURY, Michael

IPC: C09G1/02

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/31058

Abstract: An aqueous metal oxide sol slurry has been developed for removal of low dielectric constant materials. The slurry is formed directly in solution utilizing non-dehydrated chemically active metal oxide sols which are formed in a colloidal suspension or dispersion. The oxide sols have not undergone any subsequent drying and the particles are believed to be substantially spherical in structure, dimensionally stable and do not change shape over time. The sol particles are mechanically soft and heavily hydrated which reduces surface damage even in the case where soft polymer or porous dielectric films are polished. The sol particles are formed of a chemically active metal oxide material, or combinations thereof, or can be coated on chemically inactive oxide material such as silicon dioxide or can be coformed therewith. The oxide sols can include a bi-modal particle distribution. The slurry can be utilized in CMP processes, with or without conditioning.

Abstract translation: 已经开发了用于去除低介电常数材料的金属氧化物溶胶浆料水溶液。 使用以胶体悬浮液或分散体形成的非脱水化学活性金属氧化物溶胶，直接在溶液中形成浆液。 氧化物溶胶没有经历任何随后的干燥，并且所述颗粒被认为在结构上基本上是球形的，尺寸稳定的并且不随时间改变形状。 溶胶颗粒机械柔软并且水分高，即使在软质聚合物或多孔电介质膜被抛光的情况下也能降低表面损伤。 溶胶颗粒由化学活性金属氧化物材料或其组合形成，或者可以涂覆在化学惰性氧化物材料如二氧化硅上，或者可与其共形。 氧化物溶胶可以包括双模态粒子分布。 浆料可用于CMP工艺，有或没有调理。

公开(公告)号：WO02065529A3

公开(公告)日：2002-10-10

申请号：PCT/US0203453

申请日：2002-02-08

Applicant: EKC TECHNOLOGY INC

Inventor： SMALL ROBERT J ,  SHANG XIAOWEI

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/461 ,  H01L21/768

CPC classification number: H01L21/02024 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3212

Abstract: The present invention relates to the use of ozone (O3) as a reagent in chemical mechanical planarization either in aqueous solution or as a gas directly impinging on the surface to be planarized. An aqueous solution containing ozone may optionally contain abrasive particles and/or additional CMP reagents co-dissolved with the ozone including carbonate and bicarbonate anions, and organic acids such as formic, oxalic, acetic and glycol. Abrasives that may be added include alumina, silica, spinel, ceria, and zirconia. Typical concentrations of ozone in aqueous solution are in the range from approximately 1 part-per-million up to saturation. Ammonium salts, particularly ammonium carbonate, facilitate planarization in cooperation with the ozone-containing aqueous solution. Low k dielectric materials, organic as well as inorganic, and difficult to oxidize metals can be planarized with ozone reagents pursuant to the present invention.

Abstract translation: 本发明涉及臭氧（O 3）作为化学机械平面化中的试剂在水溶液中或作为直接撞击在待平面化表面上的气体的用途。 含有臭氧的水溶液可以任选地含有磨粒和/或与臭氧（包括碳酸盐和碳酸氢盐阴离子）以及有机酸（如甲酸，草酸，乙酸和乙二醇）共同溶解的其他CMP试剂。 可添加的磨料包括氧化铝，二氧化硅，尖晶石，二氧化铈和氧化锆。 臭氧在水溶液中的典型浓度范围约为百万分之一至饱和。 铵盐，特别是碳酸铵，有助于与含臭氧的水溶液协同平面化。 低k电介质材料，有机以及无机以及难以氧化的金属可以根据本发明用臭氧试剂平面化。

公开(公告)号：WO2002067314A2

公开(公告)日：2002-08-29

申请号：PCT/IB2002/000210

申请日：2002-01-24

Applicant: MATTSON THERMAL PRODUCTS INC.

Inventor： SHARANGPANI, Rahul ,  TAY, Sing-Pin

IPC: H01L21/3105

CPC classification number: H01L21/02118 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/3127

Abstract: A method for curing low k dielectric materials uses very short, relatively high temperature cycles instead of the conventionally used (lower temperature/longer time) thermal cycles. A substrate, such as a semiconductor wafer, coated with a layer of coating material is heated to an elevated temperature at a heating rate of greater than about 20°C per second. Once the coating material has been converted to a low dielectric constant material with desired properties, the coated substrate is cooled. Alternatively, spike heating raises and promptly lowers the temperature of the coated substrate to effect curing in one or a series of spikes heating steps. The method allows for a thinner refractory barrier metal layer thickness to prevent copper diffusion, and uses shorter curing times resulting in higher throughput.

Abstract translation: 用于固化低k电介质材料的方法使用非常短的相对较高的温度循环而不是常规使用的（较低温度/较长时间）热循环。 将涂覆有涂层材料层的衬底（例如半导体晶片）以大于约20℃/秒的加热速率加热至升高的温度。 一旦涂层材料已经转变为具有所需性能的低介电常数材料，涂覆的基材就被冷却。 或者，尖峰加热升高并迅速降低涂覆基底的温度，以在一个或一系列尖峰加热步骤中进行固化。 该方法允许较薄的难熔阻挡金属层厚度以防止铜扩散，并使用较短的固化时间，从而产生较高的通量。

公开(公告)号：WO00049647A1

公开(公告)日：2000-08-24

申请号：PCT/US2000/003893

申请日：2000-02-16

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/302

CPC classification number: C09G1/02 ,  H01L21/31058 ,  H01L21/3212

Abstract: A method for chemical-mechanical polishing of a low dielectric constant polymeric layer wherein a slurry comprising high purity fine metal oxide particles uniformly dispersed in a stable aqueous medium is used.

Abstract translation: 一种用于低介电常数聚合物层的化学机械抛光的方法，其中使用包含均匀分散在稳定水性介质中的高纯度金属氧化物颗粒的浆料。

公开(公告)号：WO00041230A2

公开(公告)日：2000-07-13

申请号：PCT/US2000/000200

申请日：2000-01-05

IPC: B05D3/06 ,  C08F2/48 ,  C09D183/04 ,  H01L21/3105 ,  H01L21/312

CPC classification number: H01L21/02126 ,  B05D3/068 ,  C09D183/04 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/3122

Abstract: Electron beam cured siloxane dielectric films and a process for their manufacture which are useful in the production of integrated circuits. A siloxane polymer having in one aspect less than 40 Mole percent carbon containing substituents, and in another aspect at least approximately 40 Mole percent carbon containing substituents is cured by a wide beam electron beam exposure.

Abstract translation: 电子束固化的硅氧烷介电膜及其制造方法可用于集成电路的生产。 具有一个方面小于40摩尔％的含碳取代基的硅氧烷聚合物，另一方面，至少约40摩尔％的含碳取代基的硅氧烷聚合物通过宽束电子束曝光固化。

公开(公告)号：WO99028961A1

公开(公告)日：1999-06-10

申请号：PCT/JP1998/005217

申请日：1998-11-19

IPC: C23C16/50 ,  B05D3/02 ,  B05D7/24 ,  G01Q30/08 ,  G01Q80/00 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/314 ,  H01L21/768

CPC classification number: H01L21/0212 ,  B05D1/62 ,  B05D3/0254 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/3127

Abstract: A process for producing insulating films while obviating the problem accompanying the use of a fluorocarbon film as an interlaminar insulating film for semiconductor devices such that the film is heated to, e.g., around 400 to 450 DEG C upon formation of a tungsten wiring and the heated film not only releases fluorine gas to cause wiring corrosion but also poses various troubles due to the resultant decrease in film thickness. The process comprises converting a fluorocarbon gas and a hydrocarbon gas as the film-forming gas into a plasma to deposit a fluorocarbon film on a semiconductor wafer by means of the resultant active species and subsequently annealing the coated wafer, before wiring formation, in N2, H2, or F2 gas as a treatment gas flowing at a rate of 50 sccm to 1 slm and a pressure of 0.1 Pa to 1 MPa (0.1 Pa to 100 kPa for H2 gas), e.g., at 425 DEG C for 10 minutes to 2 hours to cause the fluorocarbon film to release F, CF, CF2, CF3, etc. and to cause the resultant free bonds to link to each other to thereby improve thermal stability.

Abstract translation: 一种制造绝缘膜的方法，同时避免了使用氟碳膜作为半导体器件的层间绝缘膜的问题，使得在形成钨布线时将膜加热至例如约400至450℃，并加热 膜不仅释放氟气以引起布线腐蚀，而且由于膜厚度的降低而引起各种麻烦。 该方法包括将作为成膜气体的碳氟化合物气体和烃气体转化为等离子体，借助于所得到的活性物质在半导体晶片上沉积碳氟化合物膜，随后在N 2形成布线之前对涂覆的晶片进行退火， H2或F2气体，作为以50sccm至1slm的流量流动的处理气体和0.1Pa至1MPa的压力（对于H 2气体为0.1Pa至100kPa），例如在425℃下10分钟至2 小时，使氟碳膜释放F，CF，CF2，CF3等，并使所得的游离键彼此连接，从而提高热稳定性。

公开(公告)号：WO1994024610A1

公开(公告)日：1994-10-27

申请号：PCT/US1994004012

申请日：1994-04-12

Applicant: ASTARIX, INC.

Inventor： ASTARIX, INC. ,  KELLAM, Mark, D. ,  KEDEM, Gershon

IPC: G03F07/20

CPC classification number: G03F7/70283 ,  G03F7/2022 ,  G03F7/70466 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76816

Abstract: A photoresist (18) is exposed through a design-independent high resolution reticle (20), producing a high resolution image of exposed resist (18A). Photoresist (18) is exposed for the second time through a design-specific low-resolution reticle (24), exposing selected portions (18D) of previously unexposed resist. The remaining portions (18B) of previously unexposed resist form a design-dependent high resolution image. After development of photoresist (18), its unexposed portions (18B) are removed, producing openings (26) in photoresist (18), that can be transferred to underlying material (36), for example by etching openings in that underlying material (36), thereby transfering the design-dependent high resolution to it. Since the design-independent high resolution reticle (20) can be prefabricated ahead of time and used to produce many designs with different functions, the above double-exposure method is suitable for fabricating design-specific high resolution features, e.g., contacts (vias) between conducting layers, within time and at the approximate cost required to fabricate and process a low resolution image. Several variants of the basic method are possible.

Abstract translation: 光致抗蚀剂（18）通过独立于设计的高分辨率掩模（20）曝光，产生曝光抗蚀剂（18A）的高分辨率图像。 光刻胶（18）第二次通过特定于设计的低分辨率掩模（24）曝光，暴露先前未曝光的抗蚀剂的选定部分（18D）。 先前未曝光的光刻胶的剩余部分（18B）形成依赖于设计的高分辨率图像。 在光致抗蚀剂（18）的显影之后，其​​未曝光部分（18B）被去除，在光致抗蚀剂（18）中产生可以转移到下面的材料（36）的开口（26），例如通过蚀刻该下层材料 ），从而将设计依赖的高分辨率传输给它。 由于设计独立的高分辨率掩模版（20）可以提前预制并用于生产具有不同功能的许多设计，所以上述双曝光方法适用于制造设计特定的高分辨率特征，例如触点（通孔） 在导电层之间，在时间内并以制造和处理低分辨率图像所需的大致成本。 基本方法的几个变体是可能的。

公开(公告)号：WO2017222800A1

公开(公告)日：2017-12-28

申请号：PCT/US2017/036045

申请日：2017-06-06

Applicant: APPLIED MATERIALS, INC.

Inventor： OW, Yueh Sheng ,  WANG, Rui ,  KOH, Tuck Foong ,  WANG, Xin

IPC: H01L21/324 ,  H01L21/02

CPC classification number: H01L21/565 ,  H01L21/31058 ,  H01L21/56 ,  H01L21/67115 ,  H01L21/67248 ,  H01L23/293 ,  H05B6/645 ,  H05B6/68 ,  H05B6/70 ,  H05B6/705 ,  H05B6/80

Abstract: Methods of curing polyimide to tune the coefficient of thermal expansion are provided herein. In some embodiments, a method of curing a polymer layer on a substrate, includes: (a) applying a variable frequency microwave energy to the substrate to heat the polymer layer and the substrate to a first temperature; and (b) adjusting the variable frequency microwave energy to increase a temperature of the polymer layer and the substrate to a second temperature to cure the polymer layer.

Abstract translation: 本文提供了固化聚酰亚胺以调节热膨胀系数的方法。 在一些实施例中，一种固化衬底上的聚合物层的方法包括：（a）将可变频率微波能量施加到衬底以将聚合物层和衬底加热到​​第一温度; （b）调节变频微波能量以将聚合物层和基底的温度升高到第二温度以固化聚合物层。

公开(公告)号：WO2017082211A1

公开(公告)日：2017-05-18

申请号：PCT/JP2016/082984

申请日：2016-11-07

Applicant: 古河電気工業株式会社

Inventor： 横井　啓時 ,  内山　具朗 ,  岡　祥文

IPC: H01L21/301 ,  B23K26/351 ,  H01L21/304 ,  H01L21/3065

CPC classification number: H01L21/31058 ,  B23K26/351 ,  B23K26/38 ,  H01L21/02076 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/6836 ,  H01L21/78

Abstract: 基材フィルムと、該基材フィルム上に設けられたマスク材層とを有するマスク一体型表面保護フィルムであって、前記マスク材層が、エチレン－酢酸ビニル共重合体樹脂、エチレン－アクリル酸メチル共重合体樹脂またはエチレン－アクリル酸ブチル共重合体樹脂であって、前記マスク材層の厚みが５０μｍ以下であることを特徴とする、マスク一体型表面保護フィルム。

Abstract translation: 和

基材膜，具有设置在基底薄膜上的掩模材料层的掩模集成表面保护膜，所述掩模材料层是乙烯 - 乙酸乙烯酯共聚 聚结树脂，乙烯 - 丙烯酸甲酯共​​聚物树脂或乙烯 - 丙烯酸丁酯共聚物树脂，其中，所述掩模材料层的厚度为50μm以下，掩模集成表面保护膜。

公开(公告)号：WO2017071054A1

公开(公告)日：2017-05-04

申请号：PCT/CN2015/099123

申请日：2015-12-28

Applicant: 深圳市华星光电技术有限公司

Inventor： 龙芬

IPC: H01L21/77 ,  H01L27/12 ,  G02F1/1335

CPC classification number: H01L27/1248 ,  G02F1/136213 ,  H01L21/31058 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1288

Abstract: 一种显示面板（300）及其制造方法，该方法包括：提供基板（30），在其上形成源极（310）、漏极（311）和沟道（33）；沉积第一绝缘层（34），在其上形成间隔设置的多个彩色光阻（35）；由同一道制程形成位于第一绝缘层（34）上的栅极（36）和位于彩色光阻（35）上的公共电极（37）；并使源极（310）、漏极（311）、沟道（33）和栅极（36）均位于两相邻彩色光阻（35）之间；在栅极（36）和公共电极（37）上形成第二绝缘层（38），第二绝缘层（38）具有一连通源极（310）的通孔（381）；在第二绝缘层（38）上形成通过通孔（381）与源极（310）接触的像素电极（39），像素电极（39）与公共电极（37）形成存储电容。